JP6783248B2 - 基板ハンドリング及び加熱システム - Google Patents

基板ハンドリング及び加熱システム Download PDF

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Publication number
JP6783248B2
JP6783248B2 JP2017557422A JP2017557422A JP6783248B2 JP 6783248 B2 JP6783248 B2 JP 6783248B2 JP 2017557422 A JP2017557422 A JP 2017557422A JP 2017557422 A JP2017557422 A JP 2017557422A JP 6783248 B2 JP6783248 B2 JP 6783248B2
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Prior art keywords
substrate
led array
alignment station
leds
heating system
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Japanese (ja)
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JP2018522396A (ja
JP2018522396A5 (enExample
Inventor
ディー エヴァンス モルガン
ディー エヴァンス モルガン
エム シャーラー ジェイソン
エム シャーラー ジェイソン
ジェフリー リッシャー ディー
ジェフリー リッシャー ディー
モラディアン アラ
モラディアン アラ
ティー ウィーバー ウィリアム
ティー ウィーバー ウィリアム
ブレント ヴォパット ロバート
ブレント ヴォパット ロバート
Original Assignee
ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
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Publication of JP2018522396A5 publication Critical patent/JP2018522396A5/ja
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B3/00—Drying solid materials or objects by processes involving the application of heat
    • F26B3/28—Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun
    • F26B3/30—Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun from infrared-emitting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Combustion & Propulsion (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microbiology (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
JP2017557422A 2015-05-08 2016-04-26 基板ハンドリング及び加熱システム Active JP6783248B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/707,027 2015-05-08
US14/707,027 US10443934B2 (en) 2015-05-08 2015-05-08 Substrate handling and heating system
PCT/US2016/029326 WO2016182726A1 (en) 2015-05-08 2016-04-26 Substrate handling and heating system

Publications (3)

Publication Number Publication Date
JP2018522396A JP2018522396A (ja) 2018-08-09
JP2018522396A5 JP2018522396A5 (enExample) 2019-05-16
JP6783248B2 true JP6783248B2 (ja) 2020-11-11

Family

ID=57221957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017557422A Active JP6783248B2 (ja) 2015-05-08 2016-04-26 基板ハンドリング及び加熱システム

Country Status (6)

Country Link
US (1) US10443934B2 (enExample)
JP (1) JP6783248B2 (enExample)
KR (1) KR102445265B1 (enExample)
CN (1) CN107636818B (enExample)
TW (1) TWI705517B (enExample)
WO (1) WO2016182726A1 (enExample)

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US9899242B2 (en) * 2015-04-06 2018-02-20 Varian Semiconductor Equipment Associates, Inc. Device and method for substrate heating during transport
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
KR102405723B1 (ko) 2017-08-18 2022-06-07 어플라이드 머티어리얼스, 인코포레이티드 고압 및 고온 어닐링 챔버
SG11202001450UA (en) 2017-09-12 2020-03-30 Applied Materials Inc Apparatus and methods for manufacturing semiconductor structures using protective barrier layer
JP7112490B2 (ja) 2017-11-11 2022-08-03 マイクロマテリアルズ エルエルシー 高圧処理チャンバのためのガス供給システム
SG11202003438QA (en) 2017-11-16 2020-05-28 Applied Materials Inc High pressure steam anneal processing apparatus
JP2021503714A (ja) 2017-11-17 2021-02-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧処理システムのためのコンデンサシステム
WO2019147405A1 (en) 2018-01-23 2019-08-01 Applied Materials, Inc. Methods and apparatus for wafer temperature measurement
EP3762962A4 (en) 2018-03-09 2021-12-08 Applied Materials, Inc. HIGH PRESSURE ANNEALING PROCESS FOR METAL-BASED MATERIALS
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10600662B2 (en) * 2018-07-20 2020-03-24 Varian Semiconductor Equipment Associates, Inc. Silicon carbide substrate heating
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US11109452B2 (en) 2019-11-14 2021-08-31 Applied Materials, Inc. Modular LED heater
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
CN114719750A (zh) * 2022-03-30 2022-07-08 北京烁科精微电子装备有限公司 一种晶圆切边位置检测装置

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JP3935532B2 (ja) * 1996-08-27 2007-06-27 オリンパス株式会社 ウェハ位置決め装置
WO2001078114A1 (en) * 2000-04-07 2001-10-18 Varian Semiconductor Equipment Associates, Inc. WAFER ORIENTATION SENSOR FOR GaAs WAFERS
US6567257B2 (en) * 2000-04-19 2003-05-20 Applied Materials, Inc. Method and apparatus for conditioning an electrostatic chuck
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Also Published As

Publication number Publication date
KR102445265B1 (ko) 2022-09-20
US10443934B2 (en) 2019-10-15
US20160329458A1 (en) 2016-11-10
JP2018522396A (ja) 2018-08-09
WO2016182726A1 (en) 2016-11-17
TWI705517B (zh) 2020-09-21
KR20180005204A (ko) 2018-01-15
CN107636818B (zh) 2021-09-07
CN107636818A (zh) 2018-01-26
TW201642381A (zh) 2016-12-01

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