JP2016516666A5 - - Google Patents

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JP2016516666A5
JP2016516666A5 JP2016509348A JP2016509348A JP2016516666A5 JP 2016516666 A5 JP2016516666 A5 JP 2016516666A5 JP 2016509348 A JP2016509348 A JP 2016509348A JP 2016509348 A JP2016509348 A JP 2016509348A JP 2016516666 A5 JP2016516666 A5 JP 2016516666A5
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rod
whole
entire
polycrystalline silicon
parts
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JP2016509348A
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Japanese (ja)
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JP6567501B2 (ja
JP2016516666A (ja
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Priority claimed from DE201310207251 external-priority patent/DE102013207251A1/de
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JP2016509348A 2013-04-22 2014-03-24 多結晶質シリコンの製造方法 Active JP6567501B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE201310207251 DE102013207251A1 (de) 2013-04-22 2013-04-22 Verfahren zur Herstellung von polykristallinem Silicium
DE102013207251.1 2013-04-22
PCT/EP2014/055837 WO2014173596A1 (de) 2013-04-22 2014-03-24 Verfahren zur herstellung von polykristallinem silicium

Publications (3)

Publication Number Publication Date
JP2016516666A JP2016516666A (ja) 2016-06-09
JP2016516666A5 true JP2016516666A5 (cg-RX-API-DMAC7.html) 2019-02-14
JP6567501B2 JP6567501B2 (ja) 2019-08-28

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JP2016509348A Active JP6567501B2 (ja) 2013-04-22 2014-03-24 多結晶質シリコンの製造方法

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US (1) US10400329B2 (cg-RX-API-DMAC7.html)
EP (1) EP2989052B1 (cg-RX-API-DMAC7.html)
JP (1) JP6567501B2 (cg-RX-API-DMAC7.html)
KR (1) KR101801757B1 (cg-RX-API-DMAC7.html)
CN (2) CN110092383A (cg-RX-API-DMAC7.html)
DE (1) DE102013207251A1 (cg-RX-API-DMAC7.html)
ES (1) ES2677489T3 (cg-RX-API-DMAC7.html)
MY (1) MY178822A (cg-RX-API-DMAC7.html)
SA (1) SA515370027B1 (cg-RX-API-DMAC7.html)
TW (1) TWI516446B (cg-RX-API-DMAC7.html)
WO (1) WO2014173596A1 (cg-RX-API-DMAC7.html)

Families Citing this family (10)

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Publication number Priority date Publication date Assignee Title
WO2020234401A1 (de) 2019-05-21 2020-11-26 Wacker Chemie Ag Verfahren zur herstellung von polykristallinem silicium
US12180078B2 (en) 2019-05-21 2024-12-31 Wacker Chemie Ag Process for producing polycrystalline silicon
KR102761414B1 (ko) 2019-06-11 2025-01-31 와커 헤미 아게 다결정 실리콘의 제조 방법
KR102711635B1 (ko) * 2019-08-29 2024-09-30 와커 헤미 아게 실리콘 조각의 제조 방법
CN110967466B (zh) * 2019-11-13 2022-05-17 鞍钢集团矿业有限公司 采场空区稳定性的评价方法
CN113727944A (zh) 2019-12-17 2021-11-30 瓦克化学股份公司 生产和分类多晶硅的方法
CN111545327B (zh) * 2020-05-19 2021-09-17 铜仁职业技术学院 一种矿石加工装置
CN115591643B (zh) * 2022-10-21 2025-05-09 新特能源股份有限公司 一种硅棒的料性识别和区分方法、控制装置、控制系统、电子设备及存储介质
CN120584087A (zh) 2023-02-14 2025-09-02 株式会社德山 多晶硅中微粉的产生容易度的推定方法、推定装置、多晶硅的制造方法、已学习模型的生成装置以及生成方法
CN117103478B (zh) * 2023-08-24 2025-12-30 西安奕斯伟材料科技股份有限公司 一种用于对不合格晶棒节段进行破碎的系统及方法

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JPH1015422A (ja) * 1996-07-03 1998-01-20 Sumitomo Sitix Corp 多結晶シリコンの破砕方法
DE19741465A1 (de) 1997-09-19 1999-03-25 Wacker Chemie Gmbh Polykristallines Silicium
DE10019601B4 (de) 2000-04-20 2006-09-14 Wacker Chemie Ag Verfahren zur Herstellung eines polykristallinen Siliciumstabes
JP2006206387A (ja) * 2005-01-28 2006-08-10 Mitsubishi Materials Corp 多結晶シリコン還元炉及び多結晶シリコンロッド
DE102005019873B4 (de) 2005-04-28 2017-05-18 Wacker Chemie Ag Vorrichtung und Verfahren zum maschinellen Zerkleinern von Halbleitermaterialien
DE102006016323A1 (de) 2006-04-06 2007-10-11 Wacker Chemie Ag Verfahren und Vorrichtung zum Zerkleinern und Sortieren von Polysilicium
DE102006016324A1 (de) * 2006-04-06 2007-10-25 Wacker Chemie Ag Vorrichtung und Verfahren zum flexiblen Klassieren von polykristallinen Silicium-Bruchstücken
KR100768148B1 (ko) * 2006-05-22 2007-10-17 한국화학연구원 금속 코어수단을 이용한 다결정 실리콘 봉의 제조방법
DE102006040486A1 (de) * 2006-08-30 2008-03-13 Wacker Chemie Ag Verfahren zur zerstörungsfreien Materialprüfung von hochreinem polykristallinen Silicium
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EP2036856B1 (en) * 2007-09-04 2018-09-12 Mitsubishi Materials Corporation Clean bench and method of producing raw material for single crystal silicon
KR101811872B1 (ko) * 2007-09-20 2017-12-22 미츠비시 마테리알 가부시키가이샤 다결정 실리콘 반응로 및 다결정 실리콘의 제조 방법
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JP5751748B2 (ja) 2009-09-16 2015-07-22 信越化学工業株式会社 多結晶シリコン塊群および多結晶シリコン塊群の製造方法
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DE102010039752A1 (de) 2010-08-25 2012-03-01 Wacker Chemie Ag Polykristallines Silicium und Verfahren zu dessen Herstellung
DE102010040093A1 (de) * 2010-09-01 2012-03-01 Wacker Chemie Ag Verfahren zur Herstellung von polykristallinem Silicium
DE102010043702A1 (de) * 2010-11-10 2012-05-10 Wacker Chemie Ag Verfahren zur Bestimmung von Verunreinigungen in Silicium
CN102515166A (zh) * 2011-12-20 2012-06-27 国电宁夏太阳能有限公司 一种多晶硅棒的制备方法
DE102012200994A1 (de) * 2012-01-24 2013-07-25 Wacker Chemie Ag Verfahren zur Bestimmung einer Oberflächen-Verunreinigung von polykristallinem Silicium

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