JP2017500447A - 処理デバイス用、特に内部に有機材料を含むデバイス用の処理装置、及び処理真空チャンバから保守真空チャンバへ又は保守真空チャンバから処理真空チャンバへ蒸発源を移送するための方法 - Google Patents
処理デバイス用、特に内部に有機材料を含むデバイス用の処理装置、及び処理真空チャンバから保守真空チャンバへ又は保守真空チャンバから処理真空チャンバへ蒸発源を移送するための方法 Download PDFInfo
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- 238000001704 evaporation Methods 0.000 title claims abstract description 281
- 230000008020 evaporation Effects 0.000 title claims abstract description 275
- 238000012545 processing Methods 0.000 title claims abstract description 251
- 238000012423 maintenance Methods 0.000 title claims abstract description 148
- 239000011368 organic material Substances 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims description 69
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- 238000004140 cleaning Methods 0.000 description 1
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
- C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
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- H10K71/10—Deposition of organic active material
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- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
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Abstract
Description
Claims (15)
- 処理デバイス用、特に内部に有機材料を含むデバイス用の処理装置であって、
処理真空チャンバと、
材料用の少なくとも1つの蒸発源であって、前記少なくとも1つの蒸発源が、
前記材料を蒸発させるように構成されている少なくとも1つの蒸発るつぼと、
前記少なくとも1つの蒸発るつぼと流体連通している、一又は複数の排出口を有する少なくとも1つの分配管と
を備える蒸発源と
を備え、
更に、
前記処理真空チャンバと連結された保守真空チャンバであって、前記少なくとも1つの蒸発源を、前記処理真空チャンバから前記保守真空チャンバへ及び前記保守真空チャンバから前記処理真空チャンバへ移送することができる、保守真空チャンバを備える処理装置。 - 前記少なくとも1つの蒸発源が、前記分配管に対する支持体を含む、請求項1に記載の処理装置。
- 前記支持体が、第1のドライバに連結可能であり又は前記第1のドライバを含み、前記第1のドライバが、特に前記処理真空チャンバ内で、前記蒸発源の並進運動のために構成される、請求項2に記載の処理装置。
- 前記蒸発源の前記蒸発るつぼ及び前記分配管は、前記処理真空チャンバから前記保守真空チャンバへ及び前記保守真空チャンバから前記処理真空チャンバへ移送することができ、前記分配管に対する前記支持体が、前記処理真空チャンバから前記保守真空チャンバへ及び前記保守真空チャンバから前記処理真空チャンバへ移送されない、請求項2又は3に記載の処理装置。
- 前記保守真空チャンバ及び前記処理真空チャンバの連結部が開口を含み、前記開口が、前記処理真空チャンバから前記保守真空チャンバへ及び前記保守真空チャンバから前記処理真空チャンバへの前記蒸発源の前記移送のために構成される、請求項1から4の何れか一項に記載の処理装置。
- 前記開口を閉鎖するように構成された密閉デバイスを更に含み、特に前記密閉デバイスが、前記開口を実質的に真空気密に密閉するように構成される、請求項5に記載の処理装置。
- 前記密閉デバイスは、前記少なくとも1つの蒸発源に取り付けられる、請求項6に記載の処理装置。
- 少なくとも前記分配管及び前記蒸発るつぼが、前記密閉デバイスに対して移動可能である、請求項6又は7に記載の処理装置。
- 前記処理真空チャンバの中に配置され、少なくとも2つのトラックを有する蒸発源支持体システムを更に含み、前記蒸発源支持体システムの前記少なくとも2つのトラックが、少なくとも前記処理真空チャンバ内で前記蒸発源の並進運動のために構成される、請求項1から8の何れか一項に記載の処理装置。
- 前記少なくとも2つのトラックのうちの各々が、第1のトラックセクション及び第2のトラックセクションを含み、前記第1のトラックセクション及び前記第2のトラックセクションが分離可能である、請求項9に記載の処理装置。
- 前記第1のトラックセクションが、前記蒸発源と共に、前記処理真空チャンバから前記保守真空チャンバへ及び前記保守真空チャンバから前記処理真空チャンバへ移送可能であるように構成される、請求項10に記載の処理装置。
- バルブを介して前記処理真空チャンバと連結されたもう1つの真空チャンバを更に含み、前記更なる真空チャンバが、前記処理真空チャンバ内への及び前記処理真空チャンバからの基板の搬送のために構成される、請求項1から11の何れか一項に記載の処理装置。
- 処理デバイス用、特に内部に有機材料を含むデバイス用の処理装置であって、
処理真空チャンバと、
材料用の少なくとも1つの蒸発源であって、
前記材料を蒸発させるように構成されている少なくとも1つの蒸発るつぼと、
前記少なくとも1つの蒸発るつぼと流体連通している、一又は複数の排出口を有する少なくとも1つの分配管と
を備える蒸発源と
を備え、
更に、
前記処理真空チャンバと連結された保守真空チャンバであって、前記少なくとも1つの蒸発源を、前記処理真空チャンバから前記保守真空チャンバへ及び前記保守真空チャンバから前記処理真空チャンバへ移送することができる保守真空チャンバを備え、
前記保守真空チャンバ及び前記処理真空チャンバの前記連結部が開口を含み、前記開口が、前記処理真空チャンバから前記保守真空チャンバへ及び前記保守真空チャンバから前記処理真空チャンバへ前記少なくとも1つの蒸発源の前記移送のために構成され、前記開口が密閉デバイスによって閉鎖可能であり、前記密閉デバイスが、前記少なくとも1つの蒸発源に取り付けられる、処理装置。 - 処理真空チャンバから保守真空チャンバへ又は前記保守真空チャンバから前記処理真空チャンバへ蒸発源を移送するための方法であって、
前記処理真空チャンバと前記保守真空チャンバとの間に提供された開口を通して、前記処理真空チャンバから前記保守真空チャンバへ又は前記保守真空チャンバから前記処理真空チャンバへ、前記蒸発源の蒸発るつぼ及び分配管を移動させることを含む方法。 - 更に、
前記開口を通して、前記処理真空チャンバから前記保守真空チャンバへ又は前記保守真空チャンバから前記処理真空チャンバへ、前記蒸発源の前記蒸発るつぼ及び前記分配管と共に前記処理真空チャンバの中に配置された蒸発源支持体システムのトラックの2つのトラックセクションのうちの第1のトラックセクションを移動させること、及び/又は
前記蒸発源に取り付けられた密閉デバイスを使用して、前記開口を密閉すること
を含む、請求項14に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2013/076120 WO2015086049A1 (en) | 2013-12-10 | 2013-12-10 | Evaporation source for organic material, apparatus having an evaporation source for organic material, system having an evaporation deposition apparatus with an evaporation source for organic materials, and method for operating an evaporation source for organic material |
EPPCT/EP2013/076120 | 2013-12-10 | ||
PCT/EP2014/067673 WO2015086168A1 (en) | 2013-12-10 | 2014-08-19 | A processing apparatus for processing devices, particularly devices including organic materials therein, and method for transferring an evaporation source from a processing vacuum chamber to a maintenance vacuum chamber or from the maintenance vacuum chamber to the processing vacuum chamber |
Publications (3)
Publication Number | Publication Date |
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JP2017500447A true JP2017500447A (ja) | 2017-01-05 |
JP2017500447A5 JP2017500447A5 (ja) | 2018-04-05 |
JP6568853B2 JP6568853B2 (ja) | 2019-08-28 |
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JP2016537025A Active JP6568853B2 (ja) | 2013-12-10 | 2014-08-19 | デバイスを処理するための処理装置、及び処理真空チャンバから保守真空チャンバへ又は保守真空チャンバから処理真空チャンバへ蒸発源を移送するための方法 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019510129A (ja) * | 2017-02-03 | 2019-04-11 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 隣り合う基板を有する連続蒸発のための装置及び方法 |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101932943B1 (ko) * | 2014-12-05 | 2018-12-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 재료 증착 시스템 및 재료 증착 시스템에서 재료를 증착하기 위한 방법 |
JP6488400B2 (ja) * | 2015-07-13 | 2019-03-20 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 蒸発源 |
CN109477204B (zh) * | 2016-05-10 | 2020-10-23 | 应用材料公司 | 操作沉积设备的方法和沉积设备 |
US20190292653A1 (en) * | 2016-05-18 | 2019-09-26 | Stefan Bangert | Apparatus and method for transportation of a deposition source |
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US11004704B2 (en) | 2017-03-17 | 2021-05-11 | Applied Materials, Inc. | Finned rotor cover |
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US20200243768A1 (en) * | 2017-03-17 | 2020-07-30 | Applied Materials, Inc. | Methods of operating a vacuum processing system |
JP6549314B2 (ja) * | 2017-03-17 | 2019-07-24 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 堆積システム、堆積装置、及び堆積システムを操作する方法 |
US20200016557A1 (en) * | 2017-04-07 | 2020-01-16 | Andre Brüning | Supply line guide for a vacuum processing system, use of a supply line guide and processing system |
EP3642633A4 (en) | 2017-06-21 | 2021-05-12 | Abbott Molecular Inc. | METHODS FOR AUTOMATED LOADING AND PROCESSING OF SAMPLES AND ASSOCIATED DEVICES AND SYSTEMS |
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US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
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US11028480B2 (en) | 2018-03-19 | 2021-06-08 | Applied Materials, Inc. | Methods of protecting metallic components against corrosion using chromium-containing thin films |
WO2019209401A1 (en) | 2018-04-27 | 2019-10-31 | Applied Materials, Inc. | Protection of components from corrosion |
CN214361638U (zh) * | 2018-05-30 | 2021-10-08 | 应用材料公司 | 沉积设备 |
WO2020030252A1 (en) * | 2018-08-07 | 2020-02-13 | Applied Materials, Inc. | Material deposition apparatus, vacuum deposition system and method of processing a large area substrate |
US11009339B2 (en) | 2018-08-23 | 2021-05-18 | Applied Materials, Inc. | Measurement of thickness of thermal barrier coatings using 3D imaging and surface subtraction methods for objects with complex geometries |
KR20200046463A (ko) * | 2018-10-24 | 2020-05-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 도가니 교체를 위한 증발 증착 시스템 |
US11512389B2 (en) | 2019-03-20 | 2022-11-29 | Samsung Electronincs Co., Ltd. | Apparatus for and method of manufacturing semiconductor device |
CN113795908A (zh) | 2019-04-08 | 2021-12-14 | 应用材料公司 | 用于修改光刻胶轮廓和调整临界尺寸的方法 |
CN113677825B (zh) | 2019-04-16 | 2023-10-24 | 应用材料公司 | 沟槽中薄膜沉积的方法 |
US11629402B2 (en) | 2019-04-16 | 2023-04-18 | Applied Materials, Inc. | Atomic layer deposition on optical structures |
EP3959356A4 (en) | 2019-04-26 | 2023-01-18 | Applied Materials, Inc. | METHODS FOR PROTECTING AEROSPACE ELEMENTS AGAINST CORROSION AND OXIDATION |
US11794382B2 (en) | 2019-05-16 | 2023-10-24 | Applied Materials, Inc. | Methods for depositing anti-coking protective coatings on aerospace components |
US11628478B2 (en) | 2019-05-29 | 2023-04-18 | Applied Materials, Inc. | Steam cleaning of CMP components |
US11633833B2 (en) | 2019-05-29 | 2023-04-25 | Applied Materials, Inc. | Use of steam for pre-heating of CMP components |
TW202110575A (zh) | 2019-05-29 | 2021-03-16 | 美商應用材料股份有限公司 | 用於化學機械研磨系統的蒸氣處置站 |
US11697879B2 (en) | 2019-06-14 | 2023-07-11 | Applied Materials, Inc. | Methods for depositing sacrificial coatings on aerospace components |
TWI753460B (zh) * | 2019-06-27 | 2022-01-21 | 美商應用材料股份有限公司 | 用於化學機械研磨的蒸汽產生 |
US11466364B2 (en) | 2019-09-06 | 2022-10-11 | Applied Materials, Inc. | Methods for forming protective coatings containing crystallized aluminum oxide |
EP4094307A4 (en) * | 2020-01-22 | 2024-02-28 | Applied Materials, Inc. | ONLINE MONITORING OF OLED LAYER THICKNESS AND DOPANT CONCENTRATION |
CN115088092A (zh) | 2020-01-22 | 2022-09-20 | 应用材料公司 | Oled层厚度和掺杂剂浓度的产线内监测 |
CN111334756B (zh) * | 2020-04-09 | 2021-12-03 | 深圳市华星光电半导体显示技术有限公司 | 金属蒸镀设备 |
US11519066B2 (en) | 2020-05-21 | 2022-12-06 | Applied Materials, Inc. | Nitride protective coatings on aerospace components and methods for making the same |
WO2021245154A1 (en) * | 2020-06-03 | 2021-12-09 | Applied Materials, Inc. | Deposition apparatus, processing system, and method of manufacturing a layer of an optoelectronic device |
KR20220116324A (ko) | 2020-06-29 | 2022-08-22 | 어플라이드 머티어리얼스, 인코포레이티드 | 화학 기계적 연마를 위한 스팀 생성의 제어 |
WO2022005696A1 (en) | 2020-07-03 | 2022-01-06 | Applied Materials, Inc. | Methods for refurbishing aerospace components |
CN112342516B (zh) * | 2020-11-09 | 2022-10-18 | 湘潭宏大真空技术股份有限公司 | 磁控溅射镀膜装置 |
DE102021117574A1 (de) | 2021-07-07 | 2023-01-12 | Thyssenkrupp Steel Europe Ag | Beschichtungsanlage zur Beschichtung eines flächigen Gegenstands sowie ein Verfahren zum Beschichten eines flächigen Gegenstands |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001003168A (ja) * | 1999-06-18 | 2001-01-09 | Sony Corp | 真空成膜装置 |
JP2012508815A (ja) * | 2008-11-17 | 2012-04-12 | エスエヌユー プレシジョン カンパニー,リミテッド | 蒸着物質供給装置およびこれを備えた基板処理装置 |
JP2012233242A (ja) * | 2011-05-09 | 2012-11-29 | Hitachi High-Technologies Corp | 有機elデバイス製造装置及び有機elデバイス製造方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4078813B2 (ja) * | 2001-06-12 | 2008-04-23 | ソニー株式会社 | 成膜装置および成膜方法 |
US20040035360A1 (en) * | 2002-05-17 | 2004-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus |
JP4286496B2 (ja) * | 2002-07-04 | 2009-07-01 | 株式会社半導体エネルギー研究所 | 蒸着装置及び薄膜作製方法 |
JP4156885B2 (ja) * | 2002-09-11 | 2008-09-24 | 株式会社アルバック | 薄膜形成装置 |
KR101006938B1 (ko) * | 2002-09-20 | 2011-01-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 제조 시스템 및 발광장치 제작방법 |
JP4447256B2 (ja) * | 2003-06-27 | 2010-04-07 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
JP4538650B2 (ja) * | 2004-06-18 | 2010-09-08 | 京セラ株式会社 | 蒸着装置 |
KR100964224B1 (ko) * | 2008-02-28 | 2010-06-17 | 삼성모바일디스플레이주식회사 | 증착 장치 및 박막 형성 방법 |
KR20090130559A (ko) * | 2008-06-16 | 2009-12-24 | 삼성모바일디스플레이주식회사 | 이송 장치 및 이를 구비하는 유기물 증착 장치 |
KR101097737B1 (ko) * | 2009-03-31 | 2011-12-22 | 에스엔유 프리시젼 주식회사 | 박막 증착 장치와 박막 증착 방법 및 박막 증착 시스템 |
JP5694679B2 (ja) * | 2009-05-04 | 2015-04-01 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 有機物蒸着装置及び蒸着方法 |
US20100279021A1 (en) * | 2009-05-04 | 2010-11-04 | Samsung Mobile Display Co., Ltd. | Apparatus for depositing organic material and depositing method thereof |
KR100977374B1 (ko) * | 2009-08-03 | 2010-08-20 | 텔리오솔라 테크놀로지스 인크 | 대면적 박막형 cigs 태양전지 고속증착 및 양산장비, 그 공정방법 |
KR101662606B1 (ko) * | 2010-05-11 | 2016-10-05 | 엘지디스플레이 주식회사 | 유기박막 증착장치 및 이를 이용한 유기전계발광소자의 제조방법 |
KR101708420B1 (ko) * | 2010-09-15 | 2017-02-21 | 삼성디스플레이 주식회사 | 기판 증착 시스템 및 이를 이용한 증착 방법 |
US9093646B2 (en) * | 2010-12-14 | 2015-07-28 | Sharp Kabushiki Kaisha | Vapor deposition method and method for manufacturing organic electroluminescent display device |
WO2012086568A1 (ja) * | 2010-12-24 | 2012-06-28 | シャープ株式会社 | 蒸着装置、蒸着方法、並びに、有機エレクトロルミネッセンス表示装置の製造方法 |
JP2013167001A (ja) * | 2012-02-16 | 2013-08-29 | Hitachi High-Technologies Corp | 真空蒸着システム及び真空蒸着方法 |
-
2013
- 2013-12-10 EP EP17150278.4A patent/EP3187618A1/en not_active Withdrawn
- 2013-12-10 CN CN201710018205.6A patent/CN106995911B/zh active Active
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001003168A (ja) * | 1999-06-18 | 2001-01-09 | Sony Corp | 真空成膜装置 |
JP2012508815A (ja) * | 2008-11-17 | 2012-04-12 | エスエヌユー プレシジョン カンパニー,リミテッド | 蒸着物質供給装置およびこれを備えた基板処理装置 |
JP2012233242A (ja) * | 2011-05-09 | 2012-11-29 | Hitachi High-Technologies Corp | 有機elデバイス製造装置及び有機elデバイス製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019510129A (ja) * | 2017-02-03 | 2019-04-11 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 隣り合う基板を有する連続蒸発のための装置及び方法 |
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EP3187618A1 (en) | 2017-07-05 |
KR20160098333A (ko) | 2016-08-18 |
CN106068334B (zh) | 2018-11-13 |
CN106068334A (zh) | 2016-11-02 |
KR20160098342A (ko) | 2016-08-18 |
US20170005297A1 (en) | 2017-01-05 |
CN106995911A (zh) | 2017-08-01 |
CN106995911B (zh) | 2020-07-31 |
CN105814231B (zh) | 2020-03-06 |
TW201802994A (zh) | 2018-01-16 |
KR101920333B1 (ko) | 2018-11-20 |
KR20170007545A (ko) | 2017-01-18 |
WO2015086168A1 (en) | 2015-06-18 |
US20170022601A1 (en) | 2017-01-26 |
TW201528411A (zh) | 2015-07-16 |
CN105814231A (zh) | 2016-07-27 |
WO2015086049A1 (en) | 2015-06-18 |
TWI611497B (zh) | 2018-01-11 |
KR101927925B1 (ko) | 2018-12-11 |
JP6328766B2 (ja) | 2018-05-23 |
JP2017500446A (ja) | 2017-01-05 |
KR101903139B1 (ko) | 2018-10-01 |
TWI604553B (zh) | 2017-11-01 |
WO2015086168A8 (en) | 2016-06-09 |
US20190032194A2 (en) | 2019-01-31 |
JP6568853B2 (ja) | 2019-08-28 |
EP3080327A1 (en) | 2016-10-19 |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |