JP6755656B2 - 発光素子、発光素子アレイ及びそれを含む照明装置 - Google Patents
発光素子、発光素子アレイ及びそれを含む照明装置 Download PDFInfo
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Description
120 発光構造物
122 第1導電型半導体層
124 活性層
126 第2導電型半導体層
130 導電層
142 第1電極
142a 第1電極線
146 第2電極
146a 第2電極線
146b 外部接続電極線
150 絶縁層
200 回路基板
210 レジン層
300 スマートウォッチ
310 発光素子アレイ
Claims (19)
- 第1導電型半導体層、前記第1導電型半導体層上の活性層及び前記活性層上の第2導電型半導体層を含む発光構造物と、
前記第1導電型半導体層と電気的に接触する第1電極と、
前記発光構造物の一部分及び前記第1電極の上に配置される絶縁層と、
前記第2導電型半導体層と電気的に接触する第2電極とを含み、
前記第1導電型半導体層は、第1メサ領域、前記第1メサ領域の下に位置し、前記第1メサ領域と第1段差を有する第2メサ領域、及び前記第2メサ領域の下に位置し、前記第2メサ領域と第2段差を有する第3メサ領域を含み、
前記第1電極は、前記第2メサ領域の上面及び側面に形成される第1領域、及び前記第3メサ領域の上面に形成される第2領域を含み、
前記第1電極の前記第2領域と接続されるように、前記第3メサ領域の前記上面には、第1方向に延びる第1電極線が形成され、
前記絶縁層上には、前記第2電極と接続される第2電極線が形成される、発光素子。 - 前記第2電極線は第2方向に延び、前記第1方向と前記第2方向は互いに垂直である、請求項1に記載の発光素子。
- 前記第1電極線と前記第2電極線は、前記第3メサ領域の前記上面上で互いに交差する、請求項1又は2に記載の発光素子。
- 前記第1電極及び前記第1電極線のそれぞれは多層構造を有し、
前記第2電極及び前記第2電極線のそれぞれは多層構造を有する、請求項1乃至3のいずれかに記載の発光素子。 - 前記第1電極線は、前記第1電極と同じ物質からなり、
前記第2電極線は、前記第2電極と同じ物質からなる、請求項1乃至4のいずれかに記載の発光素子。 - 前記第2電極線の幅は、前記第1メサ領域の幅に対して50%〜70%である、請求項1乃至5のいずれかに記載の発光素子。
- 回路基板と、
前記回路基板上に配置され、第1導電型半導体層と活性層及び第2導電型半導体層を含む発光構造物、前記第1導電型半導体層と電気的に接触する第1電極、及び前記第2導電型半導体層と電気的に接触する第2電極を含む、複数個の発光素子と、
前記発光構造物の一部分及び前記第1電極の上に配置される絶縁層と、
前記回路基板と前記複数個の発光素子との間に充填される絶縁性レジン層と、
前記複数個の発光素子のうち第1方向に隣接する発光素子の第1電極と電気的に接触する少なくとも1つ以上の第1電極線と、
前記複数個の発光素子のうち前記第1方向と交差する第2方向に隣接する発光素子の第2電極と電気的に接触する少なくとも1つ以上の第2電極線とを含み、
前記第1導電型半導体層は、第1メサ領域、前記第1メサ領域の下に位置し、前記第1メサ領域と第1段差を有する第2メサ領域、及び前記第2メサ領域の下に位置し、前記第2メサ領域と第2段差を有する第3メサ領域を含み、
前記第1電極は、前記第2メサ領域の上面及び側面に形成される第1領域、及び前記第3メサ領域の上面に形成される第2領域を含み、
前記少なくとも1つ以上の第1電極線は、前記第3メサ領域の前記上面に形成され、前記第1電極の前記第2領域と接続され、前記第1方向に延び、
前記少なくとも1つ以上の第2電極線は、前記第2電極と接続され、前記絶縁層上に形成される、発光素子アレイ。 - 前記少なくとも1つ以上の第1電極線の下面は、前記第1電極の前記第2領域の上面に接触する、請求項7に記載の発光素子アレイ。
- 前記少なくとも1つ以上の第2電極線は前記第2方向に延び、前記第1方向と前記第2方向は互いに垂直である、請求項7又は8に記載の発光素子アレイ。
- 前記第1電極線と前記第2電極線は、前記第3メサ領域の前記上面上で互いに交差する、請求項7乃至9のいずれかに記載の発光素子アレイ。
- 前記絶縁層はDBR(DISTRIBUTED BRAGG REFLECTOR)構造で設けられる、請求項7乃至10のいずれかに記載の発光素子アレイ。
- 前記絶縁層は、SiO2、Si3N4またはポリイミド化合物のうち少なくとも1つを含む、請求項7乃至11のいずれかに記載の発光素子アレイ。
- 前記第1電極は、オーミック層、反射層及び結合層を含む、請求項7乃至12のいずれかに記載の発光素子アレイ。
- 前記第2電極は、オーミック層及び反射層を含む、請求項7乃至13のいずれかに記載の発光素子アレイ。
- 前記少なくとも1つ以上の第1電極線の第1面は前記絶縁層と接触し、
前記第1面と対向する前記少なくとも1つ以上の第1電極線の第2面は露出される、請求項7乃至14のいずれかに記載の発光素子アレイ。 - 前記少なくとも1つ以上の第2電極線の第1面は前記絶縁性レジン層で露出され、
前記第1面と対向する前記少なくとも1つ以上の第2電極線の第2面は前記絶縁層と接触する、請求項7乃至15のいずれかに記載の発光素子アレイ。 - 前記複数個の発光素子のそれぞれは、前記第2導電型半導体層上に配置される導電層をさらに含み、
前記第2導電型半導体層及び前記導電層は前記第1メサ領域上に配置され、
前記第2電極は前記導電層上に配置される、請求項7乃至16のいずれかに記載の発光素子アレイ。 - 前記少なくとも1つ以上の第1電極線は、前記第1方向に対して所定の角度傾斜するように配置される、請求項7乃至17のいずれかに記載の発光素子アレイ。
- 請求項7乃至18のいずれかに記載の発光素子アレイと、
前記発光素子アレイで励起される光の経路を変更する光学部材と、を含む、照明装置。
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KR10-2014-0190407 | 2014-12-26 | ||
KR1020140190407A KR102322842B1 (ko) | 2014-12-26 | 2014-12-26 | 발광 소자 어레이 |
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JP2016127289A JP2016127289A (ja) | 2016-07-11 |
JP2016127289A5 JP2016127289A5 (ja) | 2019-02-07 |
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CN107731864B (zh) * | 2017-11-20 | 2020-06-12 | 开发晶照明(厦门)有限公司 | 微发光二极管显示器和制作方法 |
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KR102322842B1 (ko) | 2021-11-08 |
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