JP6791969B2 - ボンディング装置用の加熱冷却装置の製造方法 - Google Patents
ボンディング装置用の加熱冷却装置の製造方法 Download PDFInfo
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- 238000010438 heat treatment Methods 0.000 title claims description 108
- 238000001816 cooling Methods 0.000 title claims description 104
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 229910000679 solder Inorganic materials 0.000 claims description 46
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 23
- 238000003466 welding Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 229910052786 argon Inorganic materials 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 238000003801 milling Methods 0.000 claims description 4
- 239000003507 refrigerant Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 230000027455 binding Effects 0.000 claims description 2
- 238000009739 binding Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 12
- 239000000463 material Substances 0.000 description 6
- 238000005219 brazing Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K9/00—Arc welding or cutting
- B23K9/16—Arc welding or cutting making use of shielding gas
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K9/00—Arc welding or cutting
- B23K9/007—Spot arc welding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/008—Soldering within a furnace
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3033—Ni as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
- B23P15/00—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Arc Welding In General (AREA)
- Die Bonding (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Wire Bonding (AREA)
Description
本発明は、微小電気機械システム(MEMS)製造の分野に係るボンディング装置に関し、特に、ボンディング装置の加熱冷却装置の製造方法に関する。
ウェハボンディングは、異なる材料のウェハを接合する技術であり、半導体装置の3次元加工にとって重要なものである。ウェハボンディング工程は主に、ウェハ表面処理(洗浄、活性化)、位置合わせおよびボンディングを含む。これらの工程の後に、個々のウェハを位置合わせし、接合して、3次元構造を形成する。ボンディングは、微小電気機械システム(MEMS)技術におけるパッケージングに用いられるだけでなく、3次元装置製造の一部を構成するものでもある。それは、製造における初期作業および最終作業の両方に関与している。ボンディング装置は、加熱されることができる2つの平板の間に配置される材料を接合するための装置である。これらの材料は、加えられる圧力、温度または電圧のような外部条件下で発生するファン・デル・ワールズ力、分子間力あるいは原子間力によって互いに接合される。したがって、接合される材料に対して2つの平板が与えることができる圧力および温度は、ボンディング装置の性能を評価するための重要な測定基準とみなされる。
本発明の目的は、表面平坦度が良好であるとともに、より早い加熱および冷却を可能にするボンディング装置の加熱冷却装置の製造方法として、溶接のつなぎ目での完全なガス抜きを可能にするような、加熱冷却装置の製造方法を提供することにある。
1)加熱線板および冷却管板における溝にそれぞれ加熱線および冷却管を配置し、溶接することによって固定する工程と、
2)加熱線板の表面と冷却管板の表面との間に真空ろう付けはんだを配置して、その端部に開口が残されたままで端部において表面を溶接する工程と、
3)真空チャンバにおいて真空ろう付けはんだを加熱溶融し、同時に、加熱線と冷却管との間で真空ろう付けはんだが均一に分布されることを可能とするように押圧を加え、かつ、溶接された表面の間に存在する空気を完全に除去するように真空チャンバを排気して、続いて溶接によって開口を閉じる工程と、
4)加熱冷却装置の上面および下面を仕上げる工程とを含む。
Claims (13)
- ボンディング装置の加熱冷却装置の製造方法であって、
加熱線板と冷却管板と加熱線と冷却管とはんだ層とを有し、前記加熱線および前記冷却管が前記加熱線板および前記冷却管板の各々の溝において溶接され、且つ、前記はんだ層により均一に溶接され、前記加熱線が外部加熱装置に接続するように構成され、前記冷却管が外部冷却装置に接続するように構成された前記加熱冷却装置の製造方法であり、
1)前記加熱線板および前記冷却管板における溝に前記加熱線および前記冷却管をそれぞれ配置し、溶接することによって固定する工程と、
2)前記加熱線板の表面と前記冷却管板の表面との間に真空ろう付けはんだを配置して、その端部に開口が残されたままで前記端部において前記表面を溶接する工程と、
3)真空チャンバにおいて前記真空ろう付けはんだを加熱溶融し、同時に、前記加熱線と前記冷却管との間で前記真空ろう付けはんだが均一に分布されることを可能とするように押圧を加え、かつ、溶接された前記表面の間に存在する空気を完全に除去するように前記真空チャンバを排気して、続いて溶接によって前記開口を閉じる工程と、
4)前記加熱冷却装置の上面および下面を仕上げる工程とを有する、ボンディング装置の加熱冷却装置の製造方法。 - 前記工程1)において、前記加熱線は、スポットアルゴンアーク溶接によって前記加熱線板における前記溝に固定され、前記冷却管は、スポットアルゴンアーク溶接によって前記冷却管板における前記溝に固定される請求項1に記載の方法。
- 前記工程2)において、前記表面は、その端部において共にアルゴンアーク溶接される請求項1に記載の方法。
- 前記工程2)において、2つの開口が残されている請求項1に記載の方法。
- 前記工程3)において、1000〜1040℃の温度で前記加熱を行う請求項1に記載の方法。
- 前記工程3)において、前記加熱を0.5時間行う請求項1に記載の方法。
- 前記工程3)において、前記加熱線と前記冷却管との間で前記真空ろう付けはんだが均一に分布されることを可能にするために前記圧力を加えている間に、前記真空ろう付けはんだの余剰分は、前記開口から排出される請求項1に記載の方法。
- 前記工程4)において、前記加熱冷却装置の前記上面および前記下面をフライス加工によって仕上げる請求項1に記載の方法。
- 前記真空ろう付けはんだは、ニッケル系はんだである請求項1に記載の方法。
- 前記外部加熱装置は、電気ヒータである請求項1に記載の方法。
- 前記外部冷却装置は、冷媒としての冷却物質で満たされている請求項1に記載の方法。
- 前記加熱線および前記冷却管のうちの1つまたはそれぞれは、均一な螺旋である請求項1に記載の方法。
- ボンディング装置の前記加熱冷却装置の厚さが22mm〜25mmである請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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CN201511025791.4 | 2015-12-30 | ||
CN201511025791.4A CN106925867B (zh) | 2015-12-30 | 2015-12-30 | 一种键合机加热冷却装置及其制作方法 |
PCT/CN2016/111778 WO2017114315A1 (zh) | 2015-12-30 | 2016-12-23 | 一种键合机加热冷却装置及其制作方法 |
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JP2019507494A JP2019507494A (ja) | 2019-03-14 |
JP6791969B2 true JP6791969B2 (ja) | 2020-11-25 |
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US (1) | US20190022788A1 (ja) |
JP (1) | JP6791969B2 (ja) |
KR (1) | KR20180095664A (ja) |
CN (1) | CN106925867B (ja) |
SG (1) | SG11201805327PA (ja) |
TW (1) | TWI614079B (ja) |
WO (1) | WO2017114315A1 (ja) |
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CN111613544B (zh) * | 2020-06-04 | 2023-03-10 | 山东晶升电子科技有限公司 | 真空晶圆键合机 |
CN114131245B (zh) * | 2021-09-24 | 2024-08-16 | 浙江久立特材科技股份有限公司湖州复合管分公司 | 钢管堆焊冷却装置 |
CN115394689B (zh) * | 2022-09-05 | 2023-09-01 | 江苏富乐华功率半导体研究院有限公司 | 一种功率半导体器件热压烧结装置 |
CN117995698B (zh) * | 2024-01-18 | 2024-07-09 | 芯笙半导体科技(上海)有限公司 | 一种真空用热压板及半导体产品真空热压装置 |
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JP4133958B2 (ja) * | 2004-08-04 | 2008-08-13 | 日本発条株式会社 | ワークを加熱または冷却するための装置と、その製造方法 |
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2016
- 2016-12-23 US US16/067,254 patent/US20190022788A1/en not_active Abandoned
- 2016-12-23 KR KR1020187020545A patent/KR20180095664A/ko not_active Application Discontinuation
- 2016-12-23 JP JP2018534560A patent/JP6791969B2/ja active Active
- 2016-12-23 WO PCT/CN2016/111778 patent/WO2017114315A1/zh active Application Filing
- 2016-12-23 SG SG11201805327PA patent/SG11201805327PA/en unknown
- 2016-12-27 TW TW105143410A patent/TWI614079B/zh active
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Publication number | Publication date |
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KR20180095664A (ko) | 2018-08-27 |
SG11201805327PA (en) | 2018-07-30 |
TWI614079B (zh) | 2018-02-11 |
TW201722596A (zh) | 2017-07-01 |
WO2017114315A1 (zh) | 2017-07-06 |
JP2019507494A (ja) | 2019-03-14 |
CN106925867A (zh) | 2017-07-07 |
CN106925867B (zh) | 2019-09-17 |
US20190022788A1 (en) | 2019-01-24 |
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