JP6510760B2 - 金属基板 - Google Patents
金属基板 Download PDFInfo
- Publication number
- JP6510760B2 JP6510760B2 JP2014073359A JP2014073359A JP6510760B2 JP 6510760 B2 JP6510760 B2 JP 6510760B2 JP 2014073359 A JP2014073359 A JP 2014073359A JP 2014073359 A JP2014073359 A JP 2014073359A JP 6510760 B2 JP6510760 B2 JP 6510760B2
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- JP
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- Prior art keywords
- film
- metal substrate
- metal plate
- adhesive
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000002184 metal Substances 0.000 title claims description 143
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- MYONAGGJKCJOBT-UHFFFAOYSA-N benzimidazol-2-one Chemical compound C1=CC=CC2=NC(=O)N=C21 MYONAGGJKCJOBT-UHFFFAOYSA-N 0.000 description 1
- IZJDCINIYIMFGX-UHFFFAOYSA-N benzo[f][2]benzofuran-1,3-dione Chemical compound C1=CC=C2C=C3C(=O)OC(=O)C3=CC2=C1 IZJDCINIYIMFGX-UHFFFAOYSA-N 0.000 description 1
- WZJYKHNJTSNBHV-UHFFFAOYSA-N benzoquinoline Natural products C1=CN=C2C3=CC=CC=C3C=CC2=C1 WZJYKHNJTSNBHV-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- NNBFNNNWANBMTI-UHFFFAOYSA-M brilliant green Chemical compound OS([O-])(=O)=O.C1=CC(N(CC)CC)=CC=C1C(C=1C=CC=CC=1)=C1C=CC(=[N+](CC)CC)C=C1 NNBFNNNWANBMTI-UHFFFAOYSA-M 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical group [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- 239000010960 cold rolled steel Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- IFDVQVHZEKPUSC-UHFFFAOYSA-N cyclohex-3-ene-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCC=CC1C(O)=O IFDVQVHZEKPUSC-UHFFFAOYSA-N 0.000 description 1
- QSAWQNUELGIYBC-UHFFFAOYSA-N cyclohexane-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCCCC1C(O)=O QSAWQNUELGIYBC-UHFFFAOYSA-N 0.000 description 1
- XBZSBBLNHFMTEB-UHFFFAOYSA-N cyclohexane-1,3-dicarboxylic acid Chemical compound OC(=O)C1CCCC(C(O)=O)C1 XBZSBBLNHFMTEB-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 125000005442 diisocyanate group Chemical group 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- PPSZHCXTGRHULJ-UHFFFAOYSA-N dioxazine Chemical compound O1ON=CC=C1 PPSZHCXTGRHULJ-UHFFFAOYSA-N 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 239000008397 galvanized steel Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- UCNNJGDEJXIUCC-UHFFFAOYSA-L hydroxy(oxo)iron;iron Chemical compound [Fe].O[Fe]=O.O[Fe]=O UCNNJGDEJXIUCC-UHFFFAOYSA-L 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000001989 lithium alloy Substances 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- KHARCSTZAGNHOT-UHFFFAOYSA-N naphthalene-2,3-dicarboxylic acid Chemical compound C1=CC=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 KHARCSTZAGNHOT-UHFFFAOYSA-N 0.000 description 1
- RXOHFPCZGPKIRD-UHFFFAOYSA-N naphthalene-2,6-dicarboxylic acid Chemical compound C1=C(C(O)=O)C=CC2=CC(C(=O)O)=CC=C21 RXOHFPCZGPKIRD-UHFFFAOYSA-N 0.000 description 1
- WPUMVKJOWWJPRK-UHFFFAOYSA-N naphthalene-2,7-dicarboxylic acid Chemical compound C1=CC(C(O)=O)=CC2=CC(C(=O)O)=CC=C21 WPUMVKJOWWJPRK-UHFFFAOYSA-N 0.000 description 1
- 229910001000 nickel titanium Inorganic materials 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- URLKBWYHVLBVBO-UHFFFAOYSA-N p-dimethylbenzene Natural products CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 1
- STTPRIBCABBCBE-UHFFFAOYSA-N pentanedioic acid propanedioic acid Chemical compound C(CC(=O)O)(=O)O.C(=O)(O)CCCC(=O)O STTPRIBCABBCBE-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920006289 polycarbonate film Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 229920000166 polytrimethylene carbonate Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- JEXVQSWXXUJEMA-UHFFFAOYSA-N pyrazol-3-one Chemical compound O=C1C=CN=N1 JEXVQSWXXUJEMA-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- NVKTUNLPFJHLCG-UHFFFAOYSA-N strontium chromate Chemical compound [Sr+2].[O-][Cr]([O-])(=O)=O NVKTUNLPFJHLCG-UHFFFAOYSA-N 0.000 description 1
- 229920005792 styrene-acrylic resin Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- UFDHBDMSHIXOKF-UHFFFAOYSA-N tetrahydrophthalic acid Natural products OC(=O)C1=C(C(O)=O)CCCC1 UFDHBDMSHIXOKF-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
- B32B15/09—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising polyesters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/88—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/40—Properties of the layers or laminate having particular optical properties
- B32B2307/402—Coloured
- B32B2307/4026—Coloured within the layer by addition of a colorant, e.g. pigments, dyes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/50—Properties of the layers or laminate having particular mechanical properties
- B32B2307/538—Roughness
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/12—Photovoltaic modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Laminated Bodies (AREA)
- Electroluminescent Light Sources (AREA)
- Photovoltaic Devices (AREA)
Description
本発明の金属基板に用いる金属板は、冷延鋼板、溶融純亜鉛めっき鋼板(GI)、または合金化溶融Zn−Feめっき鋼板(GA)、合金化溶融Zn−5%Alめっき鋼板(GF)、電気純亜鉛めっき鋼板(EG)、電気Zn−Niめっき鋼板、アルミニウム板、チタン板、ガルバリウム鋼板等であり、ノンクロメートのものが好ましいが、クロメート処理あるいは無処理のものも使用可能である。金属板の厚みは特に限定されないが、0.3〜2.5mm程度のものを適宜使用することができる。
本発明に用いる接着剤には、樹脂が含有されている。樹脂は特に限定されないが、ポリオレフィン樹脂、ポリエステル樹脂、ポリスチレン樹脂、ポリウレタン樹脂、などが挙げられ、ポリオレフィン樹脂又はポリエステル樹脂であることが好ましい。接着剤形成用組成物中の固形分は15〜35質量%であることが好ましく、より好ましくは20〜30質量%である。
本発明で用いられる熱可塑性樹脂フィルムとしては、特に限定はないが、ポリエステルフィルム、ポリエチレンフィルム、ポリプロピレンフィルム、ポリスチレンフィルム、ポリビニルアルコール系フィルム、ポリ塩化ビニルフィルム、ポリ塩化ビニリデンフィルム、フッ素樹脂フィルム、セルロース系フィルム、ポリカーボネートフィルム、ポリアミドフィルムなどを挙げることができる。これらの中でも好適に使用できるのは、ポリエステルフィルムであり、より好ましいのはポリエチレンテレフタレート(PET)フィルム又はポリエチレンナフタレート(PEN)フィルムであり、さらに好ましいのはPENフィルムである。ポリエステルフィルム作製に用いられるポリエステル樹脂は上述の接着剤に用いられるポリエステル樹脂の製法と同様の製法で作製することができる。
本発明の金属基板では、フィルム表面が平滑である必要がある。具体的には、金属基板に接着されたフィルム(積層後のフィルム)の表面粗さRaが30nm以下であり、好ましくは金属基板に接着されたフィルムの表面粗さRaが10nm以下である。金属基板に接着されたフィルムの表面粗さRaが30nmを超えると、フィルム表面の凹凸が原因となって、電極間のショートによる動作不良を招くおそれがある。なお、ほこりやゴミ等の粒子が付着することによって生じた表面の凹凸については、ほこりやゴミ等の粒子は30nm程度より遙かに大きいため、研磨等の平滑化によって容易に除去できる。そのため、ほこりやゴミ等の粒子による凹凸は、動作不良につながるおそれは極めて低い。金属基板に接着されたフィルムの表面粗さRaについては、後述の測定方法により測定することができる。
フィルム表面を平滑にする、具体的にはフィルム表面の表面粗さRaを30nm以下にするためには、フィルムには固体顔料が含有されていないのが好ましい。但し、着色フィルムを用いる必要がある場合は、フィルム形成用組成物中の固体顔料の体積分率を20%以下とするのが好ましい。固体顔料の粒径は通常30nmよりもかなり大きいため、フィルム形成用組成物中の固体顔料の体積分率が20%を超えると、フィルム表面の表面粗さRaを30nm以下とするのが困難になる。
耐電圧は後述の方法で測定されており、0.1kV以上が好ましい。より好ましくは0.3kV以上であり、さらに好ましくは1.0kV以上である。耐電圧が0.1kV未満であると、電極間のショートによる動作不良を招くおそれがある。
金属板上に接着剤を塗布し、その後焼付けを行い、接着剤の上にフィルムを接着することによって、本発明に係る金属基板を作製することができる。
本発明に係る金属基板を備えたサブストレート型薄膜太陽電池について説明する。サブストレート型太陽電池は、本発明に係る金属基板を備えたものであれば、公知のいずれの構造でもよく、例えば、基本的には本発明に係る金属基板のフィルム上に、裏面電極、光電変換層、透明電極がこの順で積層された構造である。光電変換層は、透明電極を通過して到達した光を吸収して電流が発生する層であり、裏面電極および透明電極は、いずれも光電変換層で発生した電流を取り出すためのものであり、いずれも導電性材料からなる。光入射側の透明電極は透光性を有する必要がある。裏面電極、光電変換層、透明電極については、公知のサブストレート型薄膜太陽電池と同様の材料を用いることができる。
本発明に係る金属基板は、トップエミッション型有機EL素子にも適用可能である。このようなトップエミッション型有機EL素子は、本発明に係る金属基板を備えたものであれば、公知のいずれの構造でもよく、例えば、基本的には本発明に係る金属基板のフィルム上に、電極、有機層、透明導電膜がこの順に積層されたものである。電極、有機層、透明導電膜については、公知のトップエミッション型薄膜太陽電池と同様の材料を用いることができる。トップエミッション型有機EL素子では、光は透明導電性膜を透過して(基板を透過することなく)取り出されるため、基板として透明でない金属板を用いることができる。
後述の作製方法で寸法50mm×50mm×0.8mmの供試材を作製した後、JIS規格C2110−1に準拠して、供試材の一方の面に外径20mmの球形電極を荷重500gfで接触させた状態で、絶縁破壊試験装置を用いて、20〜40秒程度で絶縁破壊が起こるような一定速度で厚み方向に直流電圧を印加し、絶縁破壊を生じたときの電圧を測定した。上記電圧測定を5回行い、その平均値を耐電圧とした。
後述の作製方法で得られた供試材について、原子間力顕微鏡(Atomic Force Microscope、AFM)(セイコー電子工業製SPI3800N)を用いて、供試材のフィルムが積層された側の表面について10μm×10μmのエリアの任意の3箇所の表面粗さを測定し、その平均値を平均表面粗さRaとした。
電気亜鉛めっき鋼板(板厚0.8mm)を金属板として、金属板の表面に、オレフィン樹脂を主成分とする熱可塑性接着剤(東亜合成社製アロンメルト(登録商標)PPET(登録商標)1505SG28)70質量%とメチルエチルケトン30質量%とを混合した分散液を安田精機製作所社製バーコーター番手60を用いて塗布し、到達板温(Peak Metal Temperature:PMT)が100℃となるように2分間焼付け・乾燥させ、接着剤の膜厚が5.7μmである接着剤塗装金属板1を得た。接着剤塗装金属板1の作製条件・物性等を表1に示す。
電気亜鉛めっき鋼板(板厚0.8mm)を金属板として、金属板の表面に、ポリエステル樹脂を主成分とする熱可塑性接着剤(東亜合成社製アロンメルト(登録商標)PES(登録商標)360HVXM30)90質量%とメチルエチルケトン10質量%とを混合した分散液を安田精機製作所社製バーコーター番手60を用いて塗布し、到達板温(Peak Metal Temperature:PMT)が100℃となるように2分間焼付け・乾燥させ、接着剤の膜厚が12.4μmである接着剤塗装金属板2を得た。接着剤塗装金属板2の作製条件・物性等を表1に示す。
接着剤塗装金属板2において、分散液を熱可塑性接着剤(東亜合成社製アロンメルト(登録商標)PES(登録商標)360HVXM30)50質量%とメチルエチルケトン50質量%とを混合した分散液とした点以外は、接着剤塗装金属板2と同様にして接着剤の膜厚が7.0μmである接着剤塗装金属板3を得た。接着剤塗装金属板3の作製条件・物性等を表1に示す。
接着剤塗装金属板2において、分散液を熱可塑性接着剤(東亜合成社製アロンメルト(登録商標)PES(登録商標)360HVXM30)70質量%とメチルエチルケトン30質量%とを混合した分散液とし、バーコーター番手30を用いた点以外は、接着剤塗装金属板2と同様にして接着剤の膜厚が4.9μmである接着剤塗装金属板4を得た。接着剤塗装金属板4の作製条件・物性等を表1に示す。
接着剤塗装金属板2において、分散液を熱可塑性接着剤(東亜合成社製アロンメルト(登録商標)PES(登録商標)360HVXM30)70質量%とメチルエチルケトン30質量%とを混合した分散液とし、バーコーター番手20を用いた点以外は、接着剤塗装金属板2と同様にして接着剤の膜厚が3.2μmである接着剤塗装金属板5を得た。接着剤塗装金属板5の作製条件・物性等を表1に示す。
接着剤塗装金属板2において、分散液を熱可塑性接着剤(東亜合成社製アロンメルト(登録商標)PES(登録商標)360HVXM30)70質量%とメチルエチルケトン30質量%とを混合した分散液とし、バーコーター番手10を用いた点以外は、接着剤塗装金属板2と同様にして接着剤の膜厚が1.6μmである接着剤塗装金属板6を得た。接着剤塗装金属板6の作製条件・物性等を表1に示す。
接着剤塗装金属板1の接着剤塗布面上に25μmのPETフィルム1(ユニチカ社製エンブレット(登録商標)P652:表面粗さRa20nm)を載せ、温度180℃、圧力10kgf/cm2の条件下、1分間加圧接着することにより、接着剤塗装金属板1とPETフィルムとを接着させて金属基板を得た。金属基板の作製条件、得られた金属基板の物性、評価結果を表2に示す。
実施例1において、接着剤塗装金属板1の代わりに接着剤塗装金属板2を用いたこと以外は、実施例1と同様にして金属基板を得た。金属基板の作製条件、得られた金属基板の物性、評価結果を表2に示す。
接着剤塗装金属板1の接着剤塗布面上に100μmのPENフィルム(帝人デュポンフィルム社製テオネックス(登録商標)Q65FA:表面粗さRa1.2nm)を載せ、温度180℃、圧力50kgf/cm2の条件下、1分間加圧接着することにより、接着剤塗装金属板1とPETフィルムとを接着させて金属基板を得た。金属基板の作製条件、得られた金属基板の物性、評価結果を表2に示す。
実施例3において、接着剤塗装金属板1の代わりに接着剤塗装金属板2を用いたこと以外は、実施例3と同様にして金属基板を得た。金属基板の作製条件、得られた金属基板の物性、評価結果を表2に示す。
接着剤塗装金属板3の接着剤塗布面上に100μmのPENフィルム(Q65FA)を載せ、温度100℃、圧力1kgf/cm2の条件下、1分間加圧接着することにより、接着剤塗装金属板3とPETフィルムとを接着させて金属基板を得た。得られた金属基板の物性、評価結果を表2に示す。
実施例5において、加圧接着時の温度を120℃、140℃とした点以外は、実施例5と同様にして金属基板を得た。金属基板の作製条件、得られた金属基板の物性、評価結果を表2に示す。
表2に記載のとおり、実施例5において、接着剤塗装金属板、加圧接着時の温度の少なくとも一方を変更した以外は、実施例5と同様にして金属基板を得た。金属基板の作製条件、得られた金属基板の物性、評価結果を表2に示す。
実施例4において、加圧接着時の温度を100℃、120℃、140℃とし、加圧接着時の圧力を1kgf/cm2とした点以外は、実施例4と同様にして金属基板を得た。金属基板の作製条件、得られた金属基板の物性、評価結果を表2に示す。
実施例1において、25μmのPETフィルム1に代えて50μmのPETフィルム2(ユニチカ社製E5101:表面粗さRa50nm)を用いた点以外は、実施例1と同様にして金属基板を得た。金属基板の作製条件、得られた金属基板の物性、評価結果を表2に示す。
実施例2において、25μmのPETフィルム1に代えて50μmのPETフィルム2(E5101)を用いた点以外は、実施例2と同様にして金属基板を得た。金属基板の作製条件、得られた金属基板の物性、評価結果を表2に示す。
Claims (3)
- 金属板の表面に、ポリエステル系接着剤を介して1層の熱可塑性樹脂フィルムが積層されており、
前記金属板はめっき鋼板であり、
上記フィルムは、固体顔料の体積分率が20%以下である組成物から得られたものであり、膜厚が12μm以上250μm以下、積層後の上記フィルム表面の表面粗さRaが30nm以下である
ことを特徴とするサブストレート型薄膜太陽電池又はトップエミッション型有機EL素子に用いられる金属基板。 - 上記熱可塑性樹脂は、ポリエステル樹脂である請求項1に記載の金属基板。
- 上記積層後のフィルムの表面粗さRaは10nm以下である請求項1又は2に記載の金属基板。
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WO2020137783A1 (ja) | 2018-12-28 | 2020-07-02 | Jfeスチール株式会社 | フィルムラミネート金属板、フレキシブルデバイス用基板、及び有機elデバイス用基板 |
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CN117042958A (zh) | 2021-03-23 | 2023-11-10 | 杰富意钢铁株式会社 | 膜层压金属板及其制造方法、以及柔性电子用基板及有机el用基板 |
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JP7341034B2 (ja) | 2014-07-02 | 2023-09-08 | インフレクティス・バイオサイエンス | プロテオパチーの処置のためのベンジリデングアニジン誘導体の新規な治療的使用 |
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