JP6707329B2 - 有機el表示装置 - Google Patents
有機el表示装置 Download PDFInfo
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- JP6707329B2 JP6707329B2 JP2015175628A JP2015175628A JP6707329B2 JP 6707329 B2 JP6707329 B2 JP 6707329B2 JP 2015175628 A JP2015175628 A JP 2015175628A JP 2015175628 A JP2015175628 A JP 2015175628A JP 6707329 B2 JP6707329 B2 JP 6707329B2
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Classifications
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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Description
本実施の形態では、本発明の一態様の表示装置の構成例について説明する。
以下では、本発明の一態様の表示装置の構成例について説明する。
図1(A)に、以下で説明する表示装置10の上面概略図を示す。表示装置10は、画素部11、回路12、回路13、回路14、端子部15a、端子部15b、複数の配線16a、複数の配線16b、及び複数の配線16c等を有する。
以下では、画素ユニット20が有する画素回路のより具体的な例について説明する。図3に、画素ユニット20の回路図の例を示す。図3では、図2で例示したように、1つの画素ユニット20につき信号線として機能する配線(配線52a等)が4本接続された場合の例を示している。
続いて、図1(A)で示した回路14の構成例について説明する。図7(A)に、回路14の構成の一例の回路図を示す。回路14は、m個(mは1以上の整数)の回路80(回路80_1乃至80_m)を有する。また回路14には配線83、配線84、複数の配線群53Sが電気的に接続されている。ここで、配線群53Sは、配線53a、配線53b、及び配線53cをそれぞれ1本以上含む。また、回路14はm個の出力端子86(出力端子86_1乃至86_m)が電気的に接続されている。各々の出力端子86は、回路14内の一つの回路80と電気的に接続する。
続いて、画素電極と各種配線との相対的な位置関係について説明する。
以下では、画素ユニット20のレイアウト例について説明する。
以下では、表示装置10の断面構成例について説明する。
図16は、表示装置10の断面概略図である。図16は、図1(A)中の切断線A1−A2に沿った断面を示している。また、画素部11においては、図14(B)中の切断線B1−B2に対応した断面を示している。
図17には、トランジスタの構成が異なる例を示している。
図18では、画素部11を折り曲げて使用する場合に適した表示装置の構成例を示す。
以下では、上記に示す各構成要素について説明する。
ここで、可撓性を有する表示装置を作製する方法について説明する。
本実施の形態では、本発明の一態様のタッチパネルについて説明する。
図19(A)は、タッチパネル505の斜視図である。また図19(B)は、図19(A)を展開した斜視概略図である。なお明瞭化のため、代表的な構成要素のみを示している。
本実施の形態では、本発明の一態様のタッチパネルの駆動方法の例について、図面を参照して説明する。
図20(A)は、相互容量方式のタッチセンサの構成を示すブロック図である。図20(A)では、パルス電圧出力回路601、電流検出回路602を示している。なお図20(A)では、パルス電圧が与えられる電極621、電流の変化を検知する電極622をそれぞれ、X1−X6、Y1−Y6のそれぞれ6本の配線として示している。また図20(A)は、電極621および電極622の間に形成される容量603を図示している。なお、電極621と電極622とはその機能を互いに置き換えてもよい。
本実施の形態では、本発明の一態様の電子機器及び照明装置について、図面を用いて説明する。
11 画素部
12 回路
13 回路
14 回路
15a 端子部
15b 端子部
16a 配線
16b 配線
16c 配線
20 画素ユニット
21a 画素
21b 画素
22 表示領域
30a 直線
30b 直線
30c 長方形
30d 長方形
31 画素電極
31a 画素電極
31b 画素電極
32a 画素電極
32b 画素電極
33a 画素電極
33b 画素電極
41a 画素回路
41b 画素回路
42a 画素回路
42b 画素回路
43a 画素回路
43b 画素回路
51 配線
51a 配線
51b 配線
52 配線
52a 配線
52b 配線
52c 配線
52d 配線
53S 配線群
53 配線
53a 配線
53b 配線
53c 配線
54 配線
55 配線
57 配線
60 表示素子
60a 表示素子
60b 表示素子
61 トランジスタ
62 トランジスタ
63 容量素子
64 トランジスタ
71a 副画素
71b 副画素
72a 副画素
72b 副画素
73a 副画素
73b 副画素
80 回路
81 トランジスタ
82 トランジスタ
83 配線
84 配線
85 端子
86 出力端子
91_1〜5 配線
92_1〜2 配線
93_1〜6 トランジスタ
94 容量素子
95 表示素子
96_1〜3 配線
97_1〜3 配線
98_1〜6 トランジスタ
101 基板
102 基板
211 絶縁層
212 絶縁層
213 絶縁層
214 絶縁層
215 スペーサ
216 絶縁層
220 接着層
221 絶縁層
222 EL層
223 電極
224a 光学調整層
224b 光学調整層
230a 構造物
230b 構造物
231 遮光層
232a 着色層
232b 着色層
241 FPC
242 FPC
243 接続層
244 IC
250 空間
251 トランジスタ
252 トランジスタ
253 導電層
260 封止材
261 接着層
262 接着層
501 表示部
503s 回路
505 タッチパネル
509 FPC
511 配線
519 端子部
570 基板
590 基板
591 電極
592 電極
594 配線
595 タッチセンサ
597 接着層
598 配線
599 接続層
601 パルス電圧出力回路
602 電流検出回路
603 容量
611 トランジスタ
612 トランジスタ
613 トランジスタ
621 電極
622 電極
901 筐体
902 筐体
903 表示部
904 表示部
905 マイクロフォン
906 スピーカ
907 操作キー
908 スタイラス
921 筐体
922 表示部
923 キーボード
924 ポインティングデバイス
7000 表示部
7001 表示部
7100 携帯電話機
7101 筐体
7103 操作ボタン
7104 外部接続ポート
7105 スピーカ
7106 マイク
7200 テレビジョン装置
7201 筐体
7203 スタンド
7211 リモコン操作機
7300 携帯情報端末
7301 筐体
7302 操作ボタン
7303 情報
7304 情報
7305 情報
7306 情報
7310 携帯情報端末
7320 携帯情報端末
7400 照明装置
7401 台部
7402 発光部
7403 操作スイッチ
7410 照明装置
7412 発光部
7420 照明装置
7422 発光部
7500 携帯情報端末
7501 筐体
7502 部材
7503 操作ボタン
7600 携帯情報端末
7601 筐体
7602 ヒンジ
7650 携帯情報端末
7651 非表示部
7700 携帯情報端末
7701 筐体
7703a ボタン
7703b ボタン
7704a スピーカ
7704b スピーカ
7705 外部接続ポート
7706 マイク
7709 バッテリ
7800 携帯情報端末
7801 バンド
7802 入出力端子
7803 操作ボタン
7804 アイコン
7805 バッテリ
8000 カメラ
8001 筐体
8002 表示部
8003 操作ボタン
8004 シャッターボタン
8005 結合部
8006 レンズ
8100 ファインダー
8101 筐体
8102 表示部
8103 ボタン
8200 ヘッドマウントディスプレイ
8201 装着部
8202 レンズ
8203 本体
8204 表示部
8205 ケーブル
8206 バッテリ
9700 自動車
9701 車体
9702 車輪
9703 ダッシュボード
9704 ライト
9710 表示部
9711 表示部
9712 表示部
9713 表示部
9714 表示部
9715 表示部
9721 表示部
9722 表示部
9723 表示部
Claims (2)
- 画素、第1の配線、第2の配線、及び第3の配線を有する有機EL表示装置であって、
前記画素は、第1の副画素、第2の副画素、及び第3の副画素を有し、
前記第1の副画素は、第1のトランジスタ及び第1の表示素子を有し、
前記第2の副画素は、第2のトランジスタ及び第2の表示素子を有し、
前記第3の副画素は、第3のトランジスタ及び第3の表示素子を有し、
前記第1の表示素子は、第1の画素電極を有し、
前記第2の表示素子は、第2の画素電極を有し、
前記第3の表示素子は、第3の画素電極を有し、
前記第1の配線は、前記第1のトランジスタのゲート、及び前記第2のトランジスタのゲートと電気的に接続し、
前記第2の配線は、前記第3のトランジスタのゲートと電気的に接続し、
前記第3の配線は、前記第1のトランジスタのソースまたはドレインの一方、及び前記第3のトランジスタのソースまたはドレインの一方と電気的に接続し、
前記第1の副画素と前記第2の副画素と前記第3の副画素は、ぞれぞれ異なる色を呈し、
前記第1の画素電極と前記第2の画素電極は、前記第1の配線が延伸する方向に並んで配置され、
前記第1の画素電極と前記第3の画素電極は、前記第1の配線が延伸する方向に並んで配置され、
前記第2の画素電極と前記第3の画素電極は、前記第3の配線が延伸する方向に並んで配置されている有機EL表示装置。 - 請求項1において、
平面視において、前記第1の画素電極の重心と前記第2の画素電極の重心とを通る直線と、前記第3の画素電極の重心とが重ならないことを特徴とする有機EL表示装置。
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Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20230044334A (ko) * | 2014-09-12 | 2023-04-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
JP6566289B2 (ja) * | 2014-11-26 | 2019-08-28 | Tianma Japan株式会社 | 表示デバイス及び電気光学装置並びに電気機器並びにメタルマスク並びに画素アレイ |
KR102465382B1 (ko) * | 2015-08-31 | 2022-11-10 | 삼성디스플레이 주식회사 | 표시장치 및 표시장치의 제조방법 |
KR102381647B1 (ko) * | 2015-10-29 | 2022-04-04 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
KR20180093001A (ko) | 2015-12-11 | 2018-08-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
KR102570950B1 (ko) * | 2015-12-28 | 2023-08-25 | 엘지디스플레이 주식회사 | 개인 몰입형 장치의 표시장치 |
KR102375685B1 (ko) | 2016-02-02 | 2022-03-18 | 삼성디스플레이 주식회사 | 플렉서블 디스플레이 장치 |
BR112018006898A2 (pt) * | 2016-03-17 | 2018-10-16 | Saint-Gobain Glass France | para-brisa com quebra-sol eletricamente controlável |
KR102473101B1 (ko) * | 2016-04-04 | 2022-12-01 | 티씨엘 차이나 스타 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 | 표시 장치 |
CN107275359B (zh) * | 2016-04-08 | 2021-08-13 | 乐金显示有限公司 | 有机发光显示装置 |
US9966033B2 (en) * | 2016-04-13 | 2018-05-08 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Detection device for display panel |
CN107367877B (zh) * | 2016-05-13 | 2020-12-11 | 上海新昇半导体科技有限公司 | 液晶显示器面板及其像素单元的制备方法 |
KR102646280B1 (ko) * | 2016-05-27 | 2024-03-12 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
CN106024584A (zh) * | 2016-05-27 | 2016-10-12 | 清华大学 | 半导体结构以及制备半导体结构的方法 |
KR20170143082A (ko) * | 2016-06-17 | 2017-12-29 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
TWI726006B (zh) * | 2016-07-15 | 2021-05-01 | 日商半導體能源研究所股份有限公司 | 顯示裝置、輸入輸出裝置、資料處理裝置 |
KR20180025431A (ko) * | 2016-08-30 | 2018-03-09 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR20180030365A (ko) | 2016-09-13 | 2018-03-22 | 삼성디스플레이 주식회사 | 표시 장치 |
US11024651B2 (en) | 2017-01-20 | 2021-06-01 | Sony Semiconductor Solutions Corporation | Display device and electronic device with microlens array and light emitting element substrates bonded by adhesive layer |
CN112133709B (zh) * | 2017-02-15 | 2023-05-19 | 朱夏青 | 显示装置 |
KR102216990B1 (ko) * | 2017-03-29 | 2021-02-22 | 도레이 카부시키가이샤 | 감광성 조성물, 경화막 및 유기 el 표시 장치 |
KR102357392B1 (ko) * | 2017-04-26 | 2022-02-03 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
JP6892576B2 (ja) * | 2017-04-28 | 2021-06-23 | 天馬微電子有限公司 | 表示装置 |
KR102479020B1 (ko) * | 2017-11-28 | 2022-12-19 | 삼성디스플레이 주식회사 | 표시 장치 |
KR20190083027A (ko) | 2018-01-02 | 2019-07-11 | 삼성디스플레이 주식회사 | 표시패널 및 그 제조방법 |
CN108807485B (zh) * | 2018-06-25 | 2020-12-29 | 武汉天马微电子有限公司 | 一种显示面板及显示装置 |
TWI677864B (zh) * | 2018-06-28 | 2019-11-21 | 友達光電股份有限公司 | 顯示裝置 |
CN109188816B (zh) * | 2018-10-26 | 2021-06-22 | 昆山龙腾光电股份有限公司 | 阵列基板及其驱动方法和液晶显示装置及其驱动方法 |
JP7149164B2 (ja) * | 2018-11-02 | 2022-10-06 | 株式会社ジャパンディスプレイ | 表示装置 |
US11009756B2 (en) * | 2018-11-05 | 2021-05-18 | Sharp Kabushiki Kaisha | Display device |
CN109638035B (zh) * | 2018-11-13 | 2021-02-26 | 武汉华星光电半导体显示技术有限公司 | 像素排列结构及有机发光二极管显示装置 |
KR20200062863A (ko) | 2018-11-27 | 2020-06-04 | 삼성전자주식회사 | 디스플레이 장치 및 제조 방법 |
KR20200066500A (ko) * | 2018-11-30 | 2020-06-10 | 삼성디스플레이 주식회사 | 표시장치 |
CN109742252B (zh) * | 2019-01-08 | 2020-12-29 | 京东方科技集团股份有限公司 | 一种显示面板及显示装置 |
KR20200102607A (ko) * | 2019-02-21 | 2020-09-01 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
KR20200110489A (ko) | 2019-03-13 | 2020-09-24 | 삼성디스플레이 주식회사 | 플렉시블 표시 장치와 그를 포함한 증강 현실 제공 장치 |
CN111863832B (zh) * | 2019-04-30 | 2024-04-09 | 成都辰显光电有限公司 | 显示面板及其制造方法、电子设备 |
KR20210008232A (ko) * | 2019-07-11 | 2021-01-21 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
CN210429261U (zh) * | 2019-09-12 | 2020-04-28 | 昆山国显光电有限公司 | 显示面板及显示装置 |
JP7474040B2 (ja) | 2019-10-07 | 2024-04-24 | JDI Design and Development 合同会社 | 自発光型表示パネル |
KR20210084733A (ko) * | 2019-12-27 | 2021-07-08 | 삼성디스플레이 주식회사 | 표시장치 |
TWM611365U (zh) * | 2020-01-22 | 2021-05-01 | 台灣愛司帝科技股份有限公司 | 顯示模組及其影像顯示器 |
KR20220086743A (ko) * | 2020-12-16 | 2022-06-24 | 삼성디스플레이 주식회사 | 표시 장치 |
US20230369344A1 (en) | 2022-05-13 | 2023-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
US20240038777A1 (en) | 2022-07-29 | 2024-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
Family Cites Families (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3373483B2 (ja) * | 1992-04-17 | 2003-02-04 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP3436248B2 (ja) * | 2000-11-09 | 2003-08-11 | 日本電気株式会社 | 液晶表示装置及びその製造方法並びにcf基板 |
SG118118A1 (en) | 2001-02-22 | 2006-01-27 | Semiconductor Energy Lab | Organic light emitting device and display using the same |
JP4226867B2 (ja) * | 2002-09-25 | 2009-02-18 | 株式会社 日立ディスプレイズ | 表示装置 |
JP2005352444A (ja) * | 2004-05-12 | 2005-12-22 | Sharp Corp | 液晶表示装置、カラーマネージメント回路、及び表示制御方法 |
US8355015B2 (en) * | 2004-05-21 | 2013-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device and electronic device including a diode electrically connected to a signal line |
JP4499110B2 (ja) * | 2004-10-14 | 2010-07-07 | シャープ株式会社 | レベルシフタ回路、駆動回路、および表示装置 |
JP2006235332A (ja) * | 2005-02-25 | 2006-09-07 | Sanyo Electric Co Ltd | 立体視用画像表示パネル及び立体画像表示装置 |
JP5613360B2 (ja) * | 2005-07-04 | 2014-10-22 | 株式会社半導体エネルギー研究所 | 表示装置、表示モジュール及び電子機器 |
US7898623B2 (en) * | 2005-07-04 | 2011-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device, electronic device and method of driving display device |
EP1917656B1 (en) * | 2005-07-29 | 2016-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Display device and driving method thereof |
JP2007102005A (ja) * | 2005-10-06 | 2007-04-19 | Funai Electric Co Ltd | 表示装置 |
US8149346B2 (en) * | 2005-10-14 | 2012-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
CN2852196Y (zh) * | 2005-12-06 | 2006-12-27 | 群康科技(深圳)有限公司 | 液晶显示器及其基板 |
US20080001525A1 (en) * | 2006-06-30 | 2008-01-03 | Au Optronics Corporation | Arrangements of color pixels for full color OLED |
EP1895545B1 (en) * | 2006-08-31 | 2014-04-23 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
KR101393638B1 (ko) * | 2006-10-24 | 2014-05-26 | 삼성디스플레이 주식회사 | 표시 장치 및 그의 구동 방법 |
JP5116359B2 (ja) * | 2007-05-17 | 2013-01-09 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
KR101627724B1 (ko) * | 2007-12-03 | 2016-06-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 |
JP2009169071A (ja) * | 2008-01-16 | 2009-07-30 | Sony Corp | 表示装置 |
RU2452989C1 (ru) * | 2008-02-27 | 2012-06-10 | Шарп Кабусики Кайся | Подложка активной матрицы, жидкокристаллическая панель, жидкокристаллическое дисплейное устройство, модуль жидкокристаллического дисплея и телевизионный приемник |
KR101354406B1 (ko) * | 2008-05-23 | 2014-01-22 | 엘지디스플레이 주식회사 | 액정표시장치 |
JP2010008523A (ja) * | 2008-06-25 | 2010-01-14 | Sony Corp | 表示装置 |
KR101499234B1 (ko) * | 2008-06-27 | 2015-03-05 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치, 그 제조 방법 및 이에 사용되는섀도우 마스크 |
US20120001839A1 (en) * | 2009-03-05 | 2012-01-05 | Sharp Kabushiki Kaisha | Active matrix substrate, liquid crystal panel, liquid crystal display device, liquid crystal display unit, and television receiver |
JP5126168B2 (ja) * | 2009-06-19 | 2013-01-23 | セイコーエプソン株式会社 | 有機el装置および電子機器 |
JP2011009093A (ja) * | 2009-06-26 | 2011-01-13 | Seiko Epson Corp | 有機el装置及び電子機器 |
TWI508037B (zh) * | 2009-09-10 | 2015-11-11 | Semiconductor Energy Lab | 半導體裝置和顯示裝置 |
EP2538271A4 (en) * | 2010-02-15 | 2013-08-21 | Sharp Kk | ACTIVE MATRIX SUBSTRATE, LIQUID CRYSTAL PANEL, LIQUID CRYSTAL DISPLAY DEVICE, TELEVISION RECEIVER |
KR20110129531A (ko) * | 2010-05-26 | 2011-12-02 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시장치의 화소배열구조 |
US8767136B2 (en) * | 2010-10-26 | 2014-07-01 | Sharp Kabushiki Kaisha | Display device |
JP2012242497A (ja) * | 2011-05-17 | 2012-12-10 | Japan Display East Co Ltd | 液晶表示装置 |
JP2013025141A (ja) * | 2011-07-22 | 2013-02-04 | Seiko Epson Corp | 画像処理装置、表示装置及び画像処理方法 |
JP5548173B2 (ja) * | 2011-08-31 | 2014-07-16 | 株式会社東芝 | 半導体基板及びその製造方法 |
KR101910340B1 (ko) * | 2011-10-12 | 2018-10-23 | 삼성디스플레이 주식회사 | 내로우 베젤을 갖는 액정표시장치 |
JP6076038B2 (ja) * | 2011-11-11 | 2017-02-08 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
KR20130055997A (ko) * | 2011-11-21 | 2013-05-29 | 삼성디스플레이 주식회사 | 입체 영상 표시 장치 |
TWI597552B (zh) * | 2012-01-20 | 2017-09-01 | 群康科技(深圳)有限公司 | 畫素結構 |
JP6214077B2 (ja) * | 2012-07-31 | 2017-10-18 | 株式会社Joled | 表示装置、表示装置の製造方法、電子機器および表示装置の駆動方法 |
JP2014095897A (ja) | 2012-10-12 | 2014-05-22 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
CN108550608B (zh) | 2012-10-30 | 2024-01-23 | 株式会社半导体能源研究所 | 发光面板、显示装置以及发光面板的制造方法 |
TWI757837B (zh) * | 2012-11-28 | 2022-03-11 | 日商半導體能源研究所股份有限公司 | 顯示裝置 |
TWI627483B (zh) * | 2012-11-28 | 2018-06-21 | 半導體能源研究所股份有限公司 | 顯示裝置及電視接收機 |
CN103123927B (zh) * | 2013-01-24 | 2015-05-06 | 昆山维信诺显示技术有限公司 | 用于oled显示屏的像素结构及其金属掩膜板 |
JP6486660B2 (ja) | 2013-11-27 | 2019-03-20 | 株式会社半導体エネルギー研究所 | 表示装置 |
KR20230044334A (ko) * | 2014-09-12 | 2023-04-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
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TW201614829A (en) | 2016-04-16 |
TW201941422A (zh) | 2019-10-16 |
US9525017B2 (en) | 2016-12-20 |
TWI672809B (zh) | 2019-09-21 |
JP2023130445A (ja) | 2023-09-20 |
JP2016206634A (ja) | 2016-12-08 |
TWI696284B (zh) | 2020-06-11 |
CN110544436B (zh) | 2021-12-07 |
US20170213851A1 (en) | 2017-07-27 |
US20180308866A1 (en) | 2018-10-25 |
KR102515379B1 (ko) | 2023-03-28 |
JP2020098791A (ja) | 2020-06-25 |
CN110544436A (zh) | 2019-12-06 |
CN106688028B (zh) | 2019-10-11 |
CN106688028A (zh) | 2017-05-17 |
WO2016038508A1 (en) | 2016-03-17 |
JP2022132358A (ja) | 2022-09-08 |
DE112015004166T5 (de) | 2017-05-24 |
US9954011B2 (en) | 2018-04-24 |
KR20170057252A (ko) | 2017-05-24 |
US10217772B2 (en) | 2019-02-26 |
US20160079333A1 (en) | 2016-03-17 |
KR20230044334A (ko) | 2023-04-03 |
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