TWI598464B - Metal substrate - Google Patents

Metal substrate Download PDF

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Publication number
TWI598464B
TWI598464B TW104109762A TW104109762A TWI598464B TW I598464 B TWI598464 B TW I598464B TW 104109762 A TW104109762 A TW 104109762A TW 104109762 A TW104109762 A TW 104109762A TW I598464 B TWI598464 B TW I598464B
Authority
TW
Taiwan
Prior art keywords
film
adhesive
metal substrate
metal
metal plate
Prior art date
Application number
TW104109762A
Other languages
English (en)
Chinese (zh)
Other versions
TW201602411A (zh
Inventor
平野康雄
岩辰彦
渡瀬岳史
水野雅夫
志田陽子
Original Assignee
神戶製鋼所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 神戶製鋼所股份有限公司 filed Critical 神戶製鋼所股份有限公司
Publication of TW201602411A publication Critical patent/TW201602411A/zh
Application granted granted Critical
Publication of TWI598464B publication Critical patent/TWI598464B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B32B15/09—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising polyesters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/40—Properties of the layers or laminate having particular optical properties
    • B32B2307/402—Coloured
    • B32B2307/4026—Coloured within the layer by addition of a colorant, e.g. pigments, dyes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/50—Properties of the layers or laminate having particular mechanical properties
    • B32B2307/538—Roughness
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/12—Photovoltaic modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Laminated Bodies (AREA)
  • Electroluminescent Light Sources (AREA)
  • Photovoltaic Devices (AREA)
TW104109762A 2014-03-31 2015-03-26 Metal substrate TWI598464B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014073359A JP6510760B2 (ja) 2014-03-31 2014-03-31 金属基板

Publications (2)

Publication Number Publication Date
TW201602411A TW201602411A (zh) 2016-01-16
TWI598464B true TWI598464B (zh) 2017-09-11

Family

ID=54240105

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104109762A TWI598464B (zh) 2014-03-31 2015-03-26 Metal substrate

Country Status (6)

Country Link
JP (1) JP6510760B2 (ja)
KR (2) KR20180135122A (ja)
CN (1) CN106165112B (ja)
MY (1) MY181305A (ja)
TW (1) TWI598464B (ja)
WO (1) WO2015151773A1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10709677B2 (en) 2014-07-02 2020-07-14 Inflectis Bioscience Therapeutic uses of benzylideneguanidine derivatives for the treatment of proteopathies
JP5946578B1 (ja) * 2015-12-09 2016-07-06 尾池工業株式会社 表面平滑積層体の製造方法
JP6742268B2 (ja) * 2017-03-31 2020-08-19 富士フイルム株式会社 熱可塑性樹脂フィルムの製造方法、導電性フィルムの製造方法、熱可塑性樹脂フィルム、及び、導電性フィルム
CN113226738A (zh) * 2018-12-28 2021-08-06 杰富意钢铁株式会社 膜层压金属板、挠性器件用基板、以及有机el器件用基板
CN112877592B (zh) * 2019-11-29 2022-06-28 宝山钢铁股份有限公司 具有优异漆膜附着力的热成形部件及其制造方法
EP4289615A4 (en) 2021-03-23 2024-07-31 Jfe Steel Corp FILM LAMINATED METAL SHEET, METHOD FOR MANUFACTURING SAME, FLEXIBLE ELECTRONICS SUBSTRATE AND ORGANIC EL SUBSTRATE
TW202423263A (zh) * 2022-10-03 2024-06-01 日商東洋紡股份有限公司 長積層體、光伏打裝置、以及光伏打裝置的製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1110724A (ja) 1997-06-25 1999-01-19 Toray Ind Inc 金属板ラミネート用ポリエステルフィルム
JP2002025763A (ja) * 2000-07-11 2002-01-25 Nisshin Steel Co Ltd 有機ｅｌ素子用絶縁基板
JP3942017B2 (ja) * 2002-03-25 2007-07-11 富士フイルム株式会社 発光素子
JP2011222779A (ja) * 2010-04-09 2011-11-04 Dainippon Printing Co Ltd 薄膜素子用基板の製造方法、薄膜素子の製造方法および薄膜トランジスタの製造方法
JP2011108883A (ja) * 2009-11-18 2011-06-02 Mitsubishi Chemicals Corp 太陽電池
EP2534702A1 (en) * 2010-02-10 2012-12-19 Tata Steel Nederland Technology BV Layered system for producing a solar cell on a metal substrate, method for producing said layered system
CN101805578B (zh) * 2010-03-19 2012-07-25 苏州赛伍应用技术有限公司 一种太阳能电池背面保护膜
WO2012048888A1 (en) * 2010-10-14 2012-04-19 Tata Steel Nederland Technology B.V. Preparation of a polyetherimide intermediate and its application on metal substrates
JP2012146413A (ja) 2011-01-07 2012-08-02 Teijin Dupont Films Japan Ltd 有機エレクトロルミネッセンス照明基板用ポリエステルフィルム
JP5853567B2 (ja) * 2011-10-11 2016-02-09 日新製鋼株式会社 有機ｅｌ素子用基板及びその製造方法、並びに有機ｅｌ素子
CN105102218B (zh) * 2013-03-28 2017-11-21 株式会社神户制钢所 金属基板、使用其的衬底型薄膜太阳能电池及顶部发光型有机el元件
CN103522658B (zh) * 2013-09-18 2017-02-15 东莞市安派电子有限公司 一种金属穿孔式太阳能电池用背板及其制备方法

Also Published As

Publication number Publication date
KR20180135122A (ko) 2018-12-19
WO2015151773A1 (ja) 2015-10-08
MY181305A (en) 2020-12-21
CN106165112B (zh) 2019-05-10
JP6510760B2 (ja) 2019-05-08
KR20160129870A (ko) 2016-11-09
TW201602411A (zh) 2016-01-16
JP2015195315A (ja) 2015-11-05
CN106165112A (zh) 2016-11-23

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