KR102272439B1 - 웨이퍼 가공 방법 - Google Patents

웨이퍼 가공 방법 Download PDF

Info

Publication number
KR102272439B1
KR102272439B1 KR1020170095321A KR20170095321A KR102272439B1 KR 102272439 B1 KR102272439 B1 KR 102272439B1 KR 1020170095321 A KR1020170095321 A KR 1020170095321A KR 20170095321 A KR20170095321 A KR 20170095321A KR 102272439 B1 KR102272439 B1 KR 102272439B1
Authority
KR
South Korea
Prior art keywords
wafer
street
modified layer
axis direction
modified
Prior art date
Application number
KR1020170095321A
Other languages
English (en)
Korean (ko)
Other versions
KR20180018329A (ko
Inventor
슌이치로 히로사와
šœ이치로 히로사와
Original Assignee
가부시기가이샤 디스코
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시기가이샤 디스코 filed Critical 가부시기가이샤 디스코
Publication of KR20180018329A publication Critical patent/KR20180018329A/ko
Application granted granted Critical
Publication of KR102272439B1 publication Critical patent/KR102272439B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
KR1020170095321A 2016-08-09 2017-07-27 웨이퍼 가공 방법 KR102272439B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016156451A JP6745165B2 (ja) 2016-08-09 2016-08-09 ウェーハの加工方法
JPJP-P-2016-156451 2016-08-09

Publications (2)

Publication Number Publication Date
KR20180018329A KR20180018329A (ko) 2018-02-21
KR102272439B1 true KR102272439B1 (ko) 2021-07-01

Family

ID=61170775

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170095321A KR102272439B1 (ko) 2016-08-09 2017-07-27 웨이퍼 가공 방법

Country Status (4)

Country Link
JP (1) JP6745165B2 (ja)
KR (1) KR102272439B1 (ja)
CN (1) CN107706150B (ja)
TW (1) TWI719225B (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6627898B2 (ja) 2018-02-16 2020-01-08 株式会社タダノ クレーン
CN112775539A (zh) * 2019-11-07 2021-05-11 大族激光科技产业集团股份有限公司 激光加工方法及装置

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004186340A (ja) 2002-12-02 2004-07-02 Sumitomo Electric Ind Ltd 化合物半導体ウエハの劈開方法
US20040241962A1 (en) 2003-05-26 2004-12-02 Yusuke Nagai Method of dividing a non-metal substrate
JP2006043713A (ja) 2004-07-30 2006-02-16 Hamamatsu Photonics Kk レーザ加工方法
JP2009158889A (ja) 2007-12-28 2009-07-16 Disco Abrasive Syst Ltd ウェーハの分割方法
JP2010123797A (ja) 2008-11-20 2010-06-03 Disco Abrasive Syst Ltd ウエーハのレーザー加工方法
JP2011108708A (ja) 2009-11-13 2011-06-02 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2012004316A (ja) 2010-06-16 2012-01-05 Showa Denko Kk レーザ加工方法
JP2014033163A (ja) 2012-08-06 2014-02-20 Disco Abrasive Syst Ltd ウェーハの分割方法
JP2014078556A (ja) 2012-10-09 2014-05-01 Disco Abrasive Syst Ltd ウェーハの加工方法
JP2014138113A (ja) 2013-01-17 2014-07-28 Disco Abrasive Syst Ltd ウエーハの加工方法
JP5598801B2 (ja) 2012-12-18 2014-10-01 株式会社レーザーシステム レーザーダイシング方法、チップの製造方法およびレーザー加工装置
JP2015201585A (ja) 2014-04-10 2015-11-12 株式会社ディスコ ウェーハの加工方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06275714A (ja) * 1993-03-22 1994-09-30 Mitsubishi Electric Corp 半導体レーザ装置素子基板、及び半導体レーザ装置の製造方法
EP3252806B1 (en) 2002-03-12 2019-10-09 Hamamatsu Photonics K.K. Substrate dividing method
JP2011035253A (ja) * 2009-08-04 2011-02-17 Disco Abrasive Syst Ltd ウエーハの加工方法
JP5770446B2 (ja) * 2010-09-30 2015-08-26 株式会社ディスコ 分割方法
JP2013089714A (ja) * 2011-10-17 2013-05-13 Disco Abrasive Syst Ltd チップ形成方法
JP2015138815A (ja) * 2014-01-21 2015-07-30 株式会社ディスコ 光デバイス及び光デバイスの加工方法
JP6277017B2 (ja) * 2014-03-03 2018-02-07 株式会社ディスコ 光デバイス
JP6494334B2 (ja) * 2015-03-05 2019-04-03 株式会社ディスコ デバイスチップの製造方法
JP6636384B2 (ja) * 2016-05-13 2020-01-29 株式会社ディスコ ウェーハの加工方法

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004186340A (ja) 2002-12-02 2004-07-02 Sumitomo Electric Ind Ltd 化合物半導体ウエハの劈開方法
US20040241962A1 (en) 2003-05-26 2004-12-02 Yusuke Nagai Method of dividing a non-metal substrate
JP2006043713A (ja) 2004-07-30 2006-02-16 Hamamatsu Photonics Kk レーザ加工方法
JP2009158889A (ja) 2007-12-28 2009-07-16 Disco Abrasive Syst Ltd ウェーハの分割方法
JP2010123797A (ja) 2008-11-20 2010-06-03 Disco Abrasive Syst Ltd ウエーハのレーザー加工方法
JP2011108708A (ja) 2009-11-13 2011-06-02 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2012004316A (ja) 2010-06-16 2012-01-05 Showa Denko Kk レーザ加工方法
JP2014033163A (ja) 2012-08-06 2014-02-20 Disco Abrasive Syst Ltd ウェーハの分割方法
JP6053381B2 (ja) 2012-08-06 2016-12-27 株式会社ディスコ ウェーハの分割方法
JP2014078556A (ja) 2012-10-09 2014-05-01 Disco Abrasive Syst Ltd ウェーハの加工方法
JP5598801B2 (ja) 2012-12-18 2014-10-01 株式会社レーザーシステム レーザーダイシング方法、チップの製造方法およびレーザー加工装置
JP2014138113A (ja) 2013-01-17 2014-07-28 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2015201585A (ja) 2014-04-10 2015-11-12 株式会社ディスコ ウェーハの加工方法

Also Published As

Publication number Publication date
KR20180018329A (ko) 2018-02-21
JP6745165B2 (ja) 2020-08-26
TW201806017A (zh) 2018-02-16
CN107706150A (zh) 2018-02-16
JP2018026426A (ja) 2018-02-15
TWI719225B (zh) 2021-02-21
CN107706150B (zh) 2021-07-09

Similar Documents

Publication Publication Date Title
KR102368338B1 (ko) 웨이퍼의 가공 방법
KR102369760B1 (ko) 웨이퍼의 가공 방법
KR102226645B1 (ko) 웨이퍼의 가공 방법
KR101771420B1 (ko) 분할 방법
KR102450902B1 (ko) SiC 웨이퍼의 생성 방법
JP5988601B2 (ja) 光デバイスウェーハの分割方法
KR20170012026A (ko) 웨이퍼의 박화 방법
KR20170012025A (ko) 웨이퍼의 박화 방법
TWI732934B (zh) 晶圓之加工方法
KR102515300B1 (ko) 판형물의 분할 장치
KR20150117607A (ko) 웨이퍼 가공 방법
JP6001931B2 (ja) ウェーハの加工方法
KR102272439B1 (ko) 웨이퍼 가공 방법
JP5856491B2 (ja) 光デバイスウェーハの分割方法
JP2012156168A (ja) 分割方法
JP5846764B2 (ja) ウエーハの加工方法
TWI732959B (zh) 晶圓的加工方法
JP2019016651A (ja) ウェーハの加工方法
JP2017050377A (ja) ウエーハの加工方法
JP2011155067A (ja) 加工条件決定方法

Legal Events

Date Code Title Description
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant