JP5900756B2 - 電力増幅モジュール - Google Patents
電力増幅モジュール Download PDFInfo
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- JP5900756B2 JP5900756B2 JP2014038745A JP2014038745A JP5900756B2 JP 5900756 B2 JP5900756 B2 JP 5900756B2 JP 2014038745 A JP2014038745 A JP 2014038745A JP 2014038745 A JP2014038745 A JP 2014038745A JP 5900756 B2 JP5900756 B2 JP 5900756B2
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- power
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- power amplifier
- input terminal
- amplification module
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- 230000003321 amplification Effects 0.000 title claims description 41
- 238000003199 nucleic acid amplification method Methods 0.000 title claims description 41
- 230000005540 biological transmission Effects 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims 2
- 238000004088 simulation Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 238000002955 isolation Methods 0.000 description 6
- 238000004891 communication Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 230000001808 coupling effect Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010295 mobile communication Methods 0.000 description 3
- 238000001914 filtration Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/191—Tuned amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
- H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B1/0458—Arrangements for matching and coupling between power amplifier and antenna or between amplifying stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/111—Indexing scheme relating to amplifiers the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/27—A biasing circuit node being switched in an amplifier circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/318—A matching circuit being used as coupling element between two amplifying stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/429—Two or more amplifiers or one amplifier with filters for different frequency bands are coupled in parallel at the input or output
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21142—Output signals of a plurality of power amplifiers are parallel combined to a common output
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F2203/7206—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch in the bias circuit of the amplifier controlling a bias voltage in the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F2203/7209—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched from a first band to a second band
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F2203/7236—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B2001/0408—Circuits with power amplifiers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
- Transceivers (AREA)
Description
110 ベースバンド部
120 RF部
130 一体型送受信モジュール
140 アンテナ
150 送信モジュール
160 受信モジュール
170 アンテナスイッチ
180 電力増幅モジュール
200 HBTチップ
201,202,250〜255 整合回路
210 バイアス制御回路
220 スイッチ
230〜235 電力増幅器
240〜245 バイアス回路
Claims (6)
- 第1の周波数帯域の第1の無線周波数信号が入力される第1の信号入力端子と、
第2の周波数帯域の第2の無線周波数信号が入力される第2の信号入力端子と、
第1〜第3の電力増幅器と、
バイアス制御回路と、
を備え、
前記第1の信号入力端子と前記第1の電力増幅器の入力端子とが電気的に接続され、
前記第2の信号入力端子と前記第2の電力増幅器の入力端子とが電気的に接続され、
前記第1及び第2の電力増幅器の出力端子と前記第3の電力増幅器の入力端子とが電気的に接続され、
前記バイアス制御回路は、前記第1及び第2の周波数帯域のうちの選択された周波数帯域に応じて、前記第1及び第2の電力増幅器の一方にバイアス電流を供給するための制御をする、
電力増幅モジュール。 - 請求項1に記載の電力増幅モジュールであって、
前記第1及び第2の電力増幅器の出力端子と前記第3の電力増幅器の入力端子との接続点と、前記第1の電力増幅器の出力端子との間に設けられた第1のインダクタと、
前記接続点と、前記第2の電力増幅器の出力端子との間に設けられた第2のインダクタと、
を備える電力増幅モジュール。 - 請求項2に記載の電力増幅モジュールであって、
前記第1の周波数帯域は、前記第2の周波数帯域より高い周波数帯域であり、
前記第2のインダクタのインダクタンスは、前記第1のインダクタのインダクタンスより大きい、
電力増幅モジュール。 - 請求項1〜3の何れか一項に記載の電力増幅モジュールであって、
前記第1及び第2の電力増幅器の出力端子と前記第3の電力増幅器の入力端子との間に電気的に接続されるシャント接続端子と、
一端が前記シャント接続端子と電気的に接続され、他端が接地される第3のインダクタとをさらに備え、
前記第1及び第2の信号入力端子は、半導体集積回路の第1の辺に形成され、
前記シャント接続端子は、前記半導体集積回路の前記第1の辺に隣接する第2の辺に形成され、
前記第1及び第2の信号入力端子に接続される配線の向きと、前記シャント接続端子に接続される配線の向きとが直交する、
電力増幅モジュール。 - 請求項1〜4の何れか一項に記載の電力増幅モジュールであって、
第3の周波数帯域の第3の無線周波数信号が入力される第3の信号入力端子と、
第4の周波数帯域の第4の無線周波数信号が入力される第4の信号入力端子と、
第4〜第6の電力増幅器と、
をさらに備え、
前記第3の信号入力端子と前記第4の電力増幅器の入力端子とが電気的に接続され、
前記第4の信号入力端子と前記第5の電力増幅器の入力端子とが電気的に接続され、
前記第4及び第5の電力増幅器の出力端子と前記第6の電力増幅器の入力端子とが電気的に接続され、
前記バイアス制御回路は、第1〜第4の周波数帯域のうちの選択された周波数帯域に応じて、前記第1〜第4の電力増幅器のいずれかにバイアス電流を供給するように構成され、
前記第1〜第3の電力増幅器と、前記第4〜第6の電力増幅器とは、略線対称に配置されてなる、
電力増幅モジュール。 - 請求項1〜5の何れか一項に記載の電力増幅モジュールを含み、アンテナを介して無線周波数信号を送信する送信モジュールと、
前記アンテナを介して無線周波数信号を受信する受信モジュールと、
を備える一体型送受信モジュール。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014038745A JP5900756B2 (ja) | 2014-02-28 | 2014-02-28 | 電力増幅モジュール |
US14/620,968 US9397710B2 (en) | 2014-02-28 | 2015-02-12 | Power amplifier module |
CN201510090710.2A CN104883143B (zh) | 2014-02-28 | 2015-02-28 | 功率放大模块 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014038745A JP5900756B2 (ja) | 2014-02-28 | 2014-02-28 | 電力増幅モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015162875A JP2015162875A (ja) | 2015-09-07 |
JP5900756B2 true JP5900756B2 (ja) | 2016-04-06 |
Family
ID=53950500
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014038745A Active JP5900756B2 (ja) | 2014-02-28 | 2014-02-28 | 電力増幅モジュール |
Country Status (3)
Country | Link |
---|---|
US (1) | US9397710B2 (ja) |
JP (1) | JP5900756B2 (ja) |
CN (1) | CN104883143B (ja) |
Families Citing this family (8)
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JP5900756B2 (ja) * | 2014-02-28 | 2016-04-06 | 株式会社村田製作所 | 電力増幅モジュール |
JP6216753B2 (ja) * | 2014-09-16 | 2017-10-18 | スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. | バンドローディングを低減するマルチバンドデバイス |
US9685907B2 (en) | 2015-06-30 | 2017-06-20 | Texas Instruments Incorporated | Variable gain power amplifiers |
US20170099036A1 (en) * | 2015-10-06 | 2017-04-06 | Ferfics Limited | Rf front end architectures |
US10965261B2 (en) * | 2017-12-05 | 2021-03-30 | Qualcomm Incorporated | Power amplifier circuit |
CN110234049B (zh) * | 2018-03-05 | 2021-09-24 | 重庆川水渔农智能科技有限公司 | 一种驱动电路 |
KR102480672B1 (ko) | 2018-06-11 | 2022-12-27 | 가부시키가이샤 무라타 세이사쿠쇼 | 고주파 모듈 및 통신 장치 |
CN111565057B (zh) * | 2020-06-23 | 2020-10-30 | 锐石创芯(深圳)科技有限公司 | 一种射频前端模块、天线装置及通信终端 |
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CN103490733B (zh) * | 2013-09-26 | 2016-06-08 | 华东交通大学 | 一种频率比1.25至2.85的双频带Doherty功率放大器 |
JP5900756B2 (ja) * | 2014-02-28 | 2016-04-06 | 株式会社村田製作所 | 電力増幅モジュール |
-
2014
- 2014-02-28 JP JP2014038745A patent/JP5900756B2/ja active Active
-
2015
- 2015-02-12 US US14/620,968 patent/US9397710B2/en active Active
- 2015-02-28 CN CN201510090710.2A patent/CN104883143B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
JP2015162875A (ja) | 2015-09-07 |
CN104883143A (zh) | 2015-09-02 |
US20150249433A1 (en) | 2015-09-03 |
CN104883143B (zh) | 2019-01-22 |
US9397710B2 (en) | 2016-07-19 |
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