WO2008060053A1 - Micro-sized semiconductor light-emitting diode having emitting layer including silicon nano-dot, semiconductor light-emitting diode array including the micro-sized semiconductor light-emitting diode, and method of fabricating the micro-sized semiconductor light-emitting diode - Google Patents
Micro-sized semiconductor light-emitting diode having emitting layer including silicon nano-dot, semiconductor light-emitting diode array including the micro-sized semiconductor light-emitting diode, and method of fabricating the micro-sized semiconductor light-emitting diode Download PDFInfo
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- WO2008060053A1 WO2008060053A1 PCT/KR2007/005469 KR2007005469W WO2008060053A1 WO 2008060053 A1 WO2008060053 A1 WO 2008060053A1 KR 2007005469 W KR2007005469 W KR 2007005469W WO 2008060053 A1 WO2008060053 A1 WO 2008060053A1
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- Prior art keywords
- layer
- semiconductor light
- emitting diode
- injecting layer
- micro
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 119
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 54
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 54
- 239000010703 silicon Substances 0.000 title claims abstract description 54
- 239000002096 quantum dot Substances 0.000 title claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000000463 material Substances 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 29
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 22
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 22
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 8
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 239000010409 thin film Substances 0.000 description 26
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 239000010931 gold Substances 0.000 description 12
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 238000004549 pulsed laser deposition Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000003491 array Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000011707 mineral Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000033772 system development Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
Definitions
- the present invention relates to a micro-sized semiconductor light-emitting diode, a semiconductor light-emitting diode array including the micro-sized semiconductor light-emitting diode, and a method of fabricating the micro-sized semiconductor light- emitting diode.
- a conventional semiconductor light-emitting diode has been used in a displaying device.
- the conventional semiconductor light-emitting diode is manufactured by using a GaAs-based and GaN-based compound semiconductor thin film.
- the compound semiconductor thin film used in the conventional semiconductor light-emitting diode is grown on a nonsilicon-based substrate, the conventional semiconductor light-emitting diode is integrated or connected with difficulty to a silicon electronic device that is used for driving a displaying device.
- GaAs-based and GaN-based compound semiconductor thin film has horizontal and vertical lengths of about 300 ⁇ m . Disclosure of Invention Technical Solution
- the present invention provides a micro-sized semiconductor light-emitting diode that is manufactured at low manufacturing costs and is advantageous for integrating or connecting it to a silicon electronic device.
- the present invention also provides a semiconductor light-emitting diode array in which a plurality of micro-sized semiconductor light-emitting diodes (unit semiconductor light-emitting diodes) are arranged in a plurality of rows and a plurality of columns.
- the present invention also provides a method of fabricating the micro-sized semiconductor light-emitting diode.
- a micro-sized semiconductor light-emitting diode including: an emission material layer formed on a silicon substrate, and including a silicon nano-dot; a hole injecting layer and an electron injecting layer that face each other, wherein the hole injecting layer and an electron injecting layer are formed between the emission material layer; a transparent conductive electrode layer formed on the electron injecting layer; and a first electrode and a second electrode that respectively inject a current in the hole injecting layer and the transparent conductive electrode layer from the outside.
- the emission material layer may comprise an amorphous silicon nitride (SiN) layer.
- the hole injecting layer and the electron injecting layer may include a p-type silicon carbide -based material layer and a n-type silicon carbide-based material layer, respectively.
- the hole injecting layer may be formed on the silicon substrate, the emission material layer may be formed on the hole injecting layer, and the electron injecting layer may be formed on the emission material layer.
- a semiconductor light-emitting diode array comprising a plurality of unit semiconductor light-emitting diodes that are arranged in a plurality of row and a plurality of columns, wherein each of the unit semiconductor light-emitting diodes may include: an emission material layer formed on a silicon substrate, and including a silicon nano-dot; a hole injecting layer and an electron injecting layer that face each other, wherein the hole injecting layer and an electron injecting layer are formed between the emission material layer; a transparent conductive electrode layer formed on the electron injecting layer; and a first electrode and a second electrode that respectively inject to the hole injecting layer and the transparent conductive electrode layer from the outside, and wherein each of the unit semiconductor light-emitting diodes controls light emission by using the first electrode and the second electrode.
- a method of fabricating a micro- sized semiconductor light-emitting diode including: forming an emission material layer including a silicon nano-dot on a silicon substrate; forming a hole injecting layer and an electron injecting layer to face each other, wherein the hole injecting layer and the electron injecting layer are formed between the emission material layer; forming a transparent conductive electrode layer on the electron injecting layer; and forming a first electrode and a second electrode that respectively inject a current in the hole injecting layer and the transparent conductive electrode layer from the outside.
- the emission material layer may include an amorphous silicon nitride (SiN) layer.
- the hole injecting layer may be formed by forming a p-type silicon carbide-based material layer on the silicon substrate, and the electron injecting layer is formed by forming an n-type silicon carbide-based material layer on the emission material layer.
- the method may further include: after forming the transparent conductive electrode layer, heat-treating the transparent conductive electrode layer at a temperature between an ambient temperature and 1000 0 C.
- the semiconductor light-emitting diode array according to the present invention can control to emit the respective micro semiconductor light-emitting diodes by using first and second electrodes that are formed between a hole injection layer and a transparent conductive electrode layer.
- the semiconductor light-emitting diode array is formed on the silicon substrate, it is easy configure a circuit unit that can control the respective semiconductor light- emitting diodes on the silicon substrate. Accordingly, the semiconductor light-emitting diode array can be manufactured at low manufacturing costs, and the semiconductor light-emitting diode array can be used in an indoor and outdoor mini display that can be manufactured using a simple method.
- FIG. 1 is a cross-sectional view of the micro-sized semiconductor light-emitting diode according to an embodiment of the present invention
- FIG. 2 is a flow chart of a method of fabricating the micro-sized semiconductor light- emitting diode of FIG. 1, according to an embodiment of the present invention
- FIG. 3 is a plan view of a semiconductor light-emitting diode array in which a plurality of micro-sized semiconductor light-emitting diodes are arranged, according to an embodiment of the present invention
- FIG. 4 is an optical ⁇ nicroscopic image of the semiconductor light-emitting diode array of FIG. 3;
- FIG. 5 is a graph illustrating the electrical properties of semiconductor light-emitting diode arrays according to embodiments of the present invention.
- FIG. 6 is an optical microscopic image of electrical emission of the semiconductor light-emitting diode of FIGS. 3 and 4. Mode for the Invention
- a micro-sized semiconductor light-emitting diode means a semiconductor light-emitting diode of a size of one hundred micrometers (100 /M ) or less. That is, each of the horizontal and vertical lengths of a micro-sized semiconductor light-emitting diode 200 is one hundred micrometers (100 ⁇ m ) or less, preferably, 5 to 20 ⁇ m .
- FIG. 1 is a cross-sectional view of the micro-sized semiconductor light-emitting diode according to an embodiment of the present invention.
- the micro-sized semiconductor light-emitting diode 200 is configured using a silicon substrate 100.
- the micro-sized semiconductor light-emitting diode 200 is advantageous for integrating or connecting it to a silicon electronic device.
- the silicon substrate 100 is used in the micro-sized semiconductor light-emitting diode 200, the cost of the silicon substrate 100 is reduced, and the cost of a source gas for forming layers on the silicon substrate 100 is reduced. Accordingly, the manufacturing costs of the micro- sized semiconductor light-emitting diode 200 are reduced.
- the micro-sized semiconductor light-emitting diode 200 also includes a first insulating layer 102 formed on a silicon substrate 100.
- the first insulating layer 102 includes a silicon oxide layer.
- a hole injecting layer 104 is formed on the first insulating layer 102.
- the hole injecting layer 104 includes a p-type silicon layer, for example, a p-type silicon carbide-based thin film.
- An emission material layer 106 is formed on the hole injecting layer 104.
- the emission material layer 106 includes a thin film having silicon nano-dots.
- the emission material layer 106 includes a silicon nitride (SiN) layer including the silicon nano-dots.
- SiN silicon nitride
- a first electrode 108 (i.e., a p-type electrode) for supplying a current to the hole injecting layer 104 is formed on one side of the hole injecting layer 104.
- the first electrode 108 is formed of a conductive metal material such as nickel (M), aluminun (Al), platinun (Pt) or gold (Au).
- An electron injecting layer 110 is formed on the emission material layer 106.
- the electron injecting layer 110 includes an n-type silicon layer, for example, an n-type silicon carbide-based thin film.
- An example of the silicon carbide-based thin film constituting the hole injecting layer 104 or the electron injecting layer 110 includes SiC or SiCN thin film.
- the hole injecting layer 104 and the electron injecting layer 110 face each other, wherein the emission material layer 106 is formed between the hole injecting layer 104 and the electron injecting layer 110.
- a transparent conductive electrode layer 112 is formed on the electron injecting layer
- the transparent conductive electrode layer 112 includes a thin film formed of any one selected from the group consisting of indium tin oxide (ITO), SnO , In O , Cd SnO
- the second insulating layer 114 having a hole 116 exposing a part of a
- the second insulating layer 114 includes a silicon oxide layer.
- the second electrode 118 i.e., an n-type electrode
- supplying a current to the transparent conductive electrode layer 112 is formed in the hole 116.
- the second electrode 118 is formed of a conductive metal material such as nickel (M), aluminun (Al), platinun (Pt) or gold (Au).
- M nickel
- Al aluminun
- Pt platinun
- Au gold
- the micro-sized semiconductor light-emitting diode 200 can emit light by injecting a current through the first electrode 108 and the second electrode 118 into the hole injecting layer 104 and the transparent conductive electrode layer 112 to thereby inject holes and electrons into the emission material layer 106.
- FIG. 2 is a flow chart of a method of fabricating the micro-sized semiconductor light- emitting diode of FIG. 1, according to an embodiment of the present invention.
- the first insulating layer 102 is formed on the silicon substrate 100 (step 130).
- the first insulating layer 102 is formed by using plasma enhanced chemical vapor deposition (PECVD), that is, by depositing a silicon oxide layer.
- PECVD plasma enhanced chemical vapor deposition
- the hole injecting layer 104 is deposited on the first insulating layer 102 (step 132).
- the hole injecting layer 104 is formed using a method in which a p-type silicon layer (e.g., p-type silicon carbide-based thin film) is formed using PECVD.
- the hole injecting layer 104 is formed using a method in which the p-type silicon layer is formed, and then patterned.
- An example of the p-type silicon carbide-based thin film is SiC or SiCN thin film.
- the p-type silicon carbide-based thin film used as the hole injecting layer 104 is formed to a thickness of 1 A or more.
- the emission material layer 106 is formed on the hole injecting layer 104 (step 134).
- the emission material layer 106 includes a thin film including silicon nano-dots.
- the emission material layer 106 includes a silicon nitride (SiN) layer having the silicon nano-dots, and is formed to a thickness of 40 nm.
- An amorphous silicon nitride layer including the silicon nano-dots, which constitutes the emission material layer 106, is deposited using PECVD.
- the amorphous silicon nitride layer is formed using a method in which 10 % aropn-diluted silane and ammonia NH are used as a growth
- the temperature of the silicon substrate 100 is 250 0 C
- the pressure of a chamber is 0.5 Torr
- RF plasma power is 5 W.
- the electron injecting layer 110 is formed on the emission material layer 106 (step 1)
- the electron injecting layer 110 includes an n-type silicon layer, for example, an n-type carbide-based thin film.
- An example of the n-type silicon carbide-based thin film is SiC or SiCN thin film. It is sufficient that the n-type silicon carbide-based thin film used as the electron injecting layer 110 be formed to a thickness of 1 A or more.
- the electron injecting layer 110 includes an n-type silicon carbide-based (SiQ thin film, and is formed to a thickness of 10 nm by using PECVD.
- the n-type silicon carbide-based thin film is formed using a method in which 10 % argon-diluted silane and methane (CH ) are used as growth
- TMP try ⁇ nethyl-phosphite
- metalorganic source RF plasma power
- the transparent conductive electrode layer 112 is formed on the electron injecting layer 110 (step 138).
- the transparent conductive electrode layer 112 includes a thin film formed of any one selected from the group consisting of indiun tin oxide (ITO), SnO , In O , Cd SnO and ZnO. It is sufficient that the transparent conductive
- the transparent conductive electrode layer 112 be formed to a thickness of 1 A or more.
- the transparent conductive electrode layer 112 is formed by using an ITO layer with a thickness of 100 nm by using pulsed laser deposition (PLD).
- PLD pulsed laser deposition
- the transparent conductive electrode layer 112 is heat-treated at a temperature between an ambient temperature and 1000 0 C for 10 seconds through 1 hour to thereby form an ohmic contact between the electron injecting layer 110 (i.e., an n-type silicon carbide (SiQ layer) and the transparent conductive electrode layer 112 (i.e., an ITO layer) (step 140).
- the electron injecting layer 110 i.e., an n-type silicon carbide (SiQ layer
- the transparent conductive electrode layer 112 i.e., an ITO layer
- the emission material layer 106, the electron injecting layer 110 and the transparent conductive electrode layer 112 are formed using photolithography and a etching method after an amorphous silicon nitride layer including the silicon nano-dots, an n- type silicon carbide (SiQ layer, and an ITO layer are formed.
- the first electrode 108 supplying a current to the hole injecting layer 104 is formed on one side of the hole injecting layer 104 (step 142).
- the first electrode 108 is formed of a conductive metal material such as nickel (M), aluminun (Al), platinun (Pt) or gold (Au).
- the first electrode 108 is formed of nickel (M) and gold (Au) with respective thicknesses of 30 nm and 150 nm by using thermal evaporation.
- the second insulating layer 114 having a hole 116 exposing a part of a surface of the transparent conductive electrode layer 112 is formed on the transparent conductive electrode layer 112, the first electrode 108, and the hole injecting layer 104 (step 144).
- the second insulating layer 114 is formed using PECVD, that is, by depositing a silicon oxide layer.
- the second electrode 118 supplying a current to the transparent conductive electrode layer 112 is formed in the hole 116 (step 146).
- the second electrode 118 is formed of a conductive metal material such as nickel (M), aluminun (Al), platinun (Pt) or gold (Au).
- the second electrode 118 is formed of nickel (M) and gold (Au) with respective thicknesses of 30 nm and 150 nm by using thermal evaporation.
- the first insulating layer 102, the hole injecting layer 104, the emission material layer 106, the electron injecting layer 110 and the second insulating layer 114 are formed by using chemical vapor deposition such as PECVD in the current embodiment of the present invention; however, the present invention is not limited to the method. That is, the first insulating layer 102, the hole injecting layer 104, the emission material layer 106, the electron injecting layer 110 and the second insulating layer 114 are formed by using a known method such as physical vapor deposition.
- FIG. 3 is a plan view of a semiconductor light-emitting diode array in which a plurality of the micro-sized semiconductor light-emitting diodes are arranged, according to an embodiment of the present invention.
- FIG. 4 is an optical ⁇ nicroscopic image of the semiconductor light-emitting diode array of FIG. 3.
- the semiconductor light-emitting diode array 300 is illustrated to have the micro-sized semiconductor light-emitting diodes 200 arranged in eight rows and eight colunns.
- the semiconductor light-emitting diode array 300 may be formed to have the micro-sized semiconductor light-emitting diodes 200 arranged in at least two rows and at least two columns.
- the semiconductor light-emitting diode array 300 is illustrated to have the micro- sized semiconductor light-emitting diodes 200 in a plurality of rows and a plurality of colunns.
- the micro-sized semiconductor light-emitting diodes 200 are each configured to have horizontal and vertical lengths of 100 ⁇ m or less, preferably, 5 to 20 ⁇ m .
- the semiconductor light-emitting diode array 300 can be used in a micro- mini display.
- the hole injecting layer 104 of each of the micro- sized semiconductor light-emitting diodes 200 is connected to a first electrode line 108 (i.e., the first electrode), and the transparent conductive electrode layer 112 of each of the micro-sized semiconductor light-emitting diodes 200 is connected to a second electrode line 118 (i.e., the second electrode).
- the semiconductor light-emitting diode array 300 can control light emission of the respective micro-sized semiconductor light-emitting diodes 200 by using the first electrode line 108 and the second electrode line 118.
- the semiconductor light-emitting diode array 300 is formed on the silicon substrate 100, it is easy to configure a circuit unit that can control the respective semiconductor light-emitting diodes 200 on the silicon substrate 100. Accordingly, the semiconductor light-emitting diode array 300 can be manufactured at low manufacturing costs, and can be used in an indoor and outdoor mini- display that can be manufactured using a simple method.
- FIG. 5 is a graph illustrating the electrical properties of semiconductor light-emitting diode arrays, according to embodiments of the present invention.
- FIG. 5 currents are measured with respect to voltages that are respectively applied to the semiconductor light-emitting diode arrays that respectively include 8, 16, 24, 32 and 64 micro-sized semiconductor light-emitting diodes.
- reference minerals a, b, c, d, and e mean curves for 8, 16, 24, 32 and 64 micro-sized semiconductor light-emitting diodes, respectively.
- FIG. 5 it can be seen that the more the micro-sized semiconductor light-emitting diodes, the greater a current with respect to the same voltage.
- the number of the micro-sized semiconductor light-emitting diodes is 64, a current is remarkably increased at a low voltage.
- FIG. 6 is an optical microscopic image of electrical emission of the semiconductor light-emitting diode 300 of FIGS. 3 and 4.
- FIG. 6 is an optical microscopic image of electrical emission measured when a voltage of 15 V is applied to the semiconductor light-emitting diode array 300. As illustrated in FIG. 6, it can be seen that the 64 micro-sized semiconductor light- emitting diodes 200 electrically-emit light regularly.
- a micro-sized semiconductor light-emitting diode according to the present invention is configured using a silicon substrate, the micro- sized semiconductor light-emitting diode is advantageous for integrating or connecting it to a silicon electronic device, and the manufacturing costs are reduced.
- a n emission material layer includes a thin film including silicon nano-dots, and thus t he m icro-sized semiconductor light-emitting diode can improve luminous efficiency.
- the micro-sized semiconductor light-emitting diode has a size of several through several tens of micrometers, the micro- sized semiconductor light-emitting diode can be used in a micro ⁇ nini display.
- the semiconductor light-emitting diode array according to the present invention can control to emit the respective micro semiconductor light-emitting diodes by using first and second electrodes that are formed between a hole injection layer and a transparent conductive electrode layer.
- the semiconductor light-emitting diode array is formed on the silicon substrate, it is easy configure a circuit unit that can control the respective semiconductor light- emitting diodes on the silicon substrate. Accordingly, the semiconductor light-emitting diode array can be manufactured at low manufacturing costs, and the semiconductor light-emitting diode array can be used in an indoor and outdoor mini display that can be manufactured using a simple method.
- the present invention provides a micro-sized semiconductor light-emitting diode, a semiconductor light-emitting diode array including the micro-sized semiconductor light-emitting diode, and a method of fabricating the micro-sized semiconductor light- emitting diode.
Abstract
A micro-sized semiconductor light-emitting diode includes an emission material layer formed on a silicon substrate, and including a silicon nano-dot; a hole injecting layer and an electron injecting layer that face each other, wherein the hole injecting layer and an electron injecting layer are formed between the emission material layer; a transparent conductive electrode layer formed on the electron injecting layer; and a first electrode and a second electrode that respectively inject a current in the hole injecting layer and the transparent conductive electrode layer from the outside.
Description
Description
MICRO-SIZED SEMICONDUCTOR LIGHT-EMITTING DIODE HAVING EMITTING LAYER INCLUDING SILICON NANO-DOT, SEMICONDUCTOR LIGHT- EMITTING DIODE ARRAY INCLUDING THE MICRO- SIZED SEMICONDUCTOR LIGHT-EMITTING DIODE, AND METHOD OF FABRICATING THE MICRO-SIZED SEMICONDUCTOR LIGHT-EMITTING DIODE Technical Field
[1] The present invention relates to a micro-sized semiconductor light-emitting diode, a semiconductor light-emitting diode array including the micro-sized semiconductor light-emitting diode, and a method of fabricating the micro-sized semiconductor light- emitting diode. This work was supported by the IT R&D program of MIC/IITA. [2006-S007-01, Ubiquitous Health Monitoring Module and System Development] Background Art
[2] A conventional semiconductor light-emitting diode has been used in a displaying device. The conventional semiconductor light-emitting diode is manufactured by using a GaAs-based and GaN-based compound semiconductor thin film.
[3] When the semiconductor light-emitting diode is manufactured using the GaAs-based and GaN-based compound semiconductor thin film, it is difficult to grow a compound semiconductor thin film having satisfactory quality, and the cost of a substrate or the cost of a gas source for growing the compound semiconductor thin film are high. Accordingly, the manufacturing costs of the conventional semiconductor light-emitting diode are high.
[4] In addition, since the compound semiconductor thin film used in the conventional semiconductor light-emitting diode is grown on a nonsilicon-based substrate, the conventional semiconductor light-emitting diode is integrated or connected with difficulty to a silicon electronic device that is used for driving a displaying device.
[5] In addition, the semiconductor light-emitting diode manufactured including the
GaAs-based and GaN-based compound semiconductor thin film has horizontal and vertical lengths of about 300 μm . Disclosure of Invention
Technical Solution
[6] The present invention provides a micro-sized semiconductor light-emitting diode that is manufactured at low manufacturing costs and is advantageous for integrating or connecting it to a silicon electronic device.
[7] The present invention also provides a semiconductor light-emitting diode array in which a plurality of micro-sized semiconductor light-emitting diodes (unit semiconductor light-emitting diodes) are arranged in a plurality of rows and a plurality of columns.
[8] The present invention also provides a method of fabricating the micro-sized semiconductor light-emitting diode.
[9] According to an aspect of the present invention, there is provided a micro-sized semiconductor light-emitting diode including: an emission material layer formed on a silicon substrate, and including a silicon nano-dot; a hole injecting layer and an electron injecting layer that face each other, wherein the hole injecting layer and an electron injecting layer are formed between the emission material layer; a transparent conductive electrode layer formed on the electron injecting layer; and a first electrode and a second electrode that respectively inject a current in the hole injecting layer and the transparent conductive electrode layer from the outside.
[10] The emission material layer may comprise an amorphous silicon nitride (SiN) layer.
The hole injecting layer and the electron injecting layer may include a p-type silicon carbide -based material layer and a n-type silicon carbide-based material layer, respectively. The hole injecting layer may be formed on the silicon substrate, the emission material layer may be formed on the hole injecting layer, and the electron injecting layer may be formed on the emission material layer.
[11] According to another aspect of the present invention, there is provided a semiconductor light-emitting diode array comprising a plurality of unit semiconductor light-emitting diodes that are arranged in a plurality of row and a plurality of columns, wherein each of the unit semiconductor light-emitting diodes may include: an emission material layer formed on a silicon substrate, and including a silicon nano-dot; a hole injecting layer and an electron injecting layer that face each other, wherein the hole injecting layer and an electron injecting layer are formed between the emission material layer; a transparent conductive electrode layer formed on the electron injecting layer; and a first electrode and a second electrode that respectively inject to the hole injecting layer and the transparent conductive electrode layer from the outside, and wherein each of the unit semiconductor light-emitting diodes controls light
emission by using the first electrode and the second electrode.
[12] According to another aspect of the present invention, there is provided a method of fabricating a micro- sized semiconductor light-emitting diode, the method including: forming an emission material layer including a silicon nano-dot on a silicon substrate; forming a hole injecting layer and an electron injecting layer to face each other, wherein the hole injecting layer and the electron injecting layer are formed between the emission material layer; forming a transparent conductive electrode layer on the electron injecting layer; and forming a first electrode and a second electrode that respectively inject a current in the hole injecting layer and the transparent conductive electrode layer from the outside.
[13] The emission material layer may include an amorphous silicon nitride (SiN) layer.
The hole injecting layer may be formed by forming a p-type silicon carbide-based material layer on the silicon substrate, and the electron injecting layer is formed by forming an n-type silicon carbide-based material layer on the emission material layer. The method may further include: after forming the transparent conductive electrode layer, heat-treating the transparent conductive electrode layer at a temperature between an ambient temperature and 1000 0C.
Advantageous Effects
[14] The semiconductor light-emitting diode array according to the present invention can control to emit the respective micro semiconductor light-emitting diodes by using first and second electrodes that are formed between a hole injection layer and a transparent conductive electrode layer.
[15] Since the semiconductor light-emitting diode array is formed on the silicon substrate, it is easy configure a circuit unit that can control the respective semiconductor light- emitting diodes on the silicon substrate. Accordingly, the semiconductor light-emitting diode array can be manufactured at low manufacturing costs, and the semiconductor light-emitting diode array can be used in an indoor and outdoor mini display that can be manufactured using a simple method. Brief Description of the Drawings
[16] The above and other features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings in which:
[17] FIG. 1 is a cross-sectional view of the micro-sized semiconductor light-emitting diode according to an embodiment of the present invention;
[18] FIG. 2 is a flow chart of a method of fabricating the micro-sized semiconductor light- emitting diode of FIG. 1, according to an embodiment of the present invention;
[19] FIG. 3 is a plan view of a semiconductor light-emitting diode array in which a plurality of micro-sized semiconductor light-emitting diodes are arranged, according to an embodiment of the present invention;
[20] FIG. 4 is an optical^nicroscopic image of the semiconductor light-emitting diode array of FIG. 3;
[21] FIG. 5 is a graph illustrating the electrical properties of semiconductor light-emitting diode arrays according to embodiments of the present invention; and
[22] FIG. 6 is an optical microscopic image of electrical emission of the semiconductor light-emitting diode of FIGS. 3 and 4. Mode for the Invention
[23] The present invention will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. The invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, the thickness of layers and region are exaggerated for clarity.
[24] Throughout this specification, a micro-sized semiconductor light-emitting diode means a semiconductor light-emitting diode of a size of one hundred micrometers (100 /M ) or less. That is, each of the horizontal and vertical lengths of a micro-sized semiconductor light-emitting diode 200 is one hundred micrometers (100 μm ) or less, preferably, 5 to 20 μm .
[25] FIG. 1 is a cross-sectional view of the micro-sized semiconductor light-emitting diode according to an embodiment of the present invention.
[26] Referring to FIG. 1, the micro-sized semiconductor light-emitting diode 200 is configured using a silicon substrate 100. When the silicon substrate 100 is used, the micro-sized semiconductor light-emitting diode 200 is advantageous for integrating or connecting it to a silicon electronic device. In addition, since the silicon substrate 100 is used in the micro-sized semiconductor light-emitting diode 200, the cost of the silicon substrate 100 is reduced, and the cost of a source gas for forming layers on the silicon substrate 100 is reduced. Accordingly, the manufacturing costs of the micro- sized semiconductor light-emitting diode 200 are reduced.
[27] The micro-sized semiconductor light-emitting diode 200 also includes a first
insulating layer 102 formed on a silicon substrate 100. The first insulating layer 102 includes a silicon oxide layer. A hole injecting layer 104 is formed on the first insulating layer 102. The hole injecting layer 104 includes a p-type silicon layer, for example, a p-type silicon carbide-based thin film. An emission material layer 106 is formed on the hole injecting layer 104. The emission material layer 106 includes a thin film having silicon nano-dots. The emission material layer 106 includes a silicon nitride (SiN) layer including the silicon nano-dots. When a thin film including the silicon nano-dots is used as the emission material layer 106, the luninous efficiency of the micro-sized semiconductor light-emitting diode 200 can be improved.
[28] A first electrode 108 (i.e., a p-type electrode) for supplying a current to the hole injecting layer 104 is formed on one side of the hole injecting layer 104. The first electrode 108 is formed of a conductive metal material such as nickel (M), aluminun (Al), platinun (Pt) or gold (Au). An electron injecting layer 110 is formed on the emission material layer 106. The electron injecting layer 110 includes an n-type silicon layer, for example, an n-type silicon carbide-based thin film. An example of the silicon carbide-based thin film constituting the hole injecting layer 104 or the electron injecting layer 110 includes SiC or SiCN thin film. The hole injecting layer 104 and the electron injecting layer 110 face each other, wherein the emission material layer 106 is formed between the hole injecting layer 104 and the electron injecting layer 110.
[29] A transparent conductive electrode layer 112 is formed on the electron injecting layer
110. The transparent conductive electrode layer 112 includes a thin film formed of any one selected from the group consisting of indium tin oxide (ITO), SnO , In O , Cd SnO
2 2 3 2 and ZnO. The second insulating layer 114 having a hole 116 exposing a part of a
4 surface of the transparent conductive electrode layer 112 is formed on the transparent conductive electrode layer 112, the first electrode 108, and the hole injecting layer 104. The second insulating layer 114 includes a silicon oxide layer. The second electrode 118 (i.e., an n-type electrode) supplying a current to the transparent conductive electrode layer 112 is formed in the hole 116. The second electrode 118 is formed of a conductive metal material such as nickel (M), aluminun (Al), platinun (Pt) or gold (Au). [30] In the micro-sized semiconductor light-emitting diode 200, the hole injecting layer
104 and the electron injecting layer 110 face each other, wherein the emission material layer 106 is formed between the hole injecting layer 104 and the electron injecting layer 110. The micro-sized semiconductor light-emitting diode 200 can emit light by
injecting a current through the first electrode 108 and the second electrode 118 into the hole injecting layer 104 and the transparent conductive electrode layer 112 to thereby inject holes and electrons into the emission material layer 106.
[31] FIG. 2 is a flow chart of a method of fabricating the micro-sized semiconductor light- emitting diode of FIG. 1, according to an embodiment of the present invention.
[32] Referring to FIG. 2, the method of fabricating the micro-sized semiconductor light- emitting diode 200 will be described with reference to FIGS. 1 and 2. The same reference minerals in FIGS. 1 and 2 denote the same elements. The first insulating layer 102 is formed on the silicon substrate 100 (step 130). The first insulating layer 102 is formed by using plasma enhanced chemical vapor deposition (PECVD), that is, by depositing a silicon oxide layer.
[33] The hole injecting layer 104 is deposited on the first insulating layer 102 (step 132).
The hole injecting layer 104 is formed using a method in which a p-type silicon layer (e.g., p-type silicon carbide-based thin film) is formed using PECVD. The hole injecting layer 104 is formed using a method in which the p-type silicon layer is formed, and then patterned. An example of the p-type silicon carbide-based thin film is SiC or SiCN thin film. The p-type silicon carbide-based thin film used as the hole injecting layer 104 is formed to a thickness of 1 A or more.
[34] The emission material layer 106 is formed on the hole injecting layer 104 (step 134).
The emission material layer 106 includes a thin film including silicon nano-dots. The emission material layer 106 includes a silicon nitride (SiN) layer having the silicon nano-dots, and is formed to a thickness of 40 nm. An amorphous silicon nitride layer including the silicon nano-dots, which constitutes the emission material layer 106, is deposited using PECVD. The amorphous silicon nitride layer is formed using a method in which 10 % aropn-diluted silane and ammonia NH are used as a growth
3 gas, the temperature of the silicon substrate 100 is 250 0C, the pressure of a chamber is 0.5 Torr, and RF plasma power is 5 W.
[35] The electron injecting layer 110 is formed on the emission material layer 106 (step
136). Thus, the hole injecting layer 104 and the electron injecting layer 110 face each other, wherein the emission material layer 106 is formed between the hole injecting layer 104 and the electron injecting layer 110. The electron injecting layer 110 includes an n-type silicon layer, for example, an n-type carbide-based thin film. An example of the n-type silicon carbide-based thin film is SiC or SiCN thin film. It is sufficient that the n-type silicon carbide-based thin film used as the electron injecting layer 110 be formed to a thickness of 1 A or more.
[36] In the current embodiment of the present invention, the electron injecting layer 110 includes an n-type silicon carbide-based (SiQ thin film, and is formed to a thickness of 10 nm by using PECVD. The n-type silicon carbide-based thin film is formed using a method in which 10 % argon-diluted silane and methane (CH ) are used as growth
4 gas, try^nethyl-phosphite (TMP) and metalorganic source are used as doping gas, the temperature of the silicon substrate 100 is 3000C, the pressure of a chamber is 0.2 Torr, and RF plasma power is 40 W.
[37] The transparent conductive electrode layer 112 is formed on the electron injecting layer 110 (step 138). The transparent conductive electrode layer 112 includes a thin film formed of any one selected from the group consisting of indiun tin oxide (ITO), SnO , In O , Cd SnO and ZnO. It is sufficient that the transparent conductive
2 2 3 2 4 electrode layer 112 be formed to a thickness of 1 A or more. In the current embodiment of the present invention, the transparent conductive electrode layer 112 is formed by using an ITO layer with a thickness of 100 nm by using pulsed laser deposition (PLD).
[38] In a PLD chamber, the transparent conductive electrode layer 112 is heat-treated at a temperature between an ambient temperature and 1000 0C for 10 seconds through 1 hour to thereby form an ohmic contact between the electron injecting layer 110 (i.e., an n-type silicon carbide (SiQ layer) and the transparent conductive electrode layer 112 (i.e., an ITO layer) (step 140). In the current embodiment of the present invention, in the PLD chamber, the transparent conductive electrode layer 112 is heat-treated at a temperature of 300 0C for 30 minutes.
[39] The emission material layer 106, the electron injecting layer 110 and the transparent conductive electrode layer 112 are formed using photolithography and a etching method after an amorphous silicon nitride layer including the silicon nano-dots, an n- type silicon carbide (SiQ layer, and an ITO layer are formed.
[40] The first electrode 108 supplying a current to the hole injecting layer 104 is formed on one side of the hole injecting layer 104 (step 142). The first electrode 108 is formed of a conductive metal material such as nickel (M), aluminun (Al), platinun (Pt) or gold (Au). In the current embodiment of the present invention, the first electrode 108 is formed of nickel (M) and gold (Au) with respective thicknesses of 30 nm and 150 nm by using thermal evaporation.
[41] The second insulating layer 114 having a hole 116 exposing a part of a surface of the transparent conductive electrode layer 112 is formed on the transparent conductive electrode layer 112, the first electrode 108, and the hole injecting layer 104 (step 144).
The second insulating layer 114 is formed using PECVD, that is, by depositing a silicon oxide layer.
[42] The second electrode 118 supplying a current to the transparent conductive electrode layer 112 is formed in the hole 116 (step 146). The second electrode 118 is formed of a conductive metal material such as nickel (M), aluminun (Al), platinun (Pt) or gold (Au). In the current embodiment of the present invention, the second electrode 118 is formed of nickel (M) and gold (Au) with respective thicknesses of 30 nm and 150 nm by using thermal evaporation.
[43] The first insulating layer 102, the hole injecting layer 104, the emission material layer 106, the electron injecting layer 110 and the second insulating layer 114 are formed by using chemical vapor deposition such as PECVD in the current embodiment of the present invention; however, the present invention is not limited to the method. That is, the first insulating layer 102, the hole injecting layer 104, the emission material layer 106, the electron injecting layer 110 and the second insulating layer 114 are formed by using a known method such as physical vapor deposition.
[44] FIG. 3 is a plan view of a semiconductor light-emitting diode array in which a plurality of the micro-sized semiconductor light-emitting diodes are arranged, according to an embodiment of the present invention. FIG. 4 is an optical^nicroscopic image of the semiconductor light-emitting diode array of FIG. 3.
[45] F or convenience of description, the semiconductor light-emitting diode array 300 is illustrated to have the micro-sized semiconductor light-emitting diodes 200 arranged in eight rows and eight colunns. Of course, the semiconductor light-emitting diode array 300 may be formed to have the micro-sized semiconductor light-emitting diodes 200 arranged in at least two rows and at least two columns.
[46] The semiconductor light-emitting diode array 300 is illustrated to have the micro- sized semiconductor light-emitting diodes 200 in a plurality of rows and a plurality of colunns. The micro-sized semiconductor light-emitting diodes 200 are each configured to have horizontal and vertical lengths of 100 μm or less, preferably, 5 to 20 μm . Thus, the semiconductor light-emitting diode array 300 can be used in a micro- mini display.
[47] As illustrated in FIGS. 3 and 4, the hole injecting layer 104 of each of the micro- sized semiconductor light-emitting diodes 200 is connected to a first electrode line 108 (i.e., the first electrode), and the transparent conductive electrode layer 112 of each of the micro-sized semiconductor light-emitting diodes 200 is connected to a second electrode line 118 (i.e., the second electrode). Thus, the semiconductor light-emitting
diode array 300 can control light emission of the respective micro-sized semiconductor light-emitting diodes 200 by using the first electrode line 108 and the second electrode line 118.
[48] As described above, since the semiconductor light-emitting diode array 300 is formed on the silicon substrate 100, it is easy to configure a circuit unit that can control the respective semiconductor light-emitting diodes 200 on the silicon substrate 100. Accordingly, the semiconductor light-emitting diode array 300 can be manufactured at low manufacturing costs, and can be used in an indoor and outdoor mini- display that can be manufactured using a simple method.
[49] FIG. 5 is a graph illustrating the electrical properties of semiconductor light-emitting diode arrays, according to embodiments of the present invention.
[50] Referring to FIG. 5, currents are measured with respect to voltages that are respectively applied to the semiconductor light-emitting diode arrays that respectively include 8, 16, 24, 32 and 64 micro-sized semiconductor light-emitting diodes. In FIG. 5, reference minerals a, b, c, d, and e mean curves for 8, 16, 24, 32 and 64 micro-sized semiconductor light-emitting diodes, respectively. As illustrated in FIG. 5, it can be seen that the more the micro-sized semiconductor light-emitting diodes, the greater a current with respect to the same voltage. In addition, it can be seen that when the number of the micro-sized semiconductor light-emitting diodes is 64, a current is remarkably increased at a low voltage.
[51] FIG. 6 is an optical microscopic image of electrical emission of the semiconductor light-emitting diode 300 of FIGS. 3 and 4.
[52] In particular, FIG. 6 is an optical microscopic image of electrical emission measured when a voltage of 15 V is applied to the semiconductor light-emitting diode array 300. As illustrated in FIG. 6, it can be seen that the 64 micro-sized semiconductor light- emitting diodes 200 electrically-emit light regularly.
[53] As described above, since a micro-sized semiconductor light-emitting diode according to the present invention is configured using a silicon substrate, the micro- sized semiconductor light-emitting diode is advantageous for integrating or connecting it to a silicon electronic device, and the manufacturing costs are reduced.
[54] A n emission material layer includes a thin film including silicon nano-dots, and thus t he m icro-sized semiconductor light-emitting diode can improve luminous efficiency.
[55] Since the micro-sized semiconductor light-emitting diode has a size of several through several tens of micrometers, the micro- sized semiconductor light-emitting diode can be used in a micro^nini display.
[56] The semiconductor light-emitting diode array according to the present invention can control to emit the respective micro semiconductor light-emitting diodes by using first and second electrodes that are formed between a hole injection layer and a transparent conductive electrode layer.
[57] Since the semiconductor light-emitting diode array is formed on the silicon substrate, it is easy configure a circuit unit that can control the respective semiconductor light- emitting diodes on the silicon substrate. Accordingly, the semiconductor light-emitting diode array can be manufactured at low manufacturing costs, and the semiconductor light-emitting diode array can be used in an indoor and outdoor mini display that can be manufactured using a simple method.
[58] While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by one of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims.
Industrial Applicability
[59] The present invention provides a micro-sized semiconductor light-emitting diode, a semiconductor light-emitting diode array including the micro-sized semiconductor light-emitting diode, and a method of fabricating the micro-sized semiconductor light- emitting diode.
Claims
[1] A micro-sized semiconductor light-emitting diode comprising: an emission material layer formed on a silicon substrate, and including a silicon nano-dot; a hole injecting layer and an electron injecting layer that face each other, wherein the hole injecting layer and an electron injecting layer are formed between the emission material layer; a transparent conductive electrode layer formed on the electron injecting layer; and a first electrode and a second electrode that respectively inject a current in the hole injecting layer and the transparent conductive electrode layer from the outside.
[2] The micro-sized semiconductor light-emitting diode of claim 1, wherein the emission material layer comprises an amorphous silicon nitride (SiN) layer.
[3] The micro-sized semiconductor light-emitting diode of claim 1, wherein the hole injecting layer and the electron injecting layer comprise a p-type silicon carbide- based material layer and a n-type silicon carbide-based material layer, respectively.
[4] The micro-sized semiconductor light-emitting diode of claim 1, wherein the transparent conductive electrode layer is formed of any one selected from the group consisting of indium tin oxide (ITO), SnO , In O , Cd SnO and ZnO.
2 2 3 2 4
[5] The micro-sized semiconductor light-emitting diode of claim 1, wherein the hole injecting layer is formed on the silicon substrate, the emission material layer is formed on the hole injecting layer, and the electron injecting layer is formed on the emission material layer.
[6] A semiconductor light-emitting diode array comprising a plurality of unit semiconductor light-emitting diodes that are arranged in a plurality of row and a plurality of columns, wherein each of the unit semiconductor light-emitting diodes comprises: an emission material layer formed on a silicon substrate, and including a silicon nano-dot; a hole injecting layer and an electron injecting layer that face each other, wherein the hole injecting layer and an electron injecting layer are formed between the emission material layer; a transparent conductive electrode layer formed on the electron injecting layer; and a first electrode and a second
electrode that respectively inject to the hole injecting layer and the transparent conductive electrode layer from the outside, and wherein each of the unit semiconductor light-emitting diodes controls light emission by using the first electrode and the second electrode. [7] The semiconductor light-emitting diode array of claim 6, wherein the emission material layer comprises an amorphous silicon nitride (SiN) layer. [8] The semiconductor light-emitting diode array of claim 6, wherein each of the horizontal and vertical lengths of the unit semiconductor light-emitting diodes is
100 /M or less. [9] A method of fabricating a micro-sized semiconductor light-emitting diode, the method comprising: forming an emission material layer including a silicon nano-dot on a silicon substrate; forming a hole injecting layer and an electron injecting layer to face each other, wherein the hole injecting layer and the electron injecting layer are formed between the emission material layer; forming a transparent conductive electrode layer on the electron injecting layer; and forming a first electrode and a second electrode that respectively inject a current in the hole injecting layer and the transparent conductive electrode layer from the outside. [10] The method of claim 9, wherein the emission material layer comprises an amorphous silicon nitride (SiN) layer. [11] The method of claim 9, wherein the hole injecting layer is formed by forming a p-type silicon carbide-based material layer on the silicon substrate, and the electron injecting layer is formed by forming an n-type silicon carbide-based material layer on the emission material layer. [12] The method of claim 9, further comprising: after forming the transparent conductive electrode layer, heat-treating the transparent conductive electrode layer at a temperature between an ambient temperature and 1000 0C.
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008062933A1 (en) | 2008-12-23 | 2010-07-01 | Osram Opto Semiconductors Gmbh | Opto-electronic projection device |
EP3038172A3 (en) * | 2014-12-26 | 2016-09-14 | LG Innotek Co., Ltd. | Light emitting device, light emitting device array and lighting apparatus including the same |
EP3093834A1 (en) * | 2015-04-24 | 2016-11-16 | LG Electronics Inc. | Display device using semiconductor light emitting device and manufacturing method thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040020582A (en) * | 2002-08-31 | 2004-03-09 | 한국전자통신연구원 | Optoelectronic device using dual structure nano dots and method for manufacturing the same |
KR20040096871A (en) * | 2004-10-04 | 2004-11-17 | 광주과학기술원 | Silicon-Based LED and Fabricating Method Thereof |
KR20050089769A (en) * | 2005-08-19 | 2005-09-08 | 장구현 | Highly efficient group Ⅲ-nitride-based top emitting light emitting device for high brightness solid state lighting sources of large area and capability |
KR20050099739A (en) * | 2004-04-12 | 2005-10-17 | 한국전자통신연구원 | Silicon light emitting device and method of manufacturing the same |
-
2007
- 2007-10-31 WO PCT/KR2007/005469 patent/WO2008060053A1/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040020582A (en) * | 2002-08-31 | 2004-03-09 | 한국전자통신연구원 | Optoelectronic device using dual structure nano dots and method for manufacturing the same |
KR20050099739A (en) * | 2004-04-12 | 2005-10-17 | 한국전자통신연구원 | Silicon light emitting device and method of manufacturing the same |
KR20040096871A (en) * | 2004-10-04 | 2004-11-17 | 광주과학기술원 | Silicon-Based LED and Fabricating Method Thereof |
KR20050089769A (en) * | 2005-08-19 | 2005-09-08 | 장구현 | Highly efficient group Ⅲ-nitride-based top emitting light emitting device for high brightness solid state lighting sources of large area and capability |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008062933A1 (en) | 2008-12-23 | 2010-07-01 | Osram Opto Semiconductors Gmbh | Opto-electronic projection device |
WO2010072191A1 (en) | 2008-12-23 | 2010-07-01 | Osram Opto Semiconductors Gmbh | Optoelectronic projection apparatus |
JP2012513667A (en) * | 2008-12-23 | 2012-06-14 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Optoelectronic projector |
US8716724B2 (en) | 2008-12-23 | 2014-05-06 | Osram Opto Semiconductors Gmbh | Optoelectronic projection device |
EP3038172A3 (en) * | 2014-12-26 | 2016-09-14 | LG Innotek Co., Ltd. | Light emitting device, light emitting device array and lighting apparatus including the same |
US9620683B2 (en) | 2014-12-26 | 2017-04-11 | Lg Innotek Co., Ltd. | Light emitting device, light emitting device array and lighting apparatus including the same |
EP3093834A1 (en) * | 2015-04-24 | 2016-11-16 | LG Electronics Inc. | Display device using semiconductor light emitting device and manufacturing method thereof |
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