JP6734909B2 - 蒸着装置及び有機電子デバイスの生産方法 - Google Patents
蒸着装置及び有機電子デバイスの生産方法 Download PDFInfo
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- JP6734909B2 JP6734909B2 JP2018225363A JP2018225363A JP6734909B2 JP 6734909 B2 JP6734909 B2 JP 6734909B2 JP 2018225363 A JP2018225363 A JP 2018225363A JP 2018225363 A JP2018225363 A JP 2018225363A JP 6734909 B2 JP6734909 B2 JP 6734909B2
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- 238000007740 vapor deposition Methods 0.000 title claims description 95
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 49
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- 239000010703 silicon Substances 0.000 claims description 27
- 239000011368 organic material Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 50
- 239000003990 capacitor Substances 0.000 description 32
- 239000010408 film Substances 0.000 description 30
- 230000006698 induction Effects 0.000 description 18
- 238000010586 diagram Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 14
- 230000020169 heat generation Effects 0.000 description 9
- 230000003071 parasitic effect Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 230000002411 adverse Effects 0.000 description 7
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000000696 magnetic material Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000036961 partial effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000003550 marker Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000011104 metalized film Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/04—Sources of current
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/06—Control, e.g. of temperature, of power
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
- General Induction Heating (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Inverter Devices (AREA)
Description
Claims (5)
- 有機材料を基板に製膜する蒸着装置であって、
少なくとも一部が導体で構成されている前記有機材料を収納する容器と、
前記容器を収容する真空チャンバーと、
前記真空チャンバーに接続された各種ケーブルを収納するスペースであって、前記真空チャンバーに隣接する枠体により領域を規定されたスペース(120)と、
前記容器の周囲に配置されているコイルと、
前記スペースに収納されて前記コイルに接続しているインバータ部と、
前記スペースの外に設置されて前記インバータ部にケーブルで接続している直流電源を備え、
前記インバータ部は、
前記コイルの一方の極のハイサイド側に第1トランジスタを有し、
前記コイルの前記一方の極のローサイド側に第2トランジスタを有する、蒸着装置。 - 前記インバータ部は、
前記コイルの他方の極のハイサイド側に第3トランジスタと、
前記コイルの前記他方の極のローサイド側に第4トランジスタとをさらに有する、請求項1記載の蒸着装置。 - 前記第1トランジスタ、前記第2トランジスタ、前記第3トランジスタ及び前記第4トランジスタのうち少なくとも1つは、シリコンパワーMOSFET、IGBT、GaNパワーFET又はSiCパワーMOSFETである、請求項2記載の蒸着装置。
- 前記コイルと前記インバータ部との間の距離が、前記インバータ部と前記直流電源との間の距離よりも短い、請求項1から3のいずれかに記載の蒸着装置。
- 有機材料を基板に製膜する蒸着装置を用いた有機電子デバイスの生産方法であって、
前記蒸着装置は、
少なくとも一部が導体で構成されている前記有機材料を収納する容器と、
前記容器を収容する真空チャンバーと、
前記真空チャンバーに接続された各種ケーブルを収納するスペースであって、前記真空チャンバーに隣接する枠体により領域を規定されたスペース(120)と、
前記容器の周囲に配置されているコイルと、
前記スペースに収納されて前記コイルに接続しているインバータ部と、
前記スペースの外に設置されて前記インバータ部にケーブルで接続している直流電源を備え、
前記インバータ部は、
前記コイルの一方の極のハイサイド側に第1トランジスタを有し、
前記コイルの前記一方の極のローサイド側に第2トランジスタを有するものであり、
前記インバータ部が、前記直流電源からの直流を交流に変換する変換ステップと、
前記コイルの前記一方の極から他方の極に電流が流れることで前記容器が加熱される第1加熱ステップと、
前記コイルの前記他方の極から前記一方の極に電流が流れることで前記容器が加熱される第2加熱ステップとを含む、有機電子デバイスの生産方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201980023277.7A CN111971411A (zh) | 2018-03-28 | 2019-02-26 | 蒸镀装置及有机电子器件的生产方法 |
PCT/JP2019/007301 WO2019187902A1 (ja) | 2018-03-28 | 2019-02-26 | 蒸着装置及び有機電子デバイスの生産方法 |
KR1020207030373A KR102391901B1 (ko) | 2018-03-28 | 2019-02-26 | 증착 장치 및 유기 전자 장치의 생산 방법 |
KR1020227013143A KR20220053700A (ko) | 2018-03-28 | 2019-02-26 | 증착 장치 및 유기 전자 장치의 생산 방법 |
US17/042,267 US20210013457A1 (en) | 2018-03-28 | 2019-02-26 | Vapor deposition apparatus and organic electronic device production method |
EP19774731.4A EP3822388A4 (en) | 2018-03-28 | 2019-02-26 | VAPOR DEPOSITION APPARATUS AND METHOD FOR MAKING AN ORGANIC ELECTRONIC DEVICE |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2018063368 | 2018-03-28 | ||
JP2018063368 | 2018-03-28 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2019173153A JP2019173153A (ja) | 2019-10-10 |
JP2019173153A5 JP2019173153A5 (ja) | 2020-04-02 |
JP6734909B2 true JP6734909B2 (ja) | 2020-08-05 |
Family
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Family Applications (4)
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JP2018225363A Active JP6734909B2 (ja) | 2018-03-28 | 2018-11-30 | 蒸着装置及び有機電子デバイスの生産方法 |
JP2018225364A Active JP6709273B2 (ja) | 2018-03-28 | 2018-11-30 | 蒸着装置 |
JP2018225361A Active JP6709271B2 (ja) | 2018-03-28 | 2018-11-30 | 蒸着装置及び有機電子デバイスの生産方法 |
JP2018225362A Active JP6709272B2 (ja) | 2018-03-28 | 2018-11-30 | 蒸着装置及び有機電子デバイスの生産方法 |
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JP2018225364A Active JP6709273B2 (ja) | 2018-03-28 | 2018-11-30 | 蒸着装置 |
JP2018225361A Active JP6709271B2 (ja) | 2018-03-28 | 2018-11-30 | 蒸着装置及び有機電子デバイスの生産方法 |
JP2018225362A Active JP6709272B2 (ja) | 2018-03-28 | 2018-11-30 | 蒸着装置及び有機電子デバイスの生産方法 |
Country Status (3)
Country | Link |
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US (1) | US20210013457A1 (ja) |
JP (4) | JP6734909B2 (ja) |
CN (1) | CN111971411A (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN114945702A (zh) * | 2019-12-02 | 2022-08-26 | 公益财团法人福冈县产业·科学技术振兴财团 | 蒸镀装置、升华纯化装置、有机电子器件的生产方法及升华纯化方法 |
JP2024022701A (ja) * | 2020-12-24 | 2024-02-21 | 公益財団法人福岡県産業・科学技術振興財団 | 誘導加熱装置、真空蒸着装置、局所加熱装置、局所計測装置、誘導加熱方法及び局所計測方法 |
Family Cites Families (16)
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JP3570083B2 (ja) * | 1996-05-27 | 2004-09-29 | 富士電機システムズ株式会社 | 底穴出湯式浮揚溶解装置 |
WO2002014575A1 (en) * | 2000-08-10 | 2002-02-21 | Nippon Steel Chemical Co., Ltd. | Method and device for producing organic el elements |
JP3932830B2 (ja) * | 2001-05-21 | 2007-06-20 | 富士ゼロックス株式会社 | 電磁誘導加熱用制御装置、電磁誘導加熱装置および画像形成装置 |
GB0213186D0 (en) * | 2002-06-08 | 2002-07-17 | Univ Dundee | Methods |
JP2004059992A (ja) * | 2002-07-29 | 2004-02-26 | Sony Corp | 有機薄膜形成装置 |
JP4558375B2 (ja) * | 2004-05-17 | 2010-10-06 | 株式会社アルバック | 有機材料用蒸発源及び有機蒸着装置 |
JP4476019B2 (ja) * | 2004-05-20 | 2010-06-09 | 東北パイオニア株式会社 | 成膜源、真空成膜装置、有機el素子の製造方法 |
JP4001296B2 (ja) * | 2005-08-25 | 2007-10-31 | トッキ株式会社 | 有機材料の真空蒸着方法およびその装置 |
EP1948840A1 (en) * | 2005-11-15 | 2008-07-30 | Galileo Vacuum Systems S.p.A. | Device and method for controlling the power supplied to vacuum vaporization sources of metals and other |
CN101658066B (zh) * | 2007-04-07 | 2012-09-05 | 应达公司 | 用于电感应加热、熔化和搅拌的具有脉冲调节器的电流反馈逆变器 |
CN201144277Y (zh) * | 2007-12-29 | 2008-11-05 | 杭州晶鑫镀膜包装有限公司 | 一种真空镀铝膜设备 |
US20130106374A1 (en) * | 2011-11-02 | 2013-05-02 | Alan R. Ball | Power supply controller and method therefor |
JP2013182966A (ja) * | 2012-03-01 | 2013-09-12 | Hitachi High-Technologies Corp | プラズマ処理装置及びプラズマ処理方法 |
ZA201305605B (en) * | 2012-07-26 | 2014-05-28 | Oss Man Services (Pty) Ltd | Reactor vessel,system and method for removing and recovering volatilizing contaminants from contaminated materials |
JP6070846B2 (ja) * | 2013-07-31 | 2017-02-01 | 富士電機株式会社 | 半導体装置の製造方法および半導体装置 |
DE102014112456B4 (de) * | 2014-08-29 | 2020-09-24 | Schott Ag | Vorrichtung und Verfahren zur Beheizung einer Schmelze |
-
2018
- 2018-11-30 JP JP2018225363A patent/JP6734909B2/ja active Active
- 2018-11-30 JP JP2018225364A patent/JP6709273B2/ja active Active
- 2018-11-30 JP JP2018225361A patent/JP6709271B2/ja active Active
- 2018-11-30 JP JP2018225362A patent/JP6709272B2/ja active Active
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2019
- 2019-02-26 CN CN201980023277.7A patent/CN111971411A/zh active Pending
- 2019-02-26 US US17/042,267 patent/US20210013457A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
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JP6709271B2 (ja) | 2020-06-10 |
US20210013457A1 (en) | 2021-01-14 |
CN111971411A (zh) | 2020-11-20 |
JP2019173153A (ja) | 2019-10-10 |
JP6709273B2 (ja) | 2020-06-10 |
JP6709272B2 (ja) | 2020-06-10 |
JP2019173154A (ja) | 2019-10-10 |
JP2019173151A (ja) | 2019-10-10 |
JP2019173152A (ja) | 2019-10-10 |
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