JP6740986B2 - 炭化珪素半導体装置およびその製造方法 - Google Patents

炭化珪素半導体装置およびその製造方法 Download PDF

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JP6740986B2
JP6740986B2 JP2017166883A JP2017166883A JP6740986B2 JP 6740986 B2 JP6740986 B2 JP 6740986B2 JP 2017166883 A JP2017166883 A JP 2017166883A JP 2017166883 A JP2017166883 A JP 2017166883A JP 6740986 B2 JP6740986 B2 JP 6740986B2
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JP2019046909A (ja
JP2019046909A5 (enExample
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愛子 梶
愛子 梶
竹内　有一
有一 竹内
周平 箕谷
周平 箕谷
龍太 鈴木
龍太 鈴木
侑佑 山下
侑佑 山下
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Denso Corp
Toyota Motor Corp
Toyota Central R&D Labs Inc
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Denso Corp
Toyota Motor Corp
Toyota Central R&D Labs Inc
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Priority to JP2017166883A priority Critical patent/JP6740986B2/ja
Priority to PCT/JP2018/032005 priority patent/WO2019044922A1/ja
Priority to CN201880056697.0A priority patent/CN111149213B/zh
Publication of JP2019046909A publication Critical patent/JP2019046909A/ja
Publication of JP2019046909A5 publication Critical patent/JP2019046909A5/ja
Priority to US16/802,754 priority patent/US11201216B2/en
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Priority to US17/510,913 priority patent/US11735654B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/145—Emitter regions of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H10D62/153—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
JP2017166883A 2017-08-31 2017-08-31 炭化珪素半導体装置およびその製造方法 Active JP6740986B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2017166883A JP6740986B2 (ja) 2017-08-31 2017-08-31 炭化珪素半導体装置およびその製造方法
PCT/JP2018/032005 WO2019044922A1 (ja) 2017-08-31 2018-08-29 炭化珪素半導体装置およびその製造方法
CN201880056697.0A CN111149213B (zh) 2017-08-31 2018-08-29 碳化硅半导体装置及其制造方法
US16/802,754 US11201216B2 (en) 2017-08-31 2020-02-27 Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device
US17/510,913 US11735654B2 (en) 2017-08-31 2021-10-26 Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device

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JP2017166883A JP6740986B2 (ja) 2017-08-31 2017-08-31 炭化珪素半導体装置およびその製造方法

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JP7139596B2 (ja) * 2017-12-06 2022-09-21 富士電機株式会社 半導体装置及びその製造方法
WO2020004067A1 (ja) * 2018-06-25 2020-01-02 住友電気工業株式会社 炭化珪素半導体装置
JP7140148B2 (ja) * 2019-02-27 2022-09-21 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP7302286B2 (ja) * 2019-05-23 2023-07-04 富士電機株式会社 半導体装置
JP7272235B2 (ja) * 2019-10-30 2023-05-12 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP7451981B2 (ja) 2019-12-10 2024-03-19 富士電機株式会社 半導体装置
CN113497124B (zh) * 2020-04-07 2023-08-11 长鑫存储技术有限公司 半导体器件及其制造方法
DE112021005410T5 (de) * 2020-10-14 2023-07-27 Hitachi Energy Switzerland Ag SiC-Leistungshalbleiterbauelement mit Graben
JP7613670B2 (ja) 2021-03-19 2025-01-15 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
CN113964196B (zh) * 2021-10-20 2023-01-20 重庆平创半导体研究院有限责任公司 一种耗尽型功率半导体结构、串联结构和加工工艺
JP7746206B2 (ja) * 2022-03-23 2025-09-30 株式会社東芝 半導体装置
CN115117053A (zh) * 2022-07-06 2022-09-27 杭州电子科技大学 平面栅功率mosfet抗单粒子烧毁器件及制备方法
CN117810265B (zh) * 2024-02-28 2024-05-14 湖北九峰山实验室 一种宽禁带半导体沟槽mosfet器件及其制造方法
CN120640744B (zh) * 2025-08-13 2025-11-18 杭州谱析光晶半导体科技有限公司 一种自对准双栅极mosfet及其制造工艺

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US20200203482A1 (en) 2020-06-25
CN111149213A (zh) 2020-05-12
US11735654B2 (en) 2023-08-22
US20220045172A1 (en) 2022-02-10
JP2019046909A (ja) 2019-03-22
CN111149213B (zh) 2023-08-11
WO2019044922A1 (ja) 2019-03-07
US11201216B2 (en) 2021-12-14

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