TWI705517B - 基板處理與加熱系統 - Google Patents

基板處理與加熱系統 Download PDF

Info

Publication number
TWI705517B
TWI705517B TW105113772A TW105113772A TWI705517B TW I705517 B TWI705517 B TW I705517B TW 105113772 A TW105113772 A TW 105113772A TW 105113772 A TW105113772 A TW 105113772A TW I705517 B TWI705517 B TW I705517B
Authority
TW
Taiwan
Prior art keywords
substrate
light
processing
heating system
substrate processing
Prior art date
Application number
TW105113772A
Other languages
English (en)
Chinese (zh)
Other versions
TW201642381A (zh
Inventor
摩根 Ｄ‧ 艾文斯
傑森 Ｍ‧ 夏勒
Ｄ‧ 傑弗里 里斯查爾
阿拉 莫瑞迪亞
威廉 Ｔ． 維弗
羅伯特 布然特 寶佩特
Original Assignee
美商瓦里安半導體設備公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商瓦里安半導體設備公司 filed Critical 美商瓦里安半導體設備公司
Publication of TW201642381A publication Critical patent/TW201642381A/zh
Application granted granted Critical
Publication of TWI705517B publication Critical patent/TWI705517B/zh

Links

Images

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B3/00—Drying solid materials or objects by processes involving the application of heat
    • F26B3/28—Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun
    • F26B3/30—Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun from infrared-emitting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microbiology (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
TW105113772A 2015-05-08 2016-05-04 基板處理與加熱系統 TWI705517B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/707,027 2015-05-08
US14/707,027 US10443934B2 (en) 2015-05-08 2015-05-08 Substrate handling and heating system

Publications (2)

Publication Number Publication Date
TW201642381A TW201642381A (zh) 2016-12-01
TWI705517B true TWI705517B (zh) 2020-09-21

Family

ID=57221957

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105113772A TWI705517B (zh) 2015-05-08 2016-05-04 基板處理與加熱系統

Country Status (6)

Country Link
US (1) US10443934B2 (enExample)
JP (1) JP6783248B2 (enExample)
KR (1) KR102445265B1 (enExample)
CN (1) CN107636818B (enExample)
TW (1) TWI705517B (enExample)
WO (1) WO2016182726A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201639063A (zh) * 2015-01-22 2016-11-01 應用材料股份有限公司 批量加熱和冷卻腔室或負載鎖定裝置
US9899242B2 (en) * 2015-04-06 2018-02-20 Varian Semiconductor Equipment Associates, Inc. Device and method for substrate heating during transport
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
JP6947914B2 (ja) 2017-08-18 2021-10-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧高温下のアニールチャンバ
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
US11177128B2 (en) 2017-09-12 2021-11-16 Applied Materials, Inc. Apparatus and methods for manufacturing semiconductor structures using protective barrier layer
CN111357090B (zh) 2017-11-11 2024-01-05 微材料有限责任公司 用于高压处理腔室的气体输送系统
JP7330181B2 (ja) 2017-11-16 2023-08-21 アプライド マテリアルズ インコーポレイテッド 高圧蒸気アニール処理装置
KR20200075892A (ko) 2017-11-17 2020-06-26 어플라이드 머티어리얼스, 인코포레이티드 고압 처리 시스템을 위한 컨덴서 시스템
WO2019147405A1 (en) 2018-01-23 2019-08-01 Applied Materials, Inc. Methods and apparatus for wafer temperature measurement
CN111902929B (zh) 2018-03-09 2025-09-19 应用材料公司 用于含金属材料的高压退火处理
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10600662B2 (en) * 2018-07-20 2020-03-24 Varian Semiconductor Equipment Associates, Inc. Silicon carbide substrate heating
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
US10675581B2 (en) 2018-08-06 2020-06-09 Applied Materials, Inc. Gas abatement apparatus
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
US11109452B2 (en) 2019-11-14 2021-08-31 Applied Materials, Inc. Modular LED heater
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
CN114719750A (zh) * 2022-03-30 2022-07-08 北京烁科精微电子装备有限公司 一种晶圆切边位置检测装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6222991B1 (en) * 1995-02-03 2001-04-24 Applied Materials Inc. Method for rotationally aligning and degassing semiconductor substrate within single vacuum chamber
US20100267174A1 (en) * 2009-04-20 2010-10-21 Applied Materials, Inc. LED Substrate Processing
TW201403734A (zh) * 2012-05-30 2014-01-16 Applied Materials Inc 用於快速熱處理的裝置及方法
US20150048261A1 (en) * 2012-03-26 2015-02-19 Heraeus Noblelight Gmbh Apparatus for irradiating a substrate

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2642216B2 (ja) * 1989-05-23 1997-08-20 サイベック システムズ 半導体物品の予備位置決め方法及び装置
JPH05315246A (ja) * 1992-05-07 1993-11-26 Sony Corp 露光装置
JP3935532B2 (ja) * 1996-08-27 2007-06-27 オリンパス株式会社 ウェハ位置決め装置
WO2001078114A1 (en) * 2000-04-07 2001-10-18 Varian Semiconductor Equipment Associates, Inc. WAFER ORIENTATION SENSOR FOR GaAs WAFERS
US6567257B2 (en) * 2000-04-19 2003-05-20 Applied Materials, Inc. Method and apparatus for conditioning an electrostatic chuck
US20030168175A1 (en) 2002-03-08 2003-09-11 Kim Kyung-Tae Substrate alignment apparatus
JP2005032906A (ja) * 2003-07-10 2005-02-03 Nikon Corp ウェハローダ及び露光装置
JP2005032926A (ja) * 2003-07-10 2005-02-03 Nikon Corp ウェハローダ及び露光装置
US20060004493A1 (en) * 2004-06-30 2006-01-05 Jack Hwang Use of active temperature control to provide emmisivity independent wafer temperature
US20070006936A1 (en) 2005-07-07 2007-01-11 Applied Materials, Inc. Load lock chamber with substrate temperature regulation
JP4940635B2 (ja) * 2005-11-14 2012-05-30 東京エレクトロン株式会社 加熱装置、熱処理装置及び記憶媒体
JP5084420B2 (ja) * 2007-09-21 2012-11-28 東京エレクトロン株式会社 ロードロック装置および真空処理システム
JP2009099925A (ja) * 2007-09-27 2009-05-07 Tokyo Electron Ltd アニール装置
JP4616873B2 (ja) * 2007-09-28 2011-01-19 東京エレクトロン株式会社 半導体製造装置、基板保持方法及びプログラム
JP5282393B2 (ja) * 2007-11-06 2013-09-04 ウシオ電機株式会社 光照射式加熱処理装置
US8548311B2 (en) * 2008-04-09 2013-10-01 Applied Materials, Inc. Apparatus and method for improved control of heating and cooling of substrates
JP2009253242A (ja) * 2008-04-11 2009-10-29 Tokyo Electron Ltd アニール装置
JP4601698B2 (ja) 2008-09-26 2010-12-22 株式会社日立国際電気 半導体製造方法及びその装置
US20100301236A1 (en) 2009-05-26 2010-12-02 Shih-Yung Shieh Shorten Temperature Recovery Time of Low Temperature Ion Implantation
JP2011040544A (ja) * 2009-08-10 2011-02-24 Toshiba Corp 熱処理装置及び半導体装置の製造方法
US8328494B2 (en) 2009-12-15 2012-12-11 Varian Semiconductor Equipment Associates, Inc. In vacuum optical wafer heater for cryogenic processing
US20110291022A1 (en) 2010-05-28 2011-12-01 Axcelis Technologies, Inc. Post Implant Wafer Heating Using Light
JP5568495B2 (ja) * 2011-03-15 2014-08-06 東京エレクトロン株式会社 熱処理装置
CN104137249B (zh) * 2012-04-25 2017-11-14 应用材料公司 晶片边缘的测量和控制
US9711324B2 (en) 2012-05-31 2017-07-18 Axcelis Technologies, Inc. Inert atmospheric pressure pre-chill and post-heat
US9318360B2 (en) * 2013-10-11 2016-04-19 Applied Materials, Inc. Linear high packing density for LED arrays

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6222991B1 (en) * 1995-02-03 2001-04-24 Applied Materials Inc. Method for rotationally aligning and degassing semiconductor substrate within single vacuum chamber
US20100267174A1 (en) * 2009-04-20 2010-10-21 Applied Materials, Inc. LED Substrate Processing
US20150048261A1 (en) * 2012-03-26 2015-02-19 Heraeus Noblelight Gmbh Apparatus for irradiating a substrate
TW201403734A (zh) * 2012-05-30 2014-01-16 Applied Materials Inc 用於快速熱處理的裝置及方法

Also Published As

Publication number Publication date
JP2018522396A (ja) 2018-08-09
US20160329458A1 (en) 2016-11-10
KR102445265B1 (ko) 2022-09-20
KR20180005204A (ko) 2018-01-15
WO2016182726A1 (en) 2016-11-17
US10443934B2 (en) 2019-10-15
TW201642381A (zh) 2016-12-01
JP6783248B2 (ja) 2020-11-11
CN107636818B (zh) 2021-09-07
CN107636818A (zh) 2018-01-26

Similar Documents

Publication Publication Date Title
TWI705517B (zh) 基板處理與加熱系統
US9685303B2 (en) Apparatus for heating and processing a substrate
JP7462604B2 (ja) 回転基板レーザアニール
JP7311096B2 (ja) 基板加熱ユニット、基板処理装置および基板処理方法
KR20140063805A (ko) 증착 마스크, 증착 마스크의 제조 방법 및 박막 패턴 형성 방법
KR101166109B1 (ko) 기판 처리 설비
JP2010177673A (ja) 基板処理設備及び基板処理方法
CN105074885B (zh) 用于高效热循环的模块化基板加热器
KR20210000129A (ko) 기판 처리 장치 및 방법
TWI684233B (zh) 基板搬運以及加熱的系統
US20150217504A1 (en) Imprint template and method for manufacturing the same
KR102467529B1 (ko) 반송 유닛, 이를 포함하는 기판 처리 장치 및 기판 처리 방법
CN108374146B (zh) 有机物沉积装置及方法
US20150197059A1 (en) Imprint apparatus and imprint method
KR20160110780A (ko) 기판 처리 장치 및 기판 처리 방법
KR20210029671A (ko) 기판 처리 장치 및 기판 처리 방법
KR102212422B1 (ko) 희생층을 이용한 광 유도 전사 방법
KR20250152490A (ko) 열원 및 화학 방사선원을 포함하는 어레이를 포함하는 시스템
KR101313168B1 (ko) 플래시 램프를 이용한 기판 표면 열처리 장치
KR20190127317A (ko) 기판 처리 장치
KR20200021818A (ko) 가열 플레이트, 이를 구비하는 기판 열처리 장치 및 가열 플레이트의 제조 방법
TW202123296A (zh) 真空裝置
KR20210047994A (ko) 기판 열처리 장치
KR20050036236A (ko) 다중 배치된 원적외선 가열모듈을 구비한 포토 레지스터스트립 장치