JP2015537395A5 - - Google Patents
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- JP2015537395A5 JP2015537395A5 JP2015547497A JP2015547497A JP2015537395A5 JP 2015537395 A5 JP2015537395 A5 JP 2015537395A5 JP 2015547497 A JP2015547497 A JP 2015547497A JP 2015547497 A JP2015547497 A JP 2015547497A JP 2015537395 A5 JP2015537395 A5 JP 2015537395A5
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- JP
- Japan
- Prior art keywords
- gate
- dielectric
- disposed
- memory
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/715,577 US9368606B2 (en) | 2012-12-14 | 2012-12-14 | Memory first process flow and device |
| US13/715,577 | 2012-12-14 | ||
| PCT/US2013/074390 WO2014093490A1 (en) | 2012-12-14 | 2013-12-11 | Memory first process flow and device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015537395A JP2015537395A (ja) | 2015-12-24 |
| JP2015537395A5 true JP2015537395A5 (enExample) | 2017-01-26 |
| JP6531040B2 JP6531040B2 (ja) | 2019-06-12 |
Family
ID=50929931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015547497A Active JP6531040B2 (ja) | 2012-12-14 | 2013-12-11 | メモリファーストプロセスフロー及び装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US9368606B2 (enExample) |
| JP (1) | JP6531040B2 (enExample) |
| DE (1) | DE112013005968B4 (enExample) |
| WO (1) | WO2014093490A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9368606B2 (en) | 2012-12-14 | 2016-06-14 | Cypress Semiconductor Corporation | Memory first process flow and device |
| US10014380B2 (en) | 2012-12-14 | 2018-07-03 | Cypress Semiconductor Corporation | Memory first process flow and device |
| US20140210012A1 (en) * | 2013-01-31 | 2014-07-31 | Spansion Llc | Manufacturing of FET Devices Having Lightly Doped Drain and Source Regions |
| US9368644B2 (en) * | 2013-12-20 | 2016-06-14 | Cypress Semiconductor Corporation | Gate formation memory by planarization |
| US10192747B2 (en) | 2014-01-07 | 2019-01-29 | Cypress Semiconductor Corporation | Multi-layer inter-gate dielectric structure and method of manufacturing thereof |
| US9269829B2 (en) | 2014-06-27 | 2016-02-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Split gate flash memory structure with a damage free select gate and a method of making the split gate flash memory structure |
| US9589805B2 (en) | 2014-08-04 | 2017-03-07 | Cypress Semiconductor Corporation | Split-gate semiconductor device with L-shaped gate |
| US10535670B2 (en) * | 2016-02-25 | 2020-01-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Non-volatile memory having an erase gate formed between two floating gates with two word lines formed on other sides and a method for forming the same |
| CN107799528B (zh) * | 2016-08-30 | 2020-07-17 | 华邦电子股份有限公司 | 存储元件的制造方法 |
| US10242996B2 (en) * | 2017-07-19 | 2019-03-26 | Cypress Semiconductor Corporation | Method of forming high-voltage transistor with thin gate poly |
| US11069693B2 (en) * | 2018-08-28 | 2021-07-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for improving control gate uniformity during manufacture of processors with embedded flash memory |
| DE102019122590A1 (de) | 2018-08-28 | 2020-03-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Verfahren zum verbessern der steuergate-gleichmässigkeit während der herstellung von prozessoren mit eingebettetem flash-speicher |
| US11638378B2 (en) * | 2021-05-11 | 2023-04-25 | Winbond Electronics Corp. | Method of fabricating semicondoctor device |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5824584A (en) | 1997-06-16 | 1998-10-20 | Motorola, Inc. | Method of making and accessing split gate memory device |
| US5969383A (en) | 1997-06-16 | 1999-10-19 | Motorola, Inc. | Split-gate memory device and method for accessing the same |
| WO2001067517A1 (en) | 2000-03-08 | 2001-09-13 | Koninklijke Philips Electronics N.V. | Semiconductor device and method of manufacturing the same. |
| TW546840B (en) | 2001-07-27 | 2003-08-11 | Hitachi Ltd | Non-volatile semiconductor memory device |
| JP2004095889A (ja) * | 2002-08-30 | 2004-03-25 | Fasl Japan Ltd | 半導体記憶装置及びその製造方法 |
| JP4601287B2 (ja) | 2002-12-26 | 2010-12-22 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
| JP4746835B2 (ja) | 2003-10-20 | 2011-08-10 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
| JP4546117B2 (ja) | 2004-03-10 | 2010-09-15 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
| JP4601316B2 (ja) * | 2004-03-31 | 2010-12-22 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
| JP5007017B2 (ja) | 2004-06-30 | 2012-08-22 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2006041354A (ja) | 2004-07-29 | 2006-02-09 | Renesas Technology Corp | 半導体装置及びその製造方法 |
| JP5116987B2 (ja) | 2005-05-23 | 2013-01-09 | ルネサスエレクトロニクス株式会社 | 集積半導体不揮発性記憶装置 |
| JP4659527B2 (ja) | 2005-06-20 | 2011-03-30 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2007194511A (ja) | 2006-01-23 | 2007-08-02 | Renesas Technology Corp | 不揮発性半導体記憶装置およびその製造方法 |
| US7394702B2 (en) * | 2006-04-05 | 2008-07-01 | Spansion Llc | Methods for erasing and programming memory devices |
| US7915123B1 (en) * | 2006-04-20 | 2011-03-29 | Spansion Llc | Dual charge storage node memory device and methods for fabricating such device |
| JP5137453B2 (ja) * | 2006-04-28 | 2013-02-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4928825B2 (ja) | 2006-05-10 | 2012-05-09 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP5142494B2 (ja) * | 2006-08-03 | 2013-02-13 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US7579243B2 (en) * | 2006-09-26 | 2009-08-25 | Freescale Semiconductor, Inc. | Split gate memory cell method |
| US7811886B2 (en) * | 2007-02-06 | 2010-10-12 | Freescale Semiconductor, Inc. | Split-gate thin film storage NVM cell with reduced load-up/trap-up effects |
| US7795091B2 (en) | 2008-04-30 | 2010-09-14 | Winstead Brian A | Method of forming a split gate memory device and apparatus |
| US7902022B2 (en) | 2008-07-29 | 2011-03-08 | Freescale Semiconductor, Inc. | Self-aligned in-laid split gate memory and method of making |
| US8173505B2 (en) * | 2008-10-20 | 2012-05-08 | Freescale Semiconductor, Inc. | Method of making a split gate memory cell |
| KR101038873B1 (ko) * | 2008-11-06 | 2011-06-02 | 주식회사 동부하이텍 | 플래시 메모리 소자의 제조 방법 |
| KR100936627B1 (ko) | 2008-12-24 | 2010-01-13 | 주식회사 동부하이텍 | 플래시 메모리 소자 및 이의 제조 방법 |
| JP5519154B2 (ja) * | 2009-01-09 | 2014-06-11 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US8298902B2 (en) | 2009-03-18 | 2012-10-30 | International Business Machines Corporation | Interconnect structures, methods for fabricating interconnect structures, and design structures for a radiofrequency integrated circuit |
| KR20110075952A (ko) | 2009-12-29 | 2011-07-06 | 주식회사 동부하이텍 | 플래시 메모리 소자의 제조방법 |
| JP2011181124A (ja) | 2010-02-26 | 2011-09-15 | Renesas Electronics Corp | 不揮発性半導体記憶装置および不揮発性半導体記憶装置の動作方法 |
| JP2011199084A (ja) * | 2010-03-23 | 2011-10-06 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
| JP2011210969A (ja) * | 2010-03-30 | 2011-10-20 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
| JP5592214B2 (ja) * | 2010-09-22 | 2014-09-17 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2011040782A (ja) | 2010-10-18 | 2011-02-24 | Renesas Electronics Corp | 半導体装置の製造方法 |
| US8698118B2 (en) * | 2012-02-29 | 2014-04-15 | Globalfoundries Singapore Pte Ltd | Compact RRAM device and methods of making same |
| US9368606B2 (en) | 2012-12-14 | 2016-06-14 | Cypress Semiconductor Corporation | Memory first process flow and device |
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2012
- 2012-12-14 US US13/715,577 patent/US9368606B2/en active Active
-
2013
- 2013-12-11 WO PCT/US2013/074390 patent/WO2014093490A1/en not_active Ceased
- 2013-12-11 DE DE112013005968.1T patent/DE112013005968B4/de active Active
- 2013-12-11 JP JP2015547497A patent/JP6531040B2/ja active Active
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2016
- 2016-06-13 US US15/181,138 patent/US9917166B2/en active Active