JP6773698B2 - 可変利得電力増幅器 - Google Patents
可変利得電力増幅器 Download PDFInfo
- Publication number
- JP6773698B2 JP6773698B2 JP2017568253A JP2017568253A JP6773698B2 JP 6773698 B2 JP6773698 B2 JP 6773698B2 JP 2017568253 A JP2017568253 A JP 2017568253A JP 2017568253 A JP2017568253 A JP 2017568253A JP 6773698 B2 JP6773698 B2 JP 6773698B2
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- coupled
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- Prior art date
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- 239000003990 capacitor Substances 0.000 claims description 69
- 238000000034 method Methods 0.000 claims description 32
- 230000003321 amplification Effects 0.000 claims description 15
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 15
- 230000010355 oscillation Effects 0.000 claims 7
- 230000010354 integration Effects 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 42
- 230000002238 attenuated effect Effects 0.000 description 12
- 230000001629 suppression Effects 0.000 description 6
- 101000860173 Myxococcus xanthus C-factor Proteins 0.000 description 5
- 238000013016 damping Methods 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 230000010363 phase shift Effects 0.000 description 4
- 238000010079 rubber tapping Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 239000001729 Ammonium fumarate Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
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- 230000015556 catabolic process Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
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- 238000012545 processing Methods 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/1262—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements
- H03B5/1265—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements switched capacitors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45197—Pl types
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/004—Control by varying the supply voltage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
- H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B2001/0408—Circuits with power amplifiers
- H04B2001/0416—Circuits with power amplifiers having gain or transmission power control
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
- Control Of Amplification And Gain Control (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020167244A JP6978714B2 (ja) | 2015-06-30 | 2020-10-01 | 可変利得電力増幅器 |
| JP2021174121A JP7514051B2 (ja) | 2015-06-30 | 2021-10-25 | 可変利得電力増幅器 |
| JP2024101273A JP2024111289A (ja) | 2015-06-30 | 2024-06-24 | 可変利得電力増幅器 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/755,462 US9685907B2 (en) | 2015-06-30 | 2015-06-30 | Variable gain power amplifiers |
| US14/755,462 | 2015-06-30 | ||
| PCT/US2016/040572 WO2017004459A1 (en) | 2015-06-30 | 2016-06-30 | Variable gain power amplifiers |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020167244A Division JP6978714B2 (ja) | 2015-06-30 | 2020-10-01 | 可変利得電力増幅器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018519760A JP2018519760A (ja) | 2018-07-19 |
| JP2018519760A5 JP2018519760A5 (enExample) | 2019-07-11 |
| JP6773698B2 true JP6773698B2 (ja) | 2020-10-21 |
Family
ID=57609606
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017568253A Active JP6773698B2 (ja) | 2015-06-30 | 2016-06-30 | 可変利得電力増幅器 |
| JP2020167244A Active JP6978714B2 (ja) | 2015-06-30 | 2020-10-01 | 可変利得電力増幅器 |
| JP2021174121A Active JP7514051B2 (ja) | 2015-06-30 | 2021-10-25 | 可変利得電力増幅器 |
| JP2024101273A Pending JP2024111289A (ja) | 2015-06-30 | 2024-06-24 | 可変利得電力増幅器 |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020167244A Active JP6978714B2 (ja) | 2015-06-30 | 2020-10-01 | 可変利得電力増幅器 |
| JP2021174121A Active JP7514051B2 (ja) | 2015-06-30 | 2021-10-25 | 可変利得電力増幅器 |
| JP2024101273A Pending JP2024111289A (ja) | 2015-06-30 | 2024-06-24 | 可変利得電力増幅器 |
Country Status (4)
| Country | Link |
|---|---|
| US (6) | US9685907B2 (enExample) |
| JP (4) | JP6773698B2 (enExample) |
| CN (2) | CN114123998A (enExample) |
| WO (1) | WO2017004459A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI619354B (zh) * | 2017-01-26 | 2018-03-21 | 瑞昱半導體股份有限公司 | 射頻收發裝置及其射頻發射機 |
| US11931525B2 (en) | 2018-10-04 | 2024-03-19 | Edwards Lifesciences Corporation | Stabilizer for a delivery system |
| CN111756339B (zh) * | 2018-12-07 | 2025-03-14 | 曹秀妹 | 一种可切换工作功率的双模式功率放大器及模式切换方法 |
| WO2021081950A1 (zh) | 2019-10-31 | 2021-05-06 | 华为技术有限公司 | 一种振荡器电路 |
| CN113517870B (zh) * | 2021-08-23 | 2025-01-07 | 苏州矽典微智能科技有限公司 | 可变增益放大器及其应用 |
| CN115882800B (zh) * | 2021-09-29 | 2025-10-28 | 瑞昱半导体股份有限公司 | 具有适应机制的信号增益调整电路及方法 |
| TWI790867B (zh) | 2021-12-21 | 2023-01-21 | 財團法人工業技術研究院 | 壓控振盪裝置 |
| TWI826096B (zh) * | 2022-11-03 | 2023-12-11 | 財團法人工業技術研究院 | 開關電路以及提供開關電路的方法 |
| TWI848641B (zh) * | 2023-03-29 | 2024-07-11 | 國立彰化師範大學 | 寬頻阻抗匹配之放大器電路 |
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| US20200112286A1 (en) | 2020-04-09 |
| US20170288796A1 (en) | 2017-10-05 |
| US20220140787A1 (en) | 2022-05-05 |
| CN107710601B (zh) | 2021-12-31 |
| JP2022009471A (ja) | 2022-01-14 |
| US11705863B2 (en) | 2023-07-18 |
| US20170005616A1 (en) | 2017-01-05 |
| JP2024111289A (ja) | 2024-08-16 |
| US9685907B2 (en) | 2017-06-20 |
| CN114123998A (zh) | 2022-03-01 |
| CN107710601A (zh) | 2018-02-16 |
| WO2017004459A1 (en) | 2017-01-05 |
| US12119789B2 (en) | 2024-10-15 |
| US10536113B2 (en) | 2020-01-14 |
| JP2018519760A (ja) | 2018-07-19 |
| US20210013833A1 (en) | 2021-01-14 |
| US10797646B2 (en) | 2020-10-06 |
| US11258404B2 (en) | 2022-02-22 |
| JP6978714B2 (ja) | 2021-12-08 |
| US20230318529A1 (en) | 2023-10-05 |
| JP7514051B2 (ja) | 2024-07-10 |
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