JP6786956B2 - 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体装置および炭化珪素半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 226
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 153
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 152
- 238000000034 method Methods 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 claims description 44
- 230000002093 peripheral effect Effects 0.000 claims description 25
- 238000002161 passivation Methods 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 36
- 239000002184 metal Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 230000006378 damage Effects 0.000 description 11
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- 239000012535 impurity Substances 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 230000005684 electric field Effects 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
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- 239000010936 titanium Substances 0.000 description 3
- 229910018575 Al—Ti Inorganic materials 0.000 description 2
- 229910003310 Ni-Al Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
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- 230000008569 process Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018507 Al—Ni Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
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Description
本発明にかかる半導体装置は、ワイドバンドギャップ半導体を用いて構成される。実施の形態1においては、ワイドバンドギャップ半導体として例えばSiCを用いて作製された炭化珪素半導体装置について、JBS構造のSBDを例に説明する。図1は、実施の形態1にかかる炭化珪素半導体装置の構造を示す図6のA−A’断面図である。
次に、実施の形態1にかかる炭化珪素半導体装置の製造方法について説明する。ここでは、図1および図6の炭化珪素半導体装置の製造方法を説明する。図8〜図14は、実施の形態にかかる炭化珪素半導体装置の製造途中の状態を示す断面図である。まず、n型炭化珪素基板1を用意する。次に、n型炭化珪素基板1のおもて面に、n-型ドリフト層2をエピタキシャル成長させる。
次に、実施の形態2にかかる炭化珪素半導体装置の構造について説明する。図16は、実施の形態2にかかる炭化珪素半導体装置の構造を示す図18のA−A’断面図である。図16の実施の形態2にかかる半導体装置の断面が、図1の実施の形態1にかかる半導体装置の断面と異なるところは、p型領域4とp+型ガードリング領域5との間に、複数のp型ウェル領域3が設けられていることである。これは、実施の形態2のp型領域4がチップ中心に設けられているためである。
2 n-型ドリフト層
3 p型ウェル領域
4 p型領域
5 p+型ガードリング領域
6 JTE領域(耐圧構造部)
7 層間絶縁膜
8 オーミック電極
9 ショットキー電極
10 上部電極
11 パッシベーション膜
12 下部電極
13 フィールド酸化膜
14 コンタクトメタル
15 Alワイヤー
16 ボンディングパッド
17 Alワイヤー接触部
18 破壊痕
20 活性領域
30 エッジ終端領域
40 炭化珪素基体
Claims (12)
- 第1導電型の炭化珪素半導体基板のおもて面に設けられた第1導電型の第1半導体層と、
前記第1半導体層の表面に選択的に設けられた第2導電型の第1半導体領域と、
前記第1半導体層の表面に選択的に設けられた、前記第1半導体領域と接続する第2導電型の第2半導体領域と、
前記第1半導体層および前記第1半導体領域とショットキー接触する第1電極と、
前記第2半導体領域とオーミック接触する第2電極と、
を備え、
前記第2電極の密度は、前記炭化珪素半導体基板の中心部が低く外周側ほど高くなることを特徴とする炭化珪素半導体装置。 - 前記炭化珪素半導体基板に設けられた、主電流が流れる活性領域と、
前記活性領域の周囲を囲む終端領域と、
を備え、
前記活性領域は、中心部と中心部を取り囲む外周部とからなり、
前記第2半導体領域は、前記活性領域内の外周部に設けられ、
前記第2電極が、前記第2半導体領域の表面に設けられることを特徴とする請求項1に記載の炭化珪素半導体装置。 - 前記第2電極は、全面ベタ構造、ドット構造またはストライプ構造であることを特徴とする請求項2に記載の炭化珪素半導体装置。
- 素子耐圧が1700V以上であることを特徴とする請求項1〜3のいずれか一つに記載の炭化珪素半導体装置。
- 第1導電型の炭化珪素半導体基板のおもて面に第1導電型の第1半導体層を形成する第1工程と、
前記第1半導体層の表面に第2導電型の第1半導体領域を選択的に形成する第2工程と、
前記第1半導体層の表面に、前記第1半導体領域と接続する第2導電型の第2半導体領域を選択的に形成する第3工程と、
前記第1半導体層および前記第1半導体領域とショットキー接触する第1電極を形成する第4工程と、
前記第2半導体領域とオーミック接触する第2電極を形成する第5工程と、
を含み、
前記第5工程は、前記第2電極の密度を、前記炭化珪素半導体基板の中心部が低く外周側ほど高く形成することを特徴とする炭化珪素半導体装置の製造方法。 - 第1導電型の炭化珪素半導体基板のおもて面に設けられた第1導電型の第1半導体層と、
前記第1半導体層の表面に選択的に設けられた第2導電型の第1半導体領域と、
前記第1半導体層の表面に選択的に設けられた、前記第1半導体領域と接続する第2導電型の第2半導体領域と、
前記第1半導体層および前記第1半導体領域とショットキー接触する第1電極と、
前記第2半導体領域とオーミック接触する第2電極と、
を備え、
前記第2電極の密度は、前記炭化珪素半導体基板の中心部が高く外周側ほど低くなり、
前記第1半導体領域と前記第2半導体領域の外側には、前記炭化珪素半導体基板に設けられた、主電流が流れる活性領域を取り囲む環状の第2導電型のガードリング領域が配置され、
前記第2半導体領域と前記ガードリング領域との間に、複数の前記第1半導体領域が設けられていることを特徴とする炭化珪素半導体装置。 - 前記活性領域と、
前記活性領域の周囲を囲む終端領域と、
を備え、
前記活性領域は、中心部と中心部を取り囲む外周部とからなり、
前記第2半導体領域は、前記活性領域内の中心部に設けられ、
前記第2電極が、前記第2半導体領域の表面に設けられることを特徴とする請求項6に記載の炭化珪素半導体装置。 - 前記第2電極は、全面ベタ構造、ドット構造またはストライプ構造であることを特徴とする請求項7に記載の炭化珪素半導体装置。
- 前記第2電極は、外部と電気的に接続するワイヤーが接続される電極であることを特徴とする請求項7または8に記載の炭化珪素半導体装置。
- 前記第2電極を覆うパッシベーション膜を備え、
前記ワイヤーは、前記パッシベーション膜の開口部に接続されることを特徴とする請求項9に記載の炭化珪素半導体装置。 - 素子耐圧が1200V以下であることを特徴とする請求項7〜10のいずれか一つに記載の炭化珪素半導体装置。
- 第1導電型の炭化珪素半導体基板のおもて面に第1導電型の第1半導体層を形成する第1工程と、
前記第1半導体層の表面に第2導電型の第1半導体領域を選択的に形成する第2工程と、
前記第1半導体層の表面に、前記第1半導体領域と接続する第2導電型の第2半導体領域を選択的に形成する第3工程と、
前記第1半導体層および前記第1半導体領域とショットキー接触する第1電極を形成する第4工程と、
前記第2半導体領域とオーミック接触する第2電極を形成する第5工程と、
前記第1半導体領域と前記第2半導体領域の外側の前記炭化珪素半導体基板に、主電流が流れる活性領域を取り囲む環状の第2導電型のガードリング領域を形成する第6工程と、
を含み、
前記第5工程では、前記第2電極の密度を、前記炭化珪素半導体基板の中心部が高く外周側ほど低く形成し、
前記第2工程では、前記第2半導体領域と前記ガードリング領域との間に、複数の前記第1半導体領域が設けられるように前記第1半導体領域を形成することを特徴とする炭化珪素半導体装置の製造方法。
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JP6832156B2 (ja) * | 2016-12-28 | 2021-02-24 | 新電元工業株式会社 | 半導体装置 |
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CN110581180A (zh) * | 2019-09-12 | 2019-12-17 | 瑞能半导体科技股份有限公司 | 半导体器件及其制造方法 |
JP7371507B2 (ja) * | 2020-01-22 | 2023-10-31 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
US11437525B2 (en) | 2020-07-01 | 2022-09-06 | Hunan Sanan Semiconductor Co., Ltd. | Silicon carbide power diode device and fabrication method thereof |
CN112038393B (zh) * | 2020-07-01 | 2023-05-05 | 湖南三安半导体有限责任公司 | 一种碳化硅功率二极管器件及其制备方法 |
JP2023532305A (ja) | 2020-07-01 | 2023-07-27 | シアメン サンアン インテグレイテッド サーキット カンパニー リミテッド | 炭化ケイ素パワーダイオード装置およびその製造方法 |
US11600724B2 (en) * | 2020-09-24 | 2023-03-07 | Wolfspeed, Inc. | Edge termination structures for semiconductor devices |
US20230042074A1 (en) * | 2021-08-06 | 2023-02-09 | Taiwan Semiconductor Manufacturing Company | Silicon fragment defect reduction in grinding process |
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