TW201722668A - 晶圓之薄化方法 - Google Patents

晶圓之薄化方法 Download PDF

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TW201722668A
TW201722668A TW105119574A TW105119574A TW201722668A TW 201722668 A TW201722668 A TW 201722668A TW 105119574 A TW105119574 A TW 105119574A TW 105119574 A TW105119574 A TW 105119574A TW 201722668 A TW201722668 A TW 201722668A
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wafer
thinning
forming
annular groove
sic substrate
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TW105119574A
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TWI696539B (zh
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Kazuya Hirata
Yoko Nishino
Hiroshi Morikazu
Karl Priewasser
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Disco Corp
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Abstract

本發明係一種晶圓的薄化方法，其課題為提供：未研削背面而可將具有複數之裝置於表面的SiC基板所成之晶圓，薄化為特定厚度之晶圓的薄化方法者。本發明係一種晶圓之薄化方法，係薄化具有加以形成有複數之裝置於SiC基板之第一面的裝置範圍與圍繞裝置範圍之外周剩餘範圍之晶圓之晶圓的薄化方法，其中，包含：於對應於裝置範圍與外周剩餘範圍之邊界部之晶圓的第二面，殘留相當於晶圓的完成厚度之厚度而形成環狀溝之環狀溝形成步驟，和將對於SiC基板而言具有透過性之波長的雷射束之集光點，自第二面定位於相當於晶圓之完成厚度之位置之同時，相對性地移動集光點與SiC基板而照射雷射束於第二面，於相當於晶圓的完成厚度之位置，形成改質層及裂痕而作為分離起點之分離起點形成步驟，和實施該分離起點形成步驟之後，賦予外力而自該分離起點將具有第二面之晶圓，自具有加以形成有多數之裝置的第一面之晶圓分離，薄化具有第一面之晶圓的晶圓薄化之晶圓薄化步驟。

Description

晶圓之薄化方法
本發明係有關加以形成有複數之裝置於SiC基板的表面之晶圓之薄化方法。
IC、LSI等之各種裝置係於將矽基板作為素材之晶圓的表面，層積機能層，加以形成於經由複數之分割預定線而加以區隔於此機能層之範圍。並且，經由研削裝置而研削晶圓的背面，將晶圓薄化為特定的厚度之後，經由切削裝置，雷射加工裝置等之加工裝置而對於晶圓的分割預定線施以加工，將晶圓加以分割成各個裝置晶片，而所分割之裝置晶片係被廣泛地利用於行動電話，電腦等之各種電子機器。
另外，功率裝置或LED、LD等之光裝置係於將SiC基板作為素材之晶圓的表面，層積機能層，加以形成於經由複數之分割預定線而加以區隔於此機能層之範圍。
並且，與上述之矽晶圓同樣地，經由研削裝置而加以研削晶圓的背面而薄化成特定的厚度之後，經由 切削裝置，雷射加工裝置等而對於晶圓的分割預定線施以加工，將晶圓加以分割成各個裝置晶片，而所分割之裝置晶片係被廣泛地利用於各種電子機器。
與矽晶圓同樣地，將SiC基板作為素材之晶圓係如上述，在沿著分割預定線而切斷之前，研削背面而加以薄化為特定之厚度。近年，為了達成電子機器之輕量化，小型化，而要求更薄化晶圓之厚度，例如作為50μm程度者。
如此，加以薄化所研削之晶圓係處理則變為困難，而在搬送等而有破損之虞。因此，僅研削對應於晶圓之裝置範圍的背面而形成圓形凹部，於對應於圍繞裝置範圍之外周剩餘範圍的晶圓背面，形成環狀補強度之研削方法，則以日本特開2007-19379號公報而加以提案。
[先前技術文獻] [專利文獻]
[專利文獻1]日本特開2002-373870號公報
[專利文獻2]日本特開2007-19379號公報
但，SiC基板係比較於矽基板，莫氏硬度非常高，經由具備研磨石之研削砂輪而研削SiC基板所成之晶圓的背面時，而有研削量之4~5倍程度研磨石則產生磨 耗，非常不經濟之問題。
例如，當研削100μm矽基板時，對於研磨石磨耗0.1μm之情況而言，而當研削SiC基板時，研磨石磨耗為400~500μm，比較於研削矽基板之情況，產生4000~5000倍磨耗。
本發明係有鑑於如此的點而作為之構成，作為其目的者係提供：未研削背面而可將具有複數之裝置於表面的SiC基板所成之晶圓，薄化為特定厚度之晶圓的薄化方法。
根據本發明時，加以提供：薄化具備於具有第一面，和與該第一面相反側的第二面，和自該第一面至該第二面之c軸，和正交於該c軸之c面的SiC基板之該第一面，加以形成有複數之裝置的裝置範圍與圍繞該裝置範圍之外周剩餘範圍之晶圓之晶圓的薄化方法，其特徵為具備：於對應於該裝置範圍與該外周剩餘範圍之邊界部之該第二面，殘留相當於所薄化之晶圓的完成厚度之厚度而形成環狀溝之環狀溝形成步驟，和將對於SiC基板而言具有透過性之波長的雷射束之集光點，自該第二面定位於相當於晶圓之完成厚度之位置之同時，相對性地移動該集光點與SiC基板而照射雷射束於該第二面，於相當於由該環狀溝所圍繞之晶圓的完成厚度之位置，形成改質層及自該改質層沿著c面而伸長之裂痕而作為分離起點之分離起點 形成步驟，和實施該分離起點形成步驟之後，賦予外力而自該分離起點將具有該第二面之晶圓，自具有加以形成有複數之裝置的該第一面之晶圓分離，薄化具有該第一面之晶圓薄化之同時，於對應於該外周剩餘範圍之位置，形成環狀之補強度之晶圓薄化步驟；該分離起點形成步驟係包含：對於該第二面之垂線而言，該c軸則偏離角分傾斜，對於與於該第二面與該c面之間加以形成有偏離角之第二方向正交之第一方向，相對性地移動雷射束之集光點，形成伸長於第一方向之直線狀的改質層之改質層形成步驟，和相對性地移動該集光點於該第二方向而進行特定量指標之指標步驟者。
理想係本發明之晶圓的薄化方法，係更具備：在實施晶圓薄化步驟之後，研削具有加以形成有複數的裝置之第一面的晶圓背面而進行平坦化之研削步驟。
當根據本發明之晶圓的薄化方法時，於加以圍繞為環狀溝之晶圓的內部形成改質層及裂痕之後，因賦予外力於晶圓而將改質層及裂痕，於分離起點將晶圓分離成二個之故，可容易地薄化具有加以形成有複數的裝置之第一面的晶圓者。
隨之，成為未以研磨石而研削由SiC基板所形成之晶圓背面者而可薄化，而可消解研磨石產生磨耗而不經濟之問題。更且，具有加以形成有複數之裝置的第一 面之晶圓，係因於外周具有環狀之補強部之故，而經由此補強部而加以抑制晶圓的破損。
研削經由本發明之晶圓的薄化方法而加以薄化之晶圓的背面，作為平坦化之情況係如將晶圓的背面進行1~5μm程度研削即可，而可將此時之研磨石的磨耗量抑制為4~25μm程度者。更且，因可將具有所分離之第二面的晶圓作為SiC基板而再利用之故而有經濟性。
2‧‧‧雷射加工裝置
11‧‧‧SiC錠塊
13，37‧‧‧第一定向平面
15，39‧‧‧第二定向平面
19‧‧‧c軸
21‧‧‧c面
30‧‧‧雷射束照射單元
31‧‧‧SiC晶圓
36‧‧‧集光器(雷射頭)
41‧‧‧保護膠帶
43‧‧‧改質層
45‧‧‧裂痕
47‧‧‧環狀溝
49‧‧‧分離面
76‧‧‧研削砂輪
82‧‧‧研磨石
圖1係適合於實施本發明之晶圓的薄化方法之雷射加工裝置的斜視圖。
圖2係雷射束產生單元的方塊圖。
圖3(A)係SiC錠塊之斜視圖，圖3(B)係其正面圖。
圖4係顯示於具有複數的裝置於表面之SiC晶圓表面，貼著保護膠帶樣子的斜視圖。
圖5(A)係顯示將晶圓，藉由加以貼著於表面之保護膠帶而載置於夾盤上狀態之斜視圖，圖5(B)係吸引保持於夾盤之晶圓的斜視圖。
圖6係顯示環狀溝形成步驟之斜視圖。
圖7(A)係加以形成有環狀溝於晶圓的背面狀態之斜視圖，圖7(B)係顯示環狀溝部分之晶圓的剖面圖。
圖8係說明分離起點形成步驟之斜視圖。
圖9係SiC晶圓背面之平面圖。
圖10係說明改質層形成步驟之模式剖面圖。
圖11係說明改質層形成步驟之模式平面圖。
圖12係說明晶圓薄化步驟之斜視圖(其一)。
圖13係說明晶圓薄化步驟之斜視圖(其二)。
圖14係顯示研削晶圓的背面而作為平坦化之研削步驟的斜視圖。
圖15係加以貼著保護膠帶於表面，而背面則經由研削步驟而加以平坦化之SiC晶圓的背面側斜視圖。
以下，參照圖面而加以說明本發明之實施形態。參照圖1時，加以顯示適合實施本發明之晶圓的薄化方法之雷射加工裝置2的斜視圖。雷射加工裝置2係包含可移動於X軸方向地加以搭載於靜止基台4上之第一滑塊6。
第一滑塊6係經由自滾珠螺桿8及脈衝馬達10所構成之加工傳送機構12而沿著一對的導軌14，加以移動於加工傳送方向，即X軸方向。
對於第一滑塊6上，係可移動於Y軸方向地加以搭載第二滑塊16。即，第二滑塊16係經由自滾珠螺桿18及脈衝馬達20所構成之分度供給機構22而沿著一對的導軌24，加以移動於分度供給方向，即Y軸方向。
對於第二滑塊16上，係加以搭載有具有吸引保持部26a之夾盤26。夾盤26係經由加工傳送機構12 及分度供給機構22而可移動於X軸方向及Y軸方向之同時，經由收容於第二滑塊16中之馬達而加以旋轉。
對於靜止基台4係加以立設有柱狀體28，而於此柱狀體28，加以安裝有雷射束照射機構(雷射束照射手段)30。雷射束照射機構30係由收容於套筒32中之圖2所示之雷射束產生單元34，和加以安裝於套筒32之前端的集光器(雷射頭)36所構成。對於套筒32之前端係加以安裝有集光器36與排列於X軸方向而具有顯微鏡及攝影機之攝影單元38。
雷射束產生單元34係如圖2所示，包含震盪YAG雷射或YVO4之雷射震盪器40，和反覆頻率設定手段42，和脈衝寬度調整手段44，和功率調整手段46。雖未特別圖示，但雷射震盪器40係具有布魯斯特窗，而自雷射震盪器40所出射之雷射束係直線偏光的雷射束。
經由雷射束產生單元34之功率調整手段46而加以調整為特定功率之脈衝雷射束係經由集光器36之反射鏡48而加以反射，更且經由集光透鏡50而保持於夾盤26之被加工物的SiC晶圓31內部，加以定位集光點而加以照射。
當參照圖3(A)時，加以顯示SiC錠塊(以下，有單略稱作錠塊之情況)11之斜視圖。圖3(B)係圖3(A)所示之SiC錠塊11的正面圖。
錠塊11係具有第一面(上面)11a和與第一面11a相反側的第二面(背面)11b。錠塊11之上面11a係成 為雷射束之照射面之故而加以研磨成鏡面。
錠塊11係具有：第一定向平面13，和正交於第一定向平面13之第二定向平面15。第一定向平面13之長度係較第二定向平面15的長度為長地加以形成。
錠塊11係對於上面11a之垂線17而言，而於第二定向平面15方向，具有偏離角α傾斜之c軸19與正交於c軸19之c面21。c面21係對於錠塊11之上面11a而言作為偏離角α傾斜。一般而言，在六方晶單結晶錠塊11中，正交於短的第二定向平面15之伸長方向的方向則為c軸之傾斜方向。
c面21係於錠塊11中，以錠塊11之分子位準而無數地加以設定。在本實施形態中，偏離角α係加以設定為4°。但，偏離角α係並非加以限定為4°者，而例如在1°~6°之範圍可自由地設定而製造錠塊11者。
再次參照圖1時，對於靜止基台4之左側係加以固定有柱狀體52，而於柱狀體52係藉由加以形成於柱狀體52之開口53，按壓機構54則可移動於上下方向地加以搭載。
當參照圖4時，加以顯示貼著保護膠帶41於SiC晶圓31之表面31a的樣子之斜視圖。SiC晶圓(以下，有單略稱為晶圓之情況)31係以線鋸而切片圖3所示之SiC錠塊11者，而具有約700μm的厚度。
晶圓31之表面31a係加以鏡面加工之後，於表面31a，經由光微影而加以形成功率裝置等之複數之裝 置35。各裝置35係加以形成於經由形成為格子狀之複數的分割預定線33而加以區隔之各範圍。晶圓31係將加以形成有複數之裝置35之裝置範圍35a，和圍繞裝置範圍35a之外周剩餘範圍31c具有於其表面31a。
SiC錠塊31係具有：第一定向平面37，和正交於第一定向平面37之第二定向平面39。第一定向平面37之長度係較第二定向平面39的長度為長地加以形成。
在此，SiC錠塊31係以線鋸而切片圖3所示之SiC錠塊11者之故，第一定向平面37係對應於錠塊11之第一定向平面13，而第二定向平面39係對應於錠塊11之第二定向平面15者。
並且，錠塊31係對於表面31a之垂線而言，而於第二定向平面39方向，具有偏離角α傾斜之c軸19，和正交於c軸19之c面21(參照圖3)。c面21係對於錠塊31之表面31a而言作為偏離角α傾斜。在此SiC錠塊31中，正交於短的第二定向平面39之伸長方向的方向則為c軸19之傾斜方向。
在貼著保護膠帶41於晶圓31之表面31a之後，如圖5(A)所示，將保護膠帶41側作為成下方而將晶圓31載置於切削裝置之夾盤60上，對於夾盤60之吸引保持部60a使負壓作用，如圖5(B)所示，以夾盤60吸附保持晶圓31，使晶圓31之背面31b露出。
並且，如圖6所示，使切削單元62之切削刀64，高速旋轉於箭頭A方向同時，切入於相當於晶圓31 之裝置範圍35a與外周剩餘範圍31c之邊界部的晶圓31之背面31b，再徐緩地使夾盤60旋轉於箭頭B方向同時，殘留所薄化之晶圓31之完成厚度之厚度，於背面31b形成如圖7(A)之環狀溝47。
如圖7(B)之剖面圖所示，因晶圓31之厚度t1係為700μm，而所薄化之晶圓31之完成厚度t2係為50μm之故，環狀溝47之深度係成為650μm。
在實施環狀溝形成步驟之後，以雷射加工裝置2的夾盤26吸引保持晶圓31，如圖8及圖9所示，晶圓31之第二定向平面39則呈排列於X軸方向地，使保持晶圓31之夾盤26旋轉。
即，如圖9所示，加以形成有偏離角α之方向Y1，換言之，正交於對於晶圓31之表面31a之垂線17而言存在有與c軸19之表面31a的交點19a之方向的方向，即，平行於第二定向平面39之箭頭A方向則呈排列於X軸方向地，使夾盤26旋轉。
經由此，沿著正交於形成有偏離角α之方向的方向A而加以掃描雷射束。換言之，正交於形成有偏離角α之方向Y1的A方向則成為夾盤26之加工傳送方向。
在本發明之晶圓的薄化方法中，將自集光器36所出射的雷射束之掃描方向，作成正交於加以形成有晶圓31之偏離角α之方向Y1之箭頭A方向者則為重要。
即，本發明之晶圓的薄化方法係有著發現對於經由將雷射束之掃描方向，設定為如上述之方向之時，自形成於晶圓31內部之改質層傳播的裂痕則沿著c面21非常長地伸長的點之特徵。
在本實施形態之晶圓的薄化方法中，首先，實施將對於由夾盤26所保持之晶圓31而言具有透過性之波長(例如，1064nm之波長)的雷射束之集光點，自SiC基板所成之晶圓31之環狀溝47內的第二面(背面)31b定位於相當於晶圓之完成厚度之位置之同時，相對性地移動集光點與晶圓31而照射雷射束於背面31b，形成平行於表面31a之改質層23及自改質層23沿著c面21而傳播之裂痕25而作為分離起點之分離起點形成步驟。
此分離起點形成步驟係包含有如圖9所示，於對於背面31b之垂線17而言，c軸19則偏離角α分傾斜，加以形成有偏離角α於c面21與背面31b之方向，即，正交於圖9之箭頭Y1方向之方向，即A方向，相對性地移動雷射束之集光點，如圖10所示，於晶圓31之環狀溝47內的內部，形成改質層43及自改質層43沿著c面21而傳播之裂痕45的改質層形成步驟，和如圖11所示，於形成有偏離角之方向，即Y軸方向，相對性地移動集光點，進行特定量指標傳送之指標步驟者。
如圖10及圖11所示，將改質層43直線狀地形成於X軸方向時，自改質層43之兩側沿著c面21而傳播有裂痕45而加以形成。在本實施形態之晶圓的薄化方 法中，包含計測自直線狀的改質層43傳播於c面21方向所形成之裂痕45的寬度，設定集光點之指標量的指標量設定步驟。
在指標量設定步驟中，如圖10所示，將自直線狀的改質層43傳播於c面方向而加以形成於改質層43的單側之裂痕45的寬度作為W1之情況，應作為指標之特定量W2係加以設定為W1以上2W1以下。
在此，分離起點形成步驟之理想實施形態之雷射加工條件，係如以下地加以設定。
光源：Nd：YAG脈衝雷射
波長：1064nm
反覆頻率：80kHz
平均輸出：3.2W
脈衝寬度：4ns
雷射光點口徑：10μm
集光透鏡之開口數(NA)：0.45
指標量：400μm
在上述之雷射加工條件中，在圖10中，自改質層43沿著c面21傳播之裂痕45的寬度W1則加以設定為略250μm，而指標量W2則加以設定為400μm。
但，雷射束之平均輸出係並非加以限定於3.2W者，而在本實施形態之加工方法中，將平均輸出設定為2W~4.5W而可得到良好的結果。平均輸出為2W之 情況，裂痕25之寬度W1係成為略100μm，而對於平均輸出4.5W之情況，裂痕25之寬度W1係成為略350μm。
對於平均輸出為不足2W之情況及較4.5W為大之情況，係無法於晶圓31之內部形成良好的改質層43之故，而所照射之雷射束的平均輸出係2W~4.5W之範圍內為佳，而在本實施形態中，將平均輸出3.2W之雷射束照射至晶圓31。在圖10中，自形成改質層43之集光點的背面31b之深度D1係設定為650μm。
如圖11所示，進行特定量指標同時，自晶圓31之全範圍的背面31b至深度D1之位置，複數之改質層43及自改質層43沿著c面21而延伸之裂痕45的形成則結束之後，實施賦予外力，自改質層43及裂痕45所成之分離起點，分離晶圓，將具有複數之裝置35於表面31a之晶圓，薄化為約50μm程度之晶圓薄化步驟。
此晶圓薄化步驟係例如，經由如圖12所示之按壓機構54而加以實施。按壓機構54係包含：經由內藏於柱狀體52內之移動機構而移動於上下方向的頭部56，和對於頭部56而言，如圖12(B)所示，旋轉於箭頭R方向之按壓構件58。
如圖12(A)所示，將按壓機構54定位於由夾盤26所保持之晶圓31的上方，如圖12(B)所示，按壓構件58則壓接於晶圓31之環狀溝47內的背面31b為止而降低頭部56。
在將按壓構件58壓接於晶圓31之背面31b 的狀態，將按壓構件58旋轉於箭頭R方向時，對於晶圓31係產生有扭應力，自加以形成有改質層43及裂痕45之分離起點，將晶圓31作加以斷裂，如圖13所示，而可將晶圓31分離成由夾盤26所保持之晶圓31A與晶圓31B者。
對於由夾盤26所保持之晶圓31A之背面的分離面49係成為殘存有改質層43與裂痕45之一部分者，如圖13及圖14所示，對於分離面49係加以形成有細微之凹凸。隨之，在本發明之晶圓的薄化方法中，實施研削晶圓31A之背面的分離面49而作為平坦化之研削步驟者為佳。
在此研削步驟中，如圖14所示，以研削裝置之夾盤68而藉由保護膠帶41，吸引保持晶圓31A，使分離面49露出。研削裝置之研削單元70係包含：經由馬達而加以旋轉驅動之心軸72，和加以固定於心軸72之前端的轉輪座74，和經由複數之螺絲78而可拆裝於轉輪座74地加以裝著之研削砂輪76。研削砂輪76係由環狀之轉輪基台80，和固定安裝於轉輪基台80之下端部外周之複數的研磨石82而加以構成。
在研削步驟中，將夾盤68，於以箭頭a所示之方向，例如以300rpm進行旋轉同時，將研削砂輪76，於以箭頭b所示之方向，例如以6000rpm進行旋轉同時，驅動研削單元傳送機構，使研削砂輪76之研磨石82接觸於晶圓31A之分離面49。
並且，將研削砂輪76，以特定之研削傳送速度(例如，0.1μm/s)，於下方進行特定量研削傳送之同時，研削晶圓31A之分離面49而做為平坦化。經由此，如圖15所示，晶圓31A之背面31b係加以除去殘存之改質層43及裂痕45而成為平坦面。
研削所薄化之晶圓31A之背面而作為平坦化之情況，係如將晶圓31A的背面進行1~5μm程度研削即可，而可將研磨石72的磨耗量抑制為4~25μm程度者。
研削步驟結束後之晶圓31A係如圖15所示，對應於裝置範圍35a之晶圓31A之背面則經由上述之晶圓薄化步驟而加以薄化，加以形成圓形凹部51，而圓形凹部51的底面51a則經由研削步驟而加以完成為平坦面。
對應於外周剩餘範圍之晶圓31A之背面係加以殘存而加以形成環狀之補強部53之故，加以防止晶圓31A之破損，操作處理則變為容易。另外，在圖13自晶圓31A所分離之晶圓31B係因可作為SiC基板而再利用之故，而為非常經濟性。
26‧‧‧夾盤
31A‧‧‧晶圓
31B‧‧‧晶圓
37‧‧‧第一定向平面
39‧‧‧第二定向平面
41‧‧‧保護膠帶
49‧‧‧分離面

Claims (2)

  1. 一種晶圓的薄化方法，係薄化具備於具有第一面，和與該第一面相反側的第二面，和自該第一面至該第二面之c軸，和正交於該c軸之c面的SiC基板之該第一面，加以形成有複數之裝置的裝置範圍與圍繞該裝置範圍之外周剩餘範圍之晶圓之晶圓的薄化方法，其特徵為具備：於對應於該裝置範圍與該外周剩餘範圍之邊界部之該第二面，殘留相當於所薄化之晶圓的完成厚度之厚度而形成環狀溝之環狀溝形成步驟，和將對於SiC基板而言具有透過性之波長的雷射束之集光點，自該第二面定位於相當於晶圓之完成厚度之位置之同時，相對性地移動該集光點與SiC基板而照射雷射束於該第二面，於相當於由該環狀溝所圍繞之晶圓的完成厚度之位置，形成改質層及自該改質層沿著c面而伸長之裂痕而作為分離起點之分離起點形成步驟，和實施該分離起點形成步驟之後，賦予外力而自該分離起點將具有該第二面之晶圓，自具有加以形成有複數之裝置的該第一面之晶圓分離，薄化具有該第一面之晶圓的晶圓薄化之同時，於對應於該外周剩餘範圍之位置，形成環狀之補強部之晶圓薄化步驟；該分離起點形成步驟係包含：對於該第二面之垂線而言，該c軸則偏離角分傾斜，對於與於該第二面與該c面之間加以形成有偏離角之第二方向正交之第一方向，相對 性地移動雷射束之集光點，形成伸長於第一方向之直線狀的改質層之改質層形成步驟，和相對性地移動該集光點於第二方向而進行特定量指標之指標步驟者。
  2. 如申請專利範圍第1項記載之晶圓的薄化方法，其中，更具備：在實施該晶圓薄化步驟之後，研削具有加以形成有複數的裝置之第一面的晶圓背面而進行平坦化之研削步驟。
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