JP6474349B2 - 高電圧ゲート形成 - Google Patents
高電圧ゲート形成 Download PDFInfo
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- JP6474349B2 JP6474349B2 JP2015547538A JP2015547538A JP6474349B2 JP 6474349 B2 JP6474349 B2 JP 6474349B2 JP 2015547538 A JP2015547538 A JP 2015547538A JP 2015547538 A JP2015547538 A JP 2015547538A JP 6474349 B2 JP6474349 B2 JP 6474349B2
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- 230000015654 memory Effects 0.000 claims description 108
- 239000000758 substrate Substances 0.000 claims description 83
- 238000000034 method Methods 0.000 claims description 64
- 239000004065 semiconductor Substances 0.000 claims description 47
- 238000004519 manufacturing process Methods 0.000 claims description 29
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 238000005530 etching Methods 0.000 description 18
- 230000002093 peripheral effect Effects 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
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- 238000002513 implantation Methods 0.000 description 7
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- 239000004020 conductor Substances 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
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- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 239000002019 doping agent Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
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- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42328—Gate electrodes for transistors with a floating gate with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H10B41/42—Simultaneous manufacture of periphery and memory cells
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
Description
本明細書に記載される実施形態は、概して、電荷トラップメモリ等の不揮発性メモリに関する。
フラッシュメモリ等の不揮発性メモリは、メモリへの電力がなくなる場合であっても記憶データを保持する。不揮発性メモリセルは、例えば、電荷を電気絶縁浮遊ゲート又は電界効果トランジスタ(FET)の制御ゲートの下にある電荷トラップ層に蓄えることによってデータを記憶する。記憶された電荷は、FETの閾値を制御し、それにより、セルのメモリ状態を制御する。
本明細書において識別されるか、それとも他のどこかで識別されるかに関係なく、問題のうちの少なくとも1つをなくすか、若しくは軽減し、又は既存の装置若しくは方法への代替を提供することが望ましい。本明細書に記載される実施形態は、高電圧ゲートをコンピュータメモリに形成する方法、システム、及び装置を含む。
添付図面は、本明細書に組み込まれ、本明細書の一部をなし、本発明を示し、説明と共に、本発明の原理を説明し、当業者が本発明を製作し使用できるようにする役割を更に果たす。
本明細書は、本発明の特徴を組み込む1つ又は複数の実施形態を開示する。開示される実施形態は単に、本発明を例示する。本発明の範囲は、開示される実施形態に限定されない。本発明は、本明細書に添付される特許請求の範囲によって規定される。
Claims (15)
- メモリ領域と、第1の基板領域と、第2の基板領域とを含む半導体デバイスを製造する方法であって、
第1のゲートを前記第1の基板領域に形成することと、
前記第1のゲートを形成した後に、選択ゲートを前記メモリ領域に形成することと、
前記選択ゲートを形成した後に、電荷トラップ誘電体を前記メモリ領域及び前記第2の基板領域に配置することと、
前記電荷トラップ誘電体を配置した後に、ゲート層を前記メモリ領域に配置することと、
前記ゲート層を配置した後に、メモリゲートを前記選択ゲートの側壁に形成することと、
前記メモリゲートを形成した後に、前記電荷トラップ誘電体を前記第2の基板領域から除去することと、
前記電荷トラップ誘電体を除去した後に、第2のゲートを前記第2の基板領域に形成することと、
を含む、方法。 - 前記第1のゲートを形成する前に、ハードマスクを前記第1の基板領域に配置することを更に含み、前記ハードマスクの厚さは、前記第1のゲートの厚さよりも薄い、請求項1に記載の方法。
- ハードマスクを通して、前記第1の基板領域において、前記第1のゲートに隣接してドープされたドレインを配置することを更に含む、請求項1に記載の方法。
- 前記第2のゲートを形成する前に、ハードマスクを前記第2の基板領域に配置することと、
前記電荷トラップ誘電体を前記第2の基板領域から除去した後に、前記ハードマスクを除去し、同時に、前記第2の基板領域の少なくとも一部を除去することと、
を更に含む、請求項1に記載の方法。 - 前記第1のゲートを形成する前に、ハードマスクを前記第1の基板領域、前記第2の基板領域、及び前記メモリ領域に配置することを更に含む、請求項1に記載の方法。
- 前記電荷トラップ誘電体を配置した後に、前記選択ゲートの両側壁に前記ゲート層を配置することと、
前記ゲート層を配置した後に、前記選択ゲートのいずれか一方の側壁から前記ゲート層を除去し、これにより、前記選択ゲートの他方の側壁に前記メモリゲートを形成することを更に含む、請求項1に記載の方法。 - 前記第1のゲートと同じゲート厚であるが、異なるゲート幅を有する前記第2のゲートを形成することを更に含む、請求項1に記載の方法。
- 前記第1の基板領域は高電圧基板領域であり、前記第2の基板領域は低電圧基板領域である、請求項1に記載の方法。
- メモリ領域と、第1の基板領域と、第2の基板領域とを含む半導体デバイスであって、
前記第1の基板領域における第1のゲートと、
前記第2の基板領域における第2のゲートと、
前記メモリ領域における選択ゲートと、
前記メモリ領域におけるメモリゲートであって、それぞれが対応する選択ゲートに隣接して形成される、メモリゲートと、
を含み、
前記選択ゲート、前記第1のゲート、及び前記第2のゲートは、同じゲート厚を有し、
前記第2のゲートは、前記第1のゲートと同じゲート厚であるが、異なるゲート幅を有する、
半導体デバイス。 - 前記第1の基板領域と前記第2の基板領域との間にトレンチを更に含む、請求項9に記載の半導体デバイス。
- 前記第1のゲートに隣接して、前記第1の基板領域においてドープされたドレインを更に含む、請求項9に記載の半導体デバイス。
- 前記第1の基板領域は高電圧基板領域であり、前記第2の基板領域は低電圧基板領域である、請求項9に記載の半導体デバイス。
- 前記メモリ領域は、前記メモリゲートの下及び隣のうちの少なくとも一方において電荷トラップ誘電体を含む、請求項9に記載の半導体デバイス。
- 前記メモリゲートは、酸化物層間に挟まれた窒化物層を有する、請求項9に記載の半導体デバイス。
- 部分的にエッチングされたトレンチを更に含む、請求項9に記載の半導体デバイス。
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US13/715,739 | 2012-12-14 | ||
US13/715,739 US8822289B2 (en) | 2012-12-14 | 2012-12-14 | High voltage gate formation |
PCT/US2013/074651 WO2014093611A1 (en) | 2012-12-14 | 2013-12-12 | High voltage gate formation |
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JP2016500478A JP2016500478A (ja) | 2016-01-12 |
JP6474349B2 true JP6474349B2 (ja) | 2019-02-27 |
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DE (1) | DE112013005992T5 (ja) |
WO (1) | WO2014093611A1 (ja) |
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US9368644B2 (en) * | 2013-12-20 | 2016-06-14 | Cypress Semiconductor Corporation | Gate formation memory by planarization |
US9899378B2 (en) | 2015-12-14 | 2018-02-20 | International Business Machines Corporation | Simultaneously fabricating a high voltage transistor and a finFET |
JP6629142B2 (ja) | 2016-06-03 | 2020-01-15 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
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US5969383A (en) | 1997-06-16 | 1999-10-19 | Motorola, Inc. | Split-gate memory device and method for accessing the same |
US5824584A (en) | 1997-06-16 | 1998-10-20 | Motorola, Inc. | Method of making and accessing split gate memory device |
TW420874B (en) | 1998-05-04 | 2001-02-01 | Koninkl Philips Electronics Nv | Method of manufacturing a semiconductor device |
TW546840B (en) | 2001-07-27 | 2003-08-11 | Hitachi Ltd | Non-volatile semiconductor memory device |
JP3956709B2 (ja) * | 2002-01-23 | 2007-08-08 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP4601287B2 (ja) | 2002-12-26 | 2010-12-22 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
JP4521597B2 (ja) * | 2004-02-10 | 2010-08-11 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置およびその製造方法 |
JP4546117B2 (ja) | 2004-03-10 | 2010-09-15 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
JP5007017B2 (ja) | 2004-06-30 | 2012-08-22 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2006041354A (ja) | 2004-07-29 | 2006-02-09 | Renesas Technology Corp | 半導体装置及びその製造方法 |
JP5025140B2 (ja) * | 2005-03-23 | 2012-09-12 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置の製造方法 |
KR100684899B1 (ko) | 2005-05-18 | 2007-02-20 | 삼성전자주식회사 | 비휘발성 기억 장치 |
JP5116987B2 (ja) | 2005-05-23 | 2013-01-09 | ルネサスエレクトロニクス株式会社 | 集積半導体不揮発性記憶装置 |
JP4659527B2 (ja) | 2005-06-20 | 2011-03-30 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2007194511A (ja) | 2006-01-23 | 2007-08-02 | Renesas Technology Corp | 不揮発性半導体記憶装置およびその製造方法 |
JP4928825B2 (ja) | 2006-05-10 | 2012-05-09 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP5142494B2 (ja) * | 2006-08-03 | 2013-02-13 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP5142501B2 (ja) * | 2006-08-25 | 2013-02-13 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
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JP2010040797A (ja) * | 2008-08-06 | 2010-02-18 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP2010183022A (ja) * | 2009-02-09 | 2010-08-19 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
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JP5613506B2 (ja) * | 2009-10-28 | 2014-10-22 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2011181124A (ja) | 2010-02-26 | 2011-09-15 | Renesas Electronics Corp | 不揮発性半導体記憶装置および不揮発性半導体記憶装置の動作方法 |
US8399310B2 (en) * | 2010-10-29 | 2013-03-19 | Freescale Semiconductor, Inc. | Non-volatile memory and logic circuit process integration |
-
2012
- 2012-12-14 US US13/715,739 patent/US8822289B2/en active Active
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2013
- 2013-12-12 JP JP2015547538A patent/JP6474349B2/ja active Active
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- 2013-12-12 DE DE112013005992.4T patent/DE112013005992T5/de active Pending
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US8822289B2 (en) | 2014-09-02 |
JP2016500478A (ja) | 2016-01-12 |
US20140332876A1 (en) | 2014-11-13 |
DE112013005992T5 (de) | 2015-09-10 |
US20140167137A1 (en) | 2014-06-19 |
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