JP6660875B2 - 熱可塑性物質をマイクロ波エネルギーで硬化させる方法 - Google Patents
熱可塑性物質をマイクロ波エネルギーで硬化させる方法 Download PDFInfo
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Description
選択された基板上に可溶性形態での熱可塑性物質を堆積させる工程と、
膜をソフトベークして残留溶媒を除去する工程と、
この熱可塑性物質のガラス転移温度Tgより100℃低い温度以下の温度で、20〜120分間、VFMにより膜を硬化させる工程と
を含む。
本発明の別の態様によれば、マイクロ電子デバイスを作る方法は、
集積回路を上に載せた半導体ウエハを準備する工程と、
半導体ウエハ上に可溶性形態での熱可塑性膜を堆積させる工程と、
膜をソフトベークして残留溶媒を除去する工程と、
熱可塑性物質のガラス転移温度Tgより100℃低い温度以下の温度で、20〜120分間、VFMにより膜を硬化させる工程と
を含む。
上に機能集積回路を有する半導体と、
その上に塗布された実質的に高密度で、300〜400℃の範囲のTgを有する熱可塑性コーティング部と
を備えている。
本明細書に添付され本明細書の一部を形成する図面は、本発明の特定の態様を描写するために含まれている。本発明のより明らかな概念、および、本発明で提供されるシステムの構成要素と作用とのより明らかな概念は、図面で示された例示的な、したがって非限定的な実施形態を参照することにより、より容易に明らかになるが、この図面中では、同様の参照符号は(2つ以上の図中で現れる場合には)同じ部材を示す。図面中の特徴は必ずしも原寸に比例していない。
PI 2611膜を、175℃および200℃で5から120分の範囲の時間、VFM硬化させた。樹脂をシリコンウエハ上に4000rpmでスピンコートして、厚さ7μmの膜を得、続いて膜を、130℃で2分間ソフトベークし、硬化前に残留溶媒を除去した。図2は、これらの標本のヤング率を、オーブン硬化された標本(350℃と400℃)と比較して示す。200℃で60分硬化させた後に、この係数は急上昇し、この時点で、この係数は従来のオーブン中で硬化された材料の係数よりも実際高いという驚くべき観察がなされた。備考:係数は、基板の影響を最小限にするために、100〜200nmの厚さに関するナノインデンテーション方法により計測した。
(例)
図3は、上述の例中で記載されたBPDA−PPD膜の硬度を示す。この場合も、硬化時間約60分で激しい上昇が見られ、この時点で、硬度は、350℃のオーブン硬化により生成されたものの硬度と同等である。
(例)
図4は、200℃でのVFM硬化によるイミド化のパーセントを、FTIRで測定し、時間に対する関数として示す図である。イミド化は20分後に約80%が完了し、60分から120分の間に小さな変遷があるが、60分後に本質的に完了することがわかる。
さらに、Tg未満での低いマイクロ波硬化温度と、パッケージングまたは組み立てにおいて使用される他の任意の処理工程によってみられる最高温度との間の差は、ここでは50℃以下となる。この低い温度の範囲での逸脱は、従来のオーブン硬化においてみられる係数およびCTEに関する時間と温度との強い効果をほぼ取り除くが、これについては、M.T. Pottiger and J.C. Coburn, "Modeling Stresses in Polyimide Films", Mat. Res. Soc. Symp. Proc., Vol 308, 527-534 (1993) に記載されている通りである。
(例)
本発明による方法を利用する他のポリマーの設計では、図6の一般的なクラスに示唆されるような二官能性ポリアミック酸部分と、図7に示唆されるようなR1およびR2を有する二官能性アミンとを組み合わせることができる。硬化されると、高い配向能力を備え、線形で、共役し、かつ剛性を有するポリイミド膜を生成するこれ以外の多くの可能性も存在する。
BTDA−PPDに関して観察された配向または結晶化は、相転移の様式で(図2〜4参照)強く同期していると思われることから、出発材料中の鎖の長さ分布を小さくすることによって、MW照射における他のポリイミドおよびこれ以外の熱可塑性物質における高い配向レベルを誘導することが可能であるはずである。熱可塑性物質の多分散指数(PDI)を小さくすることは、サイズ排除クロマトグラフィーなどの分離技術を用いることによって、または、出発材料の形成における熱可塑性物質のエンドキャップ反応の初期形成を制限することによって行われうる。これらの方法により、例えば、ポリオレフィン、ポリビニル、ポリカーボネートおよびアクリロニトリルなどの、硬度およびCTEが調節可能である点が有利であるはるかに広い選択範囲でのポリイミドおよびこれ以外の熱可塑性物質の機械特性を高めることが可能であるべきである。この選択的設計の能力は、標準的な熱硬化技術を使用した場合には、明らかにあり得ない。
VFM処理は、キャビティおよび加工対象品のサイズおよび形状、基板のタイプなどの変数に基づいて、当業者が特別な周波数範囲、掃引速度などを選択することができる、本質的に柔軟性を有する方法であることが理解されることになろう。ある選択された帯域幅(通常、中心周波数の±5%または±10%)に亘って周波数を掃引することは、均一性を向上させるのみならず、アーク放電およびこれ以外の加工対象品中の電子工学部品に対して悪影響を及ぼす効果を防ぐことは周知である。したがって、出願人は、中心周波数の少なくとも±5%、より好ましくは±10%の帯域幅に亘って、周波数を掃引することを好む。
Claims (8)
- 選択された基板上に、制御された配向を備えたポリイミド膜を作製する方法であって、
基板上に可溶性形態のポリイミドを堆積させて膜を形成する工程と、
前記膜をソフトベークして残留溶媒を除去する工程と、
前記ポリイミドのガラス転移温度Tgより少なくとも100℃低い温度で、20〜120分間、可変周波数マイクロ波(VFM)により前記膜を硬化させる工程と
を含み、
前記ポリイミドは3,3’,4,4’−ビフェニルテトラカルボン酸二無水物−p−フェニレンジアミン(BPDA−PPD)を含み、前記VFM硬化は175〜200℃の温度で実施され、
前記硬化させる工程を、前記膜の熱膨張率が前記基板の熱膨張率と一致するまで行う方法。 - 前記VFM硬化は、選択された中心周波数の少なくとも±5%の帯域幅に亘りマイクロ波力を掃引的に印加する工程を含む、請求項1に記載の方法。
- 前記基板は、集積回路を上に載せた半導体ウエハを備える、請求項1に記載の方法。
- 前記ポリイミドの多分散指数(PDI)を低減させる工程をさらに含む、請求項1に記載の方法。
- 前記PDIの低減は、サイズ排除クロマトグラフィーを含む分離技術を用いること、または、前記ポリイミドの出発材料の形成の間のポリイミドのエンドキャップ反応の初期化を制限することにより行われる、請求項4に記載の方法。
- 選択された基板上に、制御された配向を備えたポリイミド膜を作製することにより、マイクロ電子デバイスを作る方法であって、
集積回路を上に載せた半導体ウエハを準備する工程と、
前記半導体ウエハ上に可溶性形態のポリイミド膜を堆積させて膜を形成する工程と、
前記膜をソフトベークして残留溶媒を除去する工程と、
前記ポリイミドのガラス転移温度Tgより少なくとも100℃低い温度で、20〜120分間、可変周波数マイクロ波(VFM)により前記膜を硬化させる工程と
を含み、
前記ポリイミドは3,3’,4,4’−ビフェニルテトラカルボン酸二無水物−p−フェニレンジアミン(BPDA−PPD)を含み、前記VFM硬化は175〜200℃の温度で実施され、
前記硬化させる工程を、前記膜の熱膨張率が前記半導体ウエハの熱膨張率と一致するまで行う方法。 - 前記VFM硬化は、選択された中心周波数の少なくとも±5%の帯域幅に亘りマイクロ波力を掃引的に印加する工程を含む、請求項6に記載の方法。
- 前記集積回路は、幅100〜10nmの機能回路特徴部を備える、請求項6に記載の方法。
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