JP6822657B2 - 抵抗変化型記憶素子のデータ書き込み装置 - Google Patents

抵抗変化型記憶素子のデータ書き込み装置 Download PDF

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Publication number
JP6822657B2
JP6822657B2 JP2016231457A JP2016231457A JP6822657B2 JP 6822657 B2 JP6822657 B2 JP 6822657B2 JP 2016231457 A JP2016231457 A JP 2016231457A JP 2016231457 A JP2016231457 A JP 2016231457A JP 6822657 B2 JP6822657 B2 JP 6822657B2
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Japan
Prior art keywords
resistance change
writing
storage element
change type
type storage
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Japanese (ja)
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JP2018088300A (ja
JP2018088300A5 (https=
Inventor
貴弘 羽生
貴弘 羽生
鈴木　大輔
大輔 鈴木
大野　英男
英男 大野
哲郎 遠藤
哲郎 遠藤
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Tohoku University NUC
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Tohoku University NUC
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Priority to JP2016231457A priority Critical patent/JP6822657B2/ja
Priority to US16/463,938 priority patent/US10896729B2/en
Priority to PCT/JP2017/039354 priority patent/WO2018100954A1/ja
Publication of JP2018088300A publication Critical patent/JP2018088300A/ja
Publication of JP2018088300A5 publication Critical patent/JP2018088300A5/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0078—Write using current through the cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
JP2016231457A 2016-11-29 2016-11-29 抵抗変化型記憶素子のデータ書き込み装置 Active JP6822657B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2016231457A JP6822657B2 (ja) 2016-11-29 2016-11-29 抵抗変化型記憶素子のデータ書き込み装置
US16/463,938 US10896729B2 (en) 2016-11-29 2017-10-31 Data write circuit of resistive memory element
PCT/JP2017/039354 WO2018100954A1 (ja) 2016-11-29 2017-10-31 抵抗変化型記憶素子のデータ書き込み装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016231457A JP6822657B2 (ja) 2016-11-29 2016-11-29 抵抗変化型記憶素子のデータ書き込み装置

Publications (3)

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JP2018088300A JP2018088300A (ja) 2018-06-07
JP2018088300A5 JP2018088300A5 (https=) 2020-01-16
JP6822657B2 true JP6822657B2 (ja) 2021-01-27

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JP2016231457A Active JP6822657B2 (ja) 2016-11-29 2016-11-29 抵抗変化型記憶素子のデータ書き込み装置

Country Status (3)

Country Link
US (1) US10896729B2 (https=)
JP (1) JP6822657B2 (https=)
WO (1) WO2018100954A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9583187B2 (en) * 2015-03-28 2017-02-28 Intel Corporation Multistage set procedure for phase change memory
US10276794B1 (en) 2017-10-31 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Memory device and fabrication method thereof
KR102641097B1 (ko) * 2018-12-31 2024-02-27 삼성전자주식회사 저항성 메모리 장치 및 저항성 메모리 장치의 프로그램 방법
JP7000370B2 (ja) * 2019-03-13 2022-01-19 株式会社東芝 磁気記憶装置
JP7185748B1 (ja) * 2021-12-07 2022-12-07 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011192345A (ja) * 2010-03-15 2011-09-29 Fujitsu Ltd スピン注入型ｍｒａｍ、並びにその書き込み方法及び読み出し方法
JP2012203944A (ja) * 2011-03-24 2012-10-22 Toshiba Corp 抵抗変化型メモリ
JP5267626B2 (ja) * 2011-08-24 2013-08-21 凸版印刷株式会社 不揮発性メモリセルおよび不揮発性メモリ
US8995180B2 (en) * 2012-11-29 2015-03-31 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetoresistive random access memory (MRAM) differential bit cell and method of use
US9928906B2 (en) * 2014-03-24 2018-03-27 Tohoku University Data-write device for resistance-change memory element

Also Published As

Publication number Publication date
WO2018100954A1 (ja) 2018-06-07
US20200082884A1 (en) 2020-03-12
JP2018088300A (ja) 2018-06-07
US10896729B2 (en) 2021-01-19

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