CN107636818B - 衬底处理与加热系统 - Google Patents

衬底处理与加热系统 Download PDF

Info

Publication number
CN107636818B
CN107636818B CN201680026696.2A CN201680026696A CN107636818B CN 107636818 B CN107636818 B CN 107636818B CN 201680026696 A CN201680026696 A CN 201680026696A CN 107636818 B CN107636818 B CN 107636818B
Authority
CN
China
Prior art keywords
substrate
light emitting
emitting diodes
disposed
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201680026696.2A
Other languages
English (en)
Chinese (zh)
Other versions
CN107636818A (zh
Inventor
摩根·D·艾文斯
杰森·M·夏勒
D·杰弗里·里斯查尔
阿拉·莫瑞迪亚
威廉·T·维弗
罗伯特·布然特·宝佩特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Semiconductor Equipment Associates Inc
Original Assignee
Varian Semiconductor Equipment Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment Associates Inc filed Critical Varian Semiconductor Equipment Associates Inc
Publication of CN107636818A publication Critical patent/CN107636818A/zh
Application granted granted Critical
Publication of CN107636818B publication Critical patent/CN107636818B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B3/00—Drying solid materials or objects by processes involving the application of heat
    • F26B3/28—Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun
    • F26B3/30—Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun from infrared-emitting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microbiology (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
CN201680026696.2A 2015-05-08 2016-04-26 衬底处理与加热系统 Active CN107636818B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/707,027 2015-05-08
US14/707,027 US10443934B2 (en) 2015-05-08 2015-05-08 Substrate handling and heating system
PCT/US2016/029326 WO2016182726A1 (en) 2015-05-08 2016-04-26 Substrate handling and heating system

Publications (2)

Publication Number Publication Date
CN107636818A CN107636818A (zh) 2018-01-26
CN107636818B true CN107636818B (zh) 2021-09-07

Family

ID=57221957

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680026696.2A Active CN107636818B (zh) 2015-05-08 2016-04-26 衬底处理与加热系统

Country Status (6)

Country Link
US (1) US10443934B2 (enExample)
JP (1) JP6783248B2 (enExample)
KR (1) KR102445265B1 (enExample)
CN (1) CN107636818B (enExample)
TW (1) TWI705517B (enExample)
WO (1) WO2016182726A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201639063A (zh) * 2015-01-22 2016-11-01 應用材料股份有限公司 批量加熱和冷卻腔室或負載鎖定裝置
US9899242B2 (en) * 2015-04-06 2018-02-20 Varian Semiconductor Equipment Associates, Inc. Device and method for substrate heating during transport
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
JP6947914B2 (ja) 2017-08-18 2021-10-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧高温下のアニールチャンバ
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
US11177128B2 (en) 2017-09-12 2021-11-16 Applied Materials, Inc. Apparatus and methods for manufacturing semiconductor structures using protective barrier layer
CN111357090B (zh) 2017-11-11 2024-01-05 微材料有限责任公司 用于高压处理腔室的气体输送系统
JP7330181B2 (ja) 2017-11-16 2023-08-21 アプライド マテリアルズ インコーポレイテッド 高圧蒸気アニール処理装置
KR20200075892A (ko) 2017-11-17 2020-06-26 어플라이드 머티어리얼스, 인코포레이티드 고압 처리 시스템을 위한 컨덴서 시스템
WO2019147405A1 (en) 2018-01-23 2019-08-01 Applied Materials, Inc. Methods and apparatus for wafer temperature measurement
CN111902929B (zh) 2018-03-09 2025-09-19 应用材料公司 用于含金属材料的高压退火处理
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10600662B2 (en) * 2018-07-20 2020-03-24 Varian Semiconductor Equipment Associates, Inc. Silicon carbide substrate heating
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
US10675581B2 (en) 2018-08-06 2020-06-09 Applied Materials, Inc. Gas abatement apparatus
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
US11109452B2 (en) 2019-11-14 2021-08-31 Applied Materials, Inc. Modular LED heater
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
CN114719750A (zh) * 2022-03-30 2022-07-08 北京烁科精微电子装备有限公司 一种晶圆切边位置检测装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101091236A (zh) * 2005-11-14 2007-12-19 东京毅力科创株式会社 加热装置、热处理装置、计算机程序及存储介质
CN101983416A (zh) * 2008-04-11 2011-03-02 东京毅力科创株式会社 退火装置
CN102254906A (zh) * 2007-09-27 2011-11-23 东京毅力科创株式会社 Led阵列

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2642216B2 (ja) * 1989-05-23 1997-08-20 サイベック システムズ 半導体物品の予備位置決め方法及び装置
JPH05315246A (ja) * 1992-05-07 1993-11-26 Sony Corp 露光装置
US5982986A (en) * 1995-02-03 1999-11-09 Applied Materials, Inc. Apparatus and method for rotationally aligning and degassing semiconductor substrate within single vacuum chamber
JP3935532B2 (ja) * 1996-08-27 2007-06-27 オリンパス株式会社 ウェハ位置決め装置
WO2001078114A1 (en) * 2000-04-07 2001-10-18 Varian Semiconductor Equipment Associates, Inc. WAFER ORIENTATION SENSOR FOR GaAs WAFERS
US6567257B2 (en) * 2000-04-19 2003-05-20 Applied Materials, Inc. Method and apparatus for conditioning an electrostatic chuck
US20030168175A1 (en) 2002-03-08 2003-09-11 Kim Kyung-Tae Substrate alignment apparatus
JP2005032906A (ja) * 2003-07-10 2005-02-03 Nikon Corp ウェハローダ及び露光装置
JP2005032926A (ja) * 2003-07-10 2005-02-03 Nikon Corp ウェハローダ及び露光装置
US20060004493A1 (en) * 2004-06-30 2006-01-05 Jack Hwang Use of active temperature control to provide emmisivity independent wafer temperature
US20070006936A1 (en) 2005-07-07 2007-01-11 Applied Materials, Inc. Load lock chamber with substrate temperature regulation
JP5084420B2 (ja) * 2007-09-21 2012-11-28 東京エレクトロン株式会社 ロードロック装置および真空処理システム
JP4616873B2 (ja) * 2007-09-28 2011-01-19 東京エレクトロン株式会社 半導体製造装置、基板保持方法及びプログラム
JP5282393B2 (ja) * 2007-11-06 2013-09-04 ウシオ電機株式会社 光照射式加熱処理装置
US8548311B2 (en) * 2008-04-09 2013-10-01 Applied Materials, Inc. Apparatus and method for improved control of heating and cooling of substrates
JP4601698B2 (ja) 2008-09-26 2010-12-22 株式会社日立国際電気 半導体製造方法及びその装置
US8404499B2 (en) * 2009-04-20 2013-03-26 Applied Materials, Inc. LED substrate processing
US20100301236A1 (en) 2009-05-26 2010-12-02 Shih-Yung Shieh Shorten Temperature Recovery Time of Low Temperature Ion Implantation
JP2011040544A (ja) * 2009-08-10 2011-02-24 Toshiba Corp 熱処理装置及び半導体装置の製造方法
US8328494B2 (en) 2009-12-15 2012-12-11 Varian Semiconductor Equipment Associates, Inc. In vacuum optical wafer heater for cryogenic processing
US20110291022A1 (en) 2010-05-28 2011-12-01 Axcelis Technologies, Inc. Post Implant Wafer Heating Using Light
JP5568495B2 (ja) * 2011-03-15 2014-08-06 東京エレクトロン株式会社 熱処理装置
DE102012005916B3 (de) * 2012-03-26 2013-06-27 Heraeus Noblelight Gmbh Vorrichtung zur Bestrahlung eines Substrats
CN104137249B (zh) * 2012-04-25 2017-11-14 应用材料公司 晶片边缘的测量和控制
CN104428879B (zh) * 2012-05-30 2018-01-30 应用材料公司 用于快速热处理的设备及方法
US9711324B2 (en) 2012-05-31 2017-07-18 Axcelis Technologies, Inc. Inert atmospheric pressure pre-chill and post-heat
US9318360B2 (en) * 2013-10-11 2016-04-19 Applied Materials, Inc. Linear high packing density for LED arrays

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101091236A (zh) * 2005-11-14 2007-12-19 东京毅力科创株式会社 加热装置、热处理装置、计算机程序及存储介质
CN102254906A (zh) * 2007-09-27 2011-11-23 东京毅力科创株式会社 Led阵列
CN101983416A (zh) * 2008-04-11 2011-03-02 东京毅力科创株式会社 退火装置

Also Published As

Publication number Publication date
JP2018522396A (ja) 2018-08-09
US20160329458A1 (en) 2016-11-10
KR102445265B1 (ko) 2022-09-20
KR20180005204A (ko) 2018-01-15
WO2016182726A1 (en) 2016-11-17
TWI705517B (zh) 2020-09-21
US10443934B2 (en) 2019-10-15
TW201642381A (zh) 2016-12-01
JP6783248B2 (ja) 2020-11-11
CN107636818A (zh) 2018-01-26

Similar Documents

Publication Publication Date Title
CN107636818B (zh) 衬底处理与加热系统
US9685303B2 (en) Apparatus for heating and processing a substrate
KR101166109B1 (ko) 기판 처리 설비
TW201531818A (zh) 曝光裝置、光阻圖案形成方法及記憶媒體
US20090045182A1 (en) Pulsed laser anneal system architecture
KR101408521B1 (ko) 프리 얼라이먼트 장치 및 프리 얼라이먼트 방법
US9287148B1 (en) Dynamic heating method and system for wafer processing
KR20130111993A (ko) 노광 장치, 기판 처리 장치, 기판의 노광 방법 및 기판 처리 방법
KR20130024808A (ko) 기판 열처리 장치
KR101560874B1 (ko) 기판 급속 열적 가열 시스템 및 방법
US20220093422A1 (en) Heating device and heating method
US9915881B2 (en) Lithography apparatus and article manufacturing method
KR20200125462A (ko) 기판 처리 장치 및 기판 처리 방법
JP5452166B2 (ja) アライナ装置、及びそれを備える半導体処理設備
US9899242B2 (en) Device and method for substrate heating during transport
US20150217504A1 (en) Imprint template and method for manufacturing the same
JP2009076859A (ja) 基板上の堆積層を硬化させるシステム及び方法
KR20160110780A (ko) 기판 처리 장치 및 기판 처리 방법
JP5799304B2 (ja) 露光ユニット及びそれを用いた露光方法
US20210143030A1 (en) Wafer to wafer bonding apparatus, wafer to wafer bonding system, and wafer to wafer bonding method
JP2022169211A (ja) ウエハアライメント装置、半導体製造装置および基板搬送装置
KR20170008370A (ko) 반도체 장치를 위한 광 조사 시스템 및 그 제어 방법
KR102472950B1 (ko) 냉각/가열 복합 장치, 이를 구비하는 접착 필름 절단 어셈블리 및 접착 필름 절단 장비
US20230176485A1 (en) Apparatus for treating substrate and method for treating substrate
KR20230106509A (ko) 보조 노광 장치, 노광 방법 및 기억 매체

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant