JP6617902B2 - 高q mems共振子 - Google Patents
高q mems共振子 Download PDFInfo
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- JP6617902B2 JP6617902B2 JP2018509738A JP2018509738A JP6617902B2 JP 6617902 B2 JP6617902 B2 JP 6617902B2 JP 2018509738 A JP2018509738 A JP 2018509738A JP 2018509738 A JP2018509738 A JP 2018509738A JP 6617902 B2 JP6617902 B2 JP 6617902B2
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- 229910052751 metal Inorganic materials 0.000 claims description 90
- 239000002184 metal Substances 0.000 claims description 90
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 79
- 229910052710 silicon Inorganic materials 0.000 claims description 79
- 239000010703 silicon Substances 0.000 claims description 79
- 239000010410 layer Substances 0.000 description 171
- 239000010408 film Substances 0.000 description 26
- 238000004519 manufacturing process Methods 0.000 description 15
- 239000010409 thin film Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02433—Means for compensation or elimination of undesired effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02433—Means for compensation or elimination of undesired effects
- H03H2009/0244—Anchor loss
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H2009/02488—Vibration modes
- H03H2009/02496—Horizontal, i.e. parallel to the substrate plane
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H2009/155—Constructional features of resonators consisting of piezoelectric or electrostrictive material using MEMS techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H2009/241—Bulk-mode MEMS resonators
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
本出願は、引用をもってその全体が本願明細書に明確に組み込まれるものとする「高Q MEMS共振子(MEMS RESONATOR WITH HIGH QUALITY FACTOR)」と題する、2015年5月27日に出願された米国特許出願第14/722,323号の利益を主張する。
210 シリコン層
212、216、416 圧電層(単数または複数)
214A、214B 第1金属層(単数または複数)
218A、218B 第2金属層(単数または複数)
220 電源
Claims (15)
- 面内振動モードで振動するMEMS共振子であって、
第1表面と前記第1表面の反対側の第2表面とを有するシリコン層と、
前記シリコン層の前記第1表面の上方に配設された少なくとも1つの金属層および前記シリコン層の前記第2表面の下方に配設された少なくとも1つの対応する金属層と、
前記シリコン層の前記第1表面の上方に配設された圧電層および前記シリコン層の前記第2表面の下方に配設された対応する圧電層と、
を備え、
前記少なくとも1つの金属層は、前記圧電層が間に配設された一対の第1金属層を含み、
前記少なくとも1つの対応する金属層は、前記対応する圧電層が間に配設された一対の第2金属層を含む、MEMS共振子。 - 前記少なくとも1つの金属層および前記少なくとも1つの対応する金属層は前記シリコン層について互いに対称に配設され、前記圧電層および前記対応する圧電層は前記シリコン層について互いに対称に配設される、請求項1に記載のMEMS共振子。
- 前記一対の第1金属層および前記圧電層は前記一対の第2金属層および前記対応する圧電層に対して前記シリコン層について対称に配設される、請求項1に記載のMEMS共振子。
- 前記MEMS共振子を作動させるために、前記一対の第1金属層は電源に電気的に結合される、請求項1に記載のMEMS共振子。
- 前記一対の第2金属層は前記電源に電気的に結合される、請求項4に記載のMEMS共振子。
- 前記一対の第2金属層は前記電源から電気的に絶縁される、請求項4に記載のMEMS共振子。
- 前記圧電層は前記対応する圧電層の厚さにほぼ等しい厚さを備える、請求項1に記載のMEMS共振子。
- 前記一対の第1金属層の各々は前記一対の第2金属層のそれぞれの厚さにほぼ等しい厚さを備える、請求項7に記載のMEMS共振子。
- 前記圧電層は前記対応する圧電層の厚さにほぼ等しい厚さを備える、請求項1に記載のMEMS共振子。
- 前記少なくとも1つの金属層は前記少なくとも1つの対応する金属層の厚さにほぼ等しい厚さを備える、請求項9に記載のMEMS共振子。
- 前記シリコン層は5マイクロメートル以上30マイクロメートル以下の厚さを備える、請求項1に記載のMEMS共振子。
- 面内振動モードで振動するMEMS共振子であって、
第1表面と前記第1表面の反対側の第2表面とを有するシリコン層と、
前記シリコン層の前記第1表面の上方に配設された一対の第1金属層と、
前記一対の第1金属層の間に配設された第1圧電層と、
前記シリコン層の前記第2表面の下方に前記一対の第1金属層に対して対称に配設された一対の第2金属層と、
前記一対の第2金属層の間に配設された第2圧電層と、
を備えたMEMS共振子。 - 前記MEMS共振子を作動させるために、前記一対の第1金属層は電源に電気的に結合される、請求項12に記載のMEMS共振子。
- 前記一対の第2金属層は前記電源から電気的に絶縁される、請求項13に記載のMEMS共振子。
- 前記シリコン層は5マイクロメートル以上30マイクロメートル以下の厚さを備える、請求項12に記載のMEMS共振子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/722,323 | 2015-05-27 | ||
US14/722,323 US20160352307A1 (en) | 2015-05-27 | 2015-05-27 | Mems resonator with high quality factor |
PCT/US2016/033929 WO2016191425A1 (en) | 2015-05-27 | 2016-05-24 | Mems resonator with high quality factor |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019204095A Division JP7029114B2 (ja) | 2015-05-27 | 2019-11-11 | 高q mems共振子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018516028A JP2018516028A (ja) | 2018-06-14 |
JP6617902B2 true JP6617902B2 (ja) | 2019-12-11 |
Family
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Family Applications (2)
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JP2018509738A Active JP6617902B2 (ja) | 2015-05-27 | 2016-05-24 | 高q mems共振子 |
JP2019204095A Active JP7029114B2 (ja) | 2015-05-27 | 2019-11-11 | 高q mems共振子 |
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JP2019204095A Active JP7029114B2 (ja) | 2015-05-27 | 2019-11-11 | 高q mems共振子 |
Country Status (4)
Country | Link |
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US (2) | US20160352307A1 (ja) |
JP (2) | JP6617902B2 (ja) |
CN (1) | CN107534430B (ja) |
WO (1) | WO2016191425A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022266783A1 (zh) * | 2021-06-21 | 2022-12-29 | 天津大学 | 压电mems执行器及其形成方法和运行方法 |
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JPS60126907A (ja) * | 1983-12-12 | 1985-07-06 | Nippon Telegr & Teleph Corp <Ntt> | 単一応答複合圧電振動素子 |
JP3531522B2 (ja) * | 1999-04-19 | 2004-05-31 | 株式会社村田製作所 | 圧電共振子 |
JP2001016068A (ja) | 1999-06-30 | 2001-01-19 | Kyocera Corp | 圧電共振子 |
JP2006203304A (ja) * | 2005-01-18 | 2006-08-03 | Hitachi Media Electoronics Co Ltd | 圧電薄膜共振器及びそれを用いた発振器並びにそれを内蔵した半導体集積回路 |
US7227432B2 (en) * | 2005-06-30 | 2007-06-05 | Robert Bosch Gmbh | MEMS resonator array structure and method of operating and using same |
JP4930381B2 (ja) | 2006-01-31 | 2012-05-16 | 株式会社村田製作所 | 圧電振動装置 |
JP2008022408A (ja) | 2006-07-14 | 2008-01-31 | Epson Toyocom Corp | 圧電薄膜共振子 |
JP4978114B2 (ja) * | 2006-08-21 | 2012-07-18 | セイコーエプソン株式会社 | 圧電振動片の製造方法 |
US20080119003A1 (en) * | 2006-11-17 | 2008-05-22 | Charles Grosjean | Substrate contact for a MEMS device |
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JP5226409B2 (ja) | 2008-07-17 | 2013-07-03 | 太陽誘電株式会社 | 共振デバイス、通信モジュール、通信装置、共振デバイスの製造方法 |
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-
2015
- 2015-05-27 US US14/722,323 patent/US20160352307A1/en not_active Abandoned
-
2016
- 2016-05-24 WO PCT/US2016/033929 patent/WO2016191425A1/en active Application Filing
- 2016-05-24 CN CN201680025459.4A patent/CN107534430B/zh active Active
- 2016-05-24 JP JP2018509738A patent/JP6617902B2/ja active Active
-
2017
- 2017-11-09 US US15/807,778 patent/US10778184B2/en active Active
-
2019
- 2019-11-11 JP JP2019204095A patent/JP7029114B2/ja active Active
Also Published As
Publication number | Publication date |
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JP7029114B2 (ja) | 2022-03-03 |
CN107534430A (zh) | 2018-01-02 |
JP2018516028A (ja) | 2018-06-14 |
US20160352307A1 (en) | 2016-12-01 |
JP2020022209A (ja) | 2020-02-06 |
CN107534430B (zh) | 2020-10-09 |
US10778184B2 (en) | 2020-09-15 |
US20180069527A1 (en) | 2018-03-08 |
WO2016191425A1 (en) | 2016-12-01 |
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