CN106165112A - 金属基板 - Google Patents
金属基板 Download PDFInfo
- Publication number
- CN106165112A CN106165112A CN201580016824.0A CN201580016824A CN106165112A CN 106165112 A CN106165112 A CN 106165112A CN 201580016824 A CN201580016824 A CN 201580016824A CN 106165112 A CN106165112 A CN 106165112A
- Authority
- CN
- China
- Prior art keywords
- film
- basal board
- metal basal
- bonding agent
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 121
- 239000002184 metal Substances 0.000 title claims abstract description 121
- 239000010408 film Substances 0.000 claims abstract description 76
- 239000000049 pigment Substances 0.000 claims abstract description 27
- 239000010409 thin film Substances 0.000 claims abstract description 27
- 230000003746 surface roughness Effects 0.000 claims abstract description 24
- 239000000203 mixture Substances 0.000 claims abstract description 15
- 229920005992 thermoplastic resin Polymers 0.000 claims abstract description 11
- 239000007787 solid Substances 0.000 claims abstract description 7
- 229920001225 polyester resin Polymers 0.000 claims description 12
- 239000004645 polyester resin Substances 0.000 claims description 12
- 210000000981 epithelium Anatomy 0.000 abstract description 4
- 239000007767 bonding agent Substances 0.000 description 62
- 238000000034 method Methods 0.000 description 37
- 239000010410 layer Substances 0.000 description 31
- 238000004519 manufacturing process Methods 0.000 description 30
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 21
- 239000000758 substrate Substances 0.000 description 21
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 20
- 238000000576 coating method Methods 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 13
- 239000011248 coating agent Substances 0.000 description 12
- 239000007788 liquid Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- -1 (2-ethoxy) isocyanuric acid ester Chemical class 0.000 description 11
- 238000011156 evaluation Methods 0.000 description 11
- 239000000853 adhesive Substances 0.000 description 10
- 230000001070 adhesive effect Effects 0.000 description 10
- 239000006185 dispersion Substances 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- 230000000704 physical effect Effects 0.000 description 10
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical compound OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 9
- 238000002156 mixing Methods 0.000 description 9
- 229910000831 Steel Inorganic materials 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- 239000010959 steel Substances 0.000 description 8
- 229920001169 thermoplastic Polymers 0.000 description 8
- 239000004416 thermosoftening plastic Substances 0.000 description 8
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 7
- 239000002253 acid Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 229920002799 BoPET Polymers 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000012044 organic layer Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 229920006267 polyester film Polymers 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000004040 coloring Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000002270 dispersing agent Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 150000007519 polyprotic acids Chemical class 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 150000005846 sugar alcohols Polymers 0.000 description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 238000003556 assay Methods 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- VPUGDVKSAQVFFS-UHFFFAOYSA-N coronene Chemical compound C1=C(C2=C34)C=CC3=CC=C(C=C3)C4=C4C3=CC=C(C=C3)C4=C2C3=C1 VPUGDVKSAQVFFS-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- JFCQEDHGNNZCLN-UHFFFAOYSA-N glutaric acid Chemical compound OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 229920002521 macromolecule Polymers 0.000 description 2
- 210000000713 mesentery Anatomy 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229940043265 methyl isobutyl ketone Drugs 0.000 description 2
- 150000004780 naphthols Chemical class 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- YPFDHNVEDLHUCE-UHFFFAOYSA-N propane-1,3-diol Chemical compound OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- UWRZIZXBOLBCON-VOTSOKGWSA-N (e)-2-phenylethenamine Chemical class N\C=C\C1=CC=CC=C1 UWRZIZXBOLBCON-VOTSOKGWSA-N 0.000 description 1
- BCMCBBGGLRIHSE-UHFFFAOYSA-N 1,3-benzoxazole Chemical compound C1=CC=C2OC=NC2=C1 BCMCBBGGLRIHSE-UHFFFAOYSA-N 0.000 description 1
- KLCLIOISYBHYDZ-UHFFFAOYSA-N 1,4,4-triphenylbuta-1,3-dienylbenzene Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)=CC=C(C=1C=CC=CC=1)C1=CC=CC=C1 KLCLIOISYBHYDZ-UHFFFAOYSA-N 0.000 description 1
- WURBVZBTWMNKQT-UHFFFAOYSA-N 1-(4-chlorophenoxy)-3,3-dimethyl-1-(1,2,4-triazol-1-yl)butan-2-one Chemical compound C1=NC=NN1C(C(=O)C(C)(C)C)OC1=CC=C(Cl)C=C1 WURBVZBTWMNKQT-UHFFFAOYSA-N 0.000 description 1
- QWGRWMMWNDWRQN-UHFFFAOYSA-N 2-methylpropane-1,3-diol Chemical compound OCC(C)CO QWGRWMMWNDWRQN-UHFFFAOYSA-N 0.000 description 1
- XCJMGRZQOXNTRE-UHFFFAOYSA-N 2-thiophen-2-yl-1h-pyrrole Chemical class C1=CNC(C=2SC=CC=2)=C1 XCJMGRZQOXNTRE-UHFFFAOYSA-N 0.000 description 1
- GOLORTLGFDVFDW-UHFFFAOYSA-N 3-(1h-benzimidazol-2-yl)-7-(diethylamino)chromen-2-one Chemical compound C1=CC=C2NC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 GOLORTLGFDVFDW-UHFFFAOYSA-N 0.000 description 1
- DVIVBQJVHLJFFS-UHFFFAOYSA-N 3-cyclopenta-1,3-dien-1-ylfuran-2,5-dione Chemical compound O=C1OC(=O)C(C=2CC=CC=2)=C1 DVIVBQJVHLJFFS-UHFFFAOYSA-N 0.000 description 1
- OFNISBHGPNMTMS-UHFFFAOYSA-N 3-methylideneoxolane-2,5-dione Chemical compound C=C1CC(=O)OC1=O OFNISBHGPNMTMS-UHFFFAOYSA-N 0.000 description 1
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910003373 AgInS2 Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MQIUGAXCHLFZKX-UHFFFAOYSA-N Di-n-octyl phthalate Natural products CCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCC MQIUGAXCHLFZKX-UHFFFAOYSA-N 0.000 description 1
- HECLRDQVFMWTQS-UHFFFAOYSA-N Dicyclopentadiene Chemical compound C1C2C3CC=CC3C1C=C2 HECLRDQVFMWTQS-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 239000004831 Hot glue Substances 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910000733 Li alloy Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 241000222065 Lycoperdon Species 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000574 NaK Inorganic materials 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 241000768494 Polymorphum Species 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- 229910000004 White lead Inorganic materials 0.000 description 1
- 229910000928 Yellow copper Inorganic materials 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 229910007567 Zn-Ni Inorganic materials 0.000 description 1
- 229910007614 Zn—Ni Inorganic materials 0.000 description 1
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 1
- NSIKFNOYIGGILA-UHFFFAOYSA-N [Na].[Na].[K] Chemical compound [Na].[Na].[K] NSIKFNOYIGGILA-UHFFFAOYSA-N 0.000 description 1
- HZEWFHLRYVTOIW-UHFFFAOYSA-N [Ti].[Ni] Chemical compound [Ti].[Ni] HZEWFHLRYVTOIW-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 125000002252 acyl group Chemical group 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- HXFVOUUOTHJFPX-UHFFFAOYSA-N alumane;zinc Chemical compound [AlH3].[Zn] HXFVOUUOTHJFPX-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- SMWDFEZZVXVKRB-UHFFFAOYSA-N anhydrous quinoline Natural products N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- IRERQBUNZFJFGC-UHFFFAOYSA-L azure blue Chemical compound [Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Al+3].[Al+3].[Al+3].[Al+3].[Al+3].[Al+3].[S-]S[S-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-] IRERQBUNZFJFGC-UHFFFAOYSA-L 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 150000001555 benzenes Chemical class 0.000 description 1
- MYONAGGJKCJOBT-UHFFFAOYSA-N benzimidazol-2-one Chemical compound C1=CC=CC2=NC(=O)N=C21 MYONAGGJKCJOBT-UHFFFAOYSA-N 0.000 description 1
- IZJDCINIYIMFGX-UHFFFAOYSA-N benzo[f][2]benzofuran-1,3-dione Chemical compound C1=CC=C2C=C3C(=O)OC(=O)C3=CC2=C1 IZJDCINIYIMFGX-UHFFFAOYSA-N 0.000 description 1
- WZJYKHNJTSNBHV-UHFFFAOYSA-N benzoquinoline Natural products C1=CN=C2C3=CC=CC=C3C=CC2=C1 WZJYKHNJTSNBHV-UHFFFAOYSA-N 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 125000006267 biphenyl group Chemical group 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 229940106691 bisphenol a Drugs 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- NNBFNNNWANBMTI-UHFFFAOYSA-M brilliant green Chemical compound OS([O-])(=O)=O.C1=CC(N(CC)CC)=CC=C1C(C=1C=CC=CC=1)=C1C=CC(=[N+](CC)CC)C=C1 NNBFNNNWANBMTI-UHFFFAOYSA-M 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- PMMYEEVYMWASQN-IMJSIDKUSA-N cis-4-Hydroxy-L-proline Chemical compound O[C@@H]1CN[C@H](C(O)=O)C1 PMMYEEVYMWASQN-IMJSIDKUSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000010960 cold rolled steel Substances 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- IFDVQVHZEKPUSC-UHFFFAOYSA-N cyclohex-3-ene-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCC=CC1C(O)=O IFDVQVHZEKPUSC-UHFFFAOYSA-N 0.000 description 1
- QSAWQNUELGIYBC-UHFFFAOYSA-N cyclohexane-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCCCC1C(O)=O QSAWQNUELGIYBC-UHFFFAOYSA-N 0.000 description 1
- RLMGYIOTPQVQJR-UHFFFAOYSA-N cyclohexane-1,3-diol Chemical compound OC1CCCC(O)C1 RLMGYIOTPQVQJR-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 150000001990 dicarboxylic acid derivatives Chemical class 0.000 description 1
- 125000005442 diisocyanate group Chemical group 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- BFMYDTVEBKDAKJ-UHFFFAOYSA-L disodium;(2',7'-dibromo-3',6'-dioxido-3-oxospiro[2-benzofuran-1,9'-xanthene]-4'-yl)mercury;hydrate Chemical compound O.[Na+].[Na+].O1C(=O)C2=CC=CC=C2C21C1=CC(Br)=C([O-])C([Hg])=C1OC1=C2C=C(Br)C([O-])=C1 BFMYDTVEBKDAKJ-UHFFFAOYSA-L 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- SZVJSHCCFOBDDC-UHFFFAOYSA-N ferrosoferric oxide Chemical compound O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- DCYOBGZUOMKFPA-UHFFFAOYSA-N iron(2+);iron(3+);octadecacyanide Chemical compound [Fe+2].[Fe+2].[Fe+2].[Fe+3].[Fe+3].[Fe+3].[Fe+3].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] DCYOBGZUOMKFPA-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- MOUPNEIJQCETIW-UHFFFAOYSA-N lead chromate Chemical compound [Pb+2].[O-][Cr]([O-])(=O)=O MOUPNEIJQCETIW-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000001989 lithium alloy Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 210000004379 membrane Anatomy 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- KHARCSTZAGNHOT-UHFFFAOYSA-N naphthalene-2,3-dicarboxylic acid Chemical compound C1=CC=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 KHARCSTZAGNHOT-UHFFFAOYSA-N 0.000 description 1
- RXOHFPCZGPKIRD-UHFFFAOYSA-N naphthalene-2,6-dicarboxylic acid Chemical compound C1=C(C(O)=O)C=CC2=CC(C(=O)O)=CC=C21 RXOHFPCZGPKIRD-UHFFFAOYSA-N 0.000 description 1
- WPUMVKJOWWJPRK-UHFFFAOYSA-N naphthalene-2,7-dicarboxylic acid Chemical compound C1=CC(C(O)=O)=CC2=CC(C(=O)O)=CC=C21 WPUMVKJOWWJPRK-UHFFFAOYSA-N 0.000 description 1
- 125000001038 naphthoyl group Chemical group C1(=CC=CC2=CC=CC=C12)C(=O)* 0.000 description 1
- 229910001000 nickel titanium Inorganic materials 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-N o-dicarboxybenzene Natural products OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 150000004880 oxines Chemical class 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- XNGIFLGASWRNHJ-BFGUONQLSA-N phthalic acid Chemical compound O[13C](=O)C1=CC=CC=C1[13C](O)=O XNGIFLGASWRNHJ-BFGUONQLSA-N 0.000 description 1
- 150000004885 piperazines Chemical class 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 229960003351 prussian blue Drugs 0.000 description 1
- 239000013225 prussian blue Substances 0.000 description 1
- JEXVQSWXXUJEMA-UHFFFAOYSA-N pyrazol-3-one Chemical compound O=C1C=CN=N1 JEXVQSWXXUJEMA-UHFFFAOYSA-N 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- NVKTUNLPFJHLCG-UHFFFAOYSA-N strontium chromate Chemical compound [Sr+2].[O-][Cr]([O-])(=O)=O NVKTUNLPFJHLCG-UHFFFAOYSA-N 0.000 description 1
- 229920005792 styrene-acrylic resin Polymers 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- UFDHBDMSHIXOKF-UHFFFAOYSA-N tetrahydrophthalic acid Natural products OC(=O)C1=C(C(O)=O)CCCC1 UFDHBDMSHIXOKF-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
- B32B15/09—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising polyesters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/88—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/40—Properties of the layers or laminate having particular optical properties
- B32B2307/402—Coloured
- B32B2307/4026—Coloured within the layer by addition of a colorant, e.g. pigments, dyes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/50—Properties of the layers or laminate having particular mechanical properties
- B32B2307/538—Roughness
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/12—Photovoltaic modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Laminated Bodies (AREA)
- Electroluminescent Light Sources (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明提供一种金属基板,其通过在金属板上层叠规定的皮膜,从而使皮膜表面平滑且使皮膜具有绝缘性。该金属基板用于衬底型薄膜太阳能电池或顶部发光型有机EL元件,在金属板的表面上经由粘接剂层叠有一层热塑性树脂膜,所述膜由固体颜料的体积分率为20%以下的组合物得到,膜厚为12μm以上且250μm以下,层叠后的膜表面的表面粗糙度Ra为30nm以下。
Description
技术领域
本发明涉及用于衬底型(substrate-type)薄膜太阳能电池或顶部发光型(top-emission-type)有机EL元件的金属基板,其为不仅皮膜表面平滑,而且皮膜表面具有绝缘性的金属基板。
背景技术
作为使用非晶硅或者如CdS、CuInSe2等化合物半导体的所谓薄膜半导体太阳能电池(以下称为薄膜太阳能电池),已知覆板型(super-straight-type)薄膜太阳能电池和衬底型薄膜太阳能电池这两种结构。
覆板型薄膜太阳能电池通常为依次层叠有基板、透明电极、光电转换层、背面电极的结构,从基板侧入射光。另一方面,衬底型薄膜太阳能电池通常为依次层叠有基板、背面电极、光电转换层、透明电极的结构,从透明电极侧入射光。
以往,作为薄膜太阳能电池的基板,使用透光性的玻璃或塑料等。但是,玻璃容易破裂而且存在如缺乏加工性、较重以及成本高等问题。此外,塑料因具有透湿性而必需设置阻气层,导致成本变得较贵,而且难以在不加热的条件下进行加工。
此外,衬底型薄膜太阳能电池由于从透明电极侧入射光,因此衬底型薄膜太阳能电池的基板,不要求透光性。故此,可以使用并非如玻璃或塑料之类的基板、而是如金属板之类的不具有透光性但加工性优异的基板。为了发挥薄膜太阳能电池的功能,需要基板的表面为平滑并且该表面具有绝缘性,但是,金属板本身的表面通常具有1μm左右以上的凹凸,而且具有导电性,因此不能直接作为基板使用。为此,如果以满足上述条件的方式在金属板上形成膜,则可以考虑将金属板用作基板。在以下的专利文献1和2提出了这样的基板。
专利文献1中记载了金属板层压用聚酯膜,其特征在于,膜表面的高度400nm以上的突起为150个/mm2以下,膜的三维表面粗糙度为8nm~25nm。但是,该专利文献1中,将上述膜层压于加热好的金属板,由此获得金属基板,不使用粘接剂,因此将该金属基板使用于衬底型薄膜太阳光发电或有机EL照明时,膜与金属板的粘接性可能不充分。
专利文献2中记载了有机电致发光照明基板用聚酯膜,其由基材层、和形成于该基材层的其至少一面的平滑层构成,该平滑层表面的表面粗糙度Ra为5.0nm以下。但是,专利文献2中,通过在基材层上设置表面平滑的平滑层且通过形成多层膜来使膜表面变得平滑,因此在成本方面存在问题。
现有技术文献
专利文献
专利文献1:日本专利公开公报特开平11-10724号
专利文献2:日本专利公开公报特开2012-146413号
发明内容
发明要解决的问题
本发明的目的在于提供一种金属基板,用于衬底型薄膜太阳能电池或顶部发光型有机EL元件,在不加热的条件下能够进行加工并且以低成本能够制得,甚至金属基板的表面平滑并且绝缘性优异。
用于解决问题的方案
本发明人完成了如下金属基板,即:用于衬底型薄膜太阳能电池或顶部发光型有机EL元件,并且层叠在金属板上的皮膜表面平滑且该皮膜表面具有绝缘性的金属基板。
也就是说,本发明是用于衬底型薄膜太阳能电池或顶部发光型有机EL元件的金属基板,该金属基板在金属板的表面上经由粘接剂层叠有一层热塑性树脂膜,该膜由固体颜料的体积分率为20%以下的组合物得到,膜厚为12μm以上且250μm以下,层叠后的膜表面的表面粗糙度Ra为30nm以下。
上述热塑性树脂优选为聚酯树脂。
上述层叠后的膜的表面粗糙度Ra优选为10nm以下。
发明效果
本发明涉及的金属基板,通过在金属板上层叠规定的膜,来使金属基板表面平滑,并且使金属基板具有绝缘性。通过使用该加工性优异的金属基板,能够以低成本制得薄膜太阳能电池或有机EL元件。
具体实施方式
本发明的金属基板是用于衬底型薄膜太阳能电池或顶部发光型有机EL元件的金属基板,其是在金属板的至少一面经由粘接剂层叠有一层热塑性树脂膜的金属基板。
[金属板]
本发明的金属基板采用的金属板是冷轧钢板、热浸镀纯锌钢板(GI)或合金化热浸镀Zn-Fe钢板(GA)、合金化热浸镀Zn-5%Al钢板(GF)、电镀纯锌钢板(EG)、电镀Zn-Ni钢板、铝板、钛板、镀铝锌合金(Galvalume)钢板等,优选不进行铬酸盐处理的金属板,但进行了铬酸盐处理或无处理的金属板都可以使用。金属板的厚度并无特别限定,可以适当使用0.3~2.5mm左右厚度的金属板。
[粘接剂]
本发明中采用的粘接剂含有树脂。该树脂并无特别限定,可列举聚烯烃树脂、聚酯树脂、聚苯乙烯树脂、聚氨酯树脂等,优选聚烯烃树脂或聚酯树脂。粘接剂形成用组合物中的固体成分优选为15~35质量%,更优选为20~30质量%。
聚酯树脂是通过二元酸等多元酸与多元醇类的缩合反应来获得的聚酯树脂。
作为聚酯树脂的原料使用的多元酸,例如可列举:马来酸、马来酸酐、富马酸、衣康酸、衣康酸酐等α,β-不饱和二元酸;邻苯二甲酸、邻苯二甲酸酐、卤代邻苯二甲酸酐、间苯二甲酸、对苯二甲酸、四氢邻苯二甲酸、四氢邻苯二甲酸酐、六氢邻苯二甲酸、六氢间苯二甲酸、六氢对苯二甲酸、环戊二烯-马来酸酐加成物、琥珀酸、丙二酸、戊二酸、己二酸、癸二酸、1,10-癸二甲酸、2,6-萘二甲酸、2,7-萘二甲酸、2,3-萘二甲酸、2,3-萘二甲酸酐、4,4’-联苯二甲酸、以及它们的二烷基酯等饱和二元酸等,并无特别限定。多元酸可以仅使用一种,也可以适当混合两种以上来使用。
作为聚酯树脂的原料使用的多元醇类,例如可列举:乙二醇、二乙二醇、聚乙二醇等乙二醇类;丙二醇、二丙二醇、聚丙二醇等丙二醇类;2-甲基-1,3-丙二醇、1,3-丁二醇、双酚A与环氧丙烷或环氧乙烷的加成物;甘油、三羟甲基丙烷、1,3-丙二醇、1,2-环己二醇、1,3-环己二醇、1,4-环己二醇、对二甲苯二醇、双环己基-4,4’-二醇、2,6-萘烷二醇、三(2-羟乙基)异氰脲酸酯等,并无特别限定。此外还可以使用乙醇胺等氨基醇类。这些多元醇类可以仅使用一种,也可以适当混合两种以上。此外,根据需要还可以通过利用环氧树脂、二异氰酸酯、二环戊二烯等进行改性。
本发明中采用的粘接剂,可以适当使用各种市售品。特别是作为粘接剂的市售品,例如可列举:东亚合成公司制ARON MELT(注册商标)PES系列,其是热塑性聚酯系热熔粘接剂;东亚合成公司制ARON MELT(注册商标)PPET系列、东亚合成公司制ARON MIGHTY(注册商标)FS-175SV10、东亚合成公司制Aron Mighty(注册商标)AS-60等,它们是以改性烯烃为主成分的热熔粘接剂。
使用上述市售品作为粘接剂时,使用甲基乙基酮、甲基异丁基酮、甲苯、二甲苯等稀释剂来稀释这些市售品,将该稀释后的粘接剂涂布于金属板。
[热塑性树脂膜]
本发明中采用的热塑性树脂膜,并无特别限定,可列举:聚酯膜、聚乙烯膜、聚丙烯膜、聚苯乙烯膜、聚乙烯醇系膜、聚氯乙烯膜、聚偏二氯乙烯膜、氟树脂膜、纤维素系膜、聚碳酸酯膜、聚酰胺膜等。其中优选使用聚酯膜,更优选使用聚对苯二甲酸乙二酯(PET)膜或聚萘二甲酸乙二酯(PEN)膜,进一步优选使用PEN膜。在制作聚酯膜时使用的聚酯树脂,可以采用与使用于上述粘接剂的聚酯树脂的制法相同的制法来进行制作。
对于本发明中采用的热塑性树脂膜而言,膜单体(粘接于金属板之前的状态下的膜)的表面粗糙度Ra优选为30nm以下,膜单体的表面粗糙度Ra更优选为10nm以下。如果使用膜单体的表面粗糙度Ra超过30nm的膜来制作金属基板,则导致金属基板的表面粗糙度Ra变大,将膜粘接于金属基板的状态下的膜表面的凹凸成为原因,可能导致因电极间的短路而引起的动作不良。
本发明中采用的热塑性树脂膜,可以适当使用各种市售品。特别是作为聚酯树脂的市售品,例如可列举:尤尼吉可公司制EMBLET(注册商标)P652、帝人杜邦薄膜公司制TEONEX(注册商标)Q65FA等。
层叠的热塑性树脂膜的膜厚为12μm以上且250μm以下。如果膜厚小于12μm,则热塑性树脂膜可能存在缺陷部,导致金属基板的耐电压低于0.1kV,可能确保不了耐电压(绝缘耐性)。此外,如果膜厚超过250μm,则对金属基板进行切割加工时容易产生膜的切割渣滓,可能降低金属基板制造生产线的生产效率。
[膜表面的平滑性]
本发明的金属基板需要将膜表面为平滑。具体而言,粘接于金属基板的膜(层叠后的膜)的表面粗糙度Ra为30nm以下,粘接于金属基板的膜的表面粗糙度Ra优选为10nm以下。如果粘接于金属基板的膜的表面粗糙度Ra超过30nm,则膜表面的凹凸成为原因,可能导致因电极间的短路而引起的动作不良。应予说明,对于藉由附着灰尘或垃圾等的粒子而产生的表面的凹凸,灰尘或垃圾等的粒子远远大于30nm,因此可以利用研磨等的平滑化而容易地除去。因此,由灰尘或垃圾等的粒子导致的凹凸与引起动作不良相关的可能性极低。粘接于金属基板的膜的表面粗糙度Ra,可以采用后述的测定方法来进行测定。
[颜料]
为了使膜表面平滑,具体为使膜表面的表面粗糙度Ra为30nm以下时,优选膜不含有固体颜料。但是在需要使用着色膜的情况下,优选将膜形成用组合物中的固体颜料的体积分率设为20%以下。固体颜料的粒径通常远大于30nm,因此如果膜形成用组合物中的固体颜料的体积分率超过20%,则难以使膜表面的表面粗糙度Ra成为30nm以下。
作为用于着色为下述各个颜色时的颜料种类的例子可列举,白色:氧化钛、碳酸钙、氧化锌、硫酸钡、立德粉、铅白等无机系颜料,黑色:苯胺黑、尼格洛辛(nigrosine)等有机系颜料;炭黑、铁黑等无机系颜料,红色:不溶性偶氮系(萘酚系及酰基苯胺系)或可溶性偶氮系等有机系颜料;铁丹、镉红、铅丹等无机系颜料,黄色:不溶性偶氮系(萘酚系和酰基苯胺系)、可溶性偶氮系、喹吖啶酮系等有机系颜料;铬黄、镉黄、镍钛黄、黄丹、铬酸锶等无机系颜料,绿色:有机酞菁系颜料,青色:有机酞菁系颜料、双噁嗪系颜料、普鲁士蓝、群青、钴蓝、翡翠绿等无机系颜料,橙色:苯并咪唑酮系、吡唑啉酮系等有机系颜料等。上述着色颜料中,将同色而化学结构不同的颜料或不同色的着色颜料2种以上以适当的混合比加以混合,可以着色成为灰色、茶色、紫色、红紫色、青紫色、橙色、黄金色等所需的颜色。
例如氧化钛中,例如为粒状的情况下,推荐平均粒径大概为0.1~0.5μm,优选为0.2μm以上,优选为0.4μm以下,更优选为0.2μm以上,更优选为0.3μm以下。如果平均粒径超过0.5μm,则由含氧化钛的膜形成用组合物所形成的膜表面的表面粗糙度Ra难以达到30nm以下。
其中,上述氧化钛的平均粒径,是指通过通常的粒度分布计对分级后的氧化钛粒子的粒度分布进行测定,由依据该测定结果所算出的从小粒径侧起的累积值50%的粒度(D50)。该粒度分布可以通过照射光至粒子所产生的衍射或散射的强度图案来测定,这样的粒度分布计例如有日机装公司制的Microtrack9220FRA或Microtrack HRA等。
应予说明,满足上述优选的平均粒径的氧化钛可以使用市售品,例如可列举TAYCA公司制的TITANIX(注册商标)JR-301(平均粒径0.30μm)、JR-603(平均粒径0.28μm)、JR-806(平均粒径0.25μm)、JRNC(平均粒径0.37μm)等。
应予说明,为了抑制颜料的偏析,可以在膜形成用组合物中添加颜料分散剂。合适的颜料分散剂为选自由水溶性丙烯酸树脂、水溶性苯乙烯丙烯酸树脂和非离子型表面活性剂构成的组中的1种以上。使用这些颜料分散剂时,在着色涂膜中残存颜料分散剂。
[耐电压]
耐电压采用后述的方法进行测定,优选为0.1kV以上。更优选为0.3kV以上,进一步优选为1.0kV以上。如果耐电压低于0.1kV,则可能导致因电极间的短路而引起的动作不良。
[制造方法]
在金属板上涂布粘接剂,然后进行烧接,其后,将膜粘接在粘接剂上,由此可以制得本发明的金属基板。
在金属板上涂布粘接剂的方法,并无特别限定,可以适当采用已知的方法。作为组合物的涂布方法,例如可列举:刮棒涂布法、辊式涂布法、淋幕式涂布法、喷涂法、喷淋法等,其中从成本等观点考虑,优选刮棒涂布法、辊式涂布法、喷淋法。
在涂布粘接剂后,进行烧接。作为粘接剂的烧接温度,例如优选为80℃以上且200℃以下,更优选为100℃以上且180℃以下。通过该烧接来制作在金属板上涂布有粘接剂的粘接剂涂装金属板。应予说明,烧接温度是到达板温(Peak Metal Temperature:PMT)。
接着,在粘接剂涂装金属板的粘接剂涂布面上粘接膜。在粘接剂涂装金属板上粘接膜的方法,并无特别限定,可以适当采用已知的方法,优选加压粘接法。加压粘接法是在规定时间且规定温度的状态下施加规定压力来进行粘接的方法,加压粘接法优选在80℃以上且200℃以下进行,更优选在100℃以上且180℃以下进行。此外,加压粘接法优选进行5分钟以下,更优选进行3分钟以下。加压粘接法优选在0.5kgf/cm2以上且100kgf/cm2以下的压力下进行,更优选在1kgf/cm2以上且50kgf/cm2以下的压力下进行。
[衬底型薄膜太阳能电池]
对具备本发明的金属基板的衬底型薄膜太阳能电池进行说明。衬底型太阳能电池只要具备本发明的金属基板即可,可以是公知的任一结构,例如,基本上是在本发明的金属基板的膜上依次层叠有背面电极、光电转换层、透明电极的结构。光电转换层是吸收透过透明电极而到达的光并产生电流的层,背面电极和透明电极均是用于输出在光电转换层产生的电流的电极,均由导电性材料构成。光入射侧的透明电极必需具有透光性。背面电极、光电转换层及透明电极,可以使用与公知的衬底型薄膜太阳能电池同样的材料。
背面电极并无特别限定,例如可以使用Mo、Cr、W等金属以及这些金属组合而成的电极。背面电极可以是单层结构,也可以是如双层结构等的层叠结构。背面电极的厚度并无特别限定,厚度优选为0.1μm以上,更优选为0.45~1.0μm。
光电转换层的构成并无特别限定,例如为至少一种黄铜矿结构的化合物半导体。此外,光电转换层可以是由Ib族元素、IIIb族元素和VIb族元素构成的至少一种化合物半导体。
为了进一步获得高的光吸收率、高的光电转换效率,光电转换层优选为由选自由Cu和Ag构成的组中的至少一种Ib族元素、选自由Al、Ga和In构成的组中的至少一种IIIb族元素、以及选自由S、Se和Te构成的组中的至少一种VIb族元素而构成的至少一种化合物半导体。作为该化合物半导体,可列举CuAlS2、CuGaS2、CuInS2、CuAlSe2、CuGaSe2、CuInSe2(CIS)、AgAlS2、AgGaS2、AgInS2、AgAlSe2、AgGaSe2、AgInSe2、AgAlTe2、AgGaTe2、AgInTe2、Cu(In1-xGax)Se2(CIGS)、Cu(In1-xAlx)Se2、Cu(In1-xGax)(S、Se)2、Ag(In1-xGax)Se2、和Ag(In1- xGax)(S、Se)2等。
透明电极例如由添加有Al、B、Ga、Sb等的ZnO、ITO(铟-锡氧化物)、或SnO2以及它们的组合所构成。透明电极可以是单层结构,也可以是如双层结构等的层叠结构。此外,透明电极的厚度并无特别限定,优选为0.3~1μm。
衬底型薄膜太阳能电池可以采用公知的方法制作,例如可以用以下的制造方法来制作衬底型薄膜太阳能电池。首先,在本发明的金属基板上,利用溅镀法、真空蒸镀法、热CVD法、湿式涂布法等以往已知的方法来形成背面电极。接着,在背面电极上利用溅镀法、真空蒸镀法、热CVD法、湿式涂布法等以往已知的方法来形成光电转换层。然后,在光电转换层上利用溅镀法、真空蒸镀法、热CVD法、湿式涂布法等以往已知的方法来形成透明电极。
应予说明,在形成透明电极时为了保护光电转换层,可以在光电转换层与透明电极之间设置缓冲层。此外,可以在透明电极上设置密封件。
[顶部发光型有机EL元件]
本发明的金属基板还可以应用于顶部发光型有机EL元件。上述顶部发光型有机EL元件只要具有本发明的金属基板即可,可以是公知的任一结构,例如,基本上是在本发明的金属基板的膜上依次层叠有电极、有机层、透明导电膜的结构。电极、有机层、透明导电膜,可以使用与公知的顶部发光型薄膜太阳能电池同样的材料。顶部发光型有机EL元件中,光透过透明导电性膜(不透过基板)而被输出,因此基板可以使用不透明的金属板。
电极,例如可以使用铟-锡氧化物(ITO)、铟-锌氧化物(IZO)、锡氧化物、Au等金属的极薄膜、导电性高分子、导电性的有机材料、含掺杂剂(给体或受体)的有机层、导电体与导电性有机材料(含高分子)的混合物、或它们的层叠体等。电极可以通过对这些材料使用溅镀法或离子镀法等气相生长法来进行成膜。
有机层的有机发光层的材料,例如可以使用蒽、萘、芘、并四苯、晕苯、苝、酞苝(phthaloperylene)、萘酰苝(naphthaloperylene)、二苯基丁二烯、四苯基丁二烯、香豆素、噁二唑、双苯并噁唑啉、双苯乙烯、环戊二烯、喹啉金属络合物、三(8-羟基喹啉)铝络合物、三(4-甲基-8-喹啉)铝络合物、三(5-苯基-8-喹啉)铝络合物、氨基喹啉金属络合物、苯并喹啉金属络合物、三-(对联三苯-4-基)胺、吡喃、喹吖啶酮、红荧烯、以及它们的衍生物、或者1-芳基-2,5-二(2-噻吩基)吡咯衍生物、二苯乙烯基苯衍生物、苯乙烯基亚芳基衍生物、苯乙烯基胺衍生物、以及含有包含这些发光性化合物的基团为分子的一部分的化合物或高分子等。另外,不仅可以使用以上述化合物为代表的源自荧光色素的化合物,还可以使用所谓磷光发光材料(例如Ir络合物、Os络合物、Pt络合物、铕络合物)等发光材料、或分子内含有这些的化合物或高分子。有机层可以通过溅镀法、真空蒸镀法等以往已知的方法来形成。应予说明,有机层中除了包含有机发光层之外还可以包含空穴注入层、空穴传输层、电子传输层、电子注入层等。
对于透明导电膜而言,作为材料可以使用Al或银等的单体、或者Al或银等与其它电极材料组合而成的层叠结构的材料。电极材料的组合可列举:碱金属与Al的层叠体、碱金属与银的层叠体、碱金属的卤化物与Al的层叠体、碱金属的氧化物与Al的层叠体、碱土金属或稀土类金属与Al的层叠体、这些金属与其它金属的合金等。具体而言,例如可列举:钠、钠-钾合金、锂、镁等与Al的层叠体、镁-银混合物、镁-铟混合物、铝-锂合金、LiF与Al的混合物、Al与Al2O3的混合物等。透明导电膜可以通过溅镀法、真空蒸镀法等以往已知的方法来形成。
本申请基于2014年3月31日申请的日本国专利申请第2014-073359号要求优先权的利益。2014年3月31日申请的日本国专利申请第2014-073359号的说明书的全部内容引入本申请用于参考。
实施例
以下列举实施例更具体地说明本发明,但本发明不受下述实施例的限制,还可以在能符合前述及后述的主旨的范围内适当地加入变更进行实施,这些也都包含在本发明的技术范围内。此外,实施例中采用的评价方法如下所述。
<耐电压(绝缘耐性)>
用后述的制作方法制作尺寸50mm×50mm×0.8mm的试样后,按照JIS标准C2110-1,在试样的一侧的面使外径20mm的球形电极以负荷500gf接触,在该状态下使用绝缘强度击穿试验装置,以20~40秒左右,以引起绝缘击穿那样的一定速度在厚度方向施加直流电压,测定了产生绝缘击穿时的电压。进行了5次上述电压测定,将其平均值作为耐电压。
<平均表面粗糙度Ra>
对于用后述的制作方法得到的试样,使用原子力显微镜(Atomic ForceMicroscope,AFM)(精工电子工业制SPI3800N),对于试样的层叠有膜的一侧的表面,测定了10μm×10μm区域的任意3处的表面粗糙度,将其平均值作为平均表面粗糙度Ra。
(粘接剂涂装金属板1的制作方法)
将电镀锌钢板(板厚0.8mm)作为金属板,使用安田精机制作所公司制的刮棒涂布机绕线支数60(bar coater number 60),在金属板的表面上涂布分散液,所述分散液是将以烯烃树脂为主成分的热塑性粘接剂(东亚合成公司制ARON MELT(注册商标)PPET(注册商标)1505SG28)70质量%与甲基乙基酮30质量%混合而得的分散液,以到达板温(PeakMetal Temperature:PMT)达到100℃的方式进行2分钟烧接而进行干燥,得到了粘接剂的膜厚为5.7μm的粘接剂涂装金属板1。粘接剂涂装金属板1的制作条件及物性等示于表1。
(粘接剂涂装金属板2的制作方法)
将电镀锌钢板(板厚0.8mm)作为金属板,使用安田精机制作所公司制的刮棒涂布机绕线支数60,在金属板的表面上涂布分散液,所述分散液是将以聚酯树脂作为主成分的热塑性粘接剂(东亚合成公司制ARON MELT(注册商标)PES(注册商标)360HVXM30)90质量%与甲基乙基酮10质量%混合而得的分散液,以到达板温(Peak Metal Temperature:PMT)达到100℃的方式进行2分钟烧接而进行干燥,得到了粘接剂的膜厚为12.4μm的粘接剂涂装金属板2。粘接剂涂装金属板2的制作条件及物性等示于表1。
(粘接剂涂装金属板3的制作方法)
在粘接剂涂装金属板2中,除了使分散液为将热塑性粘接剂(东亚合成公司制ARONMELT(注册商标)PES(注册商标)360HVXM30)50质量%与甲基乙基酮50质量%混合而得的分散液之外,与粘接剂涂装金属板2同样操作得到了粘接剂的膜厚为7.0μm的粘接剂涂装金属板3。粘接剂涂装金属板3的制作条件及物性等示于表1。
(粘接剂涂装金属板4的制作方法)
在粘接剂涂装金属板2中,除了使分散液为将热塑性粘接剂(东亚合成公司制ARONMELT(注册商标)PES(注册商标)360HVXM30)70质量%与甲基乙基酮30质量%混合而得的分散液并且使用刮棒涂布机绕线支数30之外,与粘接剂涂装金属板2同样操作得到了粘接剂的膜厚为4.9μm的粘接剂涂装金属板4。粘接剂涂装金属板4的制作条件及物性等示于表1。
(粘接剂涂装金属板5的制作方法)
在粘接剂涂装金属板2中,除了使分散液为将热塑性粘接剂(东亚合成公司制ARONMELT(注册商标)PES(注册商标)360HVXM30)70质量%与甲基乙基酮30质量%混合而得的分散液并且使用刮棒涂布机绕线支数20之外,与粘接剂涂装金属板2同样操作得到了粘接剂的膜厚为3.2μm的粘接剂涂装金属板5。粘接剂涂装金属板5的制作条件及物性等示于表1。
(粘接剂涂装金属板6的制作方法)
在粘接剂涂装金属板2中,除了使分散液为将热塑性粘接剂(东亚合成公司制ARONMELT(注册商标)PES(注册商标)360HVXM30)70质量%与甲基乙基酮30质量%混合而得的分散液并且使用刮棒涂布机绕线支数10之外,与粘接剂涂装金属板2同样操作得到了粘接剂的膜厚为1.6μm的粘接剂涂装金属板6。粘接剂涂装金属板6的制作条件及物性等示于表1。
表1
(实施例1)
在粘接剂涂装金属板1的粘接剂涂布面上搁置25μm的PET膜1(尤尼吉可公司制EMBLET(注册商标)P652:表面粗糙度Ra 20nm),在温度180℃且压力10kgf/cm2的条件下,加压粘接1分钟,由此使粘接剂涂装金属板1与PET膜粘接而得到了金属基板。金属基板的制作条件、所得金属基板的物性及评价结果示于表2。
(实施例2)
实施例1中,除了使用粘接剂涂装金属板2来代替粘接剂涂装金属板1之外,与实施例1同样操作得到了金属基板。金属基板的制作条件、所得金属基板的物性及评价结果示于表2。
(实施例3)
在粘接剂涂装金属板1的粘接剂涂布面上搁置100μm的PEN膜(帝人杜邦薄膜公司制TEONEX(注册商标)Q65FA:表面粗糙度Ra 1.2nm),在温度180℃且压力50kgf/cm2的条件下,加压粘接1分钟,由此使粘接剂涂装金属板1与上述PEN膜粘接而得到了金属基板。金属基板的制作条件、所得金属基板的物性及评价结果示于表2。
(实施例4)
实施例3中,除了使用粘接剂涂装金属板2来代替粘接剂涂装金属板1之外,与实施例3同样操作得到了金属基板。金属基板的制作条件、所得金属基板的物性及评价结果示于表2。
(实施例5)
在粘接剂涂装金属板3的粘接剂涂布面上搁置100μm的上述PEN膜(Q65FA),在温度100℃且压力1kgf/cm2的条件下,加压粘接1分钟,由此使粘接剂涂装金属板3与上述PEN膜粘接而得到了金属基板。所得金属基板的物性及评价结果示于表2。
(实施例6、7)
实施例5中,除了使加压粘接时的温度为120℃、140℃之外,与实施例5同样操作得到了金属基板。金属基板的制作条件、所得金属基板的物性及评价结果示于表2。
(实施例8~16)
如表2所记载的,实施例5中,除了变更粘接剂涂装金属板和加压粘接时的温度的至少一者之外,与实施例5同样操作得到了金属基板。金属基板的制作条件、所得金属基板的物性及评价结果示于表2。
(实施例17~19)
实施例4中,除了使加压粘接时的温度为100℃、120℃、140℃且使加压粘接时的压力为1kgf/cm2之外,与实施例4同样操作得到了金属基板。金属基板的制作条件、所得金属基板的物性及评价结果示于表2。
(比较例1)
实施例1中,除了使用50μm的PET膜2(尤尼吉可公司制E5101:表面粗糙度Ra 50nm)来代替25μm的PET膜1之外,与实施例1同样操作得到了金属基板。金属基板的制作条件、所得金属基板的物性及评价结果示于表2。
(比较例2)
实施例2中,除了使用50μm的PET膜2(E5101)来代替25μm的PET膜1之外,与实施例2同样操作得到了金属基板。金属基板的制作条件、所得金属基板的物性及评价结果示于表2。
产业上的可利用性
通过在金属板上层叠规定的皮膜,从而成为皮膜表面平滑并且皮膜具有绝缘性的金属基板,由此可以用于衬底型薄膜太阳能电池或顶部发光型有机EL元件。
Claims (3)
1.一种金属基板,其特征在于,用于衬底型薄膜太阳能电池或顶部发光型有机EL元件,其中,
在金属板的表面上经由粘接剂层叠有一层热塑性树脂膜,
所述膜由固体颜料的体积分率为20%以下的组合物得到,膜厚为12μm以上且250μm以下,层叠后的膜表面的表面粗糙度Ra为30nm以下。
2.根据权利要求1所述的金属基板,其特征在于,所述热塑性树脂为聚酯树脂。
3.根据权利要求1或2所述的金属基板,其特征在于,所述层叠后的膜的表面粗糙度Ra为10nm以下。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014073359A JP6510760B2 (ja) | 2014-03-31 | 2014-03-31 | 金属基板 |
JP2014-073359 | 2014-03-31 | ||
PCT/JP2015/057684 WO2015151773A1 (ja) | 2014-03-31 | 2015-03-16 | 金属基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106165112A true CN106165112A (zh) | 2016-11-23 |
CN106165112B CN106165112B (zh) | 2019-05-10 |
Family
ID=54240105
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201580016824.0A Active CN106165112B (zh) | 2014-03-31 | 2015-03-16 | 金属基板 |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP6510760B2 (zh) |
KR (2) | KR20180135122A (zh) |
CN (1) | CN106165112B (zh) |
MY (1) | MY181305A (zh) |
TW (1) | TWI598464B (zh) |
WO (1) | WO2015151773A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021103805A1 (zh) * | 2019-11-29 | 2021-06-03 | 宝山钢铁股份有限公司 | 具有优异漆膜附着力的热成形部件及其制造方法 |
CN113226738A (zh) * | 2018-12-28 | 2021-08-06 | 杰富意钢铁株式会社 | 膜层压金属板、挠性器件用基板、以及有机el器件用基板 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2951191C (en) | 2014-07-02 | 2022-09-13 | Inflectis Bioscience | Novel therapeutic uses of benzylideneguanidine derivatives for the treatment of proteopathies |
JP5946578B1 (ja) * | 2015-12-09 | 2016-07-06 | 尾池工業株式会社 | 表面平滑積層体の製造方法 |
JP6742268B2 (ja) * | 2017-03-31 | 2020-08-19 | 富士フイルム株式会社 | 熱可塑性樹脂フィルムの製造方法、導電性フィルムの製造方法、熱可塑性樹脂フィルム、及び、導電性フィルム |
JP7435802B2 (ja) | 2021-03-23 | 2024-02-21 | Jfeスチール株式会社 | フィルムラミネート金属板およびその製造方法、ならびにフレキシブルエレクトロニクス用基板および有機el用基板 |
WO2024075738A1 (ja) * | 2022-10-03 | 2024-04-11 | 東洋紡株式会社 | 長尺積層体、光起電力装置、及び光起電力装置の製造方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002025763A (ja) * | 2000-07-11 | 2002-01-25 | Nisshin Steel Co Ltd | 有機el素子用絶縁基板 |
JP2003282258A (ja) * | 2002-03-25 | 2003-10-03 | Fuji Photo Film Co Ltd | 発光素子 |
CN101805578A (zh) * | 2010-03-19 | 2010-08-18 | 苏州赛伍应用技术有限公司 | 聚酯树脂粘接剂及其在制备太阳能电池背面保护膜中的用途 |
JP2011108883A (ja) * | 2009-11-18 | 2011-06-02 | Mitsubishi Chemicals Corp | 太陽電池 |
CN102812563A (zh) * | 2010-02-10 | 2012-12-05 | 塔塔钢铁荷兰科技有限责任公司 | 在金属衬底上制备太阳能电池的层叠系统及其制备方法 |
CN103522658A (zh) * | 2013-09-18 | 2014-01-22 | 芜湖群跃电子科技有限公司 | 一种金属穿孔式太阳能电池用背板及其制备方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1110724A (ja) | 1997-06-25 | 1999-01-19 | Toray Ind Inc | 金属板ラミネート用ポリエステルフィルム |
JP2011222779A (ja) * | 2010-04-09 | 2011-11-04 | Dainippon Printing Co Ltd | 薄膜素子用基板の製造方法、薄膜素子の製造方法および薄膜トランジスタの製造方法 |
WO2012048888A1 (en) * | 2010-10-14 | 2012-04-19 | Tata Steel Nederland Technology B.V. | Preparation of a polyetherimide intermediate and its application on metal substrates |
JP2012146413A (ja) | 2011-01-07 | 2012-08-02 | Teijin Dupont Films Japan Ltd | 有機エレクトロルミネッセンス照明基板用ポリエステルフィルム |
JP5853567B2 (ja) * | 2011-10-11 | 2016-02-09 | 日新製鋼株式会社 | 有機el素子用基板及びその製造方法、並びに有機el素子 |
CN107571572B (zh) * | 2013-03-28 | 2019-10-18 | 株式会社神户制钢所 | 金属基板、使用其的衬底型薄膜太阳能电池及顶部发光型有机el元件 |
-
2014
- 2014-03-31 JP JP2014073359A patent/JP6510760B2/ja active Active
-
2015
- 2015-03-16 WO PCT/JP2015/057684 patent/WO2015151773A1/ja active Application Filing
- 2015-03-16 KR KR1020187036144A patent/KR20180135122A/ko not_active Application Discontinuation
- 2015-03-16 MY MYPI2016703535A patent/MY181305A/en unknown
- 2015-03-16 CN CN201580016824.0A patent/CN106165112B/zh active Active
- 2015-03-16 KR KR1020167027058A patent/KR20160129870A/ko active Application Filing
- 2015-03-26 TW TW104109762A patent/TWI598464B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002025763A (ja) * | 2000-07-11 | 2002-01-25 | Nisshin Steel Co Ltd | 有機el素子用絶縁基板 |
JP2003282258A (ja) * | 2002-03-25 | 2003-10-03 | Fuji Photo Film Co Ltd | 発光素子 |
JP2011108883A (ja) * | 2009-11-18 | 2011-06-02 | Mitsubishi Chemicals Corp | 太陽電池 |
CN102812563A (zh) * | 2010-02-10 | 2012-12-05 | 塔塔钢铁荷兰科技有限责任公司 | 在金属衬底上制备太阳能电池的层叠系统及其制备方法 |
CN101805578A (zh) * | 2010-03-19 | 2010-08-18 | 苏州赛伍应用技术有限公司 | 聚酯树脂粘接剂及其在制备太阳能电池背面保护膜中的用途 |
CN103522658A (zh) * | 2013-09-18 | 2014-01-22 | 芜湖群跃电子科技有限公司 | 一种金属穿孔式太阳能电池用背板及其制备方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113226738A (zh) * | 2018-12-28 | 2021-08-06 | 杰富意钢铁株式会社 | 膜层压金属板、挠性器件用基板、以及有机el器件用基板 |
WO2021103805A1 (zh) * | 2019-11-29 | 2021-06-03 | 宝山钢铁股份有限公司 | 具有优异漆膜附着力的热成形部件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20180135122A (ko) | 2018-12-19 |
KR20160129870A (ko) | 2016-11-09 |
MY181305A (en) | 2020-12-21 |
JP2015195315A (ja) | 2015-11-05 |
TWI598464B (zh) | 2017-09-11 |
CN106165112B (zh) | 2019-05-10 |
TW201602411A (zh) | 2016-01-16 |
WO2015151773A1 (ja) | 2015-10-08 |
JP6510760B2 (ja) | 2019-05-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106165112B (zh) | 金属基板 | |
TWI523295B (zh) | 包含可撓式基板之有機發光裝置及其製備方法 | |
CN107571572B (zh) | 金属基板、使用其的衬底型薄膜太阳能电池及顶部发光型有机el元件 | |
CN104321898B (zh) | 用于有机电子器件的基板 | |
CN202145468U (zh) | 一种柔性有机电致发光器件 | |
TW200915909A (en) | Substrate with barrier layer, display device and manufacturing method thereof | |
CN105103329B (zh) | 制备有机电子器件的方法 | |
CN103824969B (zh) | 具有多层金属复合电极的有机电致发光器件 | |
CN104769739B (zh) | 透明导电膜和包含所述透明导电膜的有机发光器件 | |
CN106664754B (zh) | 有机电致发光元件 | |
CN106749050A (zh) | 一种以环状二酮为核心的热激活延迟荧光oled材料及其应用 | |
KR20130135186A (ko) | 플렉서블 전극 및 이의 제조방법 | |
CN107409446A (zh) | 金属基板 | |
JP2016195162A (ja) | 金属基板 | |
CN104167502A (zh) | 一种有机电致发光器件及其制备方法 | |
TW201351677A (zh) | 半導體元件用基板及其製造方法、以及半導體元件、光電轉換元件、發光元件及電子電路 | |
TWI622494B (zh) | 包括有機材料遮罩的層壓板及使用其之有機發光裝置的製備方法 | |
CN104103772A (zh) | 有机电致发光器件及其制作方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |