JP6567501B2 - 多結晶質シリコンの製造方法 - Google Patents

多結晶質シリコンの製造方法 Download PDF

Info

Publication number
JP6567501B2
JP6567501B2 JP2016509348A JP2016509348A JP6567501B2 JP 6567501 B2 JP6567501 B2 JP 6567501B2 JP 2016509348 A JP2016509348 A JP 2016509348A JP 2016509348 A JP2016509348 A JP 2016509348A JP 6567501 B2 JP6567501 B2 JP 6567501B2
Authority
JP
Japan
Prior art keywords
rod
lock
polycrystalline silicon
silicon
reactor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016509348A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016516666A5 (cg-RX-API-DMAC7.html
JP2016516666A (ja
Inventor
ミヒャエル、ケルシャー
ライナー、ペヒ
アーミン、サンドナー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wacker Chemie AG
Original Assignee
Wacker Chemie AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemie AG filed Critical Wacker Chemie AG
Publication of JP2016516666A publication Critical patent/JP2016516666A/ja
Publication of JP2016516666A5 publication Critical patent/JP2016516666A5/ja
Application granted granted Critical
Publication of JP6567501B2 publication Critical patent/JP6567501B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
    • B02C—CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN
    • B02C23/00—Auxiliary methods or auxiliary devices or accessories specially adapted for crushing or disintegrating not provided for in preceding groups or not specially adapted to apparatus covered by a single preceding group
    • B02C23/08—Separating or sorting of material, associated with crushing or disintegrating
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/04—Analysing solids
    • G01N29/09—Analysing solids by measuring mechanical or acoustic impedance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/02—Indexing codes associated with the analysed material
    • G01N2291/023—Solids
    • G01N2291/0234—Metals, e.g. steel
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Acoustics & Sound (AREA)
  • Food Science & Technology (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2016509348A 2013-04-22 2014-03-24 多結晶質シリコンの製造方法 Active JP6567501B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE201310207251 DE102013207251A1 (de) 2013-04-22 2013-04-22 Verfahren zur Herstellung von polykristallinem Silicium
DE102013207251.1 2013-04-22
PCT/EP2014/055837 WO2014173596A1 (de) 2013-04-22 2014-03-24 Verfahren zur herstellung von polykristallinem silicium

Publications (3)

Publication Number Publication Date
JP2016516666A JP2016516666A (ja) 2016-06-09
JP2016516666A5 JP2016516666A5 (cg-RX-API-DMAC7.html) 2019-02-14
JP6567501B2 true JP6567501B2 (ja) 2019-08-28

Family

ID=50397128

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016509348A Active JP6567501B2 (ja) 2013-04-22 2014-03-24 多結晶質シリコンの製造方法

Country Status (11)

Country Link
US (1) US10400329B2 (cg-RX-API-DMAC7.html)
EP (1) EP2989052B1 (cg-RX-API-DMAC7.html)
JP (1) JP6567501B2 (cg-RX-API-DMAC7.html)
KR (1) KR101801757B1 (cg-RX-API-DMAC7.html)
CN (2) CN110092383A (cg-RX-API-DMAC7.html)
DE (1) DE102013207251A1 (cg-RX-API-DMAC7.html)
ES (1) ES2677489T3 (cg-RX-API-DMAC7.html)
MY (1) MY178822A (cg-RX-API-DMAC7.html)
SA (1) SA515370027B1 (cg-RX-API-DMAC7.html)
TW (1) TWI516446B (cg-RX-API-DMAC7.html)
WO (1) WO2014173596A1 (cg-RX-API-DMAC7.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020234401A1 (de) 2019-05-21 2020-11-26 Wacker Chemie Ag Verfahren zur herstellung von polykristallinem silicium
US12180078B2 (en) 2019-05-21 2024-12-31 Wacker Chemie Ag Process for producing polycrystalline silicon
KR102761414B1 (ko) 2019-06-11 2025-01-31 와커 헤미 아게 다결정 실리콘의 제조 방법
KR102711635B1 (ko) * 2019-08-29 2024-09-30 와커 헤미 아게 실리콘 조각의 제조 방법
CN110967466B (zh) * 2019-11-13 2022-05-17 鞍钢集团矿业有限公司 采场空区稳定性的评价方法
CN113727944A (zh) 2019-12-17 2021-11-30 瓦克化学股份公司 生产和分类多晶硅的方法
CN111545327B (zh) * 2020-05-19 2021-09-17 铜仁职业技术学院 一种矿石加工装置
CN115591643B (zh) * 2022-10-21 2025-05-09 新特能源股份有限公司 一种硅棒的料性识别和区分方法、控制装置、控制系统、电子设备及存储介质
CN120584087A (zh) 2023-02-14 2025-09-02 株式会社德山 多晶硅中微粉的产生容易度的推定方法、推定装置、多晶硅的制造方法、已学习模型的生成装置以及生成方法
CN117103478B (zh) * 2023-08-24 2025-12-30 西安奕斯伟材料科技股份有限公司 一种用于对不合格晶棒节段进行破碎的系统及方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1015422A (ja) * 1996-07-03 1998-01-20 Sumitomo Sitix Corp 多結晶シリコンの破砕方法
DE19741465A1 (de) 1997-09-19 1999-03-25 Wacker Chemie Gmbh Polykristallines Silicium
DE10019601B4 (de) 2000-04-20 2006-09-14 Wacker Chemie Ag Verfahren zur Herstellung eines polykristallinen Siliciumstabes
JP2006206387A (ja) * 2005-01-28 2006-08-10 Mitsubishi Materials Corp 多結晶シリコン還元炉及び多結晶シリコンロッド
DE102005019873B4 (de) 2005-04-28 2017-05-18 Wacker Chemie Ag Vorrichtung und Verfahren zum maschinellen Zerkleinern von Halbleitermaterialien
DE102006016323A1 (de) 2006-04-06 2007-10-11 Wacker Chemie Ag Verfahren und Vorrichtung zum Zerkleinern und Sortieren von Polysilicium
DE102006016324A1 (de) * 2006-04-06 2007-10-25 Wacker Chemie Ag Vorrichtung und Verfahren zum flexiblen Klassieren von polykristallinen Silicium-Bruchstücken
KR100768148B1 (ko) * 2006-05-22 2007-10-17 한국화학연구원 금속 코어수단을 이용한 다결정 실리콘 봉의 제조방법
DE102006040486A1 (de) * 2006-08-30 2008-03-13 Wacker Chemie Ag Verfahren zur zerstörungsfreien Materialprüfung von hochreinem polykristallinen Silicium
DE102007023041A1 (de) 2007-05-16 2008-11-20 Wacker Chemie Ag Polykristalliner Siliciumstab für das Zonenziehen und ein Verfahren zu dessen Herstellung
EP2036856B1 (en) * 2007-09-04 2018-09-12 Mitsubishi Materials Corporation Clean bench and method of producing raw material for single crystal silicon
KR101811872B1 (ko) * 2007-09-20 2017-12-22 미츠비시 마테리알 가부시키가이샤 다결정 실리콘 반응로 및 다결정 실리콘의 제조 방법
DE102007047210A1 (de) 2007-10-02 2009-04-09 Wacker Chemie Ag Polykristallines Silicium und Verfahren zu seiner Herstellung
CN101928001A (zh) * 2009-06-25 2010-12-29 中国科学院过程工程研究所 一种制备粒状多晶硅的新型流化床反应装置
JP5751748B2 (ja) 2009-09-16 2015-07-22 信越化学工業株式会社 多結晶シリコン塊群および多結晶シリコン塊群の製造方法
JP5238762B2 (ja) * 2010-07-06 2013-07-17 信越化学工業株式会社 多結晶シリコン棒および多結晶シリコン棒の製造方法
DE102010039752A1 (de) 2010-08-25 2012-03-01 Wacker Chemie Ag Polykristallines Silicium und Verfahren zu dessen Herstellung
DE102010040093A1 (de) * 2010-09-01 2012-03-01 Wacker Chemie Ag Verfahren zur Herstellung von polykristallinem Silicium
DE102010043702A1 (de) * 2010-11-10 2012-05-10 Wacker Chemie Ag Verfahren zur Bestimmung von Verunreinigungen in Silicium
CN102515166A (zh) * 2011-12-20 2012-06-27 国电宁夏太阳能有限公司 一种多晶硅棒的制备方法
DE102012200994A1 (de) * 2012-01-24 2013-07-25 Wacker Chemie Ag Verfahren zur Bestimmung einer Oberflächen-Verunreinigung von polykristallinem Silicium

Also Published As

Publication number Publication date
US10400329B2 (en) 2019-09-03
MY178822A (en) 2020-10-20
DE102013207251A1 (de) 2014-10-23
KR20150141191A (ko) 2015-12-17
TW201441151A (zh) 2014-11-01
ES2677489T3 (es) 2018-08-02
CN110092383A (zh) 2019-08-06
SA515370027B1 (ar) 2018-07-18
KR101801757B1 (ko) 2017-11-27
EP2989052A1 (de) 2016-03-02
EP2989052B1 (de) 2018-05-30
US20160068949A1 (en) 2016-03-10
CN105339302A (zh) 2016-02-17
WO2014173596A1 (de) 2014-10-30
TWI516446B (zh) 2016-01-11
JP2016516666A (ja) 2016-06-09

Similar Documents

Publication Publication Date Title
JP6567501B2 (ja) 多結晶質シリコンの製造方法
TWI482737B (zh) 多晶矽棒和其生產方法
KR102415059B1 (ko) 다결정 실리콘 파쇄물의 제조 방법 및 다결정 실리콘 파쇄물의 표면 금속 농도를 관리하는 방법
JP5940680B2 (ja) 多結晶シリコンロッドおよびポリシリコンを生成するための方法
JP6692526B2 (ja) ルツボ検査装置、ルツボ検査方法、シリカガラスルツボの製造方法、シリコンインゴットの製造方法、ホモエピタキシャルウェーハの製造方法
CN111936418B (zh) 多晶硅破碎块及其制造方法
EP3184489A1 (en) Method for manufacturing polycrystalline silicon bar and polycrystalline silicon bar
EP2594933A1 (en) Polycrystalline silicon rod and production method for polycrystalline silicon rod
CN107848808A (zh) 多晶硅棒
JP2004149324A (ja) 多結晶シリコンロッド及びその製造方法、並びにそのロッドの製造に使用されるシリコン芯材
JP5722361B2 (ja) 多結晶シリコンの表面汚染を測定する方法
WO2012004969A1 (ja) 多結晶シリコン棒および多結晶シリコン棒の検査方法ならびに多結晶シリコン棒の製造方法
TWI781436B (zh) 用於生產矽塊的方法
JP2016501177A (ja) ドープシリコンの形成及び分析方法
CN120314345A (zh) 一种区熔多晶硅应力检测方法
Hendrickx Cristobalite formation on quartz crucibles inner surface for CZ solar cell ingot production

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20151125

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20161013

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20161104

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20161115

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170203

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170303

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170531

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20170901

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20171221

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20180104

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20180216

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20181217

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190603

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20190731

R150 Certificate of patent or registration of utility model

Ref document number: 6567501

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250