JP2015057843A - 電力用半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000012535 impurity Substances 0.000 claims abstract description 20
- 238000009826 distribution Methods 0.000 claims description 7
- 239000010410 layer Substances 0.000 abstract description 23
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 239000002344 surface layer Substances 0.000 abstract description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 21
- 229910010271 silicon carbide Inorganic materials 0.000 description 20
- 230000000694 effects Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000013021 overheating Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
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Abstract
Description
以下、本発明の実施例を図面に基づいて説明する。図1は本発明の実施の形態1に係る電力用半導体装置であるショットキーダイオードを示す断面図である。第1の実施の形態に係るショットキーダイオード100では、炭化珪素(SiC)のN−型のエピタキシャル層1(第一導電型の半導体領域、ドリフト層)の下にN+型のSiC基板2(カソード領域)が設けられている。SiC基板2は、第1主面2aの面方位が、<0001>シリコン面から4°または8°オフした、4Hのポリタイプを有する低抵抗炭化珪素基板である。エピタキシャル層1の不純物濃度は、SiC基板2の不純物濃度よりも低い。SiC基板2の第2主面2bにはシリサイドからなるカソード電極3(ドレイン電極)が形成され、電気的に接続できるようになっている。ここで、エピタキシャル層1の不純物濃度は、2×1014個/cm3以上、2×1016個/cm3以下などであればよい。
実施の形態2は、実施の形態1で示したショットキーダイオード構造の変形である。実施の形態2によれば、図7に示されるように2つの領域でp型の半導体層が形成されている。p領域8、p+領域9が形成される位置は、ショットキーダイオードが実際の電力変換機に用いる場合にワイアボンドなどにより接続されるアノード電極5のフロント面の直下になるように設計されている。
実施の形態3を図9に基づいて説明する。実施の形態3は実施の形態1で示したショットキーダイオード構造の変形例を示している。基本的なサージ電流耐量の改善と通常動作時の低抵抗化の両立を実現する発明である。本実施の形態によれば、p領域8はダイオードのフロント面全面に渡って形成されている。
Claims (11)
- 第一導電型のSiC基板と、
前記SiC基板の第一主面に形成され、前記SiC基板よりも不純物濃度の低い第一導電型でSiCのドリフト層と、
前記ドリフト層の内部に形成された第二導電型の半導体領域と、
前記ドリフト層の表面に形成され、第一導電型の前記ドリフト層とショットキー接続し、前記半導体領域とオーミック接続するショットキー電極と、
前記ショットキー電極の表面に形成されたアノード電極と、
前記アノード電極の表面に、前記半導体領域の水平方向の大きさより大きくなるように形成されたファーストボンドと、
前記SiC基板の前記第一主面に対向する第二主面に形成されたカソード電極と、
を備えた電力用半導体装置。 - 前記半導体領域は、深度方向に異なる濃度分布を有すること
を特徴とする請求項1に記載の電力用半導体装置。 - 前記半導体領域の幅は、3μm以上10μm以下であること
を特徴とする請求項1又2に記載の電力用半導体装置。 - 前記半導体領域は、ドット形状であること
を特徴とする請求項1から3のいずれか1項に記載の電力用半導体装置。 - 前記半導体領域は、ストライプ形状であること
を特徴とする請求項1から3のいずれか1項に記載の電力用半導体装置。 - 複数の前記半導体領域を備え、
前記ファーストボンドは、上面から見て前記半導体領域の密度の高い部分に対応して形成されること
を特徴とする請求項1から5のいずれか1項に記載の電力用半導体装置。 - 前記ファーストボンドを介して前記アノード電極と接続されるワイアボンドを備えたこと
を特徴とする請求項1から6のいずれか1項に記載の電力用半導体装置。 - 前記ファーストボンドを介して前記アノード電極と接続されるリボンボンドを備えたこと
を特徴とする請求項1から6のいずれか1項に記載の電力用半導体装置。 - 前記ワイアボンドはCuであること
を特徴とする請求項7に記載の電力用半導体装置。 - 前記リボンボンドはCuであること
を特徴とする請求項8に記載の電力用半導体装置。 - SiCスイッチング素子をさらに備えたこと
を特徴とする請求項1から10のいずれか1項に記載の電力用半導体装置。
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JP2014224326A JP2015057843A (ja) | 2014-11-04 | 2014-11-04 | 電力用半導体装置 |
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JP2014224326A JP2015057843A (ja) | 2014-11-04 | 2014-11-04 | 電力用半導体装置 |
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JP2011011107A Division JP5644536B2 (ja) | 2011-01-21 | 2011-01-21 | 電力用半導体装置 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018032794A (ja) * | 2016-08-25 | 2018-03-01 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
CN109192789A (zh) * | 2018-08-29 | 2019-01-11 | 无锡新洁能股份有限公司 | 高浪涌电流能力碳化硅二极管及其制作方法 |
EP4343848A1 (en) * | 2022-09-20 | 2024-03-27 | Kabushiki Kaisha Toshiba | Semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000261004A (ja) * | 1999-03-11 | 2000-09-22 | Toshiba Corp | 半導体装置 |
JP2002314099A (ja) * | 2001-04-09 | 2002-10-25 | Denso Corp | ショットキーダイオード及びその製造方法 |
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- 2014-11-04 JP JP2014224326A patent/JP2015057843A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000261004A (ja) * | 1999-03-11 | 2000-09-22 | Toshiba Corp | 半導体装置 |
JP2002314099A (ja) * | 2001-04-09 | 2002-10-25 | Denso Corp | ショットキーダイオード及びその製造方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018032794A (ja) * | 2016-08-25 | 2018-03-01 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
CN109192789A (zh) * | 2018-08-29 | 2019-01-11 | 无锡新洁能股份有限公司 | 高浪涌电流能力碳化硅二极管及其制作方法 |
CN109192789B (zh) * | 2018-08-29 | 2023-07-14 | 无锡新洁能股份有限公司 | 高浪涌电流能力碳化硅二极管及其制作方法 |
EP4343848A1 (en) * | 2022-09-20 | 2024-03-27 | Kabushiki Kaisha Toshiba | Semiconductor device |
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