TWI681258B - 投影透鏡、投影曝光裝置、與ｅｕｖ微影的投影曝光方法 - Google Patents

投影透鏡、投影曝光裝置、與ｅｕｖ微影的投影曝光方法 Download PDF

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Publication number
TWI681258B
TWI681258B TW104130274A TW104130274A TWI681258B TW I681258 B TWI681258 B TW I681258B TW 104130274 A TW104130274 A TW 104130274A TW 104130274 A TW104130274 A TW 104130274A TW I681258 B TWI681258 B TW I681258B
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TW
Taiwan
Prior art keywords
projection lens
reticle
mirror
projection
displacement
Prior art date
Application number
TW104130274A
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English (en)
Chinese (zh)
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TW201621470A (zh
Inventor
史蒂芬 安德烈
丹尼爾 戈登
托拉夫 葛納
喬哈尼斯 勞夫
諾伯特 瓦伯拉
瑞卡達 舒納德
桑賈 舒納德
Original Assignee
德商卡爾蔡司Ｓｍｔ有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Mounting And Adjusting Of Optical Elements (AREA)
  • Microscoopes, Condenser (AREA)
TW104130274A 2014-09-15 2015-09-14 投影透鏡、投影曝光裝置、與ｅｕｖ微影的投影曝光方法 TWI681258B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102014218474.6A DE102014218474A1 (de) 2014-09-15 2014-09-15 Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren für die EUV-Mikrolithographie
DE102014218474.6 2014-09-15

Publications (2)

Publication Number Publication Date
TW201621470A TW201621470A (zh) 2016-06-16
TWI681258B true TWI681258B (zh) 2020-01-01

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TW104130274A TWI681258B (zh) 2014-09-15 2015-09-14 投影透鏡、投影曝光裝置、與ｅｕｖ微影的投影曝光方法
TW108134443A TWI714278B (zh) 2014-09-15 2015-09-14 投影透鏡、投影曝光裝置、與ｅｕｖ微影的投影曝光方法

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Country Link
US (2) US10048592B2 (enExample)
EP (1) EP3195060B1 (enExample)
JP (2) JP6714595B2 (enExample)
KR (1) KR102469060B1 (enExample)
CN (2) CN111505909A (enExample)
DE (1) DE102014218474A1 (enExample)
TW (2) TWI681258B (enExample)
WO (1) WO2016041805A1 (enExample)

Cited By (1)

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TWI714278B (zh) * 2014-09-15 2020-12-21 德商卡爾蔡司Ｓｍｔ有限公司 投影透鏡、投影曝光裝置、與ｅｕｖ微影的投影曝光方法

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DE102016205072A1 (de) * 2016-03-29 2017-03-16 Carl Zeiss Smt Gmbh Optisches System für die Mikrolithografie sowie Verfahren zum Betreiben eines optischen Systems für die Mikrolithografie
DE102016212477A1 (de) * 2016-07-08 2018-01-11 Carl Zeiss Smt Gmbh Messverfahren und Messsystem zur interferometrischen Vermessung der Abbildungsqualität eines optischen Abbildungssystems
DE102016219330A1 (de) * 2016-10-06 2018-04-12 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage und Verfahren zur Verringerung aus dynamischen Beschleunigungen herrührenden Deformationen von Komponenten der Projektionsbelichtungsanlage
WO2018134010A1 (en) * 2017-01-17 2018-07-26 Asml Netherlands B.V. Lithographic apparatus and method
DE102017216679A1 (de) * 2017-09-20 2019-03-21 Carl Zeiss Smt Gmbh Mikrolithographische Projektionsbelichtungsanlage
CN118169959A (zh) * 2017-10-11 2024-06-11 Asml荷兰有限公司 图案化过程的优化流程
KR102374206B1 (ko) 2017-12-05 2022-03-14 삼성전자주식회사 반도체 장치 제조 방법
JP2019124796A (ja) * 2018-01-16 2019-07-25 キヤノン株式会社 結像光学系、画像投射装置およびカメラシステム
DE102019200696B4 (de) * 2019-01-21 2022-02-10 Carl Zeiss Smt Gmbh Vorrichtung, Verfahren und Computerprogram zum Bestimmen einer Position eines Elements auf einer fotolithographischen Maske
JP7357488B2 (ja) * 2019-09-04 2023-10-06 キヤノン株式会社 露光装置、および物品製造方法
CN111381431B (zh) * 2020-05-11 2021-04-13 江苏舜合物联网科技有限公司 投影画面跟随可卷曲屏幕同步升降或同步平移的实现方法
JP2022022912A (ja) * 2020-07-10 2022-02-07 キヤノン株式会社 露光装置および物品製造方法
CN113031201B (zh) * 2021-03-15 2022-02-11 中国科学院长春光学精密机械与物理研究所 一种在轨补偿主镜曲率半径误差影响的调整方法
DE102022208204A1 (de) 2022-08-08 2023-08-31 Carl Zeiss Smt Gmbh Verfahren zur Kompensation von Abbildungsfehlern einer EUV-Projektionsbelichtungsanlage
DE102023130957A1 (de) * 2023-11-08 2025-05-08 Carl Zeiss Smt Gmbh Verfahren zum Bestimmen wenigstens eines Manipulatorfreiheitsgrads, Verfahren zum Definieren wenigstens eines virtuellen Manipulators, Verfahren zum Betrieb einer Projektionsbelichtungsanlage sowie Projektionsbelichtungsanlage

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Publication number Priority date Publication date Assignee Title
TWI714278B (zh) * 2014-09-15 2020-12-21 德商卡爾蔡司Ｓｍｔ有限公司 投影透鏡、投影曝光裝置、與ｅｕｖ微影的投影曝光方法

Also Published As

Publication number Publication date
US10591825B2 (en) 2020-03-17
US10048592B2 (en) 2018-08-14
CN107077074A (zh) 2017-08-18
JP7208953B2 (ja) 2023-01-19
TWI714278B (zh) 2020-12-21
US20180364583A1 (en) 2018-12-20
CN111505909A (zh) 2020-08-07
CN107077074B (zh) 2020-04-10
TW202004367A (zh) 2020-01-16
KR20170053713A (ko) 2017-05-16
JP6714595B2 (ja) 2020-06-24
DE102014218474A1 (de) 2016-03-17
JP2017528775A (ja) 2017-09-28
JP2020149070A (ja) 2020-09-17
TW201621470A (zh) 2016-06-16
KR102469060B1 (ko) 2022-11-22
US20170168399A1 (en) 2017-06-15
WO2016041805A1 (en) 2016-03-24
EP3195060B1 (en) 2018-09-05
EP3195060A1 (en) 2017-07-26

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