JP6531040B2 - メモリファーストプロセスフロー及び装置 - Google Patents

メモリファーストプロセスフロー及び装置 Download PDF

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Publication number
JP6531040B2
JP6531040B2 JP2015547497A JP2015547497A JP6531040B2 JP 6531040 B2 JP6531040 B2 JP 6531040B2 JP 2015547497 A JP2015547497 A JP 2015547497A JP 2015547497 A JP2015547497 A JP 2015547497A JP 6531040 B2 JP6531040 B2 JP 6531040B2
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Japan
Prior art keywords
gate
dielectric
memory
semiconductor device
disposed
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Japanese (ja)
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JP2015537395A (ja
JP2015537395A5 (enExample
Inventor
ファン，シェンチン
チェン，チュン
キム，ウンスーン
ラムスベイ，マーク
チャン，クオ，トゥン
ハダド，サメール
パック，ジェームズ
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Cypress Semiconductor Corp
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Cypress Semiconductor Corp
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Publication of JP2015537395A5 publication Critical patent/JP2015537395A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/696—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes having at least one additional gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators

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  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP2015547497A 2012-12-14 2013-12-11 メモリファーストプロセスフロー及び装置 Active JP6531040B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/715,577 US9368606B2 (en) 2012-12-14 2012-12-14 Memory first process flow and device
US13/715,577 2012-12-14
PCT/US2013/074390 WO2014093490A1 (en) 2012-12-14 2013-12-11 Memory first process flow and device

Publications (3)

Publication Number Publication Date
JP2015537395A JP2015537395A (ja) 2015-12-24
JP2015537395A5 JP2015537395A5 (enExample) 2017-01-26
JP6531040B2 true JP6531040B2 (ja) 2019-06-12

Family

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Family Applications (1)

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JP2015547497A Active JP6531040B2 (ja) 2012-12-14 2013-12-11 メモリファーストプロセスフロー及び装置

Country Status (4)

Country Link
US (2) US9368606B2 (enExample)
JP (1) JP6531040B2 (enExample)
DE (1) DE112013005968B4 (enExample)
WO (1) WO2014093490A1 (enExample)

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US10014380B2 (en) 2012-12-14 2018-07-03 Cypress Semiconductor Corporation Memory first process flow and device
US20140210012A1 (en) * 2013-01-31 2014-07-31 Spansion Llc Manufacturing of FET Devices Having Lightly Doped Drain and Source Regions
US9368644B2 (en) * 2013-12-20 2016-06-14 Cypress Semiconductor Corporation Gate formation memory by planarization
US10192747B2 (en) 2014-01-07 2019-01-29 Cypress Semiconductor Corporation Multi-layer inter-gate dielectric structure and method of manufacturing thereof
US9269829B2 (en) 2014-06-27 2016-02-23 Taiwan Semiconductor Manufacturing Co., Ltd. Split gate flash memory structure with a damage free select gate and a method of making the split gate flash memory structure
US9589805B2 (en) 2014-08-04 2017-03-07 Cypress Semiconductor Corporation Split-gate semiconductor device with L-shaped gate
US10535670B2 (en) * 2016-02-25 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Non-volatile memory having an erase gate formed between two floating gates with two word lines formed on other sides and a method for forming the same
CN107799528B (zh) * 2016-08-30 2020-07-17 华邦电子股份有限公司 存储元件的制造方法
US10242996B2 (en) * 2017-07-19 2019-03-26 Cypress Semiconductor Corporation Method of forming high-voltage transistor with thin gate poly
US11069693B2 (en) * 2018-08-28 2021-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Method for improving control gate uniformity during manufacture of processors with embedded flash memory
DE102019122590A1 (de) 2018-08-28 2020-03-05 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren zum verbessern der steuergate-gleichmässigkeit während der herstellung von prozessoren mit eingebettetem flash-speicher
US11638378B2 (en) * 2021-05-11 2023-04-25 Winbond Electronics Corp. Method of fabricating semicondoctor device

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Also Published As

Publication number Publication date
US9917166B2 (en) 2018-03-13
WO2014093490A1 (en) 2014-06-19
US20140167140A1 (en) 2014-06-19
JP2015537395A (ja) 2015-12-24
US20160293720A1 (en) 2016-10-06
DE112013005968T5 (de) 2015-10-22
DE112013005968B4 (de) 2025-07-31
US9368606B2 (en) 2016-06-14

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