SA515370027B1 - عملية لتحضير السليكون متعدد البلورات - Google Patents
عملية لتحضير السليكون متعدد البلورات Download PDFInfo
- Publication number
- SA515370027B1 SA515370027B1 SA515370027A SA515370027A SA515370027B1 SA 515370027 B1 SA515370027 B1 SA 515370027B1 SA 515370027 A SA515370027 A SA 515370027A SA 515370027 A SA515370027 A SA 515370027A SA 515370027 B1 SA515370027 B1 SA 515370027B1
- Authority
- SA
- Saudi Arabia
- Prior art keywords
- rods
- polycrystalline silicon
- rod
- reactor
- attribute
- Prior art date
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 84
- 238000000034 method Methods 0.000 title claims abstract description 35
- 230000008569 process Effects 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 29
- 239000010703 silicon Substances 0.000 claims description 29
- 238000000227 grinding Methods 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000011109 contamination Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 5
- 239000000049 pigment Substances 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 3
- 241000196324 Embryophyta Species 0.000 claims 1
- 238000005520 cutting process Methods 0.000 claims 1
- 238000012545 processing Methods 0.000 abstract description 13
- 230000008021 deposition Effects 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 229920001296 polysiloxane Polymers 0.000 description 20
- 238000004062 sedimentation Methods 0.000 description 18
- 239000000463 material Substances 0.000 description 16
- 229920005591 polysilicon Polymers 0.000 description 16
- 239000000047 product Substances 0.000 description 16
- 239000013078 crystal Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 230000007547 defect Effects 0.000 description 6
- 230000002349 favourable effect Effects 0.000 description 6
- 239000011148 porous material Substances 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 239000000975 dye Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 210000003899 penis Anatomy 0.000 description 4
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 235000013312 flour Nutrition 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000002604 ultrasonography Methods 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000004857 zone melting Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 229910021426 porous silicon Inorganic materials 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000013049 sediment Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241000581364 Clinitrachus argentatus Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101100234002 Drosophila melanogaster Shal gene Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 241001435619 Lile Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 208000034809 Product contamination Diseases 0.000 description 1
- 235000017276 Salvia Nutrition 0.000 description 1
- 241001072909 Salvia Species 0.000 description 1
- 235000015076 Shorea robusta Nutrition 0.000 description 1
- 244000166071 Shorea robusta Species 0.000 description 1
- 229910003910 SiCl4 Inorganic materials 0.000 description 1
- 235000002017 Zea mays subsp mays Nutrition 0.000 description 1
- 241000482268 Zea mays subsp. mays Species 0.000 description 1
- NIMPFLPHNFUHNK-UHFFFAOYSA-N [Si].Cl[SiH](Cl)Cl Chemical compound [Si].Cl[SiH](Cl)Cl NIMPFLPHNFUHNK-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 244000245420 ail Species 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 235000011089 carbon dioxide Nutrition 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000009535 clinical urine test Methods 0.000 description 1
- -1 cnickel Chemical compound 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000010410 dusting Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000002706 hydrostatic effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000010977 jade Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000001683 neutron diffraction Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 210000001364 upper extremity Anatomy 0.000 description 1
- 230000035899 viability Effects 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
- B02C—CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN
- B02C23/00—Auxiliary methods or auxiliary devices or accessories specially adapted for crushing or disintegrating not provided for in preceding groups or not specially adapted to apparatus covered by a single preceding group
- B02C23/08—Separating or sorting of material, associated with crushing or disintegrating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/04—Analysing solids
- G01N29/09—Analysing solids by measuring mechanical or acoustic impedance
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
- H10F77/164—Polycrystalline semiconductors
- H10F77/1642—Polycrystalline semiconductors including only Group IV materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/02—Indexing codes associated with the analysed material
- G01N2291/023—Solids
- G01N2291/0234—Metals, e.g. steel
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Acoustics & Sound (AREA)
- Food Science & Technology (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE201310207251 DE102013207251A1 (de) | 2013-04-22 | 2013-04-22 | Verfahren zur Herstellung von polykristallinem Silicium |
| PCT/EP2014/055837 WO2014173596A1 (de) | 2013-04-22 | 2014-03-24 | Verfahren zur herstellung von polykristallinem silicium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SA515370027B1 true SA515370027B1 (ar) | 2018-07-18 |
Family
ID=50397128
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SA515370027A SA515370027B1 (ar) | 2013-04-22 | 2015-10-21 | عملية لتحضير السليكون متعدد البلورات |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US10400329B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP2989052B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP6567501B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR101801757B1 (cg-RX-API-DMAC7.html) |
| CN (2) | CN110092383A (cg-RX-API-DMAC7.html) |
| DE (1) | DE102013207251A1 (cg-RX-API-DMAC7.html) |
| ES (1) | ES2677489T3 (cg-RX-API-DMAC7.html) |
| MY (1) | MY178822A (cg-RX-API-DMAC7.html) |
| SA (1) | SA515370027B1 (cg-RX-API-DMAC7.html) |
| TW (1) | TWI516446B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2014173596A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020234401A1 (de) | 2019-05-21 | 2020-11-26 | Wacker Chemie Ag | Verfahren zur herstellung von polykristallinem silicium |
| US12180078B2 (en) | 2019-05-21 | 2024-12-31 | Wacker Chemie Ag | Process for producing polycrystalline silicon |
| KR102761414B1 (ko) | 2019-06-11 | 2025-01-31 | 와커 헤미 아게 | 다결정 실리콘의 제조 방법 |
| KR102711635B1 (ko) * | 2019-08-29 | 2024-09-30 | 와커 헤미 아게 | 실리콘 조각의 제조 방법 |
| CN110967466B (zh) * | 2019-11-13 | 2022-05-17 | 鞍钢集团矿业有限公司 | 采场空区稳定性的评价方法 |
| CN113727944A (zh) | 2019-12-17 | 2021-11-30 | 瓦克化学股份公司 | 生产和分类多晶硅的方法 |
| CN111545327B (zh) * | 2020-05-19 | 2021-09-17 | 铜仁职业技术学院 | 一种矿石加工装置 |
| CN115591643B (zh) * | 2022-10-21 | 2025-05-09 | 新特能源股份有限公司 | 一种硅棒的料性识别和区分方法、控制装置、控制系统、电子设备及存储介质 |
| CN120584087A (zh) | 2023-02-14 | 2025-09-02 | 株式会社德山 | 多晶硅中微粉的产生容易度的推定方法、推定装置、多晶硅的制造方法、已学习模型的生成装置以及生成方法 |
| CN117103478B (zh) * | 2023-08-24 | 2025-12-30 | 西安奕斯伟材料科技股份有限公司 | 一种用于对不合格晶棒节段进行破碎的系统及方法 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1015422A (ja) * | 1996-07-03 | 1998-01-20 | Sumitomo Sitix Corp | 多結晶シリコンの破砕方法 |
| DE19741465A1 (de) | 1997-09-19 | 1999-03-25 | Wacker Chemie Gmbh | Polykristallines Silicium |
| DE10019601B4 (de) | 2000-04-20 | 2006-09-14 | Wacker Chemie Ag | Verfahren zur Herstellung eines polykristallinen Siliciumstabes |
| JP2006206387A (ja) * | 2005-01-28 | 2006-08-10 | Mitsubishi Materials Corp | 多結晶シリコン還元炉及び多結晶シリコンロッド |
| DE102005019873B4 (de) | 2005-04-28 | 2017-05-18 | Wacker Chemie Ag | Vorrichtung und Verfahren zum maschinellen Zerkleinern von Halbleitermaterialien |
| DE102006016323A1 (de) | 2006-04-06 | 2007-10-11 | Wacker Chemie Ag | Verfahren und Vorrichtung zum Zerkleinern und Sortieren von Polysilicium |
| DE102006016324A1 (de) * | 2006-04-06 | 2007-10-25 | Wacker Chemie Ag | Vorrichtung und Verfahren zum flexiblen Klassieren von polykristallinen Silicium-Bruchstücken |
| KR100768148B1 (ko) * | 2006-05-22 | 2007-10-17 | 한국화학연구원 | 금속 코어수단을 이용한 다결정 실리콘 봉의 제조방법 |
| DE102006040486A1 (de) * | 2006-08-30 | 2008-03-13 | Wacker Chemie Ag | Verfahren zur zerstörungsfreien Materialprüfung von hochreinem polykristallinen Silicium |
| DE102007023041A1 (de) | 2007-05-16 | 2008-11-20 | Wacker Chemie Ag | Polykristalliner Siliciumstab für das Zonenziehen und ein Verfahren zu dessen Herstellung |
| EP2036856B1 (en) * | 2007-09-04 | 2018-09-12 | Mitsubishi Materials Corporation | Clean bench and method of producing raw material for single crystal silicon |
| KR101811872B1 (ko) * | 2007-09-20 | 2017-12-22 | 미츠비시 마테리알 가부시키가이샤 | 다결정 실리콘 반응로 및 다결정 실리콘의 제조 방법 |
| DE102007047210A1 (de) | 2007-10-02 | 2009-04-09 | Wacker Chemie Ag | Polykristallines Silicium und Verfahren zu seiner Herstellung |
| CN101928001A (zh) * | 2009-06-25 | 2010-12-29 | 中国科学院过程工程研究所 | 一种制备粒状多晶硅的新型流化床反应装置 |
| JP5751748B2 (ja) | 2009-09-16 | 2015-07-22 | 信越化学工業株式会社 | 多結晶シリコン塊群および多結晶シリコン塊群の製造方法 |
| JP5238762B2 (ja) * | 2010-07-06 | 2013-07-17 | 信越化学工業株式会社 | 多結晶シリコン棒および多結晶シリコン棒の製造方法 |
| DE102010039752A1 (de) | 2010-08-25 | 2012-03-01 | Wacker Chemie Ag | Polykristallines Silicium und Verfahren zu dessen Herstellung |
| DE102010040093A1 (de) * | 2010-09-01 | 2012-03-01 | Wacker Chemie Ag | Verfahren zur Herstellung von polykristallinem Silicium |
| DE102010043702A1 (de) * | 2010-11-10 | 2012-05-10 | Wacker Chemie Ag | Verfahren zur Bestimmung von Verunreinigungen in Silicium |
| CN102515166A (zh) * | 2011-12-20 | 2012-06-27 | 国电宁夏太阳能有限公司 | 一种多晶硅棒的制备方法 |
| DE102012200994A1 (de) * | 2012-01-24 | 2013-07-25 | Wacker Chemie Ag | Verfahren zur Bestimmung einer Oberflächen-Verunreinigung von polykristallinem Silicium |
-
2013
- 2013-04-22 DE DE201310207251 patent/DE102013207251A1/de not_active Withdrawn
-
2014
- 2014-03-24 EP EP14714215.2A patent/EP2989052B1/de active Active
- 2014-03-24 KR KR1020157032942A patent/KR101801757B1/ko active Active
- 2014-03-24 CN CN201811540457.6A patent/CN110092383A/zh active Pending
- 2014-03-24 WO PCT/EP2014/055837 patent/WO2014173596A1/de not_active Ceased
- 2014-03-24 US US14/785,918 patent/US10400329B2/en active Active
- 2014-03-24 ES ES14714215.2T patent/ES2677489T3/es active Active
- 2014-03-24 CN CN201480035722.9A patent/CN105339302A/zh active Pending
- 2014-03-24 MY MYPI2015002591A patent/MY178822A/en unknown
- 2014-03-24 JP JP2016509348A patent/JP6567501B2/ja active Active
- 2014-04-22 TW TW103114536A patent/TWI516446B/zh active
-
2015
- 2015-10-21 SA SA515370027A patent/SA515370027B1/ar unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US10400329B2 (en) | 2019-09-03 |
| MY178822A (en) | 2020-10-20 |
| DE102013207251A1 (de) | 2014-10-23 |
| KR20150141191A (ko) | 2015-12-17 |
| TW201441151A (zh) | 2014-11-01 |
| ES2677489T3 (es) | 2018-08-02 |
| CN110092383A (zh) | 2019-08-06 |
| KR101801757B1 (ko) | 2017-11-27 |
| JP6567501B2 (ja) | 2019-08-28 |
| EP2989052A1 (de) | 2016-03-02 |
| EP2989052B1 (de) | 2018-05-30 |
| US20160068949A1 (en) | 2016-03-10 |
| CN105339302A (zh) | 2016-02-17 |
| WO2014173596A1 (de) | 2014-10-30 |
| TWI516446B (zh) | 2016-01-11 |
| JP2016516666A (ja) | 2016-06-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SA515370027B1 (ar) | عملية لتحضير السليكون متعدد البلورات | |
| Bullard et al. | Aeolian abrasion and modes of fine particle production from natural red dune sands: an experimental study | |
| Man et al. | Study of cyclic strain localization and fatigue crack initiation using FIB technique | |
| Serrano-Munoz et al. | Casting defects in structural components: Are they all dangerous? A 3D study | |
| DE102012207513A1 (de) | Polykristalliner Siliciumstab und Verfahren zu dessen Herstellung | |
| JP6692526B2 (ja) | ルツボ検査装置、ルツボ検査方法、シリカガラスルツボの製造方法、シリコンインゴットの製造方法、ホモエピタキシャルウェーハの製造方法 | |
| JP7107922B2 (ja) | 多結晶シリコン破砕物の製造方法、及び、多結晶シリコン破砕物の表面金属濃度を管理する方法 | |
| JP2016516666A5 (cg-RX-API-DMAC7.html) | ||
| Wu et al. | Study on small crack growth behavior of laser powder bed fused Ti6Al4V alloy | |
| Bai et al. | Deformation Behavior and Strengthening Mechanisms of an Additively Manufactured High-Entropy Alloy with Hierarchical Heterostructures | |
| Iwasaki et al. | The role of liquid phase in cavitation in a Si3N4p/Al-Mg-Si composite exhibiting high-strain-rate superplasticity | |
| Tan et al. | Effect of microstructure on the corrosion of CVD-SiC exposed to supercritical water | |
| Colucci et al. | 3-D reconstruction of ash vesicularity: insights into the origin of ash-rich explosive eruptions | |
| Shen et al. | In situ studies on temperature‐dependent deformation mechanisms of Al2O3 prepared by spark plasma sintering | |
| KR102402431B1 (ko) | 실리콘 로드에 존재하는 크랙의 검출 방법 | |
| TWI781436B (zh) | 用於生產矽塊的方法 | |
| SA516371537B1 (ar) | طريقة لإنتاج سيليكون عديد البلورات | |
| Perbost et al. | Influence of cation size on the curvature of serpentine minerals: HRTEM-AEM study and elastic theory | |
| Monarumit et al. | Role of ilmenite micro-inclusion on Fe oxidation states of natural sapphires | |
| Lu et al. | Effects of microstructure on the cracking behaviors in the lithium aluminosilicate glass ceramics: A statistical analysis | |
| Das | Characteristics of zircon of Chhatrapur beach placer deposit, Ganjam District, Odisha | |
| Khair et al. | Morphological and microstructural characterizations of the fresh fuel plates for the SEMPER FIDELIS in-pile test | |
| Evans et al. | Imaging damage evolution in a small particle metal matrix composite | |
| Hu et al. | Evidence for growing structural correlation length in colloidal supercooled liquids | |
| Li-Xia et al. | Phonon spectrum and related thermodynamic properties of microcrack in bcc-Fe |