JP6755375B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6755375B2 JP6755375B2 JP2019170178A JP2019170178A JP6755375B2 JP 6755375 B2 JP6755375 B2 JP 6755375B2 JP 2019170178 A JP2019170178 A JP 2019170178A JP 2019170178 A JP2019170178 A JP 2019170178A JP 6755375 B2 JP6755375 B2 JP 6755375B2
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- Design And Manufacture Of Integrated Circuits (AREA)
Description
図1は、半導体装置の全体構成を示すブロック図である。本構成例の半導体装置100は、車載用ハイサイドスイッチICであり、装置外部との電気的な接続を確立する手段として、複数の外部端子(INピン、GNDピン、OUTピン、STピン、VBBピン)を備えている。INピンは、CMOSロジックICなどから制御信号の外部入力を受け付けるための入力端子である。GNDピンは、接地端子である。OUTピンは、負荷(エンジン制御用ECU[electronic control unit]、エアコン、ボディ機器など)が外部接続される出力端子である。STピンは、CMOSロジックICなどに自己診断信号を外部出力するための出力端子である。VBBピンは、バッテリから電源電圧Vbb(例えば4.5V〜18V)の供給を受け付けるための電源端子である。なお、VBBピンは、大電流を流すために複数並列(例えば4ピン並列)に設けてもよい。
図2は、トランジスタN1の第1実施形態を示す模式図である。本図の上段には、トランジスタN1の上面図が描写されており、パッドの配置レイアウトやパッド周辺の電流密度分布(延いては温度分布)が描写されている。なお、上面図のハッチング領域は、斜線密度(濃度)が高い領域ほど電流密度が高いことを示している。一方、本図の下段には、トランジスタN1を上面図の一点鎖線α1−α2で切断したときの縦断面図が描写されている。なお、図示の便宜上、層の厚さ、トレンチゲートのサイズや数、パッドのサイズや数、温度検出素子10aのサイズなどについては、実際と異なっている場合がある。
図3は、トランジスタN1の第2実施形態を示す模式図である。本実施形態のトランジスタN1は、先の第1実施形態(図2)をベースとしつつ、パッド210a〜210fの配置レイアウトに工夫を凝らした点に特徴を有する。そこで、第1実施形態と同様の構成要素については、図2と同一の符号を付すことで重複した説明を割愛し、以下では、第2実施形態の特徴部分について重点的な説明を行う。
図4は、トランジスタN1の第3実施形態を示す模式図である。本実施形態のトランジスタN1は、先の第2実施形態(図3)をベースとしつつ、パッド210a〜210fの配置レイアウトにさらなる工夫を凝らした点に特徴を有する。そこで、第2実施形態と同様の構成要素については、図3と同一の符号を付すことで重複した説明を割愛し、以下では、第3実施形態の特徴部分について重点的な説明を行う。
図5は、トランジスタN1の第4実施形態を示す模式図である。本実施形態のトランジスタN1は、先の第1実施形態(図2)をベースとしつつ、パッド210a〜210fを単一のパッド210gに集約し、さらに、そのパッド210gの配置レイアウトに工夫を凝らした点に特徴を有する。そこで、第1実施形態と同様の構成要素については、図2と同一の符号を付すことで重複した説明を割愛し、以下では、第4実施形態の特徴部分について重点的な説明を行う。
図6は、半導体装置100における電源ラインの敷設例を示す模式図である。本図の半導体装置100は、n型半導体基板層を土台とする半導体基板300(図2〜図5の半導体基板200に相当)を有する。
図7は、トランジスタN1の第5実施形態を示す模式図(上面図)である。本実施形態のトランジスタN1は、横型構造のパワートランジスタであり、半導体基板400と、半導体基板400上に形成されたチャネル領域401と、チャネル領域401から半導体基板400の端辺に向けて敷設されたソース電極402及びドレイン電極403と、各電極上にそれぞれ形成されたワイヤボンディング用のパッド列404及び405と、を含むほか、さらに、ソース電極402上でパッド列404よりもチャネル領域401寄りに偏在配置された電流集中パッド406を含む。
上記では、いずれもハイサイドスイッチを適用対象としてパッドの配置レイアウトに関する説明を行ったが、これまでに説明してきたパッドの配置レイアウトについては、ローサイドスイッチ(図8を参照)にも適用することが可能である。
図10は、トランジスタN1の第6実施形態を示す模式図である。本実施形態では、先出の第3実施形態(図4)をベースとしつつ、実機に即してより具体的な構造が描写されている。なお、本図下段には、本図上段の破線領域(=温度検出素子10aの周辺領域)における縦断面図が描写されている。
図11は、ICレイアウトの一具体例を示す模式図である。本図の半導体装置500には、2チャンネル分のNチャネル型MOS電界効果トランジスタ510及び520(それぞれ先出のトランジスタN1に相当)が集積化されている。
図13は、車両の一構成例を示す外観図である。本構成例の車両Xは、バッテリ(本図では不図示)と、バッテリから電源電圧Vbbの供給を受けて動作する種々の電子機器X11〜X18と、を搭載している。なお、本図における電子機器X11〜X18の搭載位置については、図示の便宜上、実際とは異なる場合がある。
なお、上記の実施形態では、車載用ハイサイドスイッチICを例に挙げて説明を行ったが、本明細書中に開示されている発明の適用対象は、これに限定されるものではなく、その他の用途に供される車載用IPD[intelligent power device](車載用ローサイドスイッチICや車載用電源ICなど)を始めとして、パワートランジスタを有する半導体装置全般に広く適用することが可能である。
2 定電圧生成回路
3 発振回路
4 チャージポンプ回路
5 ロジック回路
6 ゲート制御回路
7 クランプ回路
8 入力回路
9 基準生成回路
10 温度保護回路
10a 温度検出素子
10a1 高濃度p型半導体領域
10a2 高濃度n型半導体領域
10b メタル配線
11 減電圧保護回路
12 オープン保護回路
13 過電流保護回路
100 半導体装置
200 半導体基板
201 n型半導体基板層
202 低濃度n型半導体層
203 高濃度p型半導体層
204 ゲート酸化膜
205 ゲートポリシリコン
206 高濃度n型半導体領域
207 層間絶縁膜
208 ソース電極(第1電極)
208a スリット
209 ドレイン電極(第2電極)
210a〜210g パッド
300 半導体基板
301 パワートランジスタ形成領域
302 ソース電極
303 ドレイン電極(基板電極)
304a、304b 回路形成領域
305a、305b 電源ライン
306a、306b 層間ビア
400 半導体基板
401 チャネル領域
402 ソース電極
403 ドレイン電極
404、405 パッド列
406 電流集中パッド
500 半導体装置
510、520 Nチャネル型MOS電界効果トランジスタ
511、521 ソース電極
512a、512b、522a、522b 主パッド
513、523 副パッド
D10、D20 温度検出素子(ダイオード)
N1 Nチャネル型MOS電界効果トランジスタ(パワートランジスタ)
N2 Nチャネル型MOS電界効果トランジスタ(電流検出トランジスタ)
N3 Nチャネル型MOS電界効果トランジスタ(信号出力トランジスタ)
R1、R2 抵抗
Rs センス抵抗
Z1、Z2 ツェナダイオード
LSW ローサイドスイッチ
X 車両
X11〜X18 電子機器
Claims (13)
- パワートランジスタと、
前記パワートランジスタの異常発熱を検出する温度検出素子と、
を有し、
前記パワートランジスタは、
半導体基板の第1主面側に形成された第1電極と、
前記第1電極上で偏在配置された複数のパッドと、
を含み、
前記複数のパッドは、最も電流の集中しやすいパッドが唯一に特定されるように前記第1電極上で偏在配置されており、
前記温度検出素子は、前記複数のパッドの偏在配置により特定される前記パワートランジスタの最大発熱箇所に形成されていることを特徴とする半導体装置。 - パワートランジスタと、
前記パワートランジスタの異常発熱を検出する温度検出素子と、
を有し、
前記パワートランジスタは、
半導体基板の第1主面側に形成された第1電極と、
前記第1電極上で偏在配置された単一のパッドと、
を含み、
前記パッドは、その周囲における電流密度分布が特定の方向へ偏るように前記第1電極上で偏在配置されており、
前記温度検出素子は、前記パッドの偏在配置により特定される前記パワートランジスタの最大発熱箇所に形成されていることを特徴とする半導体装置。 - 前記パワートランジスタは、前記第1電極が負荷に接続されたハイサイドスイッチとして機能することを特徴とする請求項1または請求項2に記載の半導体装置。
- 前記パワートランジスタは、前記第1電極が接地端に接続されたローサイドスイッチとして機能することを特徴とする請求項1または請求項2に記載の半導体装置。
- 前記第1電極には、前記温度検出素子の配線を端辺まで引き出すためのスリットが形成されていることを特徴とする請求項1〜請求項4のいずれか一項に記載の半導体装置。
- 前記温度検出素子は、前記パッドの近傍に設けられており、
前記スリットは、前記温度検出素子から見て、前記パッドとは反対の方向に向けて形成されていることを特徴とする請求項5に記載の半導体装置。 - 前記複数のパッドは、それらのうちで最も温度保護回路に近いパッドの角部に最も電流が集中するように、前記第1電極上で偏在配置されていることを特徴とする請求項1に記載の半導体装置。
- 前記温度検出素子は、前記角部の近傍に設けられていることを特徴とする請求項7に記載の半導体装置。
- 前記温度検出素子は、前記角部から前記第1電極の端辺に至る複数の方向のうち、前記角部から各端辺までの距離が長い方向に配置されていることを特徴とする請求項7または請求項8に記載の半導体装置。
- 前記複数のパッドは、主パッドと、前記主パッドよりも小さい副パッドと、を含むことを特徴とする請求項7〜請求項9のいずれか一項に記載の半導体装置。
- 前記温度検出素子で前記パワートランジスタの異常発熱が検出されたときに前記パワートランジスタを強制的にオフさせる温度保護回路をさらに有することを特徴とする請求項1〜請求項10のいずれか一項に記載の半導体装置。
- 請求項1〜請求項11のいずれか一項に記載の半導体装置を有することを特徴とする電子機器。
- バッテリと、
前記バッテリから電源電圧の供給を受けて動作する請求項12に記載の電子機器と、
を有することを特徴とする車両。
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