JP6714595B2 - Ｅｕｖマイクロリソグラフィのための投影レンズ、投影露光装置、及び投影露光方法 - Google Patents

Ｅｕｖマイクロリソグラフィのための投影レンズ、投影露光装置、及び投影露光方法 Download PDF

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JP6714595B2
JP6714595B2 JP2017533703A JP2017533703A JP6714595B2 JP 6714595 B2 JP6714595 B2 JP 6714595B2 JP 2017533703 A JP2017533703 A JP 2017533703A JP 2017533703 A JP2017533703 A JP 2017533703A JP 6714595 B2 JP6714595 B2 JP 6714595B2
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Prior art keywords
projection lens
mirror
mask
projection
displacement
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Japanese (ja)
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JP2017528775A (ja
JP2017528775A5 (enExample
Inventor
シュテファン アンドレ
シュテファン アンドレ
ダニエル ゴルディ
ダニエル ゴルディ
トラルフ グリュナー
トラルフ グリュナー
ヨハンネス ルオフ
ヨハンネス ルオフ
ノルベルト ヴァブラ
ノルベルト ヴァブラ
リカルダ シュナイダー
リカルダ シュナイダー
ソニヤ シュナイダー
ソニヤ シュナイダー
Original Assignee
カール・ツァイス・エスエムティー・ゲーエムベーハー
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Mounting And Adjusting Of Optical Elements (AREA)
  • Microscoopes, Condenser (AREA)
JP2017533703A 2014-09-15 2015-09-07 Ｅｕｖマイクロリソグラフィのための投影レンズ、投影露光装置、及び投影露光方法 Active JP6714595B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102014218474.6 2014-09-15
DE102014218474.6A DE102014218474A1 (de) 2014-09-15 2014-09-15 Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren für die EUV-Mikrolithographie
PCT/EP2015/070391 WO2016041805A1 (en) 2014-09-15 2015-09-07 Projection lens, projection exposure apparatus and projection exposure method for euv microlithography

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2020098462A Division JP7208953B2 (ja) 2014-09-15 2020-06-05 Ｅｕｖマイクロリソグラフィのための投影レンズ、投影露光装置、及び投影露光方法

Publications (3)

Publication Number Publication Date
JP2017528775A JP2017528775A (ja) 2017-09-28
JP2017528775A5 JP2017528775A5 (enExample) 2020-02-13
JP6714595B2 true JP6714595B2 (ja) 2020-06-24

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JP2017533703A Active JP6714595B2 (ja) 2014-09-15 2015-09-07 Ｅｕｖマイクロリソグラフィのための投影レンズ、投影露光装置、及び投影露光方法
JP2020098462A Active JP7208953B2 (ja) 2014-09-15 2020-06-05 Ｅｕｖマイクロリソグラフィのための投影レンズ、投影露光装置、及び投影露光方法

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Country Link
US (2) US10048592B2 (enExample)
EP (1) EP3195060B1 (enExample)
JP (2) JP6714595B2 (enExample)
KR (1) KR102469060B1 (enExample)
CN (2) CN111505909A (enExample)
DE (1) DE102014218474A1 (enExample)
TW (2) TWI714278B (enExample)
WO (1) WO2016041805A1 (enExample)

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DE102016205072A1 (de) * 2016-03-29 2017-03-16 Carl Zeiss Smt Gmbh Optisches System für die Mikrolithografie sowie Verfahren zum Betreiben eines optischen Systems für die Mikrolithografie
DE102016212477A1 (de) 2016-07-08 2018-01-11 Carl Zeiss Smt Gmbh Messverfahren und Messsystem zur interferometrischen Vermessung der Abbildungsqualität eines optischen Abbildungssystems
DE102016219330A1 (de) 2016-10-06 2018-04-12 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage und Verfahren zur Verringerung aus dynamischen Beschleunigungen herrührenden Deformationen von Komponenten der Projektionsbelichtungsanlage
WO2018134010A1 (en) * 2017-01-17 2018-07-26 Asml Netherlands B.V. Lithographic apparatus and method
DE102017216679A1 (de) * 2017-09-20 2019-03-21 Carl Zeiss Smt Gmbh Mikrolithographische Projektionsbelichtungsanlage
WO2019072703A1 (en) * 2017-10-11 2019-04-18 Asml Netherlands B.V. FLOW OF OPTIMIZATION OF PROCESS OF FORMATION OF REASONS
KR102374206B1 (ko) 2017-12-05 2022-03-14 삼성전자주식회사 반도체 장치 제조 방법
JP2019124796A (ja) * 2018-01-16 2019-07-25 キヤノン株式会社 結像光学系、画像投射装置およびカメラシステム
DE102019200696B4 (de) * 2019-01-21 2022-02-10 Carl Zeiss Smt Gmbh Vorrichtung, Verfahren und Computerprogram zum Bestimmen einer Position eines Elements auf einer fotolithographischen Maske
JP7357488B2 (ja) * 2019-09-04 2023-10-06 キヤノン株式会社 露光装置、および物品製造方法
CN111381431B (zh) * 2020-05-11 2021-04-13 江苏舜合物联网科技有限公司 投影画面跟随可卷曲屏幕同步升降或同步平移的实现方法
JP2022022912A (ja) * 2020-07-10 2022-02-07 キヤノン株式会社 露光装置および物品製造方法
CN113031201B (zh) * 2021-03-15 2022-02-11 中国科学院长春光学精密机械与物理研究所 一种在轨补偿主镜曲率半径误差影响的调整方法
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Also Published As

Publication number Publication date
KR102469060B1 (ko) 2022-11-22
US10591825B2 (en) 2020-03-17
KR20170053713A (ko) 2017-05-16
JP2017528775A (ja) 2017-09-28
TW201621470A (zh) 2016-06-16
TWI681258B (zh) 2020-01-01
JP7208953B2 (ja) 2023-01-19
CN107077074B (zh) 2020-04-10
US20170168399A1 (en) 2017-06-15
US20180364583A1 (en) 2018-12-20
CN111505909A (zh) 2020-08-07
EP3195060A1 (en) 2017-07-26
EP3195060B1 (en) 2018-09-05
WO2016041805A1 (en) 2016-03-24
JP2020149070A (ja) 2020-09-17
US10048592B2 (en) 2018-08-14
TWI714278B (zh) 2020-12-21
TW202004367A (zh) 2020-01-16
CN107077074A (zh) 2017-08-18
DE102014218474A1 (de) 2016-03-17

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