JP6518725B2 - ラテラルプラズマ/ラジカル源 - Google Patents
ラテラルプラズマ/ラジカル源 Download PDFInfo
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- JP6518725B2 JP6518725B2 JP2017124677A JP2017124677A JP6518725B2 JP 6518725 B2 JP6518725 B2 JP 6518725B2 JP 2017124677 A JP2017124677 A JP 2017124677A JP 2017124677 A JP2017124677 A JP 2017124677A JP 6518725 B2 JP6518725 B2 JP 6518725B2
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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Description
また、本願は以下に記載する態様を含む。
(態様1)
ガスインレット及び前面を有するハウジング、
前記ハウジング内のRFホット電極であって、第1の表面と、前記第1の表面と反対側にあって前記RFホット電極の厚さを画定する第2の表面とを有する、RFホット電極、
前記ハウジング内の第1のリターン電極であって、前記RFホット電極の前記第1の表面から間隔を空けられて第1の間隙を形成する、第1の表面を有する、リターン電極、及び
前記ハウジング内の第2のリターン電極であって、前記RFホット電極の前記第2の表面から間隔を空けられて第2の間隙を形成する第1の表面を有し、よって前記第2の間隙が、前記RFホット電極の、前記第1の間隙と反対側に形成される、第2のリターン電極、
を備える、プラズマ源アセンブリ。
(態様2)
前記第1のリターン電極及び前記第2のリターン電極は、接地電極である、態様1に記載のプラズマ源アセンブリ。
(態様3)
前記第1のリターン電極及び前記第2のリターン電極は、電力供給される電極である、態様1に記載のプラズマ源アセンブリ。
(態様4)
前記第1の間隙と前記第2の間隙が、約4mmから約15mmまでの範囲内にある、態様1に記載のプラズマ源アセンブリ。
(態様5)
前記第1の間隙と前記第2の間隙が、前記ガスインレットに隣接するより狭い間隙から前記前面に隣接するより広い間隙へ変動する、態様1に記載のプラズマ源アセンブリ。
(態様6)
前記RFホット電極の厚さが、前記前面に隣接するところよりも前記ガスインレットに隣接するところで大きい、態様5に記載のプラズマ源アセンブリ。
(態様7)
前記RFホット電極が、約3mmから約11mmまでの範囲内にある厚さを有する、態様1に記載のプラズマ源アセンブリ。
(態様8)
前記RFホット電極が、約8mmから約40mmまでの範囲内にある高さを有する、態様1に記載のプラズマ源アセンブリ。
(態様9)
前記ハウジングが、楔型の形状を有する、態様1に記載のプラズマ源アセンブリ。
(態様10)
前記RFホット電極とリターン電極が、前記ハウジングの主要な軸に沿って延在する、態様9に記載のプラズマ源アセンブリ。
(態様11)
前記RFホット電極とリターン電極が、前記ハウジングの主要な軸と垂直に延在する、態様9に記載のプラズマ源アセンブリ。
(態様12)
前記RFホット電極が、蛇のように曲がりくねった形を有し、前記リターン電極が、前記蛇のように曲がりくねった形の長さに沿ってほぼ同じ間隙を維持するような補完的形状を有する、態様9に記載のプラズマ源アセンブリ。
(態様13)
前記RFホット電極が、前記ハウジングの主要な軸と垂直に延在する複数のフィンガを有する、態様9に記載のプラズマ源アセンブリ。
(態様14)
前記リターン電極が、前記RFホット電極と補完的形状を有し、前記RFホット電極と前記リターン電極の間でほぼ同じ間隙を維持する、態様13に記載のプラズマ源アセンブリ。
(態様15)
前記RFホット電極の下側端部に隣接するスペーサを更に備える、態様1に記載のプラズマ源アセンブリ。
Claims (14)
- ガスインレット及び前面を有するハウジング、
前記ハウジング内のRFホット電極であって、第1の表面と、前記第1の表面と反対側にあって前記RFホット電極の厚さを画定する第2の表面とを有する、RFホット電極、
前記ハウジング内の第1のリターン電極であって、前記RFホット電極の前記第1の表面から間隔を空けられて第1の間隙を形成する、第1の表面を有する、第1のリターン電極、
前記ハウジング内の第2のリターン電極であって、前記RFホット電極の前記第2の表面から間隔を空けられて第2の間隙を形成する第1の表面を有し、よって前記第2の間隙が、前記RFホット電極の、前記第1の間隙と反対側に形成される、第2のリターン電極、及び
前記RFホット電極の下側端部に隣接するスペーサと前記スペーサに隣接する第3のリターン電極とを備え、前記第3のリターン電極が前記ハウジングの前記前面にあるように配置された、
プラズマ源アセンブリ。 - 前記第1のリターン電極及び前記第2のリターン電極は、接地電極である、請求項1に記載のプラズマ源アセンブリ。
- 前記第1のリターン電極及び前記第2のリターン電極は、電力供給される電極である、請求項1に記載のプラズマ源アセンブリ。
- 前記第1の間隙と前記第2の間隙が、約4mmから約15mmまでの範囲内にある、請求項1に記載のプラズマ源アセンブリ。
- 前記第1の間隙と前記第2の間隙が、前記ガスインレットに隣接するより狭い間隙から前記前面に隣接するより広い間隙へ変動する、請求項1に記載のプラズマ源アセンブリ。
- 前記RFホット電極の厚さが、前記前面に隣接するところよりも前記ガスインレットに隣接するところで大きい、請求項5に記載のプラズマ源アセンブリ。
- 前記RFホット電極が、約3mmから約11mmまでの範囲内にある厚さを有する、請求項1に記載のプラズマ源アセンブリ。
- 前記RFホット電極が、約8mmから約40mmまでの範囲内にある高さを有する、請求項1に記載のプラズマ源アセンブリ。
- 前記ハウジングが、楔型の形状を有する、請求項1に記載のプラズマ源アセンブリ。
- 前記RFホット電極とリターン電極が、前記ハウジングの主要な軸に沿って延在する、請求項9に記載のプラズマ源アセンブリ。
- 前記RFホット電極とリターン電極が、前記ハウジングの主要な軸と垂直に延在する、請求項9に記載のプラズマ源アセンブリ。
- 前記RFホット電極が、蛇のように曲がりくねった形を有し、前記第1のリターン電極及び前記第2のリターン電極が、前記蛇のように曲がりくねった形の長さに沿ってほぼ同じ間隙を維持するような補完的形状を有する、請求項9に記載のプラズマ源アセンブリ。
- 前記RFホット電極が、前記ハウジングの主要な軸と垂直に延在する複数のフィンガを有する、請求項9に記載のプラズマ源アセンブリ。
- 前記第1のリターン電極及び前記第2のリターン電極が、前記RFホット電極と補完的形状を有し、前記RFホット電極と前記第1のリターン電極及び前記第2のリターン電極の間でほぼ同じ間隙を維持する、請求項13に記載のプラズマ源アセンブリ。
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