JP6779816B2 - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP6779816B2
JP6779816B2 JP2017054925A JP2017054925A JP6779816B2 JP 6779816 B2 JP6779816 B2 JP 6779816B2 JP 2017054925 A JP2017054925 A JP 2017054925A JP 2017054925 A JP2017054925 A JP 2017054925A JP 6779816 B2 JP6779816 B2 JP 6779816B2
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JP
Japan
Prior art keywords
temperature
voltage
signal
storage device
semiconductor storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2017054925A
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English (en)
Japanese (ja)
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JP2018156718A (ja
JP2018156718A5 (https=
Inventor
昌宏 細谷
昌宏 細谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kioxia Corp
Original Assignee
Kioxia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kioxia Corp filed Critical Kioxia Corp
Priority to JP2017054925A priority Critical patent/JP6779816B2/ja
Priority to TW106124254A priority patent/TWI642061B/zh
Priority to CN201710712653.6A priority patent/CN108630281B/zh
Priority to US15/693,402 priority patent/US10242745B2/en
Publication of JP2018156718A publication Critical patent/JP2018156718A/ja
Publication of JP2018156718A5 publication Critical patent/JP2018156718A5/ja
Application granted granted Critical
Publication of JP6779816B2 publication Critical patent/JP6779816B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G11C16/105—Circuits or methods for updating contents of nonvolatile memory, especially with 'security' features to ensure reliable replacement, i.e. preventing that old data is lost before new data is reliably written
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Security & Cryptography (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Analogue/Digital Conversion (AREA)
JP2017054925A 2017-03-21 2017-03-21 半導体記憶装置 Expired - Fee Related JP6779816B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017054925A JP6779816B2 (ja) 2017-03-21 2017-03-21 半導体記憶装置
TW106124254A TWI642061B (zh) 2017-03-21 2017-07-20 Semiconductor memory device
CN201710712653.6A CN108630281B (zh) 2017-03-21 2017-08-18 半导体存储装置
US15/693,402 US10242745B2 (en) 2017-03-21 2017-08-31 Semiconductor memory device that generates voltages applied to memory cells based on a signal from a temperature sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017054925A JP6779816B2 (ja) 2017-03-21 2017-03-21 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2018156718A JP2018156718A (ja) 2018-10-04
JP2018156718A5 JP2018156718A5 (https=) 2019-05-09
JP6779816B2 true JP6779816B2 (ja) 2020-11-04

Family

ID=63583543

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017054925A Expired - Fee Related JP6779816B2 (ja) 2017-03-21 2017-03-21 半導体記憶装置

Country Status (4)

Country Link
US (1) US10242745B2 (https=)
JP (1) JP6779816B2 (https=)
CN (1) CN108630281B (https=)
TW (1) TWI642061B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7214464B2 (ja) * 2018-12-20 2023-01-30 キオクシア株式会社 半導体記憶装置
US11320322B2 (en) * 2019-04-09 2022-05-03 Winbond Electronics Corp. Temperature sensor evaluation method
JP2022035175A (ja) 2020-08-20 2022-03-04 キオクシア株式会社 半導体記憶装置
JP2022038392A (ja) * 2020-08-26 2022-03-10 キオクシア株式会社 半導体記憶装置及び半導体記憶装置におけるコマンド処理方法
JP2022045789A (ja) 2020-09-09 2022-03-22 キオクシア株式会社 半導体記憶装置

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003338177A (ja) * 2002-05-22 2003-11-28 Mitsubishi Electric Corp 半導体記憶装置
US6967877B2 (en) * 2003-09-09 2005-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. Temperature detecting circuit for controlling a self-refresh period of a semiconductor memory device
US7180211B2 (en) * 2003-09-22 2007-02-20 Micro Technology, Inc. Temperature sensor
KR100611775B1 (ko) * 2003-12-29 2006-08-10 주식회사 하이닉스반도체 온도변화에 따라 최적의 리프레쉬 주기를 가지는 반도체메모리 장치
KR100733427B1 (ko) * 2004-02-19 2007-06-29 주식회사 하이닉스반도체 아날로그-디지털 변환기
US7413343B2 (en) * 2005-09-16 2008-08-19 Kyocera Wireless Corp. Apparatus for determining a temperature sensing element
KR100799102B1 (ko) * 2005-09-29 2008-01-29 주식회사 하이닉스반도체 온도 보상된 셀프리프레쉬 주기를 위한 메모리 장치
KR100675293B1 (ko) * 2005-10-17 2007-01-29 삼성전자주식회사 온도 감지 회로
KR100816690B1 (ko) * 2006-04-13 2008-03-27 주식회사 하이닉스반도체 온도 감지장치를 구비하는 반도체메모리소자
KR100766379B1 (ko) * 2006-08-11 2007-10-12 주식회사 하이닉스반도체 반도체 메모리 장치의 온도 감지 회로
KR100807594B1 (ko) * 2006-09-28 2008-02-28 주식회사 하이닉스반도체 온도 정보 출력장치 및 그를 구비하는 반도체소자
KR100806609B1 (ko) * 2006-11-02 2008-02-25 주식회사 하이닉스반도체 반도체 메모리 소자의 온도 정보 출력장치
ITRM20060652A1 (it) * 2006-12-06 2008-06-07 Micron Technology Inc Compensazione di temperatura di segnali di memoria impiegando segnali digitali
US7817467B2 (en) * 2007-09-07 2010-10-19 Micron Technology, Inc. Memory controller self-calibration for removing systemic influence
KR100983700B1 (ko) * 2008-04-18 2010-09-24 주식회사 하이닉스반도체 Ｒｆｉｄ 장치
KR101541706B1 (ko) * 2009-01-19 2015-08-05 삼성전자주식회사 온도 감지 발진 회로 및 이를 포함하는 반도체 메모리 장치
JP2012023499A (ja) * 2010-07-13 2012-02-02 Panasonic Corp Ａｄ変換器を備えた温度検知回路及び半導体集積回路
JP5729544B2 (ja) * 2011-02-03 2015-06-03 セイコーエプソン株式会社 温度検出回路
US8472274B2 (en) 2011-03-02 2013-06-25 Apple Inc. Using temperature sensors with a memory device
JP5542737B2 (ja) 2011-05-12 2014-07-09 株式会社東芝 不揮発性半導体記憶装置
KR20160121204A (ko) * 2015-04-10 2016-10-19 에스케이하이닉스 주식회사 집적 회로
JP6784020B2 (ja) * 2015-12-03 2020-11-11 セイコーエプソン株式会社 回路装置、発振器、電子機器及び移動体
JP6750211B2 (ja) * 2015-12-03 2020-09-02 セイコーエプソン株式会社 回路装置、発振器、電子機器及び移動体
JP6736871B2 (ja) * 2015-12-03 2020-08-05 セイコーエプソン株式会社 回路装置、発振器、電子機器及び移動体

Also Published As

Publication number Publication date
JP2018156718A (ja) 2018-10-04
CN108630281A (zh) 2018-10-09
US10242745B2 (en) 2019-03-26
CN108630281B (zh) 2022-03-18
TW201835902A (zh) 2018-10-01
TWI642061B (zh) 2018-11-21
US20180277223A1 (en) 2018-09-27

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