US20160352307A1 - Mems resonator with high quality factor - Google Patents

Mems resonator with high quality factor Download PDF

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Publication number
US20160352307A1
US20160352307A1 US14/722,323 US201514722323A US2016352307A1 US 20160352307 A1 US20160352307 A1 US 20160352307A1 US 201514722323 A US201514722323 A US 201514722323A US 2016352307 A1 US2016352307 A1 US 2016352307A1
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mems resonator
pair
metal layers
layer
piezoelectric layer
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Abandoned
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Ville Kaajakari
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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Priority to US14/722,323 priority Critical patent/US20160352307A1/en
Assigned to MURATA MANUFACTURING CO., LTD. reassignment MURATA MANUFACTURING CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KAAJAKARI, VILLE
Priority to PCT/US2016/033929 priority patent/WO2016191425A1/en
Priority to JP2018509738A priority patent/JP6617902B2/ja
Priority to CN201680025459.4A priority patent/CN107534430B/zh
Publication of US20160352307A1 publication Critical patent/US20160352307A1/en
Priority to US15/807,778 priority patent/US10778184B2/en
Priority to JP2019204095A priority patent/JP7029114B2/ja
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H9/02433—Means for compensation or elimination of undesired effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H9/02433—Means for compensation or elimination of undesired effects
    • H03H2009/0244—Anchor loss
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H2009/02488—Vibration modes
    • H03H2009/02496—Horizontal, i.e. parallel to the substrate plane
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H2009/155—Constructional features of resonators consisting of piezoelectric or electrostrictive material using MEMS techniques
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H03H2009/241—Bulk-mode MEMS resonators

Definitions

  • the present invention relates to a MEMS resonator, and, more particular, to a MEMS resonator with a high quality factor.
  • Microelectromechanical system (“MEMS”) resonators are small electromechanical structures that vibrate at high frequencies and are often used for timing references, signal filtering, mass sensing, biological sensing, motion sensing, and other applications. MEMS resonators are considered a common alternative to quartz timing devices. In general, quartz resonators have a good quality factor and piezoelectric coupling, but one limitation for quartz resonators is that they are difficult to design in smaller sizes.
  • MEMS resonators are made of silicon using lithography based manufacturing processes and wafer level processing techniques. Designers have found that pure silicon resonators often demonstrate very high quality factors comparable to quartz crystals, for example, as described in Non-patent document 1. However, bare silicon is not piezoelectric and pure silicon resonators have high motional impedance making them unsuitable to replace quartz resonators in many applications.
  • some designs have added piezoelectric material, such as a layer of thin film of aluminum nitride (AlN), as described in Non-patent document 2, for example.
  • a thin film of molybdenum may be sputtered onto the silicon followed by a layer of AlN and an additional layer of molybdenum. After thin film deposition, the metal layers, the AlN layer and the silicon are etched to form the resonator shape. With the resulting design, the lower and upper layers of molybdenum serve as electrodes to excite and detect the mechanical vibrations of the resonator.
  • FIG. 1 illustrates a conventional micromechanical bulk acoustic resonator.
  • the bulk acoustic resonator includes silicon layers 11 and 13 with an insulator 12 disposed therebetween.
  • two metal layers 14 , 16 are disposed on top of silicon substrate 13 with a piezoelectric film 15 disposed therebetween.
  • One limitation with this design is that the addition of the piezoelectric film 15 and the metal layers 14 and 16 on top of the silicon 13 breaks the symmetry of the resonator 10 .
  • the top of silicon is dissimilar to the bottom of silicon.
  • the asymmetrical design causes vibrations in the thickness direction of the resonator that result in energy leakage out of the resonator.
  • FIGS. 2A and 2B illustrate a comparison of vibration between a pure silicon resonator and a silicon resonator with thin films deposited on a top surface of the silicon layer.
  • the dashed outline represents the device in its original position with no vibration.
  • FIG. 2A illustrates a pure silicon resonator 110 having an anchor center point 120 .
  • the device 110 expands and contracts as shown in the two images of FIG. 2A , but there is no movement in the z direction, i.e., the anchor center point 120 does not move up or down while vibrating.
  • FIG. 2B illustrates a resonator design that includes thin films (e.g., the piezoelectric layer and metal layers) 112 disposed on top of the silicon substrate.
  • the piezoelectric and metal films have different elastic modulus and density than silicon. Because the symmetry is broken, the resonator bends and there will be vibration movement in the z direction, i.e., the anchor center point 120 will move up or down while vibrating.
  • piezoelectric MEMS resonator designs such as those shown in FIGS. 1 and 2B , will typically have a quality factor that is about an order of magnitude lower than bare silicon resonators, such as the device shown in FIG. 2A , at the same frequency.
  • the low quality factor of the piezoelectric MEMS resonator designs increases the noise in oscillator applications and increases the motional impedance.
  • One design that attempts to overcome the low quality factor of piezoelectric MEMS resonators is to increase the size of the resonator by using a higher order overtone design, for example, as described in Patent document 1. While a higher order overtone design directly decreases the motional resistance, it also increases the size of the resonator. Moreover, since the manufacturing cost of the resonator is proportional to the size, the larger resonator size is not preferred. In addition, even for larger resonators, the low motional impedance is still not sufficient for low noise oscillator applications and a higher quality factor is required.
  • Non patent document 1 V. Kaajakari, T. Mattila, A. Oja, J. Kiihamäki, and H. Sep Georg, “Square-extensional mode single-crystal silicon micromechanical resonator for low phase noise oscillator applications”, IEEE Electron Device Letters, Vol. 25, No. 4, pp. 173-175, April 2004.
  • Non patent document 2 G. Piazza, P. J. Stephanou, A. P. Pisano, “Piezoelectric Aluminum Nitride Vibrating Contour-Mode MEMS Resonators”, Journal of MicroElectro Mechanical Systems, vol. 15, no.6, pp. 1406-1418, December 2006.
  • Patent document 1 U.S. Pat. No. 7,924,119.
  • the MEMS resonator according to the present disclosure increases the quality factor of the resonator that results in lower motional impedance without increasing the resonator size.
  • a MEMS resonator includes a silicon layer having a first surface and a second surface opposite the first surface; at least one metal layer disposed above the first surface of the silicon layer and at least one corresponding metal layer disposed below the second surface of the silicon layer; and a piezoelectric layer disposed above the first surface of the silicon layer and a corresponding piezoelectric layer disposed below the second surface of the silicon layer.
  • the MEMS resonator With the symmetrical or substantially symmetrical design of the MEMS resonator in the thickness direction, the MEMS resonator provides a high quality factor compared with conventional MEMS resonators because it does not move in the z direction during vibration mode.
  • the at least one metal layer and the at least one corresponding metal layer are symmetrically disposed with respect to each other about the silicon layer and the piezoelectric layer and the corresponding piezoelectric layer are symmetrically disposed with respect to each other about the silicon layer.
  • the at least one metal layer comprises a pair of first metal layers with the piezoelectric layer disposed therebetween and the at least one corresponding metal layer comprises a pair of second metal layers with the corresponding piezoelectric layer disposed therebetween.
  • the pair of first metal layers and the piezoelectric layer is symmetrically disposed about the silicon layer with respect to the pair of second metal layers and the corresponding piezoelectric layer.
  • the pair of first metal layers is electrically coupled to a voltage source to actuate the MEMS resonator and the pair of second metal layers is electrically insulated from the voltage source.
  • the pair of second metal layers is electrically coupled to the voltage source.
  • the piezoelectric layer comprises a thickness substantially equal to a thickness of the corresponding piezoelectric layer and the pair of first metal layers each comprises a thickness substantially equal to respective thicknesses of the pair of second metal layers.
  • the silicon layer comprises a thickness between 5 and 10 micrometers.
  • a MEMS resonator includes a silicon layer having a first surface and a second surface opposite the first surface; a pair of first metal layers disposed above the first surface of the silicon layer; a first piezoelectric layer disposed between the pair of first metal layers; a pair of second metal layers symmetrically disposed below the second surface of the silicon layer relative to the pair of first metal layers; and a second piezoelectric layer disposed between the pair of second metal layers.
  • a MEMS resonator includes a silicon layer having a first surface and a second surface opposite the first surface; a pair of first metal layers disposed above the first surface of the silicon layer; a first piezoelectric layer having a first thickness disposed between the pair of first metal layers; and a second piezoelectric layer disposed below the second surface of the silicon layer, wherein the second piezoelectric layer comprises a second thickness greater than the first thickness of the first piezoelectric layer to inhibit vibration in a thickness direction of the MEMS resonator when the pair of first metal layers are excited by a voltage source.
  • the pair of first metal layers and the first piezoelectric layer have a combined mechanical stiffness that is substantially equal to a mechanical stiffness of the second piezoelectric layer.
  • the combined mechanical stiffness of the pair of first metal layers and the first piezoelectric layer is within 10% MPa*m of the mechanical stiffness of the second piezoelectric layer.
  • FIG. 1 illustrates a conventional micromechanical bulk acoustic resonator.
  • FIGS. 2A and 2B illustrate a comparison of vibration between a pure silicon resonator and a silicon resonator with thin films disposed on a top surface of the silicon layer.
  • FIG. 3A illustrates a top view of a MEMS resonator according to a first exemplary embodiment.
  • FIG. 3B illustrates a cross-sectional view of the MEMS resonator according to the first exemplary embodiment as shown in FIG. 2A .
  • FIG. 4 illustrates a cross-sectional view of an exemplary MEMS resonator according to another exemplary embodiment.
  • FIG. 5 illustrates a cross-sectional view of an exemplary MEMS resonator according to another exemplary embodiment.
  • FIG. 3A illustrates a top view of a MEMS resonator according to a first exemplary embodiment.
  • a MEMS resonator 200 is disclosed that provides a high quality factor of silicon by maintaining symmetry of the resonator in the thickness direction.
  • the symmetrical design can readily be seen in FIG. 3B and will be discussed in more detail below.
  • the MEMS resonator 200 includes a silicon layer 210 with a top or first piezoelectric layer 212 disposed above the silicon layer 210 . Furthermore, a top metal layer 214 A is disposed on the first piezoelectric layer 212 that serves as one of a pair of electrodes in operation of the MEMS resonator 200 according to the exemplary embodiment. Due to the symmetrical design that is shown in FIG. 3B discussed below, the MEMS resonator 200 will vibrate in the X and Y plane during operation, but will have reduced or minimal motional impedance. That is, the symmetrical design of the MEMS resonator 200 prevents or reduces vibration in the Z plane.
  • FIG. 3B illustrates a cross-sectional view of the symmetrical design of the MEMS resonator 200 according to the first exemplary embodiment as shown in FIG. 3A . It should be readily apparent that the cross-sectional view is taken along the dashed lines shown in FIG. 3A .
  • the MEMS resonator 200 includes a silicon layer 210 , a top piezoelectric layer 212 and a top metal layer 214 A.
  • a bottom metal layer 214 B is disposed on the silicon layer 210 , which, in conjunction with the top metal layer 214 A, collectively form a first pair of electrodes that serve as electrodes to excite and detect the mechanical vibrations of the resonator 200 .
  • a pair of metal layers 214 A and 214 B is disposed above the silicon layer 210 with the top or first piezoelectric layer 212 disposed therebetween.
  • the metal layer 214 is disposed directly on the silicon layer 210 , although additional silicon dioxide (SiO 2 ) films (not shown) can be disposed between the various layers of the MEMS device 200 .
  • additional layers that correspond to the piezoelectric layer 212 and pair of metal layers 214 A and 214 B are disposed on the opposite side of the silicon layer 210 . More particular, opposite the piezoelectric and metal layers on the first surface of the silicon layer 210 , a second pair of metal layers 218 A and 218 B are disposed with a second piezoelectric layer 216 disposed therebetween as shown. As is readily apparent from the cross-sectional view illustrated in FIG.
  • the MEMS resonator 200 comprises a symmetrical or substantially symmetrical design in the thickness direction, which provides a high quality factor when compared with conventional MEMS resonators because it does not move in the z direction (or has minimal movement compared with conventional designs) during vibration mode.
  • metal layer 218 A corresponds to metal layer 214 A
  • piezoelectric layer 216 corresponds to piezoelectric layer 212
  • metal layer 218 B corresponds to metal layer 214 B.
  • the metal layers 214 A, 214 B, 218 A and 218 B are formed from molybdenum, although other metal layers, such as platinum, aluminum and the like can be deposited as would be understood to one skilled in the art.
  • the piezoelectric layers 212 and 216 are each formed from a thin layer of aluminum nitride (AlN) according to the exemplary embodiment, although other piezoelectric materials may be used.
  • AlN aluminum nitride
  • the MEMS resonator 200 can be manufactured using conventional sputtering and deposition techniques, the details of which will not be described in detail so as to not unnecessarily obscure the aspects of the invention.
  • the symmetrical MEMS resonator design shown in FIGS. 3A and 3B provides an increased quality factor that results in lower motional impedance.
  • the silicon layer has a thickness between 5-10 micrometers ( ⁇ m).
  • conventional MEMS resonator designs must increase the thickness of the silicon layer, for example, to 50 micrometers or more in order to obtain a resonator with a sufficiently high quality factor for certain applications. Such an increase in size of the silicon layer would significantly increase manufacturing costs as would be understood to one skilled in the art.
  • an asymmetric resonator with top piezoelectric film and 10 micrometers silicon thickness may have a quality factor of only 10,000 at 24 MHz.
  • a pure silicon resonator may have a quality factor of over 100,000.
  • the quality factor would be increased to about 20,000, for example, but this quality factor would still be too low for many applications.
  • the MEMS resonator may achieve a quality factor of 100,000 or higher at 24 MHz while maintaining a silicon layer with a thickness between 5-10 micrometers, for example.
  • the piezoelectric layers 212 and 216 can have a thickness between 0.5 and 1.0 micrometers according to the exemplary embodiment, but may have thickness between 200 to 300 nanometers.
  • the respective thicknesses of the piezoelectric layers 212 and 216 are substantially the same.
  • the metal layers 214 A, 214 B, 218 A and 218 B can have a thickness of approximately 200 nanometers according to the exemplary embodiment, but may have a thickness in the range between 50 to 300 nanometers.
  • the respective thicknesses of the metal layers 214 A and 218 A are substantially the same and the respective thicknesses of the metal layers 214 B and 218 B are substantially the same.
  • all four metal layers can have substantially the same thickness for uniform symmetry of the MEMS resonator 200 .
  • the thicknesses of the matching or corresponding layers on top and bottom of the silicon layer 210 are not so limited, symmetrical design lowers motional impedance and improves the quality factor because the resonator 200 has none or limited movement in the z direction (i.e., the thickness direction) during vibration mode.
  • the MEMS resonator 200 disclosed herein can be used for certain applications, for example timing devices, gyroscopes, bolometers, and the like, while still having a very thin silicon layer (e.g., 5-10 micrometers).
  • a very thin silicon layer e.g., 5-10 micrometers.
  • 3B is provided to illustrate the symmetrical layering that provides the high quality factor for the device.
  • the device layers including the metal layers, the piezoelectric layer and the silicon layer can be etched to form the specific resonator shape needed for the desired device.
  • the term “substantially” as it is used herein takes into account minor variations in the thickness of the corresponding layers that may occur during the manufacturing process.
  • the MEMS resonator 200 is designed to have two piezoelectric layers 212 and 216 on opposite sides of the silicon layer 210 that have the same thickness.
  • the machines uses to deposit the layers may lead to slight differences in the thickness of the corresponding layers.
  • the use of the term “substantially” to describe the thickness of the corresponding layers takes into account resulting variances in thickness due to variations in the manufacturing equipment.
  • the pair of metal layers 214 A and 214 B and the pair of metal layers 218 A and 218 B both function as pairs of electrodes according to one embodiment.
  • manufacturing a MEMS resonator with electrical contacts on the underside of the resonator can be relatively difficult since the manufacturing process requires manufacturing of electrical connections through the silicon layer 210 .
  • a hole i.e., a via
  • an insulating material such as silicon dioxide.
  • the hole needs to be filled with a conductive material that forms the electoral via from top to the bottom of the resonator 200 .
  • the silicon layer 210 comprises a thickness between 5-10 micrometers, for example, the via formation can be a significantly more difficult process than making contacts to the electrodes on the top side of the MEMS resonator 200 .
  • FIG. 4 illustrates a cross-sectional view of an exemplary MEMS resonator 300 according to another exemplary embodiment.
  • the MEMS resonator 300 according to this embodiment comprises the same symmetrical design discussed above with respect to FIGS. 3A and 3B . Only the points different from the MEMS resonator 200 of the first embodiment will be specifically described.
  • a voltage source 220 is provided that applies voltage to metal layers 214 A and 214 B during operation to drive the resonator 300 in continuous motion.
  • the specific operation is known to those skilled in the art and will not be described herein. It should be appreciated that the electronic circuit that provides the voltage source can be in the same physical package (not shown) as the MEMS resonator 300 .
  • the thin films 218 A and 218 B at the bottom of the MEMS resonator 300 are not electrically connected to voltage source 220 or another source. Rather, only the top electrodes (i.e., metal layers 214 A and 214 B) are electrically connected. As such, the bottom thin films (i.e., metal layers 218 A and 218 B) are “dummy” actuators that are provided to maintain the resonator symmetry in the thickness direction described above with respect to FIG. 3B .
  • the pair of second metal layers 218 A and 218 B can be connected to the voltage source by one or more vias extending through silicon layer 210 as discussed above or by other means as would be understood to one skilled in the art.
  • FIG. 5 illustrates a cross-sectional view of an exemplary MEMS resonator 400 according to this additional exemplary embodiment.
  • the MEMS resonator 400 according to the embodiment shown in FIG. 5 comprises the same symmetrical design discussed above with respect to FIGS. 3A and 3B . Only the points different from the MEMS resonator 200 of the first embodiment will be specifically described. Namely, the MEMS resonator 400 includes a piezoelectric layer 416 at the bottom of the silicon layer 210 , but does not include metal films on each side of the piezoelectric layer 416 .
  • the structure the MEMS resonator 400 provides a design with symmetric characteristics, by selecting film thicknesses above and below the silicon layer 210 such that bottom films combined and top films combined substantially equal mechanical stiffness.
  • the layers/films deposited on the top and the bottom of the silicon layer are selected so that the combined films have an equal or substantially equal mechanical thickness to create a symmetrical design.
  • the mechanical stiffness of the top and bottom layers can be selected during the manufacturing process so that the resulting MEMS resonator 400 will not vibrate (or have minimal vibration) in the Z direction when it is excited by a voltage source as described above.
  • hi the respective film thickness for each film.
  • the elastic modulus will be the same for the two layers 212 and 416 .
  • the thickness of the piezoelectric layer 416 will need to be increased to obtain a total thickness that results in a mechanical stiffness that is substantially equal to achieve the symmetrical design of the MEMS resonator 400 .
  • the second piezoelectric layer 416 will have a thickness that is greater than a thickness of the first piezoelectric layer 212 to inhibit (i.e., eliminate or reduce) vibration in a thickness direction (i.e., the z direction) of the MEMS resonator 400 when the pair of first metal layers 214 A and 214 B are excited by a voltage source.
  • a thickness direction i.e., the z direction
  • the term “substantially” as it is used to describe the similar mechanical stiffness of the combined top and bottom films takes into account minor variations that may occur in the thickness of the corresponding layers during the deposition process and the like.
  • “substantially” equal for the mechanical stiffness of the top and bottom combined layers means that the stiffness is within 10% MPa*m of each other.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
US14/722,323 2015-05-27 2015-05-27 Mems resonator with high quality factor Abandoned US20160352307A1 (en)

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Application Number Priority Date Filing Date Title
US14/722,323 US20160352307A1 (en) 2015-05-27 2015-05-27 Mems resonator with high quality factor
PCT/US2016/033929 WO2016191425A1 (en) 2015-05-27 2016-05-24 Mems resonator with high quality factor
JP2018509738A JP6617902B2 (ja) 2015-05-27 2016-05-24 高ｑ ｍｅｍｓ共振子
CN201680025459.4A CN107534430B (zh) 2015-05-27 2016-05-24 具有高品质因数的mems谐振器
US15/807,778 US10778184B2 (en) 2015-05-27 2017-11-09 MEMS resonator with a high quality factor
JP2019204095A JP7029114B2 (ja) 2015-05-27 2019-11-11 高ｑ ｍｅｍｓ共振子

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