MY178822A - Process for the preparation of polycrystalline silicon - Google Patents

Process for the preparation of polycrystalline silicon

Info

Publication number
MY178822A
MY178822A MYPI2015002591A MYPI2015002591A MY178822A MY 178822 A MY178822 A MY 178822A MY PI2015002591 A MYPI2015002591 A MY PI2015002591A MY PI2015002591 A MYPI2015002591 A MY PI2015002591A MY 178822 A MY178822 A MY 178822A
Authority
MY
Malaysia
Prior art keywords
polycrystalline silicon
preparation
reactor
silicon rods
rods
Prior art date
Application number
MYPI2015002591A
Other languages
English (en)
Inventor
Michael Kerscher Dr
Reiner Pech Dr
Sandner Armin
Original Assignee
Wacker Chemie Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemie Ag filed Critical Wacker Chemie Ag
Publication of MY178822A publication Critical patent/MY178822A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
    • B02C—CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN
    • B02C23/00—Auxiliary methods or auxiliary devices or accessories specially adapted for crushing or disintegrating not provided for in preceding groups or not specially adapted to apparatus covered by a single preceding group
    • B02C23/08—Separating or sorting of material, associated with crushing or disintegrating
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/04—Analysing solids
    • G01N29/09—Analysing solids by measuring mechanical or acoustic impedance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/02—Indexing codes associated with the analysed material
    • G01N2291/023—Solids
    • G01N2291/0234—Metals, e.g. steel
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Acoustics & Sound (AREA)
  • Food Science & Technology (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
MYPI2015002591A 2013-04-22 2014-03-24 Process for the preparation of polycrystalline silicon MY178822A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE201310207251 DE102013207251A1 (de) 2013-04-22 2013-04-22 Verfahren zur Herstellung von polykristallinem Silicium

Publications (1)

Publication Number Publication Date
MY178822A true MY178822A (en) 2020-10-20

Family

ID=50397128

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2015002591A MY178822A (en) 2013-04-22 2014-03-24 Process for the preparation of polycrystalline silicon

Country Status (11)

Country Link
US (1) US10400329B2 (cg-RX-API-DMAC7.html)
EP (1) EP2989052B1 (cg-RX-API-DMAC7.html)
JP (1) JP6567501B2 (cg-RX-API-DMAC7.html)
KR (1) KR101801757B1 (cg-RX-API-DMAC7.html)
CN (2) CN110092383A (cg-RX-API-DMAC7.html)
DE (1) DE102013207251A1 (cg-RX-API-DMAC7.html)
ES (1) ES2677489T3 (cg-RX-API-DMAC7.html)
MY (1) MY178822A (cg-RX-API-DMAC7.html)
SA (1) SA515370027B1 (cg-RX-API-DMAC7.html)
TW (1) TWI516446B (cg-RX-API-DMAC7.html)
WO (1) WO2014173596A1 (cg-RX-API-DMAC7.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020234401A1 (de) 2019-05-21 2020-11-26 Wacker Chemie Ag Verfahren zur herstellung von polykristallinem silicium
US12180078B2 (en) 2019-05-21 2024-12-31 Wacker Chemie Ag Process for producing polycrystalline silicon
KR102761414B1 (ko) 2019-06-11 2025-01-31 와커 헤미 아게 다결정 실리콘의 제조 방법
KR102711635B1 (ko) * 2019-08-29 2024-09-30 와커 헤미 아게 실리콘 조각의 제조 방법
CN110967466B (zh) * 2019-11-13 2022-05-17 鞍钢集团矿业有限公司 采场空区稳定性的评价方法
CN113727944A (zh) 2019-12-17 2021-11-30 瓦克化学股份公司 生产和分类多晶硅的方法
CN111545327B (zh) * 2020-05-19 2021-09-17 铜仁职业技术学院 一种矿石加工装置
CN115591643B (zh) * 2022-10-21 2025-05-09 新特能源股份有限公司 一种硅棒的料性识别和区分方法、控制装置、控制系统、电子设备及存储介质
CN120584087A (zh) 2023-02-14 2025-09-02 株式会社德山 多晶硅中微粉的产生容易度的推定方法、推定装置、多晶硅的制造方法、已学习模型的生成装置以及生成方法
CN117103478B (zh) * 2023-08-24 2025-12-30 西安奕斯伟材料科技股份有限公司 一种用于对不合格晶棒节段进行破碎的系统及方法

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JPH1015422A (ja) * 1996-07-03 1998-01-20 Sumitomo Sitix Corp 多結晶シリコンの破砕方法
DE19741465A1 (de) 1997-09-19 1999-03-25 Wacker Chemie Gmbh Polykristallines Silicium
DE10019601B4 (de) 2000-04-20 2006-09-14 Wacker Chemie Ag Verfahren zur Herstellung eines polykristallinen Siliciumstabes
JP2006206387A (ja) * 2005-01-28 2006-08-10 Mitsubishi Materials Corp 多結晶シリコン還元炉及び多結晶シリコンロッド
DE102005019873B4 (de) 2005-04-28 2017-05-18 Wacker Chemie Ag Vorrichtung und Verfahren zum maschinellen Zerkleinern von Halbleitermaterialien
DE102006016323A1 (de) 2006-04-06 2007-10-11 Wacker Chemie Ag Verfahren und Vorrichtung zum Zerkleinern und Sortieren von Polysilicium
DE102006016324A1 (de) * 2006-04-06 2007-10-25 Wacker Chemie Ag Vorrichtung und Verfahren zum flexiblen Klassieren von polykristallinen Silicium-Bruchstücken
KR100768148B1 (ko) * 2006-05-22 2007-10-17 한국화학연구원 금속 코어수단을 이용한 다결정 실리콘 봉의 제조방법
DE102006040486A1 (de) * 2006-08-30 2008-03-13 Wacker Chemie Ag Verfahren zur zerstörungsfreien Materialprüfung von hochreinem polykristallinen Silicium
DE102007023041A1 (de) 2007-05-16 2008-11-20 Wacker Chemie Ag Polykristalliner Siliciumstab für das Zonenziehen und ein Verfahren zu dessen Herstellung
EP2036856B1 (en) * 2007-09-04 2018-09-12 Mitsubishi Materials Corporation Clean bench and method of producing raw material for single crystal silicon
KR101811872B1 (ko) * 2007-09-20 2017-12-22 미츠비시 마테리알 가부시키가이샤 다결정 실리콘 반응로 및 다결정 실리콘의 제조 방법
DE102007047210A1 (de) 2007-10-02 2009-04-09 Wacker Chemie Ag Polykristallines Silicium und Verfahren zu seiner Herstellung
CN101928001A (zh) * 2009-06-25 2010-12-29 中国科学院过程工程研究所 一种制备粒状多晶硅的新型流化床反应装置
JP5751748B2 (ja) 2009-09-16 2015-07-22 信越化学工業株式会社 多結晶シリコン塊群および多結晶シリコン塊群の製造方法
JP5238762B2 (ja) * 2010-07-06 2013-07-17 信越化学工業株式会社 多結晶シリコン棒および多結晶シリコン棒の製造方法
DE102010039752A1 (de) 2010-08-25 2012-03-01 Wacker Chemie Ag Polykristallines Silicium und Verfahren zu dessen Herstellung
DE102010040093A1 (de) * 2010-09-01 2012-03-01 Wacker Chemie Ag Verfahren zur Herstellung von polykristallinem Silicium
DE102010043702A1 (de) * 2010-11-10 2012-05-10 Wacker Chemie Ag Verfahren zur Bestimmung von Verunreinigungen in Silicium
CN102515166A (zh) * 2011-12-20 2012-06-27 国电宁夏太阳能有限公司 一种多晶硅棒的制备方法
DE102012200994A1 (de) * 2012-01-24 2013-07-25 Wacker Chemie Ag Verfahren zur Bestimmung einer Oberflächen-Verunreinigung von polykristallinem Silicium

Also Published As

Publication number Publication date
US10400329B2 (en) 2019-09-03
DE102013207251A1 (de) 2014-10-23
KR20150141191A (ko) 2015-12-17
TW201441151A (zh) 2014-11-01
ES2677489T3 (es) 2018-08-02
CN110092383A (zh) 2019-08-06
SA515370027B1 (ar) 2018-07-18
KR101801757B1 (ko) 2017-11-27
JP6567501B2 (ja) 2019-08-28
EP2989052A1 (de) 2016-03-02
EP2989052B1 (de) 2018-05-30
US20160068949A1 (en) 2016-03-10
CN105339302A (zh) 2016-02-17
WO2014173596A1 (de) 2014-10-30
TWI516446B (zh) 2016-01-11
JP2016516666A (ja) 2016-06-09

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