JP6584352B2 - 制御装置、基板処理システム、基板処理方法及びプログラム - Google Patents
制御装置、基板処理システム、基板処理方法及びプログラム Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims description 64
- 239000000758 substrate Substances 0.000 title claims description 57
- 238000003672 processing method Methods 0.000 title claims description 5
- 238000000034 method Methods 0.000 claims description 90
- 230000008569 process Effects 0.000 claims description 89
- 238000003860 storage Methods 0.000 claims description 51
- 230000015572 biosynthetic process Effects 0.000 claims description 50
- 238000000231 atomic layer deposition Methods 0.000 claims description 39
- 238000005259 measurement Methods 0.000 claims description 20
- 230000000694 effects Effects 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000005457 optimization Methods 0.000 claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 2
- 229920006395 saturated elastomer Polymers 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 62
- 239000007789 gas Substances 0.000 description 60
- 239000004065 semiconductor Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 238000010926 purge Methods 0.000 description 6
- 238000004364 calculation method Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 239000003779 heat-resistant material Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
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- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67248—Temperature monitoring
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
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Description
本実施形態の基板処理装置について説明する。本実施形態の基板処理装置は、基板の一例としての半導体ウエハ(以下「ウエハ」という。)を垂直方向に所定の間隔をおいて多数枚保持した基板保持具を処理容器に収容し、多数枚のウエハに対して同時に原子層堆積(ALD:Atomic Layer Deposition)による膜を成膜することが可能なバッチ式の装置である。
本実施形態の制御装置100について、図2に基づき説明する。図2は、本実施形態の制御装置の一例を示す概略構成図である。
以下、実施例において本発明を具体的に説明するが、本発明は実施例に限定して解釈されるものではない。
・目標膜厚:30.0nm
・成膜ガス:DCSガス(2slm、25秒/サイクル)、NH3ガス(20slm、35秒/サイクル)
・プロセスモデル:温度−膜厚モデル、サイクル数−膜厚モデル
・ログ情報:ヒータ60の温度の実測値、ヒータ60のパワーの実測値
図6に示されるように、SiN膜の膜厚は、すべてのゾーン(ゾーン1〜7)において、目標値(30nm)よりも厚い値であった。また、図7に示されるように、SiN膜の膜厚の面間均一性は、±1.5%程度であった。
100 制御装置
102 モデル記憶部
104 レシピ記憶部
105 ログ記憶部
106 ROM
108 RAM
110 I/Oポート
112 CPU
114 バス
116 操作パネル
W ウエハ
Claims (9)
- 原子層堆積による膜を基板に成膜する基板処理装置の動作を制御する制御装置であって、
前記膜の種類に応じた成膜条件を記憶するレシピ記憶部と、
前記成膜条件が前記膜の特性に与える影響を表すプロセスモデルを記憶するモデル記憶部と、
成膜時の前記成膜条件の実測値を記憶するログ記憶部と、
前記レシピ記憶部に記憶された前記成膜条件により成膜された前記膜の特性の測定結果と、前記モデル記憶部に記憶された前記プロセスモデルと、前記ログ記憶部に記憶された前記成膜条件の実測値と、に基づいて、目標とする前記膜の特性を満たす成膜条件を算出する制御部と、
を有し、
前記成膜条件は、前記基板を加熱するヒータの設定温度及び原子層堆積のサイクル数を含み、
前記膜の特性は、膜厚を含み、
前記プロセスモデルは、前記基板の温度が成膜された膜の膜厚に与える影響を表す温度−膜厚モデルと、前記原子層堆積のサイクル数が成膜された膜の膜厚に与える影響を表すサイクル数−膜厚モデルと、を含む、制御装置。 - 前記成膜条件は、前記基板の温度を含み、
前記モデル記憶部には、前記基板の温度と前記基板を加熱するヒータの設定温度との関係を表す熱モデルが更に記憶されており、
前記制御部は、前記モデル記憶部に記憶された前記熱モデルに基づいて、前記基板の温度が前記プロセスモデルにより算出される温度となるように、前記ヒータの設定温度を決定する、
請求項1に記載の制御装置。 - 前記制御部は、前記ログ記憶部に記憶された前記成膜条件の実測値に基づいて、前記ヒータのパワーが飽和しないように、前記成膜条件を調整する、
請求項2に記載の制御装置。 - 前記制御部は、最適化アルゴリズムを利用して目標とする前記膜の特性を満たす成膜条件を算出する、
請求項1乃至3のいずれか一項に記載の制御装置。 - 原子層堆積による膜を基板に成膜する基板処理装置と、
前記基板処理装置の動作を制御する制御装置と、
を有し、
前記制御装置は、
前記膜の種類に応じた成膜条件を記憶するレシピ記憶部と、
前記成膜条件が前記膜の特性に与える影響を表すプロセスモデルを記憶するモデル記憶部と、
成膜時の前記成膜条件の実測値を記憶するログ記憶部と、
前記レシピ記憶部に記憶された前記成膜条件により成膜された前記膜の特性の測定結果と、前記モデル記憶部に記憶された前記プロセスモデルと、前記ログ記憶部に記憶された前記成膜条件の実測値と、に基づいて、目標とする前記膜の特性を満たす成膜条件を算出する制御部と、
を有し、
前記成膜条件は、前記基板を加熱するヒータの設定温度及び原子層堆積のサイクル数を含み、
前記膜の特性は、膜厚を含み、
前記プロセスモデルは、前記基板の温度が成膜された膜の膜厚に与える影響を表す温度−膜厚モデルと、前記原子層堆積のサイクル数が成膜された膜の膜厚に与える影響を表すサイクル数−膜厚モデルと、を含む、基板処理システム。 - 前記基板処理装置は、
前記基板を垂直方向に所定の間隔をおいて多数枚保持する基板保持具と、
前記基板保持具を収容する処理容器と、
前記処理容器内に、第1の処理ガスと、前記第1の処理ガスと反応する第2の処理ガスとを供給するガス供給手段と、
を有する、
請求項5に記載の基板処理システム。 - 前記第1の処理ガスは、ジクロロシランガスであり、
前記第2の処理ガスは、アンモニアガスである、
請求項6に記載の基板処理システム。 - 原子層堆積により所定の成膜条件で基板に膜を成膜する成膜工程と、
前記成膜工程で成膜された前記膜の特性を測定する測定工程と、
前記測定工程で測定された前記膜の特性の測定結果と、前記成膜条件が前記膜の特性に与える影響を表すプロセスモデルと、成膜時の前記成膜条件の実測値と、に基づいて、目標とする前記膜の特性を満たす成膜条件を算出する算出工程と、
を有し、
前記成膜条件は、前記基板を加熱するヒータの設定温度及び原子層堆積のサイクル数を含み、
前記膜の特性は、膜厚を含み、
前記プロセスモデルは、前記基板の温度が成膜された膜の膜厚に与える影響を表す温度−膜厚モデルと、前記原子層堆積のサイクル数が成膜された膜の膜厚に与える影響を表すサイクル数−膜厚モデルと、を含む、基板処理方法。 - 請求項8に記載の基板処理方法をコンピュータに実行させる、プログラム。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016059725A JP6584352B2 (ja) | 2016-03-24 | 2016-03-24 | 制御装置、基板処理システム、基板処理方法及びプログラム |
TW106109245A TWI681356B (zh) | 2016-03-24 | 2017-03-21 | 控制裝置、基板處理系統、基板處理方法及程式 |
US15/466,136 US20170278699A1 (en) | 2016-03-24 | 2017-03-22 | Control device, substrate processing system, substrate processing method, and program |
KR1020170037018A KR102115642B1 (ko) | 2016-03-24 | 2017-03-23 | 제어 장치, 기판 처리 시스템, 기판 처리 방법 및 프로그램 |
CN201710183981.1A CN107230654B (zh) | 2016-03-24 | 2017-03-24 | 控制装置、基板处理系统、基板处理方法以及存储介质 |
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US10741426B2 (en) * | 2017-09-27 | 2020-08-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for controlling temperature of furnace in semiconductor fabrication process |
JP6959190B2 (ja) | 2018-07-24 | 2021-11-02 | 旭化成エレクトロニクス株式会社 | 学習処理装置、学習処理方法、化合物半導体の製造方法およびプログラム |
JP7161896B2 (ja) * | 2018-09-20 | 2022-10-27 | 株式会社Screenホールディングス | 基板処理装置および基板処理システム |
KR20210092238A (ko) * | 2018-11-21 | 2021-07-23 | 도쿄엘렉트론가부시키가이샤 | 기판 처리의 조건 설정 지원 방법, 기판 처리 시스템, 기억 매체 및 학습 모델 |
JP2020143333A (ja) * | 2019-03-06 | 2020-09-10 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
JP7190380B2 (ja) * | 2019-03-19 | 2022-12-15 | 旭化成エレクトロニクス株式会社 | 学習処理装置、学習処理方法、化合物半導体の製造方法およびプログラム |
JP7163229B2 (ja) * | 2019-03-22 | 2022-10-31 | 旭化成エレクトロニクス株式会社 | 学習処理装置、学習処理方法、化合物半導体の製造方法およびプログラム |
KR20220154200A (ko) * | 2020-03-25 | 2022-11-21 | 도쿄엘렉트론가부시키가이샤 | 기판의 처리 방법 및 기판 처리 장치 |
JP7442407B2 (ja) * | 2020-07-14 | 2024-03-04 | 東京エレクトロン株式会社 | 制御装置、システム及び制御方法 |
JP2023000903A (ja) * | 2021-06-18 | 2023-01-04 | 株式会社Sumco | 枚葉式エピタキシャル成長装置の制御装置及び制御方法、並びにエピタキシャルウェーハの製造システム |
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JP2803460B2 (ja) * | 1992-04-15 | 1998-09-24 | 日本電気株式会社 | 減圧気相成長装置 |
JPH097963A (ja) * | 1995-06-19 | 1997-01-10 | Kokusai Electric Co Ltd | 電気炉のデータ処理方法 |
JP2005236248A (ja) * | 2004-01-20 | 2005-09-02 | Hitachi Kokusai Electric Inc | 温度検出システム |
US7524750B2 (en) * | 2006-04-17 | 2009-04-28 | Applied Materials, Inc. | Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVD |
JP4942174B2 (ja) * | 2006-10-05 | 2012-05-30 | 東京エレクトロン株式会社 | 基板処理システムの処理レシピ最適化方法,基板処理システム,基板処理装置 |
JP4935687B2 (ja) * | 2008-01-19 | 2012-05-23 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
JP5661523B2 (ja) * | 2011-03-18 | 2015-01-28 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
JP5788355B2 (ja) * | 2012-03-29 | 2015-09-30 | 東京エレクトロン株式会社 | 熱処理システム、熱処理方法、及び、プログラム |
JP6106519B2 (ja) * | 2013-05-09 | 2017-04-05 | 東京エレクトロン株式会社 | 基板処理方法、プログラム、制御装置、成膜装置及び基板処理システム |
JP6066847B2 (ja) * | 2013-07-09 | 2017-01-25 | 東京エレクトロン株式会社 | 基板処理方法及び制御装置 |
US9798317B2 (en) * | 2013-07-03 | 2017-10-24 | Tokyo Electron Limited | Substrate processing method and control apparatus |
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CN107230654A (zh) | 2017-10-03 |
KR102115642B1 (ko) | 2020-05-26 |
KR20170113217A (ko) | 2017-10-12 |
CN107230654B (zh) | 2022-02-18 |
US20170278699A1 (en) | 2017-09-28 |
TWI681356B (zh) | 2020-01-01 |
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