JP6531040B2 - メモリファーストプロセスフロー及び装置 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
- H01L29/42344—Gate electrodes for transistors with charge trapping gate insulator with at least one additional gate, e.g. program gate, erase gate or select gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
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- Non-Volatile Memory (AREA)
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Description
Claims (22)
- 半導体装置であって、
前記半導体装置の第1の領域に配設され、電荷トラップ誘電体に重なるように配設された第1のゲート導体層を含む第1のメモリゲートと、
前記第1の領域に、前記第1のメモリゲートの側壁に隣接して配設された第1の選択ゲートと、
前記第1の領域に、前記第1の選択ゲートに隣接して配設された第2の選択ゲートであって、前記第1の選択ゲートが前記第1のメモリゲートと該第2の選択ゲートの間に配設される、該第2の選択ゲートと、
前記第1のメモリゲートの前記側壁と前記第1の選択ゲートとの間に配設された側壁誘電体と、
前記第1の選択ゲート及び前記第2の選択ゲートの下に配設された誘電体層であって、該誘電体層は、前記側壁誘電体によって、前記電荷トラップ誘電体及び前記第1のメモリゲートから分離されるように配設される、該誘電体層と、
前記半導体装置の第2の領域に配設され、第1の論理ゲート誘電体を含む第1の論理ゲートと、
前記半導体装置の第3の領域に配設され、第2の論理ゲート誘電体を含む第2の論理ゲートと、
を備え、
前記誘電体層、前記第1の論理ゲート誘電体、及び前記第2の論理ゲート誘電体は、それぞれ互いに異なる厚さを有する、
半導体装置。 - 前記第1の選択ゲートが第2のゲート導体層を備える、
請求項1の半導体装置。 - 前記誘電体層が前記電荷トラップ誘電体と重ならないように配設される、
請求項1の半導体装置。 - 前記第2の論理ゲートが前記第1のゲート導体層を備える、
請求項1の半導体装置。 - 前記電荷トラップ誘電体が1つ以上の他の電荷トラップ誘電体から電気的に絶縁されている、
請求項1の半導体装置。 - 前記電荷トラップ誘電体が窒化物層と誘電体層とを備える、
請求項1の半導体装置。 - 前記窒化物層がシリコンリッチ窒化物を備える、
請求項6の半導体装置。 - 前記第1の論理ゲートと前記第2の論理ゲートは、異なる幅を有する、
請求項1の半導体装置。 - 前記誘電体が前記電荷トラップ誘電体と不連続の窒化物層を備える、
請求項1の半導体装置。 - 前記窒化物層が前記電荷トラップ誘電体とは別個の層を備える、
請求項9の半導体装置。 - 前記第1の選択ゲート及び前記第2の選択ゲートが前記第2のゲート導体層を備える、
請求項1の半導体装置。 - 前記第2の選択ゲートに隣接して配設された第2のメモリゲートをさらに備える、
請求項1の半導体装置。 - 前記第2の選択ゲートが前記第2のメモリゲートの側壁上に配設される、
請求項12の半導体装置。 - 前記第2のメモリゲートが前記第1のゲート導体層を備える、
請求項12の半導体装置。 - 半導体装置であって、
前記半導体装置の第1の領域に配設された第1のメモリゲート、及び、該第1のメモリゲートの側壁上に配設された第1の選択ゲートを有しており、前記第1のメモリゲートが第1の電荷トラップ誘電体に重なるように配設され、側壁誘電体が前記第1のメモリゲートと前記第1の選択ゲートとの間に配設された、第1のメモリセルと、
前記半導体装置の第1の領域に配設された第2のメモリゲート及び第2の選択ゲートを有しており、前記第2の選択ゲートが前記第2のメモリゲートの側壁上に、かつ、前記第1の選択ゲートに隣接して配設され、前記第2のメモリゲートが第2の電荷トラップ誘電体に重なるように配設され、前記第1の選択ゲート及び前記第2の選択ゲートが前記第1のメモリゲートと前記第2のメモリゲートとの間に配設された、 第2のメモリセルと、
前記第1のメモリゲートと前記第2のメモリゲートとの間に、かつ、前記第1の選択ゲート及び前記第2の選択ゲートの下に配設された誘電体層であって、該誘電体層が前記第1の選択ゲート及び前記第2の選択ゲートによって共有されており、かつ、前記側壁誘電体によって該誘電体層が層内における電荷トラップ、及び、前記第1のメモリゲートから分離されている、該誘電体層と、
前記半導体装置の第2の領域に配設され、第1の論理ゲート誘電体を含む第1の論理ゲートと、
前記半導体装置の第3の領域に配設され、第2の論理ゲート誘電体を含む第2の論理ゲートと、
を備え、
前記誘電体層、前記第1の論理ゲート誘電体、及び前記第2の論理ゲート誘電体は、それぞれ互いに異なる厚さを有する、
半導体装置。 - 前記第1のメモリゲート及び前記第2のメモリゲートが第1のゲート導体層を備える、
請求項15の半導体装置。 - 前記第1の選択ゲート及び前記第2の選択ゲートが第2のゲート導体層を備える、
請求項15の半導体装置。 - 前記第1のメモリセル及び前記第2のメモリセルがメモリ領域である前記第1の領域に配設される、
請求項15の半導体装置。 - 前記第2の領域及び前記第3の領域は、論理領域を画定する、
請求項15の半導体装置。 - 前記第1の論理ゲートと前記第2の論理ゲートは、異なる幅を有する、
請求項15の半導体装置。 - 前記第1のメモリゲートと前記第1の選択ゲートとの間に配設された第1の側壁誘電体と、
前記第2のメモリゲートと前記第2の選択ゲートとの間に配設された第2の側壁誘電体と、をさらに備える、
請求項15の半導体装置。 - 前記第1の電荷トラップ誘電体及び前記第2の電荷トラップ誘電体が前記誘電体層と重なっていない、
請求項15の半導体装置。
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US13/715,577 | 2012-12-14 | ||
US13/715,577 US9368606B2 (en) | 2012-12-14 | 2012-12-14 | Memory first process flow and device |
PCT/US2013/074390 WO2014093490A1 (en) | 2012-12-14 | 2013-12-11 | Memory first process flow and device |
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JP2015537395A JP2015537395A (ja) | 2015-12-24 |
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JP (1) | JP6531040B2 (ja) |
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