JP6670749B2 - 構成可能なピンを備える三次元フラッシュｎｏｒメモリシステム - Google Patents

構成可能なピンを備える三次元フラッシュｎｏｒメモリシステム Download PDF

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Publication number
JP6670749B2
JP6670749B2 JP2016536215A JP2016536215A JP6670749B2 JP 6670749 B2 JP6670749 B2 JP 6670749B2 JP 2016536215 A JP2016536215 A JP 2016536215A JP 2016536215 A JP2016536215 A JP 2016536215A JP 6670749 B2 JP6670749 B2 JP 6670749B2
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Prior art keywords
die
interface
memory
pins
tsv
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Japanese (ja)
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JP2017502444A5 (enExample
JP2017502444A (ja
Inventor
ヒュー ヴァン トラン
ヒュー ヴァン トラン
フン クオック グエン
フン クオック グエン
マーク レイテン
マーク レイテン
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Silicon Storage Technology Inc
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Silicon Storage Technology Inc
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1045—Read-write mode select circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1057—Data output buffers, e.g. comprising level conversion circuits, circuits for adapting load
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/10—Aspects relating to interfaces of memory device to external buses
    • G11C2207/105—Aspects related to pads, pins or terminals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Read Only Memory (AREA)
JP2016536215A 2013-12-02 2014-11-06 構成可能なピンを備える三次元フラッシュｎｏｒメモリシステム Active JP6670749B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/094,595 US20150155039A1 (en) 2013-12-02 2013-12-02 Three-Dimensional Flash NOR Memory System With Configurable Pins
US14/094,595 2013-12-02
PCT/US2014/064381 WO2015084534A1 (en) 2013-12-02 2014-11-06 Three-dimensional flash nor memory system with configurable pins

Publications (3)

Publication Number Publication Date
JP2017502444A JP2017502444A (ja) 2017-01-19
JP2017502444A5 JP2017502444A5 (enExample) 2017-09-28
JP6670749B2 true JP6670749B2 (ja) 2020-03-25

Family

ID=52001074

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016536215A Active JP6670749B2 (ja) 2013-12-02 2014-11-06 構成可能なピンを備える三次元フラッシュｎｏｒメモリシステム

Country Status (7)

Country Link
US (2) US20150155039A1 (enExample)
EP (1) EP3078028A1 (enExample)
JP (1) JP6670749B2 (enExample)
KR (1) KR101931419B1 (enExample)
CN (1) CN105793928B (enExample)
TW (1) TWI550926B (enExample)
WO (1) WO2015084534A1 (enExample)

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Also Published As

Publication number Publication date
EP3078028A1 (en) 2016-10-12
WO2015084534A1 (en) 2015-06-11
KR101931419B1 (ko) 2018-12-20
CN105793928B (zh) 2020-12-25
TW201532326A (zh) 2015-08-16
CN105793928A (zh) 2016-07-20
KR20160094423A (ko) 2016-08-09
US20150155039A1 (en) 2015-06-04
TWI550926B (zh) 2016-09-21
US20170323682A1 (en) 2017-11-09
JP2017502444A (ja) 2017-01-19
US10373686B2 (en) 2019-08-06

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