JP6644456B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6644456B2
JP6644456B2 JP2012278136A JP2012278136A JP6644456B2 JP 6644456 B2 JP6644456 B2 JP 6644456B2 JP 2012278136 A JP2012278136 A JP 2012278136A JP 2012278136 A JP2012278136 A JP 2012278136A JP 6644456 B2 JP6644456 B2 JP 6644456B2
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field plate
gate field
gate
semiconductor device
film
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JP2013131758A5 (https=
JP2013131758A (ja
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アレクセイ・コウディモフ
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パワー・インテグレーションズ・インコーポレーテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/121—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2012278136A 2011-12-21 2012-12-20 半導体装置 Active JP6644456B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/333,843 US10002957B2 (en) 2011-12-21 2011-12-21 Shield wrap for a heterostructure field effect transistor
US13/333,843 2011-12-21

Publications (3)

Publication Number Publication Date
JP2013131758A JP2013131758A (ja) 2013-07-04
JP2013131758A5 JP2013131758A5 (https=) 2016-02-12
JP6644456B2 true JP6644456B2 (ja) 2020-02-12

Family

ID=47749594

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012278136A Active JP6644456B2 (ja) 2011-12-21 2012-12-20 半導体装置

Country Status (5)

Country Link
US (3) US10002957B2 (https=)
EP (1) EP2608271B1 (https=)
JP (1) JP6644456B2 (https=)
CN (1) CN103178106B (https=)
TW (1) TWI496286B (https=)

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Also Published As

Publication number Publication date
CN103178106A (zh) 2013-06-26
TWI496286B (zh) 2015-08-11
EP2608271B1 (en) 2016-10-19
US20190214493A1 (en) 2019-07-11
US20130161692A1 (en) 2013-06-27
CN103178106B (zh) 2016-10-05
US10002957B2 (en) 2018-06-19
US10199488B2 (en) 2019-02-05
EP2608271A1 (en) 2013-06-26
TW201342594A (zh) 2013-10-16
US20170098704A1 (en) 2017-04-06
JP2013131758A (ja) 2013-07-04

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