JP6620176B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6620176B2
JP6620176B2 JP2018012842A JP2018012842A JP6620176B2 JP 6620176 B2 JP6620176 B2 JP 6620176B2 JP 2018012842 A JP2018012842 A JP 2018012842A JP 2018012842 A JP2018012842 A JP 2018012842A JP 6620176 B2 JP6620176 B2 JP 6620176B2
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JP
Japan
Prior art keywords
light receiving
light
light emitting
receiving element
emitting element
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Application number
JP2018012842A
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English (en)
Japanese (ja)
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JP2019133994A5 (enExample
JP2019133994A (ja
Inventor
淳史 黒羽
淳史 黒羽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aoi Electronics Co Ltd
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Aoi Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aoi Electronics Co Ltd filed Critical Aoi Electronics Co Ltd
Priority to JP2018012842A priority Critical patent/JP6620176B2/ja
Priority to KR1020207018716A priority patent/KR102459822B1/ko
Priority to CN201880087698.1A priority patent/CN111656540B/zh
Priority to PCT/JP2018/047287 priority patent/WO2019146339A1/ja
Priority to TW108103065A priority patent/TWI785195B/zh
Publication of JP2019133994A publication Critical patent/JP2019133994A/ja
Publication of JP2019133994A5 publication Critical patent/JP2019133994A5/ja
Application granted granted Critical
Publication of JP6620176B2 publication Critical patent/JP6620176B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Bipolar Transistors (AREA)
  • Noodles (AREA)
JP2018012842A 2018-01-29 2018-01-29 半導体装置 Active JP6620176B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2018012842A JP6620176B2 (ja) 2018-01-29 2018-01-29 半導体装置
KR1020207018716A KR102459822B1 (ko) 2018-01-29 2018-12-21 반도체 장치
CN201880087698.1A CN111656540B (zh) 2018-01-29 2018-12-21 半导体装置
PCT/JP2018/047287 WO2019146339A1 (ja) 2018-01-29 2018-12-21 半導体装置
TW108103065A TWI785195B (zh) 2018-01-29 2019-01-28 半導體裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018012842A JP6620176B2 (ja) 2018-01-29 2018-01-29 半導体装置

Publications (3)

Publication Number Publication Date
JP2019133994A JP2019133994A (ja) 2019-08-08
JP2019133994A5 JP2019133994A5 (enExample) 2019-09-19
JP6620176B2 true JP6620176B2 (ja) 2019-12-11

Family

ID=67395853

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018012842A Active JP6620176B2 (ja) 2018-01-29 2018-01-29 半導体装置

Country Status (5)

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JP (1) JP6620176B2 (enExample)
KR (1) KR102459822B1 (enExample)
CN (1) CN111656540B (enExample)
TW (1) TWI785195B (enExample)
WO (1) WO2019146339A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7189994B2 (ja) * 2021-04-16 2022-12-14 アオイ電子株式会社 半導体装置およびその製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6132535A (ja) * 1984-07-25 1986-02-15 Sanyo Electric Co Ltd センサの製造方法
JPH06204508A (ja) * 1992-12-28 1994-07-22 Canon Inc 光学式検出装置
JP3573400B2 (ja) * 1997-07-16 2004-10-06 シャープ株式会社 光学式入力装置
JP3684823B2 (ja) * 1998-03-26 2005-08-17 松下電工株式会社 半導体リレー
JP3819664B2 (ja) * 2000-03-08 2006-09-13 シャープ株式会社 光結合素子
JP4812189B2 (ja) * 2001-06-15 2011-11-09 オリンパス株式会社 光学式検出装置
EP1376960A1 (en) 2002-06-29 2004-01-02 Deutsche Thomson-Brandt Gmbh Data link layer device with two transmission modes for a serial communication bus
JP2004063764A (ja) * 2002-07-29 2004-02-26 Toshiba Corp 光結合半導体装置、およびその製造方法
JP2005038956A (ja) * 2003-07-17 2005-02-10 Matsushita Electric Ind Co Ltd 光部品とその製造方法
JP4021382B2 (ja) * 2003-07-28 2007-12-12 オリンパス株式会社 光学式エンコーダ及びその製造方法並びに光学レンズモジュール
JP4418278B2 (ja) * 2004-03-30 2010-02-17 オリンパス株式会社 光学式エンコーダ及びその製造方法
JP5381280B2 (ja) * 2009-04-23 2014-01-08 オムロン株式会社 光結合装置
KR101069197B1 (ko) * 2009-09-25 2011-09-30 전자부품연구원 발광 및 수광 소자가 일체로 형성된 패키지 모듈
WO2013190871A1 (ja) * 2012-06-20 2013-12-27 アオイ電子株式会社 光源一体型光センサ
EP2860497B2 (de) * 2013-10-09 2019-04-10 SICK STEGMANN GmbH Optoelektronischer Sensor und Verfahren zur Herstellung eines solchen
JP2015095584A (ja) * 2013-11-13 2015-05-18 ローム株式会社 光学装置、光学装置の製造方法
JP2015177052A (ja) * 2014-03-14 2015-10-05 株式会社東芝 光結合装置
JP6689817B2 (ja) * 2014-07-25 2020-04-28 ヘプタゴン・マイクロ・オプティクス・プライベート・リミテッドＨｅｐｔａｇｏｎ Ｍｉｃｒｏ Ｏｐｔｉｃｓ Ｐｔｅ． Ｌｔｄ． 互いに光学的に分離された領域を有するイメージセンサを含む光電子モジュール

Also Published As

Publication number Publication date
TW201941447A (zh) 2019-10-16
CN111656540B (zh) 2023-06-13
KR102459822B1 (ko) 2022-10-26
CN111656540A (zh) 2020-09-11
TWI785195B (zh) 2022-12-01
KR20200090239A (ko) 2020-07-28
JP2019133994A (ja) 2019-08-08
WO2019146339A1 (ja) 2019-08-01

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