TWI598464B - Metal substrate - Google Patents
Metal substrate Download PDFInfo
- Publication number
- TWI598464B TWI598464B TW104109762A TW104109762A TWI598464B TW I598464 B TWI598464 B TW I598464B TW 104109762 A TW104109762 A TW 104109762A TW 104109762 A TW104109762 A TW 104109762A TW I598464 B TWI598464 B TW I598464B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- adhesive
- metal substrate
- metal
- metal plate
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 title claims description 140
- 239000002184 metal Substances 0.000 title claims description 140
- 239000000758 substrate Substances 0.000 title claims description 84
- 239000010408 film Substances 0.000 claims description 96
- 239000000853 adhesive Substances 0.000 claims description 69
- 230000001070 adhesive effect Effects 0.000 claims description 67
- 239000010409 thin film Substances 0.000 claims description 25
- 230000003746 surface roughness Effects 0.000 claims description 21
- 239000000049 pigment Substances 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 14
- 229920005992 thermoplastic resin Polymers 0.000 claims description 11
- -1 Polyethylene terephthalate Polymers 0.000 claims description 9
- 238000003475 lamination Methods 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 7
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 3
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 3
- 229920006290 polyethylene naphthalate film Polymers 0.000 claims 1
- 238000000034 method Methods 0.000 description 33
- 239000010410 layer Substances 0.000 description 32
- 238000004519 manufacturing process Methods 0.000 description 27
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 21
- 239000002245 particle Substances 0.000 description 20
- 230000000704 physical effect Effects 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 14
- 238000000576 coating method Methods 0.000 description 13
- 238000011156 evaluation Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 229920002799 BoPET Polymers 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 10
- 239000006185 dispersion Substances 0.000 description 10
- 229920001225 polyester resin Polymers 0.000 description 10
- 239000004645 polyester resin Substances 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 9
- 229910000831 Steel Inorganic materials 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 239000010959 steel Substances 0.000 description 7
- 229920001169 thermoplastic Polymers 0.000 description 7
- 239000004416 thermosoftening plastic Substances 0.000 description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 239000012044 organic layer Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 229920006267 polyester film Polymers 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000001771 vacuum deposition Methods 0.000 description 5
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical class CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 4
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000001023 inorganic pigment Substances 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 239000012860 organic pigment Substances 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical compound OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 241000208340 Araliaceae Species 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 3
- 235000003140 Panax quinquefolius Nutrition 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000013065 commercial product Substances 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 239000002270 dispersing agent Substances 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 235000008434 ginseng Nutrition 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 150000007519 polyprotic acids Polymers 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 2
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- 239000004831 Hot glue Substances 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 2
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- WZJYKHNJTSNBHV-UHFFFAOYSA-N benzo[h]quinoline Chemical compound C1=CN=C2C3=CC=CC=C3C=CC2=C1 WZJYKHNJTSNBHV-UHFFFAOYSA-N 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 238000004040 coloring Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- QSAWQNUELGIYBC-UHFFFAOYSA-N cyclohexane-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCCCC1C(O)=O QSAWQNUELGIYBC-UHFFFAOYSA-N 0.000 description 2
- PFURGBBHAOXLIO-UHFFFAOYSA-N cyclohexane-1,2-diol Chemical compound OC1CCCCC1O PFURGBBHAOXLIO-UHFFFAOYSA-N 0.000 description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 2
- TVIDDXQYHWJXFK-UHFFFAOYSA-N dodecanedioic acid Chemical compound OC(=O)CCCCCCCCCCC(O)=O TVIDDXQYHWJXFK-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 229920005672 polyolefin resin Polymers 0.000 description 2
- 235000013772 propylene glycol Nutrition 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 150000005846 sugar alcohols Polymers 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- DNIAPMSPPWPWGF-VKHMYHEASA-N (+)-propylene glycol Chemical compound C[C@H](O)CO DNIAPMSPPWPWGF-VKHMYHEASA-N 0.000 description 1
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 1
- UWRZIZXBOLBCON-VOTSOKGWSA-N (e)-2-phenylethenamine Chemical class N\C=C\C1=CC=CC=C1 UWRZIZXBOLBCON-VOTSOKGWSA-N 0.000 description 1
- OIXGILBUABDWRY-UHFFFAOYSA-N 1,2,3,4,4a,5,6,7,8,8a-decahydronaphthalene-2,6-diol Chemical compound C1C(O)CCC2CC(O)CCC21 OIXGILBUABDWRY-UHFFFAOYSA-N 0.000 description 1
- NGQSLSMAEVWNPU-YTEMWHBBSA-N 1,2-bis[(e)-2-phenylethenyl]benzene Chemical class C=1C=CC=CC=1/C=C/C1=CC=CC=C1\C=C\C1=CC=CC=C1 NGQSLSMAEVWNPU-YTEMWHBBSA-N 0.000 description 1
- YPFDHNVEDLHUCE-UHFFFAOYSA-N 1,3-propanediol Substances OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 description 1
- KLCLIOISYBHYDZ-UHFFFAOYSA-N 1,4,4-triphenylbuta-1,3-dienylbenzene Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)=CC=C(C=1C=CC=CC=1)C1=CC=CC=C1 KLCLIOISYBHYDZ-UHFFFAOYSA-N 0.000 description 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- GUPMCMZMDAGSPF-UHFFFAOYSA-N 1-phenylbuta-1,3-dienylbenzene Chemical compound C=1C=CC=CC=1[C](C=C[CH2])C1=CC=CC=C1 GUPMCMZMDAGSPF-UHFFFAOYSA-N 0.000 description 1
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- FWLHAQYOFMQTHQ-UHFFFAOYSA-N 2-N-[8-[[8-(4-aminoanilino)-10-phenylphenazin-10-ium-2-yl]amino]-10-phenylphenazin-10-ium-2-yl]-8-N,10-diphenylphenazin-10-ium-2,8-diamine hydroxy-oxido-dioxochromium Chemical compound O[Cr]([O-])(=O)=O.O[Cr]([O-])(=O)=O.O[Cr]([O-])(=O)=O.Nc1ccc(Nc2ccc3nc4ccc(Nc5ccc6nc7ccc(Nc8ccc9nc%10ccc(Nc%11ccccc%11)cc%10[n+](-c%10ccccc%10)c9c8)cc7[n+](-c7ccccc7)c6c5)cc4[n+](-c4ccccc4)c3c2)cc1 FWLHAQYOFMQTHQ-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- MGADZUXDNSDTHW-UHFFFAOYSA-N 2H-pyran Chemical compound C1OC=CC=C1 MGADZUXDNSDTHW-UHFFFAOYSA-N 0.000 description 1
- GOLORTLGFDVFDW-UHFFFAOYSA-N 3-(1h-benzimidazol-2-yl)-7-(diethylamino)chromen-2-one Chemical compound C1=CC=C2NC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 GOLORTLGFDVFDW-UHFFFAOYSA-N 0.000 description 1
- DVIVBQJVHLJFFS-UHFFFAOYSA-N 3-cyclopenta-1,3-dien-1-ylfuran-2,5-dione Chemical compound O=C1OC(=O)C(C=2CC=CC=2)=C1 DVIVBQJVHLJFFS-UHFFFAOYSA-N 0.000 description 1
- OFNISBHGPNMTMS-UHFFFAOYSA-N 3-methylideneoxolane-2,5-dione Chemical compound C=C1CC(=O)OC1=O OFNISBHGPNMTMS-UHFFFAOYSA-N 0.000 description 1
- NEQFBGHQPUXOFH-UHFFFAOYSA-N 4-(4-carboxyphenyl)benzoic acid Chemical compound C1=CC(C(=O)O)=CC=C1C1=CC=C(C(O)=O)C=C1 NEQFBGHQPUXOFH-UHFFFAOYSA-N 0.000 description 1
- MZXNOAWIRQFYDB-UHFFFAOYSA-N 4-(4-hydroxycyclohexyl)cyclohexan-1-ol Chemical compound C1CC(O)CCC1C1CCC(O)CC1 MZXNOAWIRQFYDB-UHFFFAOYSA-N 0.000 description 1
- WEELZNKFYGCZKL-UHFFFAOYSA-N 4-(4-phenylphenyl)-n,n-bis[4-(4-phenylphenyl)phenyl]aniline Chemical compound C1=CC=CC=C1C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)C=2C=CC(=CC=2)C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)C=2C=CC=CC=2)C=C1 WEELZNKFYGCZKL-UHFFFAOYSA-N 0.000 description 1
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- 229910001335 Galvanized steel Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910000799 K alloy Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 239000012327 Ruthenium complex Substances 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 229910007567 Zn-Ni Inorganic materials 0.000 description 1
- 229910007614 Zn—Ni Inorganic materials 0.000 description 1
- BWVAOONFBYYRHY-UHFFFAOYSA-N [4-(hydroxymethyl)phenyl]methanol Chemical compound OCC1=CC=C(CO)C=C1 BWVAOONFBYYRHY-UHFFFAOYSA-N 0.000 description 1
- PRTIWZOVTNONNN-UHFFFAOYSA-N [Bi].[Cr] Chemical compound [Bi].[Cr] PRTIWZOVTNONNN-UHFFFAOYSA-N 0.000 description 1
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 1
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 1
- HZEWFHLRYVTOIW-UHFFFAOYSA-N [Ti].[Ni] Chemical compound [Ti].[Ni] HZEWFHLRYVTOIW-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 229910001508 alkali metal halide Inorganic materials 0.000 description 1
- 150000008045 alkali metal halides Chemical class 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001414 amino alcohols Chemical class 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- SMWDFEZZVXVKRB-UHFFFAOYSA-N anhydrous quinoline Natural products N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 1
- QQHJESKHUUVSIC-UHFFFAOYSA-N antimony lead Chemical compound [Sb].[Pb] QQHJESKHUUVSIC-UHFFFAOYSA-N 0.000 description 1
- CZJCMXPZSYNVLP-UHFFFAOYSA-N antimony zinc Chemical compound [Zn].[Sb] CZJCMXPZSYNVLP-UHFFFAOYSA-N 0.000 description 1
- 125000000751 azo group Chemical group [*]N=N[*] 0.000 description 1
- IRERQBUNZFJFGC-UHFFFAOYSA-L azure blue Chemical compound [Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Al+3].[Al+3].[Al+3].[Al+3].[Al+3].[Al+3].[S-]S[S-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-] IRERQBUNZFJFGC-UHFFFAOYSA-L 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 125000005605 benzo group Chemical group 0.000 description 1
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- 229910052796 boron Inorganic materials 0.000 description 1
- NNBFNNNWANBMTI-UHFFFAOYSA-M brilliant green Chemical compound OS([O-])(=O)=O.C1=CC(N(CC)CC)=CC=C1C(C=1C=CC=CC=1)=C1C=CC(=[N+](CC)CC)C=C1 NNBFNNNWANBMTI-UHFFFAOYSA-M 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
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- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 description 1
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- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical group [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- PMMYEEVYMWASQN-IMJSIDKUSA-N cis-4-Hydroxy-L-proline Chemical compound O[C@@H]1CN[C@H](C(O)=O)C1 PMMYEEVYMWASQN-IMJSIDKUSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
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- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000010960 cold rolled steel Substances 0.000 description 1
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- 238000006482 condensation reaction Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- IFDVQVHZEKPUSC-UHFFFAOYSA-N cyclohex-3-ene-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCC=CC1C(O)=O IFDVQVHZEKPUSC-UHFFFAOYSA-N 0.000 description 1
- RLMGYIOTPQVQJR-UHFFFAOYSA-N cyclohexane-1,3-diol Chemical compound OC1CCCC(O)C1 RLMGYIOTPQVQJR-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 125000005442 diisocyanate group Chemical group 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- RMBPEFMHABBEKP-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2C3=C[CH]C=CC3=CC2=C1 RMBPEFMHABBEKP-UHFFFAOYSA-N 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 239000008397 galvanized steel Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- UCNNJGDEJXIUCC-UHFFFAOYSA-L hydroxy(oxo)iron;iron Chemical compound [Fe].O[Fe]=O.O[Fe]=O UCNNJGDEJXIUCC-UHFFFAOYSA-L 0.000 description 1
- YAMHXTCMCPHKLN-UHFFFAOYSA-N imidazolidin-2-one Chemical compound O=C1NCCN1 YAMHXTCMCPHKLN-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
- MOUPNEIJQCETIW-UHFFFAOYSA-N lead chromate Chemical compound [Pb+2].[O-][Cr]([O-])(=O)=O MOUPNEIJQCETIW-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000001989 lithium alloy Substances 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- KHARCSTZAGNHOT-UHFFFAOYSA-N naphthalene-2,3-dicarboxylic acid Chemical compound C1=CC=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 KHARCSTZAGNHOT-UHFFFAOYSA-N 0.000 description 1
- RXOHFPCZGPKIRD-UHFFFAOYSA-N naphthalene-2,6-dicarboxylic acid Chemical compound C1=C(C(O)=O)C=CC2=CC(C(=O)O)=CC=C21 RXOHFPCZGPKIRD-UHFFFAOYSA-N 0.000 description 1
- WPUMVKJOWWJPRK-UHFFFAOYSA-N naphthalene-2,7-dicarboxylic acid Chemical compound C1=CC(C(O)=O)=CC2=CC(C(=O)O)=CC=C21 WPUMVKJOWWJPRK-UHFFFAOYSA-N 0.000 description 1
- 229910001000 nickel titanium Inorganic materials 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920006289 polycarbonate film Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 229920000166 polytrimethylene carbonate Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- JEXVQSWXXUJEMA-UHFFFAOYSA-N pyrazol-3-one Chemical compound O=C1C=CN=N1 JEXVQSWXXUJEMA-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000001054 red pigment Substances 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229920005792 styrene-acrylic resin Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- UFDHBDMSHIXOKF-UHFFFAOYSA-N tetrahydrophthalic acid Natural products OC(=O)C1=C(C(O)=O)CCCC1 UFDHBDMSHIXOKF-UHFFFAOYSA-N 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- GBRYOJYRBUXELD-UHFFFAOYSA-K tris[(5-phenylquinolin-8-yl)oxy]alumane Chemical compound C=1C=C(C=2C=CC=CC=2)C2=CC=CN=C2C=1O[Al](OC=1C2=NC=CC=C2C(C=2C=CC=CC=2)=CC=1)OC(C1=NC=CC=C11)=CC=C1C1=CC=CC=C1 GBRYOJYRBUXELD-UHFFFAOYSA-K 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 235000013799 ultramarine blue Nutrition 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
- B32B15/09—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising polyesters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/88—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/40—Properties of the layers or laminate having particular optical properties
- B32B2307/402—Coloured
- B32B2307/4026—Coloured within the layer by addition of a colorant, e.g. pigments, dyes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/50—Properties of the layers or laminate having particular mechanical properties
- B32B2307/538—Roughness
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/12—Photovoltaic modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Laminated Bodies (AREA)
- Electroluminescent Light Sources (AREA)
- Photovoltaic Devices (AREA)
Description
本發明係關於次直型薄膜太陽能電池或頂部發光型有機EL元件所使用之金屬基板，使皮膜的表面變為平滑，同時皮膜為具有絕緣性之金屬基板。 The present invention relates to a metal substrate used for a secondary straight type thin film solar cell or a top emission type organic EL element, which makes the surface of the film smooth, and the film is an insulating metal substrate.
作為使用非晶矽、或CdS．CuInSe2等之化合物半導體，亦即薄膜半導體太陽能電池(以下稱為薄膜太陽能電池)，已知有超直型(Super Straight)薄膜太陽能電池與次直型薄膜太陽能電池2種的構造。 As using amorphous germanium, or CdS. A compound semiconductor such as CuInSe 2 , that is, a thin film semiconductor solar cell (hereinafter referred to as a thin film solar cell) is known as a structure of two types of super straight type (Semi Straight) thin film solar cells and secondary straight type thin film solar cells.
於超直型薄膜太陽能電池，通常係依基板、透明電極、光電變換層、背面電極順序層合之構造，從基板側入射光。另外，於次直型薄膜太陽能電池，通常係依基板、背面電極、光電變換層、透明電極順序層合之構造，從透明電極側入射光。 In the ultra-straight-type thin film solar cell, light is normally incident from the substrate side depending on the structure in which the substrate, the transparent electrode, the photoelectric conversion layer, and the back electrode are sequentially laminated. Further, in the secondary straight type thin film solar cell, light is normally incident from the transparent electrode side depending on the structure in which the substrate, the back electrode, the photoelectric conversion layer, and the transparent electrode are laminated in this order.
以往作為薄膜太陽能電池的基板，已使用透光性之玻璃或塑膠等。惟，玻璃除了易破裂之外並有缺乏加工性，重而且成本高等之問題，又，塑膠由於有透濕性，必須設置氣體阻隔層，除了成本變得更貴之外，不加 熱就無法加工故困難。 Conventionally, as a substrate of a thin film solar cell, translucent glass or plastic has been used. However, in addition to being easily broken, glass has the problems of lack of processing, heavy weight and high cost. Moreover, due to the moisture permeability of plastic, it is necessary to provide a gas barrier layer, in addition to the cost becoming more expensive, It is difficult to process heat.
然而，次直型薄膜太陽能電池由於係從透明電極側入射光，次直型薄膜太陽能電池的基板中不要求透光性。因此，可使用並非如玻璃或塑膠之基板，而是雖不具有如金屬板之透光性但加工性優異之基板。惟，為了用作薄膜太陽能電池，雖基板的表面平滑，且此表面為具有絕緣性的必要，但由於金屬板本身的表面通常具有1μm左右以上的凹凸，且有導電性，無法直接作為基板使用。因此，認為若如滿足上述的條件，能形成薄膜於金屬板上，可將金屬板作為基板使用。於以下之專利文獻1或2提案有如此之基板。 However, since the secondary straight type thin film solar cell is incident on the transparent electrode side, light transmittance is not required in the substrate of the secondary straight type thin film solar cell. Therefore, a substrate which is not a substrate such as glass or plastic can be used, but a substrate which does not have translucency such as a metal plate but is excellent in workability can be used. However, in order to use as a thin film solar cell, the surface of the substrate is smooth, and the surface is required to have insulating properties. However, since the surface of the metal plate itself has irregularities of about 1 μm or more and is electrically conductive, it cannot be directly used as a substrate. . Therefore, it is considered that a metal plate can be used as a substrate if a film can be formed on a metal plate if the above conditions are satisfied. Such a substrate is proposed in Patent Document 1 or 2 below.
專利文獻1中，記載有一種金屬板層合用聚酯薄膜，其特徵為薄膜表面的高度400nm以上的突起為150個/mm2以下，薄膜之3次元表面粗糙度為8nm~25nm。惟，於此專利文獻1，將上述薄膜層合於經加熱之金屬板，由於金屬基板並未使用接著劑，故將此金屬基板作為次直型薄膜太陽光發電．有機EL照明使用時，薄膜與金屬板的接著性有不夠充分之虞。 Patent Document 1 describes a polyester film for metal plate lamination, characterized in that the protrusion having a height of 400 nm or more on the surface of the film is 150 pieces/mm 2 or less, and the third-order surface roughness of the film is 8 nm to 25 nm. However, in Patent Document 1, the film is laminated on a heated metal plate, and since the metal substrate does not use an adhesive, the metal substrate is used as a secondary straight film solar power generation. When organic EL illumination is used, the adhesion between the film and the metal plate is insufficient.
專利文獻2中，記載有一種有機電致發光照明基板用聚酯薄膜，其係由基材層、與形成於其至少一側的面之平滑層所構成之薄膜，在平滑層的表面之表面粗糙度Ra為5.0nm以下。惟，於專利文獻2，藉由於基材層之上設置表面為平滑之平滑層，藉由形成複數層之薄膜，而將薄膜表面變為平滑，卻導致產生成本方面的問題。 Patent Document 2 describes a polyester film for an organic electroluminescence illumination substrate which is a film composed of a base layer and a smooth layer formed on at least one side thereof, on the surface of the surface of the smooth layer. The roughness Ra is 5.0 nm or less. However, in Patent Document 2, since a smooth smooth layer is provided on the substrate layer, a film of a plurality of layers is formed to smooth the surface of the film, which causes a problem in cost.
[專利文獻1]日本特開平11-10724號公報 [Patent Document 1] Japanese Patent Laid-Open No. 11-10724
[專利文獻2]日本特開2012-146413號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2012-146413
本發明係次直型薄膜太陽能電池或頂部發光型有機EL元件所使用之金屬基板，以提供一種儘管不必加熱即可加工，且可以低成本製作，但金屬板的表面的平滑性優異，同時絕緣性亦優異之金屬基板為課題。 The present invention is a metal substrate used for a secondary straight type thin film solar cell or a top emission type organic EL element to provide a process which can be processed without being heated, and can be produced at low cost, but the surface of the metal plate is excellent in smoothness while insulating A metal substrate excellent in properties is also a problem.
本發明者等終至完成次直型薄膜太陽能電池或頂部發光型有機EL元件所使用之金屬基板，其係層合於金屬板之皮膜的表面變為平滑，同時皮膜的表面為具有絕緣性之金屬基板。 The inventors of the present invention have completed the metal substrate used for the secondary straight type thin film solar cell or the top emission type organic EL element, and the surface of the film laminated on the metal plate becomes smooth, and the surface of the film is insulating. Metal substrate.
亦即，本發明係一種金屬基板，其特徵為於金屬板的表面透過接著劑層合1層的熱可塑性樹脂薄膜，上述薄膜係由固體顏料之體積分率為20%以下之組成物所得者，膜厚為12μm以上且250μm以下，層合後之上述薄膜表面的表面粗糙度Ra為30nm以下，上述金屬基板係 次直型薄膜太陽能電池或頂部發光型有機EL元件所使用。 That is, the present invention is a metal substrate characterized in that a thermoplastic resin film of one layer is laminated on the surface of a metal plate through an adhesive, and the film is obtained from a composition having a solid pigment having a volume fraction of 20% or less. The film thickness is 12 μm or more and 250 μm or less, and the surface roughness Ra of the surface of the film after lamination is 30 nm or less. A secondary straight type thin film solar cell or a top emission type organic EL element is used.
上述熱可塑性樹脂較佳為聚酯樹脂。 The above thermoplastic resin is preferably a polyester resin.
上述層合後之薄膜表面的表面粗糙度Ra較佳為10nm以下。 The surface roughness Ra of the surface of the film after lamination is preferably 10 nm or less.
有關本發明之金屬基板係藉由層合特定薄膜於金屬板，金屬基板的表面變為平滑，進而成為金屬基板為具有絕緣性者。藉由使用此加工性優異之金屬基板，變成可以低成本得到薄膜太陽能電池或有機EL元件。 In the metal substrate of the present invention, the surface of the metal substrate is smoothed by laminating a specific film on the metal plate, and the metal substrate is insulated. By using such a metal substrate excellent in workability, a thin film solar cell or an organic EL element can be obtained at low cost.
本發明的金屬基板係次直型薄膜太陽能電池或頂部發光型有機EL元件所使用者，其係於金屬板之至少一側的面透過接著劑層合1層的熱可塑性樹脂薄膜者。 In the metal substrate of the present invention, the user of the sub-straight-type thin film solar cell or the top-emission type organic EL device is a thermoplastic resin film which is laminated on one surface of at least one side of the metal plate through the adhesive.
本發明的金屬基板所使用之金屬板為冷軋鋼板、熔融純鋅鍍敷鋼板(GI)、或合金化熔融Zn-Fe鍍敷鋼板(GA)、合金化熔融Zn-5%Al鍍敷鋼板(GF)、電鍍純鋅鋼板(EG)、電鍍Zn-Ni鋼板、鋁板、鈦板、鍍鋁鋅(Galvalume)鋼板等，雖然較佳為無鉻酸鹽者，但亦可使用鉻酸鹽處理或者無處理者。金屬板的厚度雖並未特別 限定，但可適合使用0.3~2.5mm左右者。 The metal plate used in the metal substrate of the present invention is a cold rolled steel plate, a molten pure zinc plated steel sheet (GI), or an alloyed molten Zn-Fe plated steel sheet (GA), and an alloyed molten Zn-5% Al plated steel sheet. (GF), electroplated pure zinc steel plate (EG), electroplated Zn-Ni steel plate, aluminum plate, titanium plate, galvanized steel plate, etc., although preferably chromate-free, chromate treatment Or no processor. The thickness of the metal plate is not special Limited, but suitable for use around 0.3~2.5mm.
本發明所使用之接著劑中含有樹脂。樹脂雖並未特別限定，但可列舉聚烯烴樹脂、聚酯樹脂、聚苯乙烯樹脂、聚胺基甲酸乙酯樹脂等，較佳為聚烯烴樹脂或聚酯樹脂。接著劑形成用組成物中之固體含量較佳為15~35質量%，更佳為20~30質量%。 The adhesive used in the present invention contains a resin. The resin is not particularly limited, and examples thereof include a polyolefin resin, a polyester resin, a polystyrene resin, and a polyurethane resin, and a polyolefin resin or a polyester resin is preferable. The solid content in the composition for forming a subsequent agent is preferably from 15 to 35% by mass, more preferably from 20 to 30% by mass.
聚酯樹脂係藉由二元酸等之多元酸與多元醇類的縮合反應所得到者。 The polyester resin is obtained by a condensation reaction of a polybasic acid such as a dibasic acid with a polyhydric alcohol.
作為聚酯樹脂之原料所使用之多元酸，例如雖可列舉馬來酸、馬來酸酐、富馬酸、衣康酸、衣康酸酐等之α,β-不飽和二元酸；苯二甲酸、苯二甲酸酐、鹵化苯二甲酸酐、異苯二甲酸、對苯二甲酸、四氫苯二甲酸、四氫苯二甲酸酐、六氫苯二甲酸、六氫異苯二甲酸、六氫對苯二甲酸、環戊二烯-馬來酸酐加成物、丁二酸、丙二酸、戊二酸、己二酸、癸二酸、1,10-癸烷二羧酸、2,6-萘二羧酸、2,7-萘二羧酸、2,3-萘二羧酸、2,3-萘二羧酸酐、4,4’-聯苯基二羧酸、及、此等之二烷基酯等之飽和二元酸等，但並未特別限定。多元酸可僅一種使用，適當的話亦可混合二種以上使用。 Examples of the polybasic acid used as a raw material of the polyester resin include α,β-unsaturated dibasic acids such as maleic acid, maleic anhydride, fumaric acid, itaconic acid, and itaconic anhydride; and phthalic acid; , phthalic anhydride, halogenated phthalic anhydride, isophthalic acid, terephthalic acid, tetrahydrophthalic acid, tetrahydrophthalic anhydride, hexahydrophthalic acid, hexahydrophthalic acid, hexahydrogen Terephthalic acid, cyclopentadiene-maleic anhydride adduct, succinic acid, malonic acid, glutaric acid, adipic acid, sebacic acid, 1,10-decane dicarboxylic acid, 2,6 -naphthalene dicarboxylic acid, 2,7-naphthalene dicarboxylic acid, 2,3-naphthalene dicarboxylic acid, 2,3-naphthalene dicarboxylic anhydride, 4,4'-biphenyldicarboxylic acid, and the like A saturated dibasic acid or the like such as a dialkyl ester is not particularly limited. The polybasic acid may be used alone or in combination of two or more kinds as appropriate.
作為聚酯樹脂的原料所使用之多元醇類，例如雖可列舉乙二醇、二乙二醇、聚乙二醇等之乙二醇類、丙二醇、二丙二醇、聚丙二醇等之丙二醇類、2-甲基-1,3- 丙二醇、1,3-丁二醇、雙酚A與環氧丙烷或環氧乙烷的加成物、甘油、三羥甲基丙烷、1,3-丙二醇、1,2-環己烷二醇、1,3-環己烷二醇、1,4-環己烷二醇、對二甲苯二醇、雙環己基-4,4’-二醇、2,6-十氫萘二醇、參(2-羥乙基)異氰脲酸酯等，並未特別限定。又，可使用乙醇胺等之胺基醇類。此等多元醇類可僅使用一種，適當的話亦可混合二種以上。又，視必要亦可進行藉由環氧樹脂、二異氰酸酯、二環戊二烯等之改質。 Examples of the polyhydric alcohol used as a raw material of the polyester resin include glycols such as ethylene glycol, diethylene glycol, and polyethylene glycol; propylene glycols such as propylene glycol, dipropylene glycol, and polypropylene glycol; -methyl-1,3- Propylene glycol, 1,3-butanediol, adduct of bisphenol A with propylene oxide or ethylene oxide, glycerin, trimethylolpropane, 1,3-propanediol, 1,2-cyclohexanediol , 1,3-cyclohexanediol, 1,4-cyclohexanediol, p-xylene glycol, dicyclohexyl-4,4'-diol, 2,6-decahydronaphthalenediol, ginseng 2-hydroxyethyl) isocyanurate or the like is not particularly limited. Further, an amino alcohol such as ethanolamine can be used. These polyols may be used alone or in combination of two or more. Further, modification by epoxy resin, diisocyanate, dicyclopentadiene or the like may be carried out as necessary.
作為於本發明所使用之接著劑，可適當使用各種市售品。尤其是作為接著劑的市售品，例如可列舉熱可塑性聚酯系熱熔膠接著劑即東亞合成公司製Aron melt(註冊商標)PES系列、將改質烯烴作為主成分之熱熔膠接著劑即東亞合成公司製Aron melt(註冊商標)PPET系列、東亞合成公司製Aron Mighty(註冊商標)FS-175SV10、東亞合成公司製Aron Mighty(註冊商標)AS-60等。 As the adhesive used in the present invention, various commercially available products can be suitably used. In particular, as a commercial product of the adhesive, for example, Aron melt (registered trademark) PES series manufactured by Toagosei Co., Ltd., which is a thermoplastic polyester-based hot melt adhesive, and hot melt adhesive as a main component of modified olefins, Aron melt (registered trademark) PPET series manufactured by Toagosei Co., Ltd., Aron Mighty (registered trademark) FS-175SV10 manufactured by Toagosei Co., Ltd., Aron Mighty (registered trademark) AS-60 manufactured by Toagosei Co., Ltd., and the like.
將上述市售品作為接著劑使用時，將此等之市售品以甲基乙基酮、甲基異丁基酮、甲苯、二甲苯等之稀釋劑稀釋者塗佈於金屬板。 When the commercially available product is used as an adhesive, the commercially available product is applied to a metal plate by diluting with a diluent such as methyl ethyl ketone, methyl isobutyl ketone, toluene or xylene.
作為於本發明所使用之熱可塑性樹脂薄膜，雖並未特別限定，但可列舉聚酯薄膜、聚乙烯薄膜、聚丙烯薄膜、聚苯乙烯薄膜、聚乙烯醇系薄膜、聚氯乙烯薄膜、聚偏二 氯乙烯薄膜、氟樹脂薄膜、纖維素系薄膜、聚碳酸脂薄膜、聚醯胺薄膜等。此等當中可適合使用者為聚酯薄膜，更佳為聚對苯二甲酸乙二酯(PET)薄膜或聚萘二甲酸乙二酯(PEN)薄膜，再更佳為PEN薄膜。聚酯薄膜製作所使用之聚酯樹脂可用與上述之接著劑所使用之聚酯樹脂的製法相同的製法來製造。 The thermoplastic resin film used in the present invention is not particularly limited, and examples thereof include a polyester film, a polyethylene film, a polypropylene film, a polystyrene film, a polyvinyl alcohol film, a polyvinyl chloride film, and a poly Bias A vinyl chloride film, a fluororesin film, a cellulose film, a polycarbonate film, a polyamide film or the like. Among these, the polyester film may be suitable for the user, more preferably a polyethylene terephthalate (PET) film or a polyethylene naphthalate (PEN) film, and even more preferably a PEN film. The polyester resin used for the production of the polyester film can be produced by the same method as the method for producing the polyester resin used in the above-mentioned adhesive.
於本發明所使用之熱可塑性樹脂薄膜較佳係薄膜單體(於接著於金屬板前的狀態的薄膜)的表面粗糙度Ra為30nm以下，更佳為薄膜單體的表面粗糙度Ra為10nm以下。使用薄膜單體的表面粗糙度Ra超過30nm之薄膜製造金屬基板時，金屬基板的表面粗糙度Ra變過大，在接著薄膜於金屬基板狀態之薄膜表面的凹凸變成原因，恐有因電極間的短路招致發生故障之虞。 The thermoplastic resin film used in the present invention preferably has a surface roughness Ra of a film monomer (a film in a state immediately before the metal plate) of 30 nm or less, more preferably a film monomer having a surface roughness Ra of 10 nm or less. . When a metal substrate is produced using a film having a surface roughness Ra of the film monomer of more than 30 nm, the surface roughness Ra of the metal substrate is excessively large, and the unevenness of the film surface on the film in the state of the film on the metal substrate becomes a cause, which may cause a short circuit between the electrodes. Incurs a fault.
作為於本發明所使用之熱可塑性樹脂薄膜，可適合使用各種之市售品。尤其是作為聚酯樹脂之市售品，例如可列舉Unitika公司製Emblet(註冊商標)P652、帝人杜邦薄膜公司製Teonex(註冊商標)Q65FA等。 As the thermoplastic resin film used in the present invention, various commercially available products can be suitably used. In particular, as a commercial product of the polyester resin, for example, Embel (registered trademark) P652 manufactured by Unitika Co., Ltd., Teonex (registered trademark) Q65FA manufactured by Teijin DuPont Film Co., Ltd., and the like can be cited.
經層合之熱可塑性樹脂薄膜的膜厚為12μm以上且250μm以下。膜厚未達12μm時，恐有於熱可塑性樹脂薄膜存在缺陷部分之虞，而導致金屬基板的耐電壓未達0.1kV，恐有無法確保耐電壓(絕緣耐性)之虞。又，膜厚超過250μm時，將金屬基板進行切斷加工時，變成易發生薄膜的切斷，恐有金屬基板之製造線的生產效率降低 之虞。 The film thickness of the laminated thermoplastic resin film is 12 μm or more and 250 μm or less. When the film thickness is less than 12 μm, there is a fear that the thermoplastic resin film has a defective portion, and the withstand voltage of the metal substrate is less than 0.1 kV, which may fail to ensure the withstand voltage (insulation resistance). In addition, when the thickness of the metal substrate exceeds 250 μm, when the metal substrate is cut, the film is likely to be cut, and the production efficiency of the metal substrate is lowered. After that.
於本發明的金屬基板，必須薄膜表面為平滑。具體而言，與金屬基板接著之薄膜(層合後之薄膜)的表面粗糙度Ra為30nm以下，較佳為與金屬基板接著之薄膜的表面粗糙度Ra為10nm以下。與金屬基板接著之薄膜的表面粗糙度Ra超過30nm時，薄膜表面的凹凸變成原因，恐有因電極間的短路招致發生故障之虞。尚，對於藉由附著塵或垃圾等之粒子所產生之表面的凹凸，由於塵或垃圾等之粒子遠較30nm左右更大，可藉由研磨等之平滑化輕易去除。因此，因塵或垃圾等之粒子導致之凹凸，與導致發生故障之虞極為低。對於與金屬基板接著之薄膜的表面粗糙度Ra，可藉由後述之測定方法測定。 In the metal substrate of the present invention, the surface of the film must be smooth. Specifically, the surface roughness Ra of the film (the film after lamination) which follows the metal substrate is 30 nm or less, and it is preferable that the film roughness Ra of the film which follows the metal substrate is 10 nm or less. When the surface roughness Ra of the film next to the metal substrate exceeds 30 nm, the unevenness on the surface of the film becomes a cause, and there is a fear that a failure occurs due to a short circuit between the electrodes. In addition, as for the unevenness of the surface generated by particles such as dust or garbage, the particles such as dust or garbage are much larger than about 30 nm, and can be easily removed by smoothing by polishing or the like. Therefore, the unevenness caused by particles such as dust or garbage is extremely low and the failure is caused. The surface roughness Ra of the film which is next to the metal substrate can be measured by a measuring method described later.
將薄膜表面變為平滑，具體而言，為了將薄膜表面的表面粗糙度Ra定為30nm以下，較佳為薄膜中未含有固體顏料。惟，必須使用著色薄膜時，較佳為將薄膜形成用組成物中之固體顏料的體積分率定為20%以下。由於固體顏料的粒徑通常較30nm更大，薄膜形成用組成物中之固體顏料的體積分率超過20%時，將薄膜表面的表面粗糙度Ra定為30nm以下變困難。 The surface of the film is made smooth. Specifically, in order to set the surface roughness Ra of the surface of the film to 30 nm or less, it is preferred that the film does not contain a solid pigment. When it is necessary to use a colored film, it is preferred to set the volume fraction of the solid pigment in the film-forming composition to 20% or less. When the particle diameter of the solid pigment is usually larger than 30 nm, and the volume fraction of the solid pigment in the film-forming composition exceeds 20%, it is difficult to set the surface roughness Ra of the surface of the film to 30 nm or less.
作為用以著色於下述各種顏色之顏料種類之 例，可列舉白色：氧化鈦、碳酸鈣、氧化鋅、硫酸鋇、鋅鋇白、鉛白等之無機系顏料、黑色：苯胺黑(Aniline black)、苯胺黑(Nigrosine)等之有機系顏料、碳黑、鐵黑等之無機系顏料、紅色：不溶性偶氮系(萘酚系及苯胺化物系)或溶性偶氮系等之有機系顏料、或鐵丹、鎘紅、紅丹等之無機系顏料、黃色：不溶性偶氮系(萘酚系及苯胺化物系)、溶性偶氮系、喹吖啶酮系等之有機系顏料、或鉻黃、鎘黃、鎳鈦黃、黃丹、鍶鉻酸鹽等之無機系顏料、綠色：有機酞菁系顏料、青色：有機酞菁系顏料、雙噁嗪系顏料、鐵藍、群青、鈷藍、翡翠綠等之無機系顏料、橙色：苯并咪唑酮系、吡唑啉酮系等之有機系顏料等。上述著色顏料當中，即使同顏色為化學構造不同者、或者藉由將不同顏色之著色顏料以2種以上適當之摻合比混合，可著色成灰色、茶色、紫色、紅紫色、青紫色、橙色、黃金色等所期望之顏色。 As a pigment type for coloring in various colors described below Examples include white: inorganic pigments such as titanium oxide, calcium carbonate, zinc oxide, barium sulfate, zinc antimony white, and lead white, and organic pigments such as black: Aniline black and Nigrosine; Inorganic pigments such as carbon black and iron black, red: organic pigments such as insoluble azo (naphthol and aniline) or soluble azo, or inorganics such as iron, cadmium, and red Pigment, yellow: organic pigments such as insoluble azo (naphthol and aniline), soluble azo or quinacridone, or chrome yellow, cadmium yellow, nickel titanium yellow, yellow dan, bismuth chromium Inorganic pigments such as acid salts, green: organic phthalocyanine pigments, cyan: organic phthalocyanine pigments, bisoxazine pigments, iron blue, ultramarine blue, cobalt blue, emerald green, etc., inorganic pigments, orange: benzo An organic pigment such as an imidazolidone or a pyrazolone. Among the above-mentioned colored pigments, even if the same color is different in chemical structure, or by mixing different color pigments in two or more appropriate blend ratios, it can be colored into gray, brown, purple, reddish purple, cyan, and orange. The desired color, such as gold color.
例如，氧化鈦中，推薦平均粒徑例如為粒狀時大概為0.1~0.5μm，較佳為0.2μm以上、0.4μm以下，更佳為0.2μm以上、0.3μm以下。平均粒徑超過0.5μm時，將由包含氧化鈦之薄膜形成用組成物所形成之薄膜表面的表面粗糙度Ra定為30nm以下變為困難。 For example, in the titanium oxide, the recommended average particle diameter is, for example, 0.1 to 0.5 μm, preferably 0.2 μm or more and 0.4 μm or less, and more preferably 0.2 μm or more and 0.3 μm or less. When the average particle diameter is more than 0.5 μm, it is difficult to set the surface roughness Ra of the surface of the film formed of the composition for forming a film containing titanium oxide to 30 nm or less.
於此，上述氧化鈦之平均粒徑係意指藉由一般粒度分布計測定分級後之氧化鈦粒子的粒度分布，從根據該測定結果所算出之小粒徑側之積算值50%的粒度(D50)。該粒度分布可藉由讓粒子照到光所產生之繞射 或散射的強度圖型來測定，作為如此之粒度分布計，例如例示有日機裝公司製之Micro track 9220FRA或Micro track HRA等。 Here, the average particle diameter of the titanium oxide means a particle size distribution of the titanium oxide particles after classification by a general particle size distribution meter, and a particle size of 50% from the integrated value of the small particle diameter side calculated based on the measurement result ( D50). The particle size distribution can be diffracted by letting the particles shine onto the light For example, a Micro track 9220 FRA or a Micro track HRA manufactured by Nikkiso Co., Ltd. is used as the particle size distribution meter.
尚，滿足上述較佳平均粒徑之氧化鈦，可作為市售品使用，例如可列舉Tayca公司製之TITANIX(註冊商標)JR-301(平均粒徑0.30μm)、JR-603(平均粒徑0.28μm)、JR-806(平均粒徑0.25μm)、JRNC(平均粒徑0.37μm)等。 In addition, titanium oxide which satisfies the above-mentioned preferred average particle diameter can be used as a commercial product, and examples thereof include TITANIX (registered trademark) JR-301 (average particle diameter 0.30 μm) manufactured by Tayca Co., Ltd., and JR-603 (average particle diameter). 0.28 μm), JR-806 (average particle diameter: 0.25 μm), JRNC (average particle diameter: 0.37 μm), and the like.
尚，為了抑制顏料的偏析，可於薄膜形成用組成物添加顏料分散劑。適合之顏料分散劑係選自由水溶性丙烯酸樹脂、水溶性苯乙烯丙烯酸樹脂及非離子系界面活性劑所構成之群組中之1種以上。使用此等時，變成殘存顏料分散劑於著色塗膜。 Further, in order to suppress segregation of the pigment, a pigment dispersant may be added to the composition for forming a film. A suitable pigment dispersant is one or more selected from the group consisting of water-soluble acrylic resins, water-soluble styrene acrylic resins, and nonionic surfactants. When this is used, it becomes a residual pigment dispersing agent in a coloring coating film.
耐電壓係已由後述之方法測定，較佳為0.1kV以上。更佳為0.3kV以上，再更佳為1.0kV以上。耐電壓未達0.1kV時，恐有因電極間的短路招致發生故障之虞。 The withstand voltage system is measured by a method described later, and is preferably 0.1 kV or more. More preferably, it is 0.3 kV or more, and even more preferably 1.0 kV or more. When the withstand voltage is less than 0.1kV, there is a fear of failure due to a short circuit between the electrodes.
塗佈接著劑於金屬板上，然後進行燒附，再藉由接著薄膜於接著劑之上，可製得有關本發明之金屬基板。 The metal substrate relating to the present invention can be obtained by coating an adhesive on a metal plate and then baking it, and then attaching the film to the adhesive.
對金屬板上之接著劑的塗佈並未特別限制，可適當採用既知之方法。作為組成物之塗佈方法，例如可 列舉棒塗佈機法、輥塗機法、簾式流塗機法、噴霧法、噴霧環(Spray Ringer)法等，此等當中，從成本等之觀點來看，較佳為棒塗佈機法、輥塗機法、噴霧環法。 The application of the adhesive to the metal plate is not particularly limited, and a known method can be suitably employed. As a coating method of the composition, for example, The bar coater method, the roll coater method, the curtain flow coater method, the spray method, the spray ring method, etc. are mentioned, and among these, a bar coater is preferable from a viewpoint of cost, etc. Method, roll coater method, spray ring method.
塗佈接著劑後，再進行燒附。作為接著劑的燒附溫度，例如較佳為80℃以上且200℃以下，更佳為100℃以上且180℃以下。由此燒附，製得塗裝接著劑於金屬板上之接著劑塗裝金屬板。尚，燒附溫度為到達板溫(Peak Metal Temperature：PMT)。 After the application of the adhesive, the baking is carried out. The baking temperature of the adhesive is, for example, preferably 80° C. or higher and 200° C. or lower, and more preferably 100° C. or higher and 180° C. or lower. By this, it was baked, and the adhesive agent was applied to the metal plate on the metal plate. Still, the burnt temperature is the Peak Metal Temperature (PMT).
其次，將薄膜接著於接著劑塗裝金屬板之接著劑塗佈面上。作為對接著劑塗裝金屬板之薄膜的接著方法，並未特別限制，雖可適當採用既知之方法，但較佳為加壓接著法。加壓接著法雖為以呈特定時間、特定溫度狀態加壓於特定壓力以進行接著之方法，但加壓接著法較佳為於80℃以上且200℃以下進行，更佳為100℃以上且180℃以下。又，加壓接著法較佳為於5分鐘以下進行，更佳為3分鐘以下。加壓接著法較佳為於0.5kgf/cm2以上且100kgf/cm2以下的壓力進行，更佳為1kgf/cm2以上且50kgf/cm2以下。 Next, the film is applied to the adhesive-coated side of the metal plate after the adhesive is applied. The method for attaching the film of the metal plate to the adhesive is not particularly limited, and a known method can be suitably employed, but a press-bonding method is preferred. The press-following method is a method in which the pressure is applied to a specific pressure at a specific temperature for a specific period of time, but the press-following method is preferably carried out at 80 ° C or higher and 200 ° C or lower, more preferably 100 ° C or higher. Below 180 °C. Further, the press-bonding method is preferably carried out for 5 minutes or less, more preferably 3 minutes or shorter. The press-fitting method is preferably carried out at a pressure of 0.5 kgf/cm 2 or more and 100 kgf/cm 2 or less, more preferably 1 kgf/cm 2 or more and 50 kgf/cm 2 or less.
對於具備有關本發明之金屬基板的次直型薄膜太陽能電池進行說明。次直型太陽能電池若為具備有關本發明之金屬基板者，可為公知之任一種構造，例如基本上於有關本發明之金屬基板的薄膜上，以背面電極、光電變換層、 透明電極的順序層合之構造。光電變換層係通過透明電極吸收經到達之光而產生電流之層，背面電極及透明電極皆為用以取出以光電變換層所產生之電流者，皆由導電性材料所構成。光入射側之透明電極必須具有透光性。對於背面電極、光電變換層、透明電極，可使用與公知之次直型薄膜太陽能電池相同的材料。 A secondary straight type thin film solar cell including the metal substrate of the present invention will be described. The secondary straight type solar cell may be any one of known structures if it is a metal substrate according to the present invention. For example, it is basically a film on a metal substrate according to the present invention, a back electrode, a photoelectric conversion layer, The sequential lamination configuration of the transparent electrodes. The photoelectric conversion layer is a layer that generates a current by passing the light that has passed through the transparent electrode, and both the back electrode and the transparent electrode are formed by a conductive material for taking out a current generated by the photoelectric conversion layer. The transparent electrode on the light incident side must have light transmissivity. For the back electrode, the photoelectric conversion layer, and the transparent electrode, the same material as that of the known secondary straight type thin film solar cell can be used.
背面電極為未被特別限制者，例如可使用Mo、Cr、W等之金屬、及組合此等之金屬者。背面電極可為單層構造，亦可為2層構造等之層合構造。背面電極的厚度雖並未被特別限制，但厚度較佳為0.1μm以上，更佳為0.45~1.0μm。 The back electrode is not particularly limited, and for example, a metal such as Mo, Cr, W, or the like may be used. The back electrode may have a single layer structure or a laminate structure of a two-layer structure or the like. Although the thickness of the back electrode is not particularly limited, the thickness is preferably 0.1 μm or more, and more preferably 0.45 to 1.0 μm.
光電變換層的構成並未被特別限制，例如為至少1種黃銅礦構造之化合物半導體。又，光電變換層可為由Ib族元素與IIIb族元素與VIb族元素所構成之至少1種化合物半導體。 The configuration of the photoelectric conversion layer is not particularly limited, and is, for example, a compound semiconductor of at least one chalcopyrite structure. Further, the photoelectric conversion layer may be at least one compound semiconductor composed of a group Ib element, a group IIIb element, and a group VIb element.
進而由於得到光吸收率高、且高光電變換效率，光電變換層較佳為由選自由Cu及Ag所構成之群組中之1種Ib族元素、與選自由Al、Ga及In所構成之群組中之1種IIIb族元素、與選自由S、Se、及Te所構成之群組中之1種VIb族元素所構成之至少1種化合物半導體。作為此化合物半導體，可列舉CuAlS2、CuGaS2、CuInS2、CuAlSe2、CuGaSe2、CuInSe2(CIS)、AgAlS2、AgGaS2、AgInS2、AgAlSe2、AgGaSe2、AgInSe2、AgAlTe2、AgGaTe2、AgInTe2、Cu(In1-xGax)Se2(CIGS)、 Cu(In1-xAlx)Se2、Cu(In1-xGax)(S、Se)2、Ag(In1-xGax)Se2、及Ag(In1-xGax)(S、Se)2等。 Further, since the light absorption rate is high and the photoelectric conversion efficiency is high, the photoelectric conversion layer is preferably one element selected from the group consisting of Cu and Ag, and one selected from the group consisting of Al, Ga, and In. At least one compound semiconductor composed of one group IIIb element in the group and one group VIb element selected from the group consisting of S, Se, and Te. Examples of the compound semiconductor include CuAlS 2 , CuGaS 2 , CuInS 2 , CuAlSe 2 , CuGaSe 2 , CuInSe 2 (CIS), AgAlS 2 , AgGaS 2 , AgInS 2 , AgAlSe 2 , AgGaSe 2 , AgInSe 2 , AgAlTe 2 , AgGaTe. 2 , AgInTe 2 , Cu(In 1-x Gax)Se 2 (CIGS), Cu(In 1-x Al x )Se 2 , Cu(In 1-x Ga x )(S, Se) 2 , Ag(In 1-x Ga x )Se 2 and Ag(In 1-x Ga x )(S,Se) 2 and the like.
透明電極例如藉由添加Al、B、Ga、Sb等之ZnO、ITO(銦-錫氧化物)、或SnO2及組合此等所構成。透明電極可為單層構造，亦可為2層構造等之層合構造。又，透明電極的厚度雖並未被特別限制，但較佳為0.3~1μm。 The transparent electrode is formed by, for example, adding ZnO such as Al, B, Ga, or Sb, ITO (indium-tin oxide), or SnO 2 , or a combination thereof. The transparent electrode may have a single layer structure or a laminated structure of a two-layer structure or the like. Further, although the thickness of the transparent electrode is not particularly limited, it is preferably 0.3 to 1 μm.
次直型薄膜太陽能電池可用公知之方法製得，例如可用以下之製造方法製得次直型薄膜太陽能電池。首先，於有關本發明之金屬基板之上，由濺鍍法、真空蒸鍍法、熱CVD法、濕式塗佈法等自以往所知之方法形成背面電極。其次，於背面電極之上由濺鍍法、真空蒸鍍法、熱CVD法、濕式塗佈法等自以往所知之方法形成光電變換層。接著，於光電變換層之上由濺鍍法、真空蒸鍍法、熱CVD法、濕式塗佈法等自以往所知之方法形成透明電極。 The secondary straight type thin film solar cell can be obtained by a known method, and for example, a secondary straight type thin film solar cell can be obtained by the following production method. First, a back surface electrode is formed on a metal substrate according to the present invention by a sputtering method, a vacuum deposition method, a thermal CVD method, a wet coating method, or the like. Next, a photoelectric conversion layer is formed on the back electrode by a conventional method such as a sputtering method, a vacuum deposition method, a thermal CVD method, or a wet coating method. Next, a transparent electrode is formed on the photoelectric conversion layer by a conventional method such as a sputtering method, a vacuum deposition method, a thermal CVD method, or a wet coating method.
尚，透明電極之形成時為了保護光電變換層，可於光電變換層與透明電極之間設置緩衝層。又，可於透明電極之上設置密封材料。 Further, in order to protect the photoelectric conversion layer when the transparent electrode is formed, a buffer layer may be provided between the photoelectric conversion layer and the transparent electrode. Further, a sealing material may be provided on the transparent electrode.
有關本發明之金屬基板亦可適用於頂部發光型有機EL元件。如此之頂部發光型有機EL元件若為具備有關本發明之金屬基板者，可為公知之任一種構造，例如基本上 於有關本發明之金屬基板的薄膜上，係以電極、有機層、透明導電膜的順序層合者。對於電極、有機層、透明導電膜，可使用與公知之頂部發光型薄膜太陽能電池相同之材料。於頂部發光型有機EL元件，由於光係透過透明導電性膜取出(並非透過基板)，作為基板可使用並非透明之金屬板。 The metal substrate of the present invention can also be applied to a top emission type organic EL element. Such a top emission type organic EL element may be any known structure if it is a metal substrate according to the present invention, for example, basically On the film of the metal substrate of the present invention, an electrode, an organic layer, and a transparent conductive film are laminated in this order. For the electrode, the organic layer, and the transparent conductive film, the same material as the known top emission type thin film solar cell can be used. In the top emission type organic EL device, since the light is transmitted through the transparent conductive film (not through the substrate), a metal plate that is not transparent can be used as the substrate.
電極例如係銦-錫氧化物(ITO)、銦-鋅氧化物(IZO)、錫氧化物、Au等金屬之極薄膜、導電性高分子、導電性之有機材料、含有摻雜劑(供體或受體)之有機層、導電體與導電性有機材料(包含高分子)之混合物、或此等之層合體等作為材料使用。電極可將此等材料使用濺鍍法或離子鍍法等之氣相成長法成膜。 The electrode is, for example, a thin film of a metal such as indium-tin oxide (ITO), indium-zinc oxide (IZO), tin oxide, or Au, a conductive polymer, a conductive organic material, or a dopant (donor) The organic layer of the or acceptor), the mixture of the conductor and the conductive organic material (including the polymer), or a laminate thereof, or the like is used as the material. The electrode can be formed into a film by a vapor phase growth method such as sputtering or ion plating.
有機層之有機發光層，例如係將蒽、萘、芘、稠四苯、蔻、苝、酞苝(Phthaloperylene)、萘苝(Naphthaloperylene)、二苯基丁二烯、四苯基丁二烯、香豆素、惡二唑、雙苯並噁唑啉、雙苯乙烯基、環戊二烯、喹啉金屬錯合物、參(8-羥喹啉根(Hydroxyquinolinate))鋁錯合物、參(4-甲基-8-喹啉根)鋁錯合物、參(5-苯基-8-喹啉根)鋁錯合物、胺基喹啉金屬錯合物、苯并喹啉金屬錯合物、三-(p-三聯苯-4-基)胺、吡喃、喹吖啶酮、紅熒烯、及此等之衍生物、或者1-芳基-2,5-二(2-噻吩基)吡咯衍生物、二苯乙烯基苯衍生物、苯乙烯基亞芳基衍生物、苯乙烯基胺衍生物、及於分子之一部分具有由此等之發光性化合物所構成之基之 化合物或者高分子等來作為材料使用。進而不僅使用來自上述化合物所代表之螢光色素的化合物，亦即燐光發光材料例如亦使用Ir錯合物、Os錯合物、Pt錯合物、銪錯合物等之發光材料、或是於分子內具有該等之化合物或高分子。有機層可藉由濺鍍法、真空蒸鍍法等自以往所知之方法形成。尚，有機層除了有機發光層之外，亦可包含電洞注入層、電洞傳遞層、電子輸送層、電子注入層等。 The organic light-emitting layer of the organic layer is, for example, ruthenium, naphthalene, anthracene, fused tetraphenyl, anthracene, fluorene, Phthaloperylene, naphthaloperylene, diphenylbutadiene, tetraphenylbutadiene, Coumarin, oxadiazole, bisbenzoxazoline, bisstyryl, cyclopentadiene, quinoline metal complex, hexahydroquinolinate aluminum complex, ginseng (4-methyl-8-quinolinyl) aluminum complex, ginseng (5-phenyl-8-quinolinolate) aluminum complex, aminoquinoline metal complex, benzoquinoline metal , tris-(p-terphenyl-4-yl)amine, pyran, quinacridone, rubrene, and derivatives thereof, or 1-aryl-2,5-di(2- a thienyl)pyrrole derivative, a distyrylbenzene derivative, a styrylarylene derivative, a styrylamine derivative, and a group having a luminescent compound such as a part of a molecule A compound or a polymer is used as a material. Further, not only a compound derived from a fluorescent dye represented by the above compound but also a luminescent material such as an Ir complex, an Os complex, a Pt complex or a ruthenium complex, or a luminescent material, or These compounds or polymers are present in the molecule. The organic layer can be formed by a conventional method such as a sputtering method or a vacuum deposition method. In addition to the organic light-emitting layer, the organic layer may include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and the like.
透明導電膜係組合Al或銀等之單體、或Al或銀等與其他電極材料，以構成層合構造者來作為材料使用。電極材料的組合，可列舉鹼金屬與Al之層合體、鹼金屬與銀之層合體、鹼金屬之鹵化物與Al之層合體、鹼金屬之氧化物與Al之層合體、鹼土類金屬或稀土類金屬與Al之層合體、此等之金屬種與其他金屬之合金等。具體而言，例如可列舉鈉、鈉-鉀合金、鋰、鎂等與Al之層合體、鎂-銀混合物、鎂-銦混合物、鋁-鋰合金、LiF與Al之混合物、Al與Al2O3之混合物等。透明導電膜可藉由濺鍍法、真空蒸鍍法等自以往所知之方法形成。 The transparent conductive film is a combination of a monomer such as Al or silver, or Al or silver, and the like, and is used as a material to form a laminate structure. Examples of the combination of the electrode materials include a laminate of an alkali metal and Al, a laminate of an alkali metal and silver, a laminate of an alkali metal halide and Al, a laminate of an alkali metal oxide and Al, an alkaline earth metal or a rare earth. A laminate of a metal-like layer and Al, an alloy of such a metal species with other metals, and the like. Specific examples thereof include sodium, a sodium-potassium alloy, a laminate of Al such as lithium and magnesium, a magnesium-silver mixture, a magnesium-indium mixture, an aluminum-lithium alloy, a mixture of LiF and Al, and Al and Al 2 O. a mixture of 3 , etc. The transparent conductive film can be formed by a conventional method such as a sputtering method or a vacuum deposition method.
本案係根據2014年3月31日所申請之日本國專利申請第2014-073359號而主張優先權之利益者。2014年3月31日所申請之日本國專利申請第2014-073359號說明書之全部內容為了參考而援用於本案。 The present application claims priority from Japanese Patent Application No. 2014-073359, filed on March 31, 2014. The entire contents of the specification of Japanese Patent Application No. 2014-073359, filed on March 31, 2014, are incorporated herein by reference.
以下雖列舉實施例更具體說明本發明，但本發明並非被限定於下述實施例者，亦可於可適合前、後述之趣旨之範圍進行適當變更來實施，該等任一種皆包含在本發明的技術的範圍。又，於實施例所使用之評價方法係如以下所述。 The present invention will be more specifically described by the following examples, but the present invention is not limited to the following examples, and may be appropriately modified and implemented in the scope of the present invention, and any of them are included in the present invention. The scope of the inventive technology. Further, the evaluation methods used in the examples are as follows.
於後述的製造方法製得尺寸50mm×50mm×0.8mm之測試材料後，依據JIS規格C2110-1，於測試材料一側的面使外徑20mm之球形電極以荷重500gf接觸之狀態，使用絕緣破壞試驗裝置，以20~40秒左右以引起絕緣破壞的方式用一定速度對厚度方向施加直流電壓，測定產生絕緣破壞時之電壓。進行5次上述電壓測定，並將其平均值作為耐電壓。 After the test material having a size of 50 mm × 50 mm × 0.8 mm was produced by the manufacturing method described later, the spherical electrode having an outer diameter of 20 mm was brought into contact with a load of 500 gf on the side of the test material in accordance with JIS standard C2110-1, and dielectric breakdown was used. In the test apparatus, a DC voltage was applied to the thickness direction at a constant speed for about 20 to 40 seconds to cause dielectric breakdown, and the voltage at which insulation breakdown occurred was measured. The above voltage measurement was performed 5 times, and the average value was taken as the withstand voltage.
針對以後述的製造方法所得之測試材料，使用原子力顯微鏡(Atomic Force Microscope、AFM)(精工電子工業製SPI3800N)，對於層合測試材料之薄膜側的表面，測定10μm×10μm區域之任意3處的表面粗糙度，將其平均值作為平均表面粗糙度Ra。 For the test material obtained by the manufacturing method described later, an Atomic Force Microscope (AFM) (SPI3800N manufactured by Seiko Instruments Inc.) was used to measure any three regions of the 10 μm × 10 μm region on the film side surface of the laminated test material. The surface roughness was averaged as the average surface roughness Ra.
將電鍍鋅鋼板(板厚0.8mm)作為金屬板，於金屬板 的表面，混合有將烯烴樹脂作為主成分之熱可塑性接著劑(東亞合成公司製Aronmelt(註冊商標)PPET(註冊商標)1505SG28)70質量%與甲基乙基酮30質量%之分散液，使用安田精機製作所公司製棒塗佈機紗數60進行塗佈，再以到達板溫(Peak Metal Temperature：PMT)成為100℃的方式進行燒附、乾燥2分鐘，而得到接著劑的膜厚為5.7μm之接著劑塗裝金屬板1。將接著劑塗裝金屬板1的製作條件、物性等示於表1。 Electrogalvanized steel sheet (plate thickness 0.8mm) is used as a metal plate on a metal plate For the surface, a dispersion of 70% by mass of methyl ketone and 30% by mass of methyl ethyl ketone is used as a thermoplastic adhesive (Aronmelt (registered trademark) PPET (registered trademark) 1505 SG28 manufactured by Toagosei Co., Ltd.). The number of the bar coater yarns of the Yasushi Seiki Co., Ltd. was 60, and the film was baked and dried for 2 minutes so that the plate temperature (Peak Metal Temperature: PMT) became 100 ° C, and the film thickness of the adhesive was 5.7. The adhesive of μm is coated with the metal plate 1. The production conditions, physical properties, and the like of the adhesive-coated metal sheet 1 are shown in Table 1.
將電鍍鋅鋼板(板厚0.8mm)作為金屬板，於金屬板的表面，混合有將聚酯樹脂作為主成分之熱可塑性接著劑(東亞合成公司製Aron melt(註冊商標)PPET(註冊商標)360HVXM30)90質量%與甲基乙基酮10質量%之分散液，使用安田精機製作所公司製棒塗佈機紗數60進行塗佈，再以到達板溫(Peak Metal Temperature：PMT)成為100℃的方式進行燒附、乾燥2分鐘，而得到接著劑的膜厚為12.4μm之接著劑塗裝金屬板2。將接著劑塗裝金屬板2的製作條件、物性等示於表1。 An electrogalvanized steel sheet (plate thickness: 0.8 mm) was used as a metal plate, and a thermoplastic adhesive containing a polyester resin as a main component was mixed on the surface of the metal plate (Aron melt (registered trademark) PPET (registered trademark) manufactured by Toagosei Co., Ltd.) 360HVXM30) Dispersion of 90% by mass and 10% by mass of methyl ethyl ketone, coated with the number of yarns of the bar coater manufactured by Yasuda Seiki Co., Ltd., and then reached the plate temperature (Peak Metal Temperature: PMT) to 100 ° C In the manner of baking and drying for 2 minutes, an adhesive-coated metal plate 2 having a film thickness of the adhesive of 12.4 μm was obtained. The production conditions, physical properties, and the like of the adhesive-coated metal sheet 2 are shown in Table 1.
在接著劑塗裝金屬板2，除了將分散液變更為混合有熱可塑性接著劑(東亞合成公司製Aronmelt(註冊商標)PES(註冊商標)360HVXM30)50質量%與甲基乙基酮 50質量%之分散液的點之外，其他與接著劑塗裝金屬板2同樣進行而得到接著劑的膜厚為7.0μm之接著劑塗裝金屬板3。將接著劑塗裝金屬板3的製作條件、物性等示於表1。 The metal plate 2 was coated with an adhesive, except that the dispersion was changed to a thermoplastic adhesive (Aronmelt (registered trademark) PES (registered trademark) 360HVXM30 manufactured by Toagosei Co., Ltd.), 50% by mass and methyl ethyl ketone. The adhesive-coated metal plate 3 having a film thickness of the adhesive of 7.0 μm was obtained in the same manner as the adhesive-coated metal sheet 2 except for the point of the 50% by mass dispersion liquid. The production conditions, physical properties, and the like of the adhesive-coated metal sheet 3 are shown in Table 1.
在接著劑塗裝金屬板2，除了將分散液變更為混合有熱可塑性接著劑(東亞合成公司製Aronmelt(註冊商標)PES(註冊商標)360HVXM30)70質量%與甲基乙基酮30質量%之分散液，改使用棒塗佈機紗數30的點之外，其他與接著劑塗裝金屬板2同樣進行而得到接著劑的膜厚為4.9μm之接著劑塗裝金屬板4。將接著劑塗裝金屬板4的製作條件、物性等示於表1。 The metal plate 2 was applied to the adhesive, except that the dispersion was changed to a thermoplastic adhesive (Aronmelt (registered trademark) PES (registered trademark) 360HVXM30 manufactured by Toagosei Co., Ltd.) 70% by mass and methyl ethyl ketone 30% by mass. The dispersion liquid was applied in the same manner as the adhesive-coated metal plate 2 except that the number of the bar coater yarns was changed to 30, and the adhesive-coated metal plate 4 having a film thickness of the adhesive of 4.9 μm was obtained. The production conditions, physical properties, and the like of the adhesive-coated metal sheet 4 are shown in Table 1.
在接著劑塗裝金屬板2，除了將分散液變更為混合有熱可塑性接著劑(東亞合成公司製Aronmelt(註冊商標)PES(註冊商標)360HVXM30)70質量%與甲基乙基酮30質量%之分散液，改使用棒塗佈機紗數20的點之外，其他與接著劑塗裝金屬板2同樣進行而得到接著劑的膜厚為3.2μm之接著劑塗裝金屬板5。將接著劑塗裝金屬板5的製作條件、物性等示於表1。 The metal plate 2 was applied to the adhesive, except that the dispersion was changed to a thermoplastic adhesive (Aronmelt (registered trademark) PES (registered trademark) 360HVXM30 manufactured by Toagosei Co., Ltd.) 70% by mass and methyl ethyl ketone 30% by mass. The dispersion-coated metal sheet 5 having a film thickness of the adhesive of 3.2 μm was obtained in the same manner as the adhesive-coated metal sheet 2 except that the number of the bar coater yarns was changed to 20. The production conditions, physical properties, and the like of the adhesive-coated metal sheet 5 are shown in Table 1.
在接著劑塗裝金屬板2，除了將分散液變更為混合有熱可塑性接著劑(東亞合成公司製Aronmelt(註冊商標)PES(註冊商標)360HVXM30)70質量%與甲基乙基酮30質量%之分散液，改使用棒塗佈機紗數10的點之外，其他與接著劑塗裝金屬板2同樣進行而得到接著劑的膜厚為1.6μm之接著劑塗裝金屬板6。將接著劑塗裝金屬板6的製作條件．物性等示於表1。 The metal plate 2 was applied to the adhesive, except that the dispersion was changed to a thermoplastic adhesive (Aronmelt (registered trademark) PES (registered trademark) 360HVXM30 manufactured by Toagosei Co., Ltd.) 70% by mass and methyl ethyl ketone 30% by mass. The dispersion was applied in the same manner as the adhesive-coated metal plate 2 except that the number of the bar coater yarns was changed to 10, and the adhesive-coated metal plate 6 having a film thickness of the adhesive of 1.6 μm was obtained. Preparation conditions for coating the metal plate 6 with an adhesive. Physical properties and the like are shown in Table 1.
承載25μm之PET薄膜1(Unitika公司製Emblet(註冊商標)P652：表面粗糙度Ra 20nm)於接著劑塗裝金屬板1之接著劑塗佈面上，於溫度180℃、壓力10kgf/cm2的條件下，藉由進行1分鐘加壓接著，使接著劑塗裝金屬板1與PET薄膜進行接著而得到金屬基板。將金屬基板的製作條件、所得之金屬基板的物性、評價結 果示於表2。 A 25 μm PET film 1 (Emblet (registered trademark) P652 manufactured by Unitika Co., Ltd.: surface roughness Ra 20 nm) was applied to the adhesive coated surface of the adhesive-coated metal plate 1 at a temperature of 180 ° C and a pressure of 10 kgf/cm 2 . Under the conditions, pressurization was performed for 1 minute, and then the adhesive-coated metal plate 1 and the PET film were bonded to each other to obtain a metal substrate. The production conditions of the metal substrate, the physical properties of the obtained metal substrate, and the evaluation results are shown in Table 2.
在實施例1，除了改使用接著劑塗裝金屬板2取代接著劑塗裝金屬板1之外，其他與實施例1同樣進行而得到金屬基板。將金屬基板的製作條件、所得之金屬基板的物性、評價結果示於表2。 In the first embodiment, a metal substrate was obtained in the same manner as in Example 1 except that the metal plate 2 was coated with an adhesive instead of the adhesive. The production conditions of the metal substrate, the physical properties of the obtained metal substrate, and the evaluation results are shown in Table 2.
承載100μm之PET薄膜1(帝人杜邦薄膜公司製Teonex(註冊商標)Q65FA：表面粗糙度Ra 1.2nm)於接著劑塗裝金屬板1之接著劑塗佈面上，於溫度180℃、壓力50kgf/cm2的條件下，藉由進行1分鐘加壓接著，使接著劑塗裝金屬板1與PET薄膜進行接著而得到金屬基板。將金屬基板的製作條件、所得之金屬基板的物性、評價結果示於表2。 A 100 μm PET film 1 (Teonex (registered trademark) Q65FA manufactured by DuPont Film Co., Ltd.: surface roughness Ra 1.2 nm) was applied to the adhesive coated surface of the adhesive-coated metal plate 1 at a temperature of 180 ° C and a pressure of 50 kgf / Under the condition of cm 2 , pressurization was performed for 1 minute, and then the adhesive-coated metal plate 1 and the PET film were bonded to each other to obtain a metal substrate. The production conditions of the metal substrate, the physical properties of the obtained metal substrate, and the evaluation results are shown in Table 2.
在實施例3，除了改使用接著劑塗裝金屬板2取代接著劑塗裝金屬板1之外，其他與實施例3同樣進行而得到金屬基板。將金屬基板的製作條件、所得之金屬基板的物性、評價結果示於表2。 In the third embodiment, a metal substrate was obtained in the same manner as in the third embodiment except that the metal plate 2 was applied instead of the adhesive. The production conditions of the metal substrate, the physical properties of the obtained metal substrate, and the evaluation results are shown in Table 2.
承載100μm之PET薄膜(Q65FA)於接著劑塗裝金屬板3之接著劑塗佈面上，於溫度100℃、壓力1kgf/cm2的條件下，藉由進行1分鐘加壓接著，使接著劑塗裝金屬板3與PET薄膜進行接著而得到金屬基板。將所得之金屬板的物性、評價結果示於表2。 The PET film (Q65FA) carrying 100 μm was applied to the adhesive coated surface of the adhesive-coated metal plate 3 at a temperature of 100 ° C and a pressure of 1 kgf/cm 2 , followed by pressurization for 1 minute, followed by application of an adhesive. The coated metal plate 3 is then subjected to a PET film to obtain a metal substrate. The physical properties and evaluation results of the obtained metal plate are shown in Table 2.
在實施例5，除了將加壓接著時之溫度變更為120℃、140℃的點之外，其他與實施例5同樣進行而得到金屬基板。將金屬基板的製作條件、所得之金屬基板的物性、評價結果示於表2。 In Example 5, a metal substrate was obtained in the same manner as in Example 5 except that the temperature at the time of pressurization was changed to 120 ° C and 140 ° C. The production conditions of the metal substrate, the physical properties of the obtained metal substrate, and the evaluation results are shown in Table 2.
如表2所記載，在實施例5，除了變更接著劑塗裝金屬板、加壓接著時之溫度的至少一種之外，其他與實施例5同樣進行而得到金屬基板。將金屬基板的製作條件、所得之金屬基板的物性、評價結果示於表2。 As described in Table 2, a metal substrate was obtained in the same manner as in Example 5 except that at least one of the temperature at which the adhesive was applied to the metal plate and the pressure was applied. The production conditions of the metal substrate, the physical properties of the obtained metal substrate, and the evaluation results are shown in Table 2.
在實施例4，除了將加壓接著時之溫度定為100℃、120℃、140℃，加壓接著時之壓力變更為1kgf/cm2的點之外，其他與實施例4同樣進行而得到金屬基板。將金屬基板的製作條件、所得之金屬基板的物性、評價結果示於表2。 In Example 4, the same procedure as in Example 4 was carried out except that the temperature at the time of pressurization was changed to 100 ° C, 120 ° C, and 140 ° C, and the pressure at the time of pressurization was changed to 1 kgf/cm 2 . Metal substrate. The production conditions of the metal substrate, the physical properties of the obtained metal substrate, and the evaluation results are shown in Table 2.
在實施例1，除了改使用50μm之PET薄膜2(Unitika公司製E5101：表面粗糙度Ra 50nm)來取代25μm之PET薄膜1的點之外，其他與實施例1同樣進行而得到金屬基板。將金屬基板的製作條件、所得之金屬基板的物性、評價結果示於表2。 In the first embodiment, a metal substrate was obtained in the same manner as in Example 1 except that a 50 μm PET film 2 (E5101 manufactured by Unitika Co., Ltd.: surface roughness Ra 50 nm) was used instead of the PET film 1 of 25 μm. The production conditions of the metal substrate, the physical properties of the obtained metal substrate, and the evaluation results are shown in Table 2.
在實施例2，除了改使用50μm之PET薄膜2(E5101)來取代25μm之PET薄膜1的點之外，其他與實施例2同樣進行而得到金屬基板。將金屬基板的製作條件、所得之金屬基板的物性、評價結果示於表2。 In the second embodiment, a metal substrate was obtained in the same manner as in Example 2 except that the 50 μm PET film 2 (E5101) was used instead of the 25 μm PET film 1. The production conditions of the metal substrate, the physical properties of the obtained metal substrate, and the evaluation results are shown in Table 2.
藉由層合特定皮膜於金屬板，使皮膜的表面變為平滑，同時成為皮膜為具有絕緣性之金屬基板，可用在次直型薄膜太陽能電池或頂部發光型有機EL元件。 By laminating a specific film on a metal plate to make the surface of the film smooth, and at the same time, the film is an insulating metal substrate, and it can be used for a secondary straight type thin film solar cell or a top emission type organic EL element.
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| JP2014073359A JP6510760B2 (en) | 2014-03-31 | 2014-03-31 | Metal substrate |
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| CN (1) | CN106165112B (en) |
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| EP3721877A1 (en) | 2014-07-02 | 2020-10-14 | InFlectis BioScience | Novel therapeutic uses of benzylideneguanidine derivatives for the treatment of proteopathies |
| JP5946578B1 (en) * | 2015-12-09 | 2016-07-06 | 尾池工業株式会社 | Method for producing surface smooth laminate |
| JP6742268B2 (en) * | 2017-03-31 | 2020-08-19 | 富士フイルム株式会社 | Thermoplastic resin film manufacturing method, conductive film manufacturing method, thermoplastic resin film, and conductive film |
| WO2020137783A1 (en) | 2018-12-28 | 2020-07-02 | Ｊｆｅスチール株式会社 | Film laminate metal sheet, substrate for flexible devices, and substrate for organic el devices |
| CN112877592B (en) * | 2019-11-29 | 2022-06-28 | 宝山钢铁股份有限公司 | Hot-formed part with excellent paint film adhesion and manufacturing method thereof |
| CN117042958A (en) | 2021-03-23 | 2023-11-10 | 杰富意钢铁株式会社 | Film-laminated metal plate, method for producing same, substrate for flexible electronic device, and substrate for organic EL |
| WO2024075738A1 (en) * | 2022-10-03 | 2024-04-11 | 東洋紡株式会社 | Long laminate, photovoltaic device, and method for producing photovoltaic device |
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| JPH1110724A (en) | 1997-06-25 | 1999-01-19 | Toray Ind Inc | Polyester film for laminating metal plate |
| JP2002025763A (en) * | 2000-07-11 | 2002-01-25 | Nisshin Steel Co Ltd | Insulating board for organic el element |
| JP3942017B2 (en) * | 2002-03-25 | 2007-07-11 | 富士フイルム株式会社 | Light emitting element |
| JP2011222779A (en) * | 2010-04-09 | 2011-11-04 | Dainippon Printing Co Ltd | Method of manufacturing substrate for thin film element, method of manufacturing thin film element, method for thin film transistor |
| JP2011108883A (en) * | 2009-11-18 | 2011-06-02 | Mitsubishi Chemicals Corp | Solar cell |
| CN102812563B (en) * | 2010-02-10 | 2015-12-09 | 塔塔钢铁荷兰科技有限责任公司 | Stack system preparing solar cell and preparation method thereof on the metallic substrate |
| CN101805578B (en) * | 2010-03-19 | 2012-07-25 | 苏州赛伍应用技术有限公司 | Back protection film of solar cell |
| WO2012048888A1 (en) * | 2010-10-14 | 2012-04-19 | Tata Steel Nederland Technology B.V. | Preparation of a polyetherimide intermediate and its application on metal substrates |
| JP2012146413A (en) | 2011-01-07 | 2012-08-02 | Teijin Dupont Films Japan Ltd | Polyester film for organic electroluminescent illumination substrate |
| JP5853567B2 (en) * | 2011-10-11 | 2016-02-09 | 日新製鋼株式会社 | ORGANIC EL ELEMENT SUBSTRATE, ITS MANUFACTURING METHOD, AND ORGANIC EL ELEMENT |
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| CN103522658B (en) * | 2013-09-18 | 2017-02-15 | 东莞市安派电子有限公司 | Backboard for metal perforation type solar battery and preparation method of backboard |
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