TWI719225B - 晶圓的加工方法 - Google Patents

晶圓的加工方法 Download PDF

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Publication number
TWI719225B
TWI719225B TW106121541A TW106121541A TWI719225B TW I719225 B TWI719225 B TW I719225B TW 106121541 A TW106121541 A TW 106121541A TW 106121541 A TW106121541 A TW 106121541A TW I719225 B TWI719225 B TW I719225B
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TW
Taiwan
Prior art keywords
wafer
modified layer
scribe lane
lane
axis direction
Prior art date
Application number
TW106121541A
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English (en)
Chinese (zh)
Other versions
TW201806017A (zh
Inventor
廣澤俊一郎
Original Assignee
日商迪思科股份有限公司
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Publication date
Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW201806017A publication Critical patent/TW201806017A/zh
Application granted granted Critical
Publication of TWI719225B publication Critical patent/TWI719225B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
TW106121541A 2016-08-09 2017-06-28 晶圓的加工方法 TWI719225B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-156451 2016-08-09
JP2016156451A JP6745165B2 (ja) 2016-08-09 2016-08-09 ウェーハの加工方法

Publications (2)

Publication Number Publication Date
TW201806017A TW201806017A (zh) 2018-02-16
TWI719225B true TWI719225B (zh) 2021-02-21

Family

ID=61170775

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106121541A TWI719225B (zh) 2016-08-09 2017-06-28 晶圓的加工方法

Country Status (4)

Country Link
JP (1) JP6745165B2 (ja)
KR (1) KR102272439B1 (ja)
CN (1) CN107706150B (ja)
TW (1) TWI719225B (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6627898B2 (ja) 2018-02-16 2020-01-08 株式会社タダノ クレーン
CN112775539A (zh) * 2019-11-07 2021-05-11 大族激光科技产业集团股份有限公司 激光加工方法及装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012079800A (ja) * 2010-09-30 2012-04-19 Disco Abrasive Syst Ltd 分割方法
TW201543560A (zh) * 2014-04-10 2015-11-16 Disco Corp 晶圓之加工方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06275714A (ja) * 1993-03-22 1994-09-30 Mitsubishi Electric Corp 半導体レーザ装置素子基板、及び半導体レーザ装置の製造方法
EP3252806B1 (en) 2002-03-12 2019-10-09 Hamamatsu Photonics K.K. Substrate dividing method
JP4240362B2 (ja) 2002-12-02 2009-03-18 住友電気工業株式会社 化合物半導体ウエハの劈開方法
JP4494728B2 (ja) 2003-05-26 2010-06-30 株式会社ディスコ 非金属基板の分割方法
JP4634089B2 (ja) 2004-07-30 2011-02-16 浜松ホトニクス株式会社 レーザ加工方法
JP5090897B2 (ja) 2007-12-28 2012-12-05 株式会社ディスコ ウェーハの分割方法
JP5395411B2 (ja) 2008-11-20 2014-01-22 株式会社ディスコ ウエーハのレーザー加工方法
JP2011035253A (ja) * 2009-08-04 2011-02-17 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2011108708A (ja) 2009-11-13 2011-06-02 Disco Abrasive Syst Ltd ウエーハの加工方法
JP5625521B2 (ja) 2010-06-16 2014-11-19 豊田合成株式会社 レーザ加工方法
JP2013089714A (ja) * 2011-10-17 2013-05-13 Disco Abrasive Syst Ltd チップ形成方法
JP6053381B2 (ja) * 2012-08-06 2016-12-27 株式会社ディスコ ウェーハの分割方法
JP6101468B2 (ja) 2012-10-09 2017-03-22 株式会社ディスコ ウェーハの加工方法
JP5598801B2 (ja) 2012-12-18 2014-10-01 株式会社レーザーシステム レーザーダイシング方法、チップの製造方法およびレーザー加工装置
JP6045361B2 (ja) 2013-01-17 2016-12-14 株式会社ディスコ ウエーハの加工方法
JP2015138815A (ja) * 2014-01-21 2015-07-30 株式会社ディスコ 光デバイス及び光デバイスの加工方法
JP6277017B2 (ja) * 2014-03-03 2018-02-07 株式会社ディスコ 光デバイス
JP6494334B2 (ja) * 2015-03-05 2019-04-03 株式会社ディスコ デバイスチップの製造方法
JP6636384B2 (ja) * 2016-05-13 2020-01-29 株式会社ディスコ ウェーハの加工方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012079800A (ja) * 2010-09-30 2012-04-19 Disco Abrasive Syst Ltd 分割方法
TW201543560A (zh) * 2014-04-10 2015-11-16 Disco Corp 晶圓之加工方法

Also Published As

Publication number Publication date
KR20180018329A (ko) 2018-02-21
JP6745165B2 (ja) 2020-08-26
TW201806017A (zh) 2018-02-16
CN107706150A (zh) 2018-02-16
JP2018026426A (ja) 2018-02-15
KR102272439B1 (ko) 2021-07-01
CN107706150B (zh) 2021-07-09

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