JP6745165B2 - ウェーハの加工方法 - Google Patents
ウェーハの加工方法 Download PDFInfo
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- JP6745165B2 JP6745165B2 JP2016156451A JP2016156451A JP6745165B2 JP 6745165 B2 JP6745165 B2 JP 6745165B2 JP 2016156451 A JP2016156451 A JP 2016156451A JP 2016156451 A JP2016156451 A JP 2016156451A JP 6745165 B2 JP6745165 B2 JP 6745165B2
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- wafer
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- 238000003672 processing method Methods 0.000 title description 9
- 238000000034 method Methods 0.000 claims description 10
- 235000012431 wafers Nutrition 0.000 description 81
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000003754 machining Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
Description
13 保持テーブル
51 制御手段
C 角
D デバイス
DC デバイスチップ
L1 第1のストリート
L2 第2のストリート
R 改質層
W ウェーハ
W1 表面
W2 裏面
Claims (1)
- ウェーハ表面に第一方向に伸長する複数の第1ストリートと、該第一方向と直交する第二方向に伸長する複数の第2ストリートとにより区画された各領域に複数のデバイスを備えたウェーハを分割するウェーハの加工方法であって、
ウェーハに対して透過性を有する波長のレーザービームをウェーハ裏面側から照射して、該第1ストリート及び該第2ストリートに沿ってウェーハの内部に2層以上の改質層を形成する改質層形成ステップと、
該改質層形成ステップを実施した後に、ウェーハの裏面から研削手段により研削し仕上げ厚みへと薄化するとともに前記改質層を起点としてウェーハを該第1ストリート及び該第2ストリートに沿って分割する分割ステップと、を備え、
該改質層形成ステップにおいては、隣接するデバイスチップの角同士が分割時に対角線上で擦れないように、少なくとも該第1ストリートにおけるウェーハ表面側の最下層の改質層を、隣接するデバイス毎に該第1ストリート内で該第二方向にずらして形成すること、を特徴とするウェーハの加工方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016156451A JP6745165B2 (ja) | 2016-08-09 | 2016-08-09 | ウェーハの加工方法 |
TW106121541A TWI719225B (zh) | 2016-08-09 | 2017-06-28 | 晶圓的加工方法 |
KR1020170095321A KR102272439B1 (ko) | 2016-08-09 | 2017-07-27 | 웨이퍼 가공 방법 |
CN201710637451.XA CN107706150B (zh) | 2016-08-09 | 2017-07-31 | 晶片的加工方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016156451A JP6745165B2 (ja) | 2016-08-09 | 2016-08-09 | ウェーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018026426A JP2018026426A (ja) | 2018-02-15 |
JP6745165B2 true JP6745165B2 (ja) | 2020-08-26 |
Family
ID=61170775
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016156451A Active JP6745165B2 (ja) | 2016-08-09 | 2016-08-09 | ウェーハの加工方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6745165B2 (ja) |
KR (1) | KR102272439B1 (ja) |
CN (1) | CN107706150B (ja) |
TW (1) | TWI719225B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6627898B2 (ja) | 2018-02-16 | 2020-01-08 | 株式会社タダノ | クレーン |
CN112775539A (zh) * | 2019-11-07 | 2021-05-11 | 大族激光科技产业集团股份有限公司 | 激光加工方法及装置 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06275714A (ja) * | 1993-03-22 | 1994-09-30 | Mitsubishi Electric Corp | 半導体レーザ装置素子基板、及び半導体レーザ装置の製造方法 |
KR100715576B1 (ko) | 2002-03-12 | 2007-05-09 | 하마마츠 포토닉스 가부시키가이샤 | 기판의 분할 방법 |
JP4240362B2 (ja) | 2002-12-02 | 2009-03-18 | 住友電気工業株式会社 | 化合物半導体ウエハの劈開方法 |
JP4494728B2 (ja) | 2003-05-26 | 2010-06-30 | 株式会社ディスコ | 非金属基板の分割方法 |
JP4634089B2 (ja) | 2004-07-30 | 2011-02-16 | 浜松ホトニクス株式会社 | レーザ加工方法 |
JP5090897B2 (ja) | 2007-12-28 | 2012-12-05 | 株式会社ディスコ | ウェーハの分割方法 |
JP5395411B2 (ja) | 2008-11-20 | 2014-01-22 | 株式会社ディスコ | ウエーハのレーザー加工方法 |
JP2011035253A (ja) * | 2009-08-04 | 2011-02-17 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2011108708A (ja) | 2009-11-13 | 2011-06-02 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP5625521B2 (ja) | 2010-06-16 | 2014-11-19 | 豊田合成株式会社 | レーザ加工方法 |
JP5770446B2 (ja) * | 2010-09-30 | 2015-08-26 | 株式会社ディスコ | 分割方法 |
JP2013089714A (ja) * | 2011-10-17 | 2013-05-13 | Disco Abrasive Syst Ltd | チップ形成方法 |
JP6053381B2 (ja) * | 2012-08-06 | 2016-12-27 | 株式会社ディスコ | ウェーハの分割方法 |
JP6101468B2 (ja) | 2012-10-09 | 2017-03-22 | 株式会社ディスコ | ウェーハの加工方法 |
JP5598801B2 (ja) | 2012-12-18 | 2014-10-01 | 株式会社レーザーシステム | レーザーダイシング方法、チップの製造方法およびレーザー加工装置 |
JP6045361B2 (ja) | 2013-01-17 | 2016-12-14 | 株式会社ディスコ | ウエーハの加工方法 |
JP2015138815A (ja) * | 2014-01-21 | 2015-07-30 | 株式会社ディスコ | 光デバイス及び光デバイスの加工方法 |
JP6277017B2 (ja) * | 2014-03-03 | 2018-02-07 | 株式会社ディスコ | 光デバイス |
JP2015201585A (ja) | 2014-04-10 | 2015-11-12 | 株式会社ディスコ | ウェーハの加工方法 |
JP6494334B2 (ja) * | 2015-03-05 | 2019-04-03 | 株式会社ディスコ | デバイスチップの製造方法 |
JP6636384B2 (ja) * | 2016-05-13 | 2020-01-29 | 株式会社ディスコ | ウェーハの加工方法 |
-
2016
- 2016-08-09 JP JP2016156451A patent/JP6745165B2/ja active Active
-
2017
- 2017-06-28 TW TW106121541A patent/TWI719225B/zh active
- 2017-07-27 KR KR1020170095321A patent/KR102272439B1/ko active IP Right Grant
- 2017-07-31 CN CN201710637451.XA patent/CN107706150B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
TW201806017A (zh) | 2018-02-16 |
KR102272439B1 (ko) | 2021-07-01 |
JP2018026426A (ja) | 2018-02-15 |
CN107706150A (zh) | 2018-02-16 |
CN107706150B (zh) | 2021-07-09 |
KR20180018329A (ko) | 2018-02-21 |
TWI719225B (zh) | 2021-02-21 |
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