TWI642061B - Semiconductor memory device - Google Patents
Semiconductor memory device Download PDFInfo
- Publication number
- TWI642061B TWI642061B TW106124254A TW106124254A TWI642061B TW I642061 B TWI642061 B TW I642061B TW 106124254 A TW106124254 A TW 106124254A TW 106124254 A TW106124254 A TW 106124254A TW I642061 B TWI642061 B TW I642061B
- Authority
- TW
- Taiwan
- Prior art keywords
- temperature
- voltage
- signal
- circuit
- bit
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 53
- 238000009529 body temperature measurement Methods 0.000 claims abstract description 24
- 230000008859 change Effects 0.000 claims abstract description 18
- 238000006243 chemical reaction Methods 0.000 description 22
- 238000005070 sampling Methods 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 13
- 101100029848 Arabidopsis thaliana PIP1-2 gene Proteins 0.000 description 12
- 101100029851 Arabidopsis thaliana PIP1-3 gene Proteins 0.000 description 12
- WVLBCYQITXONBZ-UHFFFAOYSA-N trimethyl phosphate Chemical compound COP(=O)(OC)OC WVLBCYQITXONBZ-UHFFFAOYSA-N 0.000 description 12
- 230000009471 action Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- 101000831851 Homo sapiens Transmembrane emp24 domain-containing protein 10 Proteins 0.000 description 6
- 102100024180 Transmembrane emp24 domain-containing protein 10 Human genes 0.000 description 6
- GYOZYWVXFNDGLU-XLPZGREQSA-N dTMP Chemical compound O=C1NC(=O)C(C)=CN1[C@@H]1O[C@H](COP(O)(O)=O)[C@@H](O)C1 GYOZYWVXFNDGLU-XLPZGREQSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 101000579490 Solanum lycopersicum Suberization-associated anionic peroxidase 1 Proteins 0.000 description 5
- 101001073211 Solanum lycopersicum Suberization-associated anionic peroxidase 2 Proteins 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 101100008041 Arabidopsis thaliana CURT1B gene Proteins 0.000 description 3
- 101000585872 Homo sapiens Opalin Proteins 0.000 description 3
- 102100030153 Opalin Human genes 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000012217 deletion Methods 0.000 description 3
- 230000037430 deletion Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
- G11C16/105—Circuits or methods for updating contents of nonvolatile memory, especially with 'security' features to ensure reliable replacement, i.e. preventing that old data is lost before new data is reliably written
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/32—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Security & Cryptography (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Analogue/Digital Conversion (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017054925A JP6779816B2 (ja) | 2017-03-21 | 2017-03-21 | 半導体記憶装置 |
| JP??2017-054925 | 2017-03-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201835902A TW201835902A (zh) | 2018-10-01 |
| TWI642061B true TWI642061B (zh) | 2018-11-21 |
Family
ID=63583543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106124254A TWI642061B (zh) | 2017-03-21 | 2017-07-20 | Semiconductor memory device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10242745B2 (https=) |
| JP (1) | JP6779816B2 (https=) |
| CN (1) | CN108630281B (https=) |
| TW (1) | TWI642061B (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7214464B2 (ja) * | 2018-12-20 | 2023-01-30 | キオクシア株式会社 | 半導体記憶装置 |
| US11320322B2 (en) * | 2019-04-09 | 2022-05-03 | Winbond Electronics Corp. | Temperature sensor evaluation method |
| JP2022035175A (ja) | 2020-08-20 | 2022-03-04 | キオクシア株式会社 | 半導体記憶装置 |
| JP2022038392A (ja) * | 2020-08-26 | 2022-03-10 | キオクシア株式会社 | 半導体記憶装置及び半導体記憶装置におけるコマンド処理方法 |
| JP2022045789A (ja) | 2020-09-09 | 2022-03-22 | キオクシア株式会社 | 半導体記憶装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050063120A1 (en) * | 2003-09-22 | 2005-03-24 | Sinha Manoj K. | Temperature sensor |
| US20080137460A1 (en) * | 2006-12-06 | 2008-06-12 | Micron Technology, Inc. | Temperature compensation of memory signals using digital signals |
| US7990776B2 (en) * | 2003-12-29 | 2011-08-02 | Hynix Semiconductor Inc. | Semiconductor memory device with optimum refresh cycle according to temperature variation |
| US8032323B2 (en) * | 2005-09-16 | 2011-10-04 | Kyocera Corporation | Apparatus and method for determining a temperature of a temperature sensing element |
| US20120014198A1 (en) * | 2006-04-13 | 2012-01-19 | Kim Kyung-Hoon | Semiconductor memory device with temperature sensing device capable of minimizing power consumption in refresh |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003338177A (ja) * | 2002-05-22 | 2003-11-28 | Mitsubishi Electric Corp | 半導体記憶装置 |
| US6967877B2 (en) * | 2003-09-09 | 2005-11-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Temperature detecting circuit for controlling a self-refresh period of a semiconductor memory device |
| KR100733427B1 (ko) * | 2004-02-19 | 2007-06-29 | 주식회사 하이닉스반도체 | 아날로그-디지털 변환기 |
| KR100799102B1 (ko) * | 2005-09-29 | 2008-01-29 | 주식회사 하이닉스반도체 | 온도 보상된 셀프리프레쉬 주기를 위한 메모리 장치 |
| KR100675293B1 (ko) * | 2005-10-17 | 2007-01-29 | 삼성전자주식회사 | 온도 감지 회로 |
| KR100766379B1 (ko) * | 2006-08-11 | 2007-10-12 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 온도 감지 회로 |
| KR100807594B1 (ko) * | 2006-09-28 | 2008-02-28 | 주식회사 하이닉스반도체 | 온도 정보 출력장치 및 그를 구비하는 반도체소자 |
| KR100806609B1 (ko) * | 2006-11-02 | 2008-02-25 | 주식회사 하이닉스반도체 | 반도체 메모리 소자의 온도 정보 출력장치 |
| US7817467B2 (en) * | 2007-09-07 | 2010-10-19 | Micron Technology, Inc. | Memory controller self-calibration for removing systemic influence |
| KR100983700B1 (ko) * | 2008-04-18 | 2010-09-24 | 주식회사 하이닉스반도체 | Ｒｆｉｄ 장치 |
| KR101541706B1 (ko) * | 2009-01-19 | 2015-08-05 | 삼성전자주식회사 | 온도 감지 발진 회로 및 이를 포함하는 반도체 메모리 장치 |
| JP2012023499A (ja) * | 2010-07-13 | 2012-02-02 | Panasonic Corp | Ａｄ変換器を備えた温度検知回路及び半導体集積回路 |
| JP5729544B2 (ja) * | 2011-02-03 | 2015-06-03 | セイコーエプソン株式会社 | 温度検出回路 |
| US8472274B2 (en) | 2011-03-02 | 2013-06-25 | Apple Inc. | Using temperature sensors with a memory device |
| JP5542737B2 (ja) | 2011-05-12 | 2014-07-09 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| KR20160121204A (ko) * | 2015-04-10 | 2016-10-19 | 에스케이하이닉스 주식회사 | 집적 회로 |
| JP6784020B2 (ja) * | 2015-12-03 | 2020-11-11 | セイコーエプソン株式会社 | 回路装置、発振器、電子機器及び移動体 |
| JP6750211B2 (ja) * | 2015-12-03 | 2020-09-02 | セイコーエプソン株式会社 | 回路装置、発振器、電子機器及び移動体 |
| JP6736871B2 (ja) * | 2015-12-03 | 2020-08-05 | セイコーエプソン株式会社 | 回路装置、発振器、電子機器及び移動体 |
-
2017
- 2017-03-21 JP JP2017054925A patent/JP6779816B2/ja not_active Expired - Fee Related
- 2017-07-20 TW TW106124254A patent/TWI642061B/zh not_active IP Right Cessation
- 2017-08-18 CN CN201710712653.6A patent/CN108630281B/zh not_active Expired - Fee Related
- 2017-08-31 US US15/693,402 patent/US10242745B2/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050063120A1 (en) * | 2003-09-22 | 2005-03-24 | Sinha Manoj K. | Temperature sensor |
| US7990776B2 (en) * | 2003-12-29 | 2011-08-02 | Hynix Semiconductor Inc. | Semiconductor memory device with optimum refresh cycle according to temperature variation |
| US8032323B2 (en) * | 2005-09-16 | 2011-10-04 | Kyocera Corporation | Apparatus and method for determining a temperature of a temperature sensing element |
| US20120014198A1 (en) * | 2006-04-13 | 2012-01-19 | Kim Kyung-Hoon | Semiconductor memory device with temperature sensing device capable of minimizing power consumption in refresh |
| US20080137460A1 (en) * | 2006-12-06 | 2008-06-12 | Micron Technology, Inc. | Temperature compensation of memory signals using digital signals |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2018156718A (ja) | 2018-10-04 |
| CN108630281A (zh) | 2018-10-09 |
| US10242745B2 (en) | 2019-03-26 |
| CN108630281B (zh) | 2022-03-18 |
| TW201835902A (zh) | 2018-10-01 |
| US20180277223A1 (en) | 2018-09-27 |
| JP6779816B2 (ja) | 2020-11-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |