JP6568853B2 - デバイスを処理するための処理装置、及び処理真空チャンバから保守真空チャンバへ又は保守真空チャンバから処理真空チャンバへ蒸発源を移送するための方法 - Google Patents
デバイスを処理するための処理装置、及び処理真空チャンバから保守真空チャンバへ又は保守真空チャンバから処理真空チャンバへ蒸発源を移送するための方法 Download PDFInfo
- Publication number
- JP6568853B2 JP6568853B2 JP2016537025A JP2016537025A JP6568853B2 JP 6568853 B2 JP6568853 B2 JP 6568853B2 JP 2016537025 A JP2016537025 A JP 2016537025A JP 2016537025 A JP2016537025 A JP 2016537025A JP 6568853 B2 JP6568853 B2 JP 6568853B2
- Authority
- JP
- Japan
- Prior art keywords
- vacuum chamber
- processing
- maintenance
- evaporation
- evaporation source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000001704 evaporation Methods 0.000 title claims description 292
- 230000008020 evaporation Effects 0.000 title claims description 286
- 238000012545 processing Methods 0.000 title claims description 255
- 238000012423 maintenance Methods 0.000 title claims description 152
- 238000000034 method Methods 0.000 title claims description 66
- 238000009826 distribution Methods 0.000 claims description 91
- 239000000758 substrate Substances 0.000 claims description 62
- 239000011368 organic material Substances 0.000 claims description 49
- 230000008569 process Effects 0.000 claims description 45
- 238000007789 sealing Methods 0.000 claims description 45
- 238000012546 transfer Methods 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 12
- 238000004891 communication Methods 0.000 claims description 9
- 239000012530 fluid Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 description 19
- 230000008878 coupling Effects 0.000 description 16
- 238000010168 coupling process Methods 0.000 description 16
- 238000005859 coupling reaction Methods 0.000 description 16
- 230000008439 repair process Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000013519 translation Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000011796 hollow space material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000013022 venting Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000011554 ferrofluid Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/246—Replenishment of source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
- C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Description
Claims (18)
- デバイスを処理するための処理装置であって、
処理真空チャンバと、
材料用の2つの蒸発源であって、前記2つの蒸発源の各々が、
前記材料を蒸発するように構成された少なくとも1つの蒸発るつぼと、
一又は複数の排出口を有する少なくとも1つの分配管であって、前記少なくとも1つの蒸発るつぼと流体連通しており、実質的に垂直に延びる線源を提供する分配管と
を備える蒸発源と、
前記処理真空チャンバと連結された保守真空チャンバであって、前記2つの蒸発源の各々を、前記処理真空チャンバから前記保守真空チャンバへ及び前記保守真空チャンバから前記処理真空チャンバへ移送することができる、保守真空チャンバと、
前記保守真空チャンバ及び前記処理真空チャンバの連結部に設けられた開口と、
前記開口を閉鎖するように構成された2つの密閉デバイスであって、2つの密閉デバイスの各密閉デバイスが前記2つの蒸発源のそれぞれに取り付けられている、2つの密閉デバイスと、
前記保守真空チャンバ内で前記2つの蒸発源の位置を交換するために回転可能な回転可能デバイスと、
を備える処理装置。 - 前記蒸発源の少なくとも1つが、前記分配管に対する支持体を含む、請求項1に記載の処理装置。
- 前記支持体が、第1のドライバに連結可能であり又は前記第1のドライバを含み、前記第1のドライバが、前記蒸発源の少なくとも1つの並進運動のために構成される、請求項2に記載の処理装置。
- 前記第1のドライバが、前記処理真空チャンバ内での前記蒸発源の少なくとも1つの並進運動のために構成される、請求項3に記載の処理装置。
- 前記蒸発源の少なくとも1つの前記蒸発るつぼ及び前記分配管は、前記処理真空チャンバから前記保守真空チャンバへ及び前記保守真空チャンバから前記処理真空チャンバへ移送することができ、前記分配管に対する前記支持体が、前記処理真空チャンバから前記保守真空チャンバへ移送されず且つ前記保守真空チャンバから前記処理真空チャンバへ移送されない、請求項2に記載の処理装置。
- 前記蒸発源の少なくとも1つの前記蒸発るつぼ及び前記分配管は、前記処理真空チャンバから前記保守真空チャンバへ及び前記保守真空チャンバから前記処理真空チャンバへ移送することができ、前記分配管に対する前記支持体が、前記処理真空チャンバから前記保守真空チャンバへ移送されず且つ前記保守真空チャンバから前記処理真空チャンバへ移送されない、請求項3に記載の処理装置。
- 前記開口が、前記処理真空チャンバから前記保守真空チャンバへ及び前記保守真空チャンバから前記処理真空チャンバへの前記2つの蒸発源の前記移送のために構成される、請求項1から6の何れか一項に記載の処理装置。
- 前記密閉デバイスが、前記開口を実質的に真空気密に密閉するように構成される、請求項1に記載の処理装置。
- 少なくとも前記分配管及び前記蒸発るつぼが、前記密閉デバイスに対して移動可能である、請求項1に記載の処理装置。
- 前記処理真空チャンバの中に配置され、少なくとも2つのトラックを有する蒸発源支持体システムを更に含み、前記蒸発源支持体システムの前記少なくとも2つのトラックが、少なくとも前記処理真空チャンバ内で前記2つの蒸発源の並進運動のために構成される、請求項1から6の何れか一項に記載の処理装置。
- 前記少なくとも2つのトラックのうちの各々が、第1のトラックセクション及び第2のトラックセクションを含み、前記第1のトラックセクション及び前記第2のトラックセクションが分離可能である、請求項10に記載の処理装置。
- 前記第1のトラックセクションが、前記蒸発源と共に、前記処理真空チャンバから前記保守真空チャンバへ及び前記保守真空チャンバから前記処理真空チャンバへ移送可能であるように構成される、請求項11に記載の処理装置。
- 前記処理装置が、内部に有機材料を含むデバイスを処理するために構成される、請求項1から6の何れか一項に記載の処理装置。
- バルブを介して前記処理真空チャンバと連結されたもう1つの真空チャンバを更に含み、前記もう1つの真空チャンバが、前記処理真空チャンバ内への及び前記処理真空チャンバからの基板の搬送のために構成される、請求項1から6の何れか一項に記載の処理装置。
- 内部に有機材料を含むデバイスを処理するための処理装置であって、
処理真空チャンバと、
材料用の2つの蒸発源であって、前記2つの蒸発源の各々が、
前記材料を蒸発するように構成された少なくとも1つの蒸発るつぼと、
一又は複数の排出口を有する少なくとも1つの分配管であって、前記少なくとも1つの蒸発るつぼと流体連通している分配管と
を備える蒸発源と、
前記処理真空チャンバと連結された保守真空チャンバであって、前記2つの蒸発源の各々を、前記処理真空チャンバから前記保守真空チャンバへ及び前記保守真空チャンバから前記処理真空チャンバへ移送することができる保守真空チャンバと、
前記保守真空チャンバ及び前記処理真空チャンバの連結部に設けられた開口であって、前記処理真空チャンバから前記保守真空チャンバへ及び前記保守真空チャンバから前記処理真空チャンバへの前記2つの蒸発源の前記移送のために構成された開口と、
前記2つの蒸発源に取り付けられ且つ前記開口を閉鎖するように構成された2つの密閉デバイスを含み、前記保守真空チャンバ内で前記2つの蒸発源が位置を交換するように回転可能に構成された回転可能デバイスと、
を備え、
一方の前記蒸発源が前記処理真空チャンバに配置され且つ前記一方の蒸発源に取り付けられた前記密閉デバイスが前記開口を閉鎖するときに、他方の前記蒸発源は前記保守真空チャンバに配置される、処理装置。 - 処理真空チャンバから保守真空チャンバへ又は前記保守真空チャンバから前記処理真空チャンバへ蒸発源を移送するための方法であって、
前記処理真空チャンバと前記保守真空チャンバとの間に提供された開口を通して、前記処理真空チャンバから前記保守真空チャンバへ又は前記保守真空チャンバから前記処理真空チャンバへ、前記蒸発源の蒸発るつぼ及び実質的に垂直に延びる線源を提供する分配管を移動させることを含み、
前記蒸発源に取り付けられた密閉デバイスを用いて前記開口を密閉することをさらに含み、
前記開口を閉鎖するように構成された2つの密閉デバイスの各密閉デバイスが2つの蒸発源のそれぞれに取り付けられており、前記2つの蒸発源が、前記保守真空チャンバ内で前記2つの蒸発源の位置を交換するように回転可能である、方法。 - 一方の前記蒸発源が前記処理真空チャンバに配置され且つ前記一方の蒸発源に取り付けられた前記密閉デバイスが前記開口を閉鎖するときに他方の前記蒸発源が前記保守真空チャンバに配置される、請求項16に記載の方法。
- 更に、
前記開口を通して、前記処理真空チャンバから前記保守真空チャンバへ又は前記保守真空チャンバから前記処理真空チャンバへ、前記蒸発源の前記蒸発るつぼ及び前記分配管と共に前記処理真空チャンバの中に配置された蒸発源支持体システムのトラックの2つのトラックセクションのうちの第1のトラックセクションを移動させることを含む、請求項16に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EPPCT/EP2013/076120 | 2013-12-10 | ||
PCT/EP2013/076120 WO2015086049A1 (en) | 2013-12-10 | 2013-12-10 | Evaporation source for organic material, apparatus having an evaporation source for organic material, system having an evaporation deposition apparatus with an evaporation source for organic materials, and method for operating an evaporation source for organic material |
PCT/EP2014/067673 WO2015086168A1 (en) | 2013-12-10 | 2014-08-19 | A processing apparatus for processing devices, particularly devices including organic materials therein, and method for transferring an evaporation source from a processing vacuum chamber to a maintenance vacuum chamber or from the maintenance vacuum chamber to the processing vacuum chamber |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2017500447A JP2017500447A (ja) | 2017-01-05 |
JP2017500447A5 JP2017500447A5 (ja) | 2018-04-05 |
JP6568853B2 true JP6568853B2 (ja) | 2019-08-28 |
Family
ID=49753180
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016537004A Active JP6328766B2 (ja) | 2013-12-10 | 2013-12-10 | 有機材料用の蒸発源、真空チャンバの中で有機材料を堆積させるための堆積装置、及び有機材料を蒸発させるための方法 |
JP2016537025A Active JP6568853B2 (ja) | 2013-12-10 | 2014-08-19 | デバイスを処理するための処理装置、及び処理真空チャンバから保守真空チャンバへ又は保守真空チャンバから処理真空チャンバへ蒸発源を移送するための方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016537004A Active JP6328766B2 (ja) | 2013-12-10 | 2013-12-10 | 有機材料用の蒸発源、真空チャンバの中で有機材料を堆積させるための堆積装置、及び有機材料を蒸発させるための方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US20170005297A1 (ja) |
EP (2) | EP3187618A1 (ja) |
JP (2) | JP6328766B2 (ja) |
KR (3) | KR101927925B1 (ja) |
CN (3) | CN105814231B (ja) |
TW (2) | TWI604553B (ja) |
WO (2) | WO2015086049A1 (ja) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6550464B2 (ja) * | 2014-12-05 | 2019-07-24 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 材料堆積システム及び材料堆積システムで材料を堆積する方法 |
CN107980070B (zh) * | 2015-07-13 | 2020-04-10 | 应用材料公司 | 蒸发源 |
US10483465B2 (en) | 2016-05-10 | 2019-11-19 | Applied Materials, Inc. | Methods of operating a deposition apparatus, and deposition apparatus |
KR102152890B1 (ko) * | 2016-05-18 | 2020-10-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 증착 소스의 운송을 위한 장치 및 방법 |
US10249525B2 (en) * | 2016-10-03 | 2019-04-02 | Applied Materials, Inc. | Dynamic leveling process heater lift |
EP3374540A1 (en) * | 2017-01-31 | 2018-09-19 | Applied Materials, Inc. | Material deposition arrangement, vacuum deposition system and method therefor |
JP2019510129A (ja) * | 2017-02-03 | 2019-04-11 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 隣り合う基板を有する連続蒸発のための装置及び方法 |
CN109563608A (zh) * | 2017-02-24 | 2019-04-02 | 应用材料公司 | 用于基板载体和掩模载体的定位配置、用于基板载体和掩模载体的传送系统及其方法 |
KR102057168B1 (ko) * | 2017-03-17 | 2019-12-18 | 어플라이드 머티어리얼스, 인코포레이티드 | 진공 처리 시스템을 동작시키는 방법들 |
CN108966659B (zh) * | 2017-03-17 | 2021-01-15 | 应用材料公司 | 沉积系统、沉积设备、和操作沉积系统的方法 |
WO2018166618A1 (en) * | 2017-03-17 | 2018-09-20 | Applied Materials, Inc. | Apparatus for vacuum processing of a substrate, system for the manufacture of devices having organic materials, and method for sealing a processing vacuum chamber and a maintenance vacuum chamber from each other |
US11004704B2 (en) | 2017-03-17 | 2021-05-11 | Applied Materials, Inc. | Finned rotor cover |
US20200016557A1 (en) * | 2017-04-07 | 2020-01-16 | Andre Brüning | Supply line guide for a vacuum processing system, use of a supply line guide and processing system |
EP3642633A4 (en) | 2017-06-21 | 2021-05-12 | Abbott Molecular Inc. | METHODS FOR AUTOMATED LOADING AND PROCESSING OF SAMPLES AND ASSOCIATED DEVICES AND SYSTEMS |
WO2019020166A1 (en) * | 2017-07-24 | 2019-01-31 | Applied Materials, Inc. | APPARATUS AND SYSTEM FOR PROCESSING A SUBSTRATE IN A VACUUM CHAMBER, AND METHOD FOR ALIGNING A SUBSTRATE CARRIER WITH A MASK CARRIER |
CN109563609B (zh) * | 2017-07-24 | 2021-04-13 | 应用材料公司 | 用于在真空腔室中处理基板的设备与系统和在真空腔室中运输载体的方法 |
US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
CN109715847A (zh) * | 2017-08-25 | 2019-05-03 | 应用材料公司 | 用于在真空腔室中蒸发材料的设备和用于在真空腔室中蒸发材料的方法 |
SG11202008268RA (en) | 2018-03-19 | 2020-10-29 | Applied Materials Inc | Methods for depositing coatings on aerospace components |
EP3784815A4 (en) | 2018-04-27 | 2021-11-03 | Applied Materials, Inc. | PROTECTION OF COMPONENTS AGAINST CORROSION |
CN214361638U (zh) * | 2018-05-30 | 2021-10-08 | 应用材料公司 | 沉积设备 |
WO2020030252A1 (en) * | 2018-08-07 | 2020-02-13 | Applied Materials, Inc. | Material deposition apparatus, vacuum deposition system and method of processing a large area substrate |
US11009339B2 (en) | 2018-08-23 | 2021-05-18 | Applied Materials, Inc. | Measurement of thickness of thermal barrier coatings using 3D imaging and surface subtraction methods for objects with complex geometries |
KR20200046463A (ko) * | 2018-10-24 | 2020-05-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 도가니 교체를 위한 증발 증착 시스템 |
US11512389B2 (en) | 2019-03-20 | 2022-11-29 | Samsung Electronincs Co., Ltd. | Apparatus for and method of manufacturing semiconductor device |
US11456173B2 (en) | 2019-04-08 | 2022-09-27 | Applied Materials, Inc. | Methods for modifying photoresist profiles and tuning critical dimensions |
WO2020214238A1 (en) | 2019-04-16 | 2020-10-22 | Applied Materials, Inc. | Method of thin film deposition in trenches |
US11629402B2 (en) | 2019-04-16 | 2023-04-18 | Applied Materials, Inc. | Atomic layer deposition on optical structures |
US11732353B2 (en) | 2019-04-26 | 2023-08-22 | Applied Materials, Inc. | Methods of protecting aerospace components against corrosion and oxidation |
US11794382B2 (en) | 2019-05-16 | 2023-10-24 | Applied Materials, Inc. | Methods for depositing anti-coking protective coatings on aerospace components |
TW202110575A (zh) | 2019-05-29 | 2021-03-16 | 美商應用材料股份有限公司 | 用於化學機械研磨系統的蒸氣處置站 |
US11628478B2 (en) | 2019-05-29 | 2023-04-18 | Applied Materials, Inc. | Steam cleaning of CMP components |
US11633833B2 (en) | 2019-05-29 | 2023-04-25 | Applied Materials, Inc. | Use of steam for pre-heating of CMP components |
US11697879B2 (en) | 2019-06-14 | 2023-07-11 | Applied Materials, Inc. | Methods for depositing sacrificial coatings on aerospace components |
TWI790050B (zh) * | 2019-06-27 | 2023-01-11 | 美商應用材料股份有限公司 | 用於化學機械研磨的蒸汽產生 |
US11466364B2 (en) | 2019-09-06 | 2022-10-11 | Applied Materials, Inc. | Methods for forming protective coatings containing crystallized aluminum oxide |
CN115516657A (zh) * | 2020-01-22 | 2022-12-23 | 应用材料公司 | Oled层厚度和掺杂剂浓度的产线内监测 |
US11856833B2 (en) | 2020-01-22 | 2023-12-26 | Applied Materials, Inc. | In-line monitoring of OLED layer thickness and dopant concentration |
CN111334756B (zh) * | 2020-04-09 | 2021-12-03 | 深圳市华星光电半导体显示技术有限公司 | 金属蒸镀设备 |
US11519066B2 (en) | 2020-05-21 | 2022-12-06 | Applied Materials, Inc. | Nitride protective coatings on aerospace components and methods for making the same |
JP2023518650A (ja) | 2020-06-29 | 2023-05-08 | アプライド マテリアルズ インコーポレイテッド | 化学機械研磨のための蒸気発生の制御 |
EP4175772A1 (en) | 2020-07-03 | 2023-05-10 | Applied Materials, Inc. | Methods for refurbishing aerospace components |
CN112342516B (zh) * | 2020-11-09 | 2022-10-18 | 湘潭宏大真空技术股份有限公司 | 磁控溅射镀膜装置 |
DE102021117574A1 (de) | 2021-07-07 | 2023-01-12 | Thyssenkrupp Steel Europe Ag | Beschichtungsanlage zur Beschichtung eines flächigen Gegenstands sowie ein Verfahren zum Beschichten eines flächigen Gegenstands |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001003168A (ja) * | 1999-06-18 | 2001-01-09 | Sony Corp | 真空成膜装置 |
JP4078813B2 (ja) * | 2001-06-12 | 2008-04-23 | ソニー株式会社 | 成膜装置および成膜方法 |
US20040035360A1 (en) * | 2002-05-17 | 2004-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus |
JP4286496B2 (ja) * | 2002-07-04 | 2009-07-01 | 株式会社半導体エネルギー研究所 | 蒸着装置及び薄膜作製方法 |
JP4156885B2 (ja) * | 2002-09-11 | 2008-09-24 | 株式会社アルバック | 薄膜形成装置 |
KR101006938B1 (ko) * | 2002-09-20 | 2011-01-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 제조 시스템 및 발광장치 제작방법 |
JP4447256B2 (ja) * | 2003-06-27 | 2010-04-07 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
JP4538650B2 (ja) * | 2004-06-18 | 2010-09-08 | 京セラ株式会社 | 蒸着装置 |
KR100964224B1 (ko) | 2008-02-28 | 2010-06-17 | 삼성모바일디스플레이주식회사 | 증착 장치 및 박막 형성 방법 |
KR20090130559A (ko) * | 2008-06-16 | 2009-12-24 | 삼성모바일디스플레이주식회사 | 이송 장치 및 이를 구비하는 유기물 증착 장치 |
KR100926437B1 (ko) * | 2008-11-17 | 2009-11-13 | 에스엔유 프리시젼 주식회사 | 증착 물질 공급 장치 및 이를 구비한 기판 처리 장치 |
KR101097737B1 (ko) * | 2009-03-31 | 2011-12-22 | 에스엔유 프리시젼 주식회사 | 박막 증착 장치와 박막 증착 방법 및 박막 증착 시스템 |
US20100279021A1 (en) * | 2009-05-04 | 2010-11-04 | Samsung Mobile Display Co., Ltd. | Apparatus for depositing organic material and depositing method thereof |
JP5694679B2 (ja) | 2009-05-04 | 2015-04-01 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 有機物蒸着装置及び蒸着方法 |
KR100977374B1 (ko) * | 2009-08-03 | 2010-08-20 | 텔리오솔라 테크놀로지스 인크 | 대면적 박막형 cigs 태양전지 고속증착 및 양산장비, 그 공정방법 |
KR101662606B1 (ko) * | 2010-05-11 | 2016-10-05 | 엘지디스플레이 주식회사 | 유기박막 증착장치 및 이를 이용한 유기전계발광소자의 제조방법 |
KR101708420B1 (ko) * | 2010-09-15 | 2017-02-21 | 삼성디스플레이 주식회사 | 기판 증착 시스템 및 이를 이용한 증착 방법 |
US9093646B2 (en) * | 2010-12-14 | 2015-07-28 | Sharp Kabushiki Kaisha | Vapor deposition method and method for manufacturing organic electroluminescent display device |
US8845808B2 (en) | 2010-12-24 | 2014-09-30 | Sharp Kabushiki Kaisha | Vapor deposition device, vapor deposition method, and method of manufacturing organic electroluminescent display device |
JP2012233242A (ja) * | 2011-05-09 | 2012-11-29 | Hitachi High-Technologies Corp | 有機elデバイス製造装置及び有機elデバイス製造方法 |
JP2013167001A (ja) * | 2012-02-16 | 2013-08-29 | Hitachi High-Technologies Corp | 真空蒸着システム及び真空蒸着方法 |
-
2013
- 2013-12-10 JP JP2016537004A patent/JP6328766B2/ja active Active
- 2013-12-10 US US15/100,282 patent/US20170005297A1/en not_active Abandoned
- 2013-12-10 CN CN201380081500.6A patent/CN105814231B/zh active Active
- 2013-12-10 KR KR1020177000782A patent/KR101927925B1/ko active IP Right Grant
- 2013-12-10 KR KR1020167018445A patent/KR101920333B1/ko active IP Right Grant
- 2013-12-10 EP EP17150278.4A patent/EP3187618A1/en not_active Withdrawn
- 2013-12-10 CN CN201710018205.6A patent/CN106995911B/zh active Active
- 2013-12-10 EP EP13802641.4A patent/EP3080327A1/en not_active Withdrawn
- 2013-12-10 WO PCT/EP2013/076120 patent/WO2015086049A1/en active Application Filing
-
2014
- 2014-08-19 WO PCT/EP2014/067673 patent/WO2015086168A1/en active Application Filing
- 2014-08-19 US US15/039,397 patent/US20190032194A2/en not_active Abandoned
- 2014-08-19 CN CN201480066877.9A patent/CN106068334B/zh active Active
- 2014-08-19 JP JP2016537025A patent/JP6568853B2/ja active Active
- 2014-08-19 KR KR1020167018525A patent/KR101903139B1/ko active IP Right Grant
- 2014-12-01 TW TW103141635A patent/TWI604553B/zh not_active IP Right Cessation
- 2014-12-01 TW TW106132201A patent/TWI611497B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP3080327A1 (en) | 2016-10-19 |
TW201802994A (zh) | 2018-01-16 |
KR101920333B1 (ko) | 2018-11-20 |
US20190032194A2 (en) | 2019-01-31 |
CN106068334B (zh) | 2018-11-13 |
TWI611497B (zh) | 2018-01-11 |
KR101927925B1 (ko) | 2018-12-11 |
WO2015086168A8 (en) | 2016-06-09 |
WO2015086168A1 (en) | 2015-06-18 |
JP6328766B2 (ja) | 2018-05-23 |
KR20160098342A (ko) | 2016-08-18 |
JP2017500446A (ja) | 2017-01-05 |
CN106995911B (zh) | 2020-07-31 |
KR20160098333A (ko) | 2016-08-18 |
KR20170007545A (ko) | 2017-01-18 |
CN105814231B (zh) | 2020-03-06 |
CN106995911A (zh) | 2017-08-01 |
EP3187618A1 (en) | 2017-07-05 |
CN105814231A (zh) | 2016-07-27 |
KR101903139B1 (ko) | 2018-10-01 |
CN106068334A (zh) | 2016-11-02 |
WO2015086049A1 (en) | 2015-06-18 |
TWI604553B (zh) | 2017-11-01 |
TW201528411A (zh) | 2015-07-16 |
US20170022601A1 (en) | 2017-01-26 |
US20170005297A1 (en) | 2017-01-05 |
JP2017500447A (ja) | 2017-01-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6568853B2 (ja) | デバイスを処理するための処理装置、及び処理真空チャンバから保守真空チャンバへ又は保守真空チャンバから処理真空チャンバへ蒸発源を移送するための方法 | |
JP2017500447A5 (ja) | 処理デバイス用の処理装置、及び処理真空チャンバから保守真空チャンバへ又は保守真空チャンバから処理真空チャンバへ蒸発源を移送するための方法 | |
TWI659785B (zh) | 蒸發源、具有蒸發源的沉積設備、具有存在有蒸發源之沉積設備的系統、以及用於處理蒸發源的方法 | |
JP6704348B2 (ja) | 有機材料用の蒸発源 | |
JP6466469B2 (ja) | 有機材料用の蒸発源 | |
JP6633185B2 (ja) | 材料堆積装置、真空堆積システム及びそのための方法 | |
US20210269912A1 (en) | Evaporation source for organic material, deposition apparatus for depositing organic materials in a vacuum chamber having an evaporation source for organic material, and method for evaporating organic material | |
JP6550464B2 (ja) | 材料堆積システム及び材料堆積システムで材料を堆積する方法 | |
WO2016070943A1 (en) | Material source arrangment and material distribution arrangement for vacuum deposition | |
JP6343036B2 (ja) | 有機材料用の蒸発源、有機材料用の蒸発源を有する真空チャンバにおいて有機材料を堆積するための堆積装置、及び有機材料を蒸発させるための方法 | |
JP6605073B2 (ja) | 有機材料用の蒸発源、有機材料用の蒸発源を有する真空チャンバにおいて有機材料を堆積するための堆積装置、及び有機材料を蒸発させるための方法 | |
JP6833610B2 (ja) | 有機材料用の蒸発源、有機材料用の蒸発源を有する装置、有機材料用の蒸発源を含む蒸発堆積装置を有するシステム、及び有機材料用の蒸発源を操作するための方法 | |
EP3080328A1 (en) | A processing apparatus for processing devices, particularly devices including organic materials therein, and method for transferring an evaporation source from a processing vacuum chamber to a maintenance vacuum chamber or from the maintenance vacuum chamber to the processing vacuum chamber | |
JP2019214791A (ja) | 有機材料用の蒸発源 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170816 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170816 |
|
A524 | Written submission of copy of amendment under article 19 pct |
Free format text: JAPANESE INTERMEDIATE CODE: A524 Effective date: 20180226 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20180226 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180416 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20180412 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180424 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180713 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180911 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181206 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190219 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190520 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190716 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190805 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6568853 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |