JP6548365B2 - 面発光レーザ及び光干渉断層計 - Google Patents

面発光レーザ及び光干渉断層計 Download PDF

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Publication number
JP6548365B2
JP6548365B2 JP2014142912A JP2014142912A JP6548365B2 JP 6548365 B2 JP6548365 B2 JP 6548365B2 JP 2014142912 A JP2014142912 A JP 2014142912A JP 2014142912 A JP2014142912 A JP 2014142912A JP 6548365 B2 JP6548365 B2 JP 6548365B2
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semiconductor
light
resonator
emitting laser
semiconductor resonator
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JP2014142912A
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Japanese (ja)
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JP2016018971A (ja
JP2016018971A5 (enExample
Inventor
靖浩 長友
靖浩 長友
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Canon Inc
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Canon Inc
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Priority to JP2014142912A priority Critical patent/JP6548365B2/ja
Priority to US14/790,118 priority patent/US9379520B2/en
Priority to CN201510393621.5A priority patent/CN105305228B/zh
Priority to EP15176035.2A priority patent/EP2966738A1/en
Publication of JP2016018971A publication Critical patent/JP2016018971A/ja
Publication of JP2016018971A5 publication Critical patent/JP2016018971A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
    • H01S5/18366—Membrane DBR, i.e. a movable DBR on top of the VCSEL
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B5/00—Measuring for diagnostic purposes; Identification of persons
    • A61B5/0059—Measuring for diagnostic purposes; Identification of persons using light, e.g. diagnosis by transillumination, diascopy, fluorescence
    • A61B5/0062—Arrangements for scanning
    • A61B5/0066—Optical coherence imaging
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02001—Interferometers characterised by controlling or generating intrinsic radiation properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/0209—Low-coherence interferometers
    • G01B9/02091—Tomographic interferometers, e.g. based on optical coherence
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1039—Details on the cavity length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/1833—Position of the structure with more than one structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/1833—Position of the structure with more than one structure
    • H01S5/18333—Position of the structure with more than one structure only above the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • General Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Biomedical Technology (AREA)
  • Heart & Thoracic Surgery (AREA)
  • Medical Informatics (AREA)
  • Molecular Biology (AREA)
  • Surgery (AREA)
  • Animal Behavior & Ethology (AREA)
  • Biophysics (AREA)
  • Public Health (AREA)
  • Veterinary Medicine (AREA)
  • Semiconductor Lasers (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
JP2014142912A 2014-07-11 2014-07-11 面発光レーザ及び光干渉断層計 Expired - Fee Related JP6548365B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014142912A JP6548365B2 (ja) 2014-07-11 2014-07-11 面発光レーザ及び光干渉断層計
US14/790,118 US9379520B2 (en) 2014-07-11 2015-07-02 Surface emitting laser and optical coherence tomography apparatus
CN201510393621.5A CN105305228B (zh) 2014-07-11 2015-07-07 表面发射激光器和光学干涉层析成像装置
EP15176035.2A EP2966738A1 (en) 2014-07-11 2015-07-09 Surface emitting laser and optical coherence tomography apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014142912A JP6548365B2 (ja) 2014-07-11 2014-07-11 面発光レーザ及び光干渉断層計

Publications (3)

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JP2016018971A JP2016018971A (ja) 2016-02-01
JP2016018971A5 JP2016018971A5 (enExample) 2017-08-24
JP6548365B2 true JP6548365B2 (ja) 2019-07-24

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US (1) US9379520B2 (enExample)
EP (1) EP2966738A1 (enExample)
JP (1) JP6548365B2 (enExample)
CN (1) CN105305228B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016138871A1 (en) * 2015-03-05 2016-09-09 Harbin Institute Of Technology Method and equipment for dimensional measurement of a micro part based on fiber laser with multi-core fbg probe
JP2018526630A (ja) * 2015-09-09 2018-09-13 ダリアン ティアンダオ マリーン テクノロジー カンパニー リミテッドＤａｌｉａｎ Ｔｉａｎｄａｏ Ｍａｒｉｎｅ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．，Ｌｔｄ． 境界波を通過する反射率の計算方法
KR102384230B1 (ko) 2017-10-12 2022-04-07 삼성전자주식회사 가변 레이저 소자
TWI733579B (zh) * 2019-09-09 2021-07-11 全新光電科技股份有限公司 垂直共振腔表面放射雷射二極體（vcsel）的量測方法及磊晶片測試治具
CN113013727B (zh) * 2021-03-01 2022-08-23 中国计量大学 一种基于可调谐振腔的量子点单光子源

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Publication number Priority date Publication date Assignee Title
US5771253A (en) * 1995-10-13 1998-06-23 The Board Of Trustees Of The Leland Stanford Junior University High performance micromechanical tunable verticle cavity surface emitting laser
FR2805902B1 (fr) * 2000-03-03 2002-05-10 Centre Nat Rech Scient Dispositif optoelectronique semiconducteur a fonction de transfert modulable electriquement
US6549687B1 (en) 2001-10-26 2003-04-15 Lake Shore Cryotronics, Inc. System and method for measuring physical, chemical and biological stimuli using vertical cavity surface emitting lasers with integrated tuner
US7457033B2 (en) * 2005-05-27 2008-11-25 The Regents Of The University Of California MEMS tunable vertical-cavity semiconductor optical amplifier
JP4898263B2 (ja) * 2006-04-07 2012-03-14 サンテック株式会社 光干渉断層画像表示システム
US7701588B2 (en) * 2006-04-11 2010-04-20 Santec Corporation Swept source type optical coherent tomography system
JP4968959B2 (ja) 2008-03-06 2012-07-04 キヤノン株式会社 フォトニック結晶および該フォトニック結晶を用いた面発光レーザ
US8309929B2 (en) * 2008-03-18 2012-11-13 Lawrence Livermore National Security, Llc. Tunable photonic cavities for in-situ spectroscopic trace gas detection
JP5388666B2 (ja) 2008-04-21 2014-01-15 キヤノン株式会社 面発光レーザ
JP5984693B2 (ja) * 2012-01-31 2016-09-06 キヤノン株式会社 光干渉断層撮像装置及び光干渉断層撮像方法
JP2014060384A (ja) 2012-08-23 2014-04-03 Canon Inc 面発光レーザー、光源装置、光源装置の駆動方法及び光干渉断層撮像装置
US20140176958A1 (en) * 2012-12-21 2014-06-26 Axsun Technologies, Inc. OCT System with Bonded MEMS Tunable Mirror VCSEL Swept Source

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Publication number Publication date
JP2016018971A (ja) 2016-02-01
US20160013618A1 (en) 2016-01-14
CN105305228B (zh) 2019-12-06
EP2966738A1 (en) 2016-01-13
CN105305228A (zh) 2016-02-03
US9379520B2 (en) 2016-06-28

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