JP5137453B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP5137453B2 JP5137453B2 JP2007112835A JP2007112835A JP5137453B2 JP 5137453 B2 JP5137453 B2 JP 5137453B2 JP 2007112835 A JP2007112835 A JP 2007112835A JP 2007112835 A JP2007112835 A JP 2007112835A JP 5137453 B2 JP5137453 B2 JP 5137453B2
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- 150000005309 metal halides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
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Description
本実施形態では、本発明の記憶素子を有する半導体装置として、記憶装置について説明する。
なお、図11に示した記憶装置の構成はあくまで一例である。例えば、読み出し回路は、ビット線駆動回路13に含まれていてもよい。記憶装置は、入力用バッファ、出力用バッファ、入力用レジスタ、出力用レジスタを有してもよい。ワード線駆動回路12およびビット線駆動回路13を制御することにより、メモリセルアレイ11の任意の記憶素子MEにデータを書き込み、また、書き込んだデータが読み出される。
図14は、本実施形態の記憶装置の一部を示したものである。図14の図示の方法は図1と同様である。図14(A)に記憶装置一部断面図を示し、図14(B)にメモリセルMCの上面図を示し、図14(C)にメモリセルMCの等価回路図を示している。本実施形態では、実施形態1の第2導電膜46、47を、第1導電膜76、第2導電膜77に変更している。その他の点は実施形態1と同様である。なお、図14(A)及び図14(B)と同様に、各図15(A)〜図21(A)には、記憶装置の一部の断面を示し、各図15(B)〜図21(B)には、メモリセルMCの上面図を示す。なお、図14(A)には、図14(B)の鎖線x−x’による断面図を図示する。だだし、記憶素子MEの断面構造及びダイオードDIと記憶素子MEとの電気的な接続を説明する都合、図14(A)のメモリセルMCの断面図には、第1導電膜76、第2導電膜77等の図14(B)の鎖線x−x’上に存在しない部分も図示している。この点は図15(A)〜図21(A)も図14(A)と同様である。
本実施の形態では、実施形態1、2に示した記憶装置へのデータの書き込みおよびデータを読み込み方法について説明する。
メモリセルMCのデータを読み出す場合は、ワード線駆動回路12により行が選択される。一方、ビット線駆動回路13において、セレクタにより列が選択され、選択された列のビット線が読み出し回路に接続される。記憶素子MEにダイオードを直列に接続しているため、任意の記憶素子MEを選択し、その記憶素子MEからデータを読み出すことが可能になる。そして、選択された列のビット線に流れる電流値から、メモリセルMCに流れる電流の値を検出することで、メモリセルMCに書き込まれたデータが「0」か「1」かを判断することができる。
実施形態1および2のようにメモリセルMCにダイオードを設けることで、高集積化を実現することができる。本実施形態では、TFTを設けたメモリセルと本発明のダイオードを設けたメモリセルの大きさを比較することで、本発明により、記憶装置の高集積化が実現できることを説明する。
W ワード線
MC メモリセル
MD 記憶素子
DI ダイオード
R1〜R1、R11〜R14、R31〜R35 レジスト
10 基板
11 メモリセルアレイ
12 ビット線駆動回路
13 ワード線駆動回路
21 導電層
22 導電層
23 有機化合物層
31 下地膜
32 半導体膜
32n n型不純物領域
32p p型不純物領域
33 半導体膜
33a、33b p型高濃度不純物領域
33c チャネル形成領域
34 半導体膜
34a、34b n型高濃度不純物領域
34c チャネル形成領域
35 絶縁膜
37、38 第1導電膜
39 第1層間絶縁膜
40、41 コンタクトホール
46〜51 第2導電膜
53 第2層間絶縁膜
54 コンタクトホール
55 第3導電膜
56 第3層間絶縁膜
57 開口部
58 有機化合物層
59 第4導電膜
61 n型不純物領域
71 n型不純物領域
76 導電膜
77 導電膜
81 導電膜
82 導電膜
83 導電膜
84 コンタクトホール
86 コンタクトホール
88 導電膜
89 コンタクトホール
93 導電膜
200 半導体装置
210 アンテナ
212 共振回路
213 電源回路
214 リセット回路
215 クロック発生回路
216 データ復調回路
217 データ変調回路
220 制御回路
221 コード抽出回路
222 コード判定回路
223 CRC判定回路
224 出力ユニット回路
230 メモリ部
240 集積回路部
249 下地絶縁層
249a 第1層
249b 第2層
250 素子形成層
251 可撓性基板
252 可撓性基板
253 保護絶縁層
255、256 接着材
260 基板
261 剥離層
261a 第1層
261b 第2層
261c 第3層
271 結晶性シリコン膜
272半導体層
272n n型不純物領域
272p p型不純物領域
273半導体層
273a、273b p型高濃度不純物領域
273c チャネル形成領域
274半導体層
274a、274b n型高濃度不純物領域
274c チャネル形成領域
274e、274d n型低濃度不純物領域
275半導体層
275a、275b n型高濃度不純物領域
275c チャネル形成領域
275e、275d n型低濃度不純物領域
276半導体層
276a、276b n型高濃度不純物領域
276c n型不純物領域
277 絶縁膜
278、279 n型不純物領域
281 導電膜
283〜286 第1導電膜
288〜291 n型低濃度不純物領域
293〜296 絶縁層
298 キャップ絶縁膜
299、300 第1層間絶縁膜
301〜314 第2導電膜
316 第2層間絶縁膜
317、318 コンタクトホール
319、320 第3導電膜
321 層間絶縁膜
322、323 開口部
326 導電膜
327 有機化合物層
328 第4導電膜
Claims (1)
- 第1乃至第3の半導体層を形成し、
前記第1乃至第3の半導体層上に第1の絶縁層を形成し、
前記第1の絶縁層上の前記第2の半導体層と重なる位置に第1のゲート電極を形成し、前記第1の絶縁層上の前記第3の半導体層と重なる位置に第2のゲート電極を形成し、
前記第2の半導体層の全体と第3の半導体層の全体とを覆う第1のレジストを形成し、
前記第1の半導体層の全体に第1のn型不純物を添加し、
前記第1のレジストを除去し、
前記第1の半導体層の第1の領域を覆う第2のレジストと前記第3の半導体層の全体を覆う第3のレジストを形成し、
前記第1の半導体層の第2の領域にp型不純物を添加するとともに、前記第1のゲート電極をマスクとして自己整合的に前記第2の半導体層に前記p型不純物を添加し、
前記第2及び第3のレジストを除去し、
前記第1の半導体層の全体を覆う第4のレジストと前記第2の半導体層の全体を覆う第5のレジストとを形成し、
前記第2のゲート電極をマスクとして自己整合的に前記第3の半導体層に第2のn型不純物を添加し、
前記第4及び第5のレジストを除去し、
前記第1の絶縁層及び前記第1及び第2のゲート電極を覆う第2の絶縁層を形成し、
前記第2の絶縁層に第1のコンタクトホールを形成し、
前記第2の絶縁層上に第1の配線を形成し、
前記第1の配線を覆う第3の絶縁層を形成し、
前記第3の絶縁層に第2のコンタクトホールを形成し、
前記第3の絶縁層上に第1の電極を形成し、
前記第1の電極を覆う第4の絶縁層を形成し、
前記第4の絶縁層に前記第1の電極に達する開口部を形成し、
前記開口部において露出した前記第1の電極上及び前記第4の絶縁層上に有機化合物層を形成し、
前記有機化合物層上に第2の電極を形成することを特徴とする半導体装置の作製方法。
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