JP6827289B2 - ウエーハの加工方法及び研磨装置 - Google Patents

ウエーハの加工方法及び研磨装置 Download PDF

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Publication number
JP6827289B2
JP6827289B2 JP2016195906A JP2016195906A JP6827289B2 JP 6827289 B2 JP6827289 B2 JP 6827289B2 JP 2016195906 A JP2016195906 A JP 2016195906A JP 2016195906 A JP2016195906 A JP 2016195906A JP 6827289 B2 JP6827289 B2 JP 6827289B2
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Japan
Prior art keywords
wafer
polishing
liquid
polishing pad
back surface
Prior art date
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Active
Application number
JP2016195906A
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English (en)
Japanese (ja)
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JP2018060872A (ja
Inventor
有佑 宮城
有佑 宮城
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Priority to JP2016195906A priority Critical patent/JP6827289B2/ja
Priority to TW106130122A priority patent/TWI727089B/zh
Priority to CN201710866117.1A priority patent/CN107891358B/zh
Priority to KR1020170124277A priority patent/KR102320761B1/ko
Publication of JP2018060872A publication Critical patent/JP2018060872A/ja
Application granted granted Critical
Publication of JP6827289B2 publication Critical patent/JP6827289B2/ja
Active legal-status Critical Current
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B24B37/345—Feeding, loading or unloading work specially adapted to lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02016—Backside treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
JP2016195906A 2016-10-03 2016-10-03 ウエーハの加工方法及び研磨装置 Active JP6827289B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016195906A JP6827289B2 (ja) 2016-10-03 2016-10-03 ウエーハの加工方法及び研磨装置
TW106130122A TWI727089B (zh) 2016-10-03 2017-09-04 晶圓的加工方法及研磨裝置
CN201710866117.1A CN107891358B (zh) 2016-10-03 2017-09-22 晶片的加工方法和研磨装置
KR1020170124277A KR102320761B1 (ko) 2016-10-03 2017-09-26 웨이퍼의 가공 방법 및 연마 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016195906A JP6827289B2 (ja) 2016-10-03 2016-10-03 ウエーハの加工方法及び研磨装置

Publications (2)

Publication Number Publication Date
JP2018060872A JP2018060872A (ja) 2018-04-12
JP6827289B2 true JP6827289B2 (ja) 2021-02-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016195906A Active JP6827289B2 (ja) 2016-10-03 2016-10-03 ウエーハの加工方法及び研磨装置

Country Status (4)

Country Link
JP (1) JP6827289B2 (zh)
KR (1) KR102320761B1 (zh)
CN (1) CN107891358B (zh)
TW (1) TWI727089B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110576386B (zh) * 2018-06-26 2021-10-12 蓝思精密(东莞)有限公司 指纹环的加工方法
WO2020054504A1 (ja) * 2018-09-13 2020-03-19 東京エレクトロン株式会社 処理システム及び処理方法
EP3900876B1 (de) * 2020-04-23 2024-05-01 Siltronic AG Verfahren zum schleifen einer halbleiterscheibe

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5997392A (en) * 1997-07-22 1999-12-07 International Business Machines Corporation Slurry injection technique for chemical-mechanical polishing
JPH1190816A (ja) * 1997-09-22 1999-04-06 Toshiba Corp 研磨装置及び研磨方法
US6346032B1 (en) * 1999-09-30 2002-02-12 Vlsi Technology, Inc. Fluid dispensing fixed abrasive polishing pad
JP2002141313A (ja) * 2000-08-22 2002-05-17 Nikon Corp Ｃｍｐ装置及び半導体デバイスの製造方法
KR100681683B1 (ko) * 2001-03-16 2007-02-09 동부일렉트로닉스 주식회사 가공물의 표면 연마장치
JP2002273651A (ja) * 2001-03-19 2002-09-25 Fujitsu Ltd 研磨方法及び研磨装置
JP2004253775A (ja) * 2003-01-31 2004-09-09 Nec Electronics Corp 化学機械的研磨方法
JP4790322B2 (ja) * 2005-06-10 2011-10-12 株式会社ディスコ 加工装置および加工方法
CN102001035A (zh) * 2009-08-28 2011-04-06 中芯国际集成电路制造(上海)有限公司 化学机械抛光系统
CN102528653B (zh) * 2010-12-30 2014-11-05 中芯国际集成电路制造(上海)有限公司 固定式颗粒研磨装置及其研磨方法
JP5963537B2 (ja) * 2012-05-23 2016-08-03 株式会社ディスコ シリコンウエーハの加工方法
JP6208498B2 (ja) * 2013-08-29 2017-10-04 株式会社ディスコ 研磨パッドおよびウエーハの加工方法
JP2015202545A (ja) * 2014-04-16 2015-11-16 株式会社ディスコ 研削装置

Also Published As

Publication number Publication date
JP2018060872A (ja) 2018-04-12
KR102320761B1 (ko) 2021-11-01
CN107891358A (zh) 2018-04-10
KR20180037113A (ko) 2018-04-11
TW201814784A (zh) 2018-04-16
TWI727089B (zh) 2021-05-11
CN107891358B (zh) 2021-06-18

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