JP2018156718A5 - - Google Patents
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- JP2018156718A5 JP2018156718A5 JP2017054925A JP2017054925A JP2018156718A5 JP 2018156718 A5 JP2018156718 A5 JP 2018156718A5 JP 2017054925 A JP2017054925 A JP 2017054925A JP 2017054925 A JP2017054925 A JP 2017054925A JP 2018156718 A5 JP2018156718 A5 JP 2018156718A5
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- Prior art keywords
- temperature
- bit
- successive approximation
- determines
- approximation register
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 101100029848 Arabidopsis thaliana PIP1-2 gene Proteins 0.000 description 11
- 101100029851 Arabidopsis thaliana PIP1-3 gene Proteins 0.000 description 11
- WVLBCYQITXONBZ-UHFFFAOYSA-N trimethyl phosphate Chemical compound COP(=O)(OC)OC WVLBCYQITXONBZ-UHFFFAOYSA-N 0.000 description 11
- 101000831851 Homo sapiens Transmembrane emp24 domain-containing protein 10 Proteins 0.000 description 5
- 102100024180 Transmembrane emp24 domain-containing protein 10 Human genes 0.000 description 5
- 101001073211 Solanum lycopersicum Suberization-associated anionic peroxidase 2 Proteins 0.000 description 4
- 101100008041 Arabidopsis thaliana CURT1B gene Proteins 0.000 description 3
- 101000585872 Homo sapiens Opalin Proteins 0.000 description 3
- 102100030153 Opalin Human genes 0.000 description 3
- 101000579490 Solanum lycopersicum Suberization-associated anionic peroxidase 1 Proteins 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017054925A JP6779816B2 (ja) | 2017-03-21 | 2017-03-21 | 半導体記憶装置 |
| TW106124254A TWI642061B (zh) | 2017-03-21 | 2017-07-20 | Semiconductor memory device |
| CN201710712653.6A CN108630281B (zh) | 2017-03-21 | 2017-08-18 | 半导体存储装置 |
| US15/693,402 US10242745B2 (en) | 2017-03-21 | 2017-08-31 | Semiconductor memory device that generates voltages applied to memory cells based on a signal from a temperature sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017054925A JP6779816B2 (ja) | 2017-03-21 | 2017-03-21 | 半導体記憶装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018156718A JP2018156718A (ja) | 2018-10-04 |
| JP2018156718A5 true JP2018156718A5 (https=) | 2019-05-09 |
| JP6779816B2 JP6779816B2 (ja) | 2020-11-04 |
Family
ID=63583543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017054925A Expired - Fee Related JP6779816B2 (ja) | 2017-03-21 | 2017-03-21 | 半導体記憶装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10242745B2 (https=) |
| JP (1) | JP6779816B2 (https=) |
| CN (1) | CN108630281B (https=) |
| TW (1) | TWI642061B (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7214464B2 (ja) * | 2018-12-20 | 2023-01-30 | キオクシア株式会社 | 半導体記憶装置 |
| US11320322B2 (en) * | 2019-04-09 | 2022-05-03 | Winbond Electronics Corp. | Temperature sensor evaluation method |
| JP2022035175A (ja) | 2020-08-20 | 2022-03-04 | キオクシア株式会社 | 半導体記憶装置 |
| JP2022038392A (ja) * | 2020-08-26 | 2022-03-10 | キオクシア株式会社 | 半導体記憶装置及び半導体記憶装置におけるコマンド処理方法 |
| JP2022045789A (ja) | 2020-09-09 | 2022-03-22 | キオクシア株式会社 | 半導体記憶装置 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003338177A (ja) * | 2002-05-22 | 2003-11-28 | Mitsubishi Electric Corp | 半導体記憶装置 |
| US6967877B2 (en) * | 2003-09-09 | 2005-11-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Temperature detecting circuit for controlling a self-refresh period of a semiconductor memory device |
| US7180211B2 (en) * | 2003-09-22 | 2007-02-20 | Micro Technology, Inc. | Temperature sensor |
| KR100611775B1 (ko) * | 2003-12-29 | 2006-08-10 | 주식회사 하이닉스반도체 | 온도변화에 따라 최적의 리프레쉬 주기를 가지는 반도체메모리 장치 |
| KR100733427B1 (ko) * | 2004-02-19 | 2007-06-29 | 주식회사 하이닉스반도체 | 아날로그-디지털 변환기 |
| US7413343B2 (en) * | 2005-09-16 | 2008-08-19 | Kyocera Wireless Corp. | Apparatus for determining a temperature sensing element |
| KR100799102B1 (ko) * | 2005-09-29 | 2008-01-29 | 주식회사 하이닉스반도체 | 온도 보상된 셀프리프레쉬 주기를 위한 메모리 장치 |
| KR100675293B1 (ko) * | 2005-10-17 | 2007-01-29 | 삼성전자주식회사 | 온도 감지 회로 |
| KR100816690B1 (ko) * | 2006-04-13 | 2008-03-27 | 주식회사 하이닉스반도체 | 온도 감지장치를 구비하는 반도체메모리소자 |
| KR100766379B1 (ko) * | 2006-08-11 | 2007-10-12 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 온도 감지 회로 |
| KR100807594B1 (ko) * | 2006-09-28 | 2008-02-28 | 주식회사 하이닉스반도체 | 온도 정보 출력장치 및 그를 구비하는 반도체소자 |
| KR100806609B1 (ko) * | 2006-11-02 | 2008-02-25 | 주식회사 하이닉스반도체 | 반도체 메모리 소자의 온도 정보 출력장치 |
| ITRM20060652A1 (it) * | 2006-12-06 | 2008-06-07 | Micron Technology Inc | Compensazione di temperatura di segnali di memoria impiegando segnali digitali |
| US7817467B2 (en) * | 2007-09-07 | 2010-10-19 | Micron Technology, Inc. | Memory controller self-calibration for removing systemic influence |
| KR100983700B1 (ko) * | 2008-04-18 | 2010-09-24 | 주식회사 하이닉스반도체 | Ｒｆｉｄ 장치 |
| KR101541706B1 (ko) * | 2009-01-19 | 2015-08-05 | 삼성전자주식회사 | 온도 감지 발진 회로 및 이를 포함하는 반도체 메모리 장치 |
| JP2012023499A (ja) * | 2010-07-13 | 2012-02-02 | Panasonic Corp | Ａｄ変換器を備えた温度検知回路及び半導体集積回路 |
| JP5729544B2 (ja) * | 2011-02-03 | 2015-06-03 | セイコーエプソン株式会社 | 温度検出回路 |
| US8472274B2 (en) | 2011-03-02 | 2013-06-25 | Apple Inc. | Using temperature sensors with a memory device |
| JP5542737B2 (ja) | 2011-05-12 | 2014-07-09 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| KR20160121204A (ko) * | 2015-04-10 | 2016-10-19 | 에스케이하이닉스 주식회사 | 집적 회로 |
| JP6784020B2 (ja) * | 2015-12-03 | 2020-11-11 | セイコーエプソン株式会社 | 回路装置、発振器、電子機器及び移動体 |
| JP6750211B2 (ja) * | 2015-12-03 | 2020-09-02 | セイコーエプソン株式会社 | 回路装置、発振器、電子機器及び移動体 |
| JP6736871B2 (ja) * | 2015-12-03 | 2020-08-05 | セイコーエプソン株式会社 | 回路装置、発振器、電子機器及び移動体 |
-
2017
- 2017-03-21 JP JP2017054925A patent/JP6779816B2/ja not_active Expired - Fee Related
- 2017-07-20 TW TW106124254A patent/TWI642061B/zh not_active IP Right Cessation
- 2017-08-18 CN CN201710712653.6A patent/CN108630281B/zh not_active Expired - Fee Related
- 2017-08-31 US US15/693,402 patent/US10242745B2/en not_active Expired - Fee Related
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