JP2002025763A - Insulating board for organic el element - Google Patents
Insulating board for organic el elementInfo
- Publication number
- JP2002025763A JP2002025763A JP2000209796A JP2000209796A JP2002025763A JP 2002025763 A JP2002025763 A JP 2002025763A JP 2000209796 A JP2000209796 A JP 2000209796A JP 2000209796 A JP2000209796 A JP 2000209796A JP 2002025763 A JP2002025763 A JP 2002025763A
- Authority
- JP
- Japan
- Prior art keywords
- organic
- substrate
- insulating layer
- thickness
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 16
- 229920005989 resin Polymers 0.000 claims abstract description 12
- 239000011347 resin Substances 0.000 claims abstract description 12
- 230000003746 surface roughness Effects 0.000 claims abstract description 12
- 239000011888 foil Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 43
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 9
- 239000001301 oxygen Substances 0.000 abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 abstract description 9
- 150000002894 organic compounds Chemical class 0.000 abstract description 4
- 238000005215 recombination Methods 0.000 abstract description 2
- 230000006798 recombination Effects 0.000 abstract description 2
- 238000002513 implantation Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 48
- 239000010408 film Substances 0.000 description 18
- 239000011521 glass Substances 0.000 description 10
- 239000012044 organic layer Substances 0.000 description 10
- 239000003973 paint Substances 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000000049 pigment Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 239000004695 Polyether sulfone Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910019015 Mg-Ag Inorganic materials 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 101150065537 SUS4 gene Proteins 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000005441 aurora Substances 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- 238000005097 cold rolling Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、電子と正孔の注入
・再結合により発光する有機化合物材料のエレクトロル
ミネッサンス(以下、有機ELと略称する)を利用した
表示素子において、可撓性、耐水性、耐酸素性および発
光安定性に優れた有機EL素子絶縁基板に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a display element using electroluminescence (hereinafter abbreviated as organic EL) of an organic compound material which emits light by injection and recombination of electrons and holes. The present invention relates to an organic EL element insulating substrate having excellent water resistance, oxygen resistance and luminescence stability.
【0002】[0002]
【従来の技術】有機EL素子は、蛍光性有機化合物を含
む薄膜をアノード電極とカソード電極との間に挟んだ積
層構造を有し、前記薄膜に電子および正孔を注入して再
結合させることにより励起子(エキシトン)を生成さ
せ、この励起子が失活する際の光の放出(蛍光・燐光)
を利用して表示を行う表示素子である。有機EL素子は
通常、図2に示すように、基板の上にアノード電極
(5)が形成され、その上に有機層{ホール輸送層、発
光層、電子輸送層(4)}、カソード電極(3)の順に
形成され、各層を覆うように前記基板に封止部材が形成
されてなる。この場合、光の取り出しは基板側となる。
基板には、絶縁性および透明性が必要となるためガラス
が用いられ、実用化される用途が携帯電話や車載用ディ
スプレー等であることから、軽量化および薄型化を目的
に厚さ数mm程度のガラス板(6)が用いられている。2. Description of the Related Art An organic EL device has a laminated structure in which a thin film containing a fluorescent organic compound is sandwiched between an anode electrode and a cathode electrode, and electrons and holes are injected into the thin film and recombined. To generate excitons, and emission of light when these excitons are deactivated (fluorescence / phosphorescence)
Is a display element that performs display by utilizing the above. As shown in FIG. 2, the organic EL device usually has an anode electrode (5) formed on a substrate, and an organic layer {a hole transport layer, a light emitting layer, an electron transport layer (4)} and a cathode electrode ( The sealing member is formed on the substrate so as to cover each layer. In this case, light is extracted on the substrate side.
Glass is used for the substrate because it requires insulation and transparency, and since its practical use is for mobile phones and in-vehicle displays, the thickness is about several mm for the purpose of weight reduction and thinning. Glass plate (6) is used.
【0003】アノード電極にも透明性が必要であり、I
TO(Indium Tin Oxide)等の透明導
電膜が膜厚100nm前後で形成される。発光部となる
有機層は、例えば数10nmの膜厚で成膜されたホール
注入層としての銅フタロシアニン(CuPc)有機膜
(4a)と、CuPc有機膜上に数10nmの膜厚で成
膜されたホール輸送層としてのBis〔N-(1-nap
htyl-N-phneyl)benzidine〕α-
NPD有機膜(4b)と、α-NPD有機膜の上に数1
0nmの膜厚で成膜された発光層兼電子輸送層としての
トリス(8-キノリノラト)アルミニウム(Alq3)
有機膜(4c)との3層構造からなる。カソード電極は
例えば、数10〜数100nmの膜厚で成膜されたAl
-Liからなる。図示してないが、有機EL素子の発光
部は、水分、酸素の存在下で劣化が著しいことから、水
を極力取り除いた不活性ガス(例えばドライ窒素)雰囲
気で、前記各層を覆うようにガラス基板に封止部材が接
着剤により固着されている。封止部材には板厚0.1〜
1mmのステンレス箔等が用いられる。[0003] The anode electrode also needs to be transparent.
A transparent conductive film such as TO (Indium Tin Oxide) is formed with a thickness of about 100 nm. The organic layer serving as the light emitting portion is formed, for example, of a copper phthalocyanine (CuPc) organic film (4a) as a hole injection layer formed with a thickness of several tens of nm, and a film of several tens of nm on the CuPc organic film. Bis [N- (1-nap) as a hole transport layer
htyl-N-phneyl) benzidine] α-
On the NPD organic film (4b) and the α-NPD organic film,
Tris (8-quinolinolato) aluminum (Alq3) as a light emitting layer and an electron transporting layer formed with a thickness of 0 nm
It has a three-layer structure with the organic film (4c). The cathode electrode is, for example, an Al film having a thickness of several tens to several hundreds of nm.
-Consists of Li. Although not shown, since the light emitting portion of the organic EL element is significantly deteriorated in the presence of moisture and oxygen, the glass is formed so as to cover the above layers in an inert gas (eg, dry nitrogen) atmosphere from which water is removed as much as possible. A sealing member is fixed to the substrate with an adhesive. Thickness 0.1 ~ for sealing member
1 mm stainless steel foil or the like is used.
【0004】ところで、有機EL素子は液晶ディスプレ
ーのようなバックライトを必要としない自発光素子であ
り、薄型化できるという大きなメリットを持っている。
発光部自体は有機系材料であるため可撓性を有する素材
である。そのため使用環境の拡大が期待され、例えば電
柱のような曲面部に巻き付けて使用したり、様々な形状
の成形部材の形を活かした使用が考えられており、フレ
キシビリティーを有することで、省スペースへの使用、
デザイン性の向上が期待されている。将来的に大型化が
可能になれば、野球場のオーロラビジョン等のようにデ
ィスプレーを曲面状にして様々な角度から画面が見られ
るようにする要望もある。しかし、現状に用いられる基
板は可撓性に劣るガラスであり、上記した要求を満足す
ることはできない。また、ガラス基板は割れ易く、ハン
ドリング性が問題となり、安全面やフレキシビリティー
の面からもガラスに代る基板が求められている。The organic EL element is a self-luminous element which does not require a backlight such as a liquid crystal display, and has a great advantage that it can be made thin.
The light emitting portion itself is an organic material and therefore has flexibility. For this reason, the use environment is expected to expand.For example, it is considered to be used by winding around a curved surface such as a telephone pole, or to use various shapes of molded members. Use for space,
Improvement in design is expected. If it becomes possible to increase the size in the future, there is also a demand for making the display curved so that the screen can be viewed from various angles, such as the aurora vision of a baseball field. However, the substrate currently used is glass having poor flexibility, and cannot satisfy the above-mentioned requirements. Further, the glass substrate is easily broken, and handling becomes a problem. Therefore, a substrate replacing glass is required also from the viewpoint of safety and flexibility.
【0005】フレキシビリティーを有する基材として
は、有機系材料のフィルムが考えられ、太陽電池等の様
々な電子素子用の基板として実用化されている。しか
し、有機樹脂フィルムは耐水性および耐酸素性がガラス
に比べて劣るため、素子に直接接する基板に用いた場
合、フィルムを透過した水分や酸素により、有機EL素
子の劣化が進み、長期安定性に問題がある。また、有機
樹脂フィルムは一定形状を保持するための剛性に劣るの
で発光部形成時に基板のバタツキにより歩留りが低下
し、集積回路形成時のハンダ付けの際に耐熱性が劣る問
題もある。一方、金属板及び金属箔は、フレキシビリテ
ィーを有し、耐水性、耐酸素性、剛性およびハンダ耐熱
性が優れており、有機EL素子用基板として期待でき
る。なお、厚さ数10μmの箔はガラスに比べて軽量化
できるメリットもある。ただし、素子との接触面は集積
化のため、絶縁処理されていなければならない。As a substrate having flexibility, a film made of an organic material is considered, and has been put to practical use as a substrate for various electronic devices such as solar cells. However, since the organic resin film is inferior to glass in water resistance and oxygen resistance, when used as a substrate in direct contact with the element, moisture and oxygen permeating the film cause deterioration of the organic EL element, resulting in long-term stability. There's a problem. Further, since the organic resin film has poor rigidity for maintaining a certain shape, the yield is reduced due to the fluttering of the substrate when the light emitting portion is formed, and there is also a problem that the heat resistance is poor when soldering when forming the integrated circuit. On the other hand, metal plates and metal foils have flexibility, and are excellent in water resistance, oxygen resistance, rigidity and solder heat resistance, and can be expected as substrates for organic EL devices. Note that a foil having a thickness of several tens of μm also has the advantage of being lighter than glass. However, the contact surface with the element must be insulated for integration.
【0006】絶縁処理を施す上で、表面に1μm程度の
凹凸があり凸部に鋭角のものがあると、発光部に膜切れ
を起こし短絡の原因となり、通常の金属表面程度の凹凸
が存在すると、有機EL素子用基板として使用できな
い。凹凸をなくし平滑化する方法としてポリッシング等
の機械によるものが考えられ、例えば現状有機EL素子
用基板として用いられているガラス基板では、表面のポ
リッシング処理を施している。それでもポリッシング時
に残るスジ状疵程度の凹凸でも短絡原因になり、ガラス
基板の表面に有機系塗膜を形成して平滑化する方法が紹
介されている(特開2000−21563号公報)。In performing the insulation treatment, if the surface has irregularities of about 1 μm and the convex parts have an acute angle, the light emitting portion may be cut off and cause a short circuit. Cannot be used as a substrate for an organic EL device. A method such as polishing can be considered as a method for removing unevenness and smoothing. For example, a glass substrate currently used as a substrate for an organic EL element is subjected to a polishing treatment on its surface. Nevertheless, a method of forming an organic coating film on the surface of a glass substrate and smoothing the surface is introduced (Japanese Patent Application Laid-Open No. 2000-21563).
【0007】[0007]
【発明が解決しようとする課題】本発明は、上記に鑑み
てなされたものであり、フレキシビリティーを有し、耐
水性および耐酸素性に優れた基材を用いて、発光安定性
に優れた有機EL素子用絶縁基板を提供することを目的
とする。DISCLOSURE OF THE INVENTION The present invention has been made in view of the above circumstances, and uses a substrate having flexibility, excellent water resistance and excellent oxygen resistance, and excellent luminescence stability. An object of the present invention is to provide an insulating substrate for an organic EL device.
【0008】[0008]
【課題を解決するための手段】発明者等は、上記目的を
達成するために種々検討した結果、金属板または金属箔
を基材とし、有機系樹脂からなる膜厚1〜40μm、表
面粗さがRa≦0.5μm、Rmax≦1.5μmの絶
縁層を基材表面に形成すればよいことを見出し、本発明
を完成するに至った。The present inventors have conducted various studies to achieve the above object. As a result, the inventors have found that a metal plate or a metal foil as a base material, a film thickness of 1 to 40 μm made of an organic resin, and a surface roughness of Found that an insulating layer having Ra ≦ 0.5 μm and Rmax ≦ 1.5 μm should be formed on the surface of the base material, and the present invention was completed.
【0009】[0009]
【発明の実施の形態】以下、本発明の実施の形態を説明
する。図1に示す本発明の有機EL素子用基板の基材に
はステンレス鋼、普通鋼、各種めっき鋼、銅、アルミニ
ウム等の金属板又は金属箔(1)を用いる。基材の上に
は絶縁層(2)を形成する。絶縁層は上層との接触面側
を平滑にする必要があり、有機系樹脂を主成分とする塗
料を用いて形成する。有機系樹脂にはポリエステル系、
アクリル系、フッ素系、エポキシ系、ウレタン系、シリ
コーン系等があり、なかでもポリイミド系やポリエーテ
ルスルホン系の耐熱性樹脂であれば各層の成膜時におけ
る加熱に影響されず、安定した平滑面が得られる。Embodiments of the present invention will be described below. As a base material of the substrate for an organic EL device of the present invention shown in FIG. 1, a metal plate or metal foil (1) of stainless steel, ordinary steel, various types of plated steel, copper, aluminum, etc. is used. An insulating layer (2) is formed on the substrate. The insulating layer needs to have a smooth contact surface with the upper layer, and is formed using a paint containing an organic resin as a main component. Polyester-based organic resin,
There are acrylic, fluorine, epoxy, urethane, silicone, etc., especially polyimide or polyethersulfone heat-resistant resin, which is not affected by heating during the formation of each layer and has a stable smooth surface. Is obtained.
【0010】絶縁層(2)は、膜厚が1〜40μmとな
るように前記塗料をロールコート、スプレー、スピンコ
ート、ディッピング等により基材表面に塗布し、乾燥・
焼成することで形成される。十分な電気絶縁性を確保す
るためには、1μm以上の膜厚が必要であり、1μm未
満ではピンホール等の欠陥が発生し易い。しかし、絶縁
層の膜厚が40μmを超えると塗料の消費量が多くなる
ばかりでなく、基材に対する密着性も低下する。絶縁層
の表面粗さはRa≦0.5μm、Rmax≦1.5μm
の範囲に調整する。有機樹脂で形成された絶縁層表面の
凸部は、金属表面を機械的研磨によって平滑化した場合
に残存する凸部形状と比べて比較的滑らかな形状(裾野
の広い凸形状)を有するので、発光部を形成する有機層
の厚み(数10nm程度)に比べ絶縁層表面の凹凸差が
1.5μmと大きくても、発光部に膜切れを生じること
もなく、短絡は発生し難い。それでも絶縁層表面の凹凸
差が1.5μmを超えると、発光部を形成する有機層の
伸びがその高低差に耐えられずに膜切れを生じ、短絡発
生の原因になるものと推定される。The above-mentioned paint is applied to the surface of the base material by roll coating, spraying, spin coating, dipping or the like so that the insulating layer (2) has a film thickness of 1 to 40 μm.
It is formed by firing. In order to ensure sufficient electrical insulation, a film thickness of 1 μm or more is required, and if it is less than 1 μm, defects such as pinholes are likely to occur. However, when the thickness of the insulating layer exceeds 40 μm, not only does the consumption of the paint increase, but also the adhesion to the substrate decreases. The surface roughness of the insulating layer is Ra ≦ 0.5 μm, Rmax ≦ 1.5 μm
Adjust to the range. Since the convex portion on the surface of the insulating layer formed of an organic resin has a relatively smooth shape (a convex shape with a wide skirt) as compared with the remaining convex shape when the metal surface is smoothed by mechanical polishing, Even if the unevenness difference on the surface of the insulating layer is as large as 1.5 μm as compared with the thickness of the organic layer forming the light emitting portion (about several tens of nm), the light emitting portion does not break and the short circuit hardly occurs. Even so, when the unevenness difference on the surface of the insulating layer exceeds 1.5 μm, it is presumed that the elongation of the organic layer forming the light emitting portion does not withstand the difference in elevation and the film breaks, resulting in a short circuit.
【0011】絶縁層(2)の上には金属薄膜によるカソ
ード電極(3)を形成する。カソード電極は例えばA
l、Li、Ag、In等の仕事関数の小さい金属材料単
体やMg−Ag、Al−Li等の仕事関数の小さい合金
からなる。カソード電極は例えば真空蒸着、スパッタリ
ング等により数100nmの膜厚で形成される。カソー
ド電極(3)の上には、有機化合物材料の薄膜による発
光部を有する有機層(4)を形成する。有機層(4)
は、例えば真空蒸着法、スパッタ法等のPVD(Physic
al VaporDeposition)法により、20〜50nm前後
の膜厚で積層される。図2における有機層は、例えばカ
ソード電極上に形成された発光層兼電子輸送層としての
Alq3(4c)、ホール輸送層としてのα−NPD
(4b)、ホール注入層としてのCuPc(4a)が何
れも数10nmの膜厚で順次積層されている。On the insulating layer (2), a cathode electrode (3) made of a metal thin film is formed. The cathode electrode is, for example, A
It is composed of a single metal material having a small work function such as l, Li, Ag, and In, or an alloy having a small work function such as Mg-Ag and Al-Li. The cathode electrode is formed with a thickness of several 100 nm by, for example, vacuum deposition, sputtering, or the like. On the cathode electrode (3), an organic layer (4) having a light emitting portion made of a thin film of an organic compound material is formed. Organic layer (4)
Is, for example, PVD (Physic
al Vapor Deposition) to form a layer having a thickness of about 20 to 50 nm. The organic layer in FIG. 2 includes, for example, Alq3 (4c) as a light emitting layer and an electron transport layer formed on a cathode electrode, and α-NPD as a hole transport layer.
(4b) CuPc (4a) as a hole injection layer is sequentially laminated with a thickness of several tens nm.
【0012】有機層(4)の上には透明性を有する導電
材料として、アノード電極(5)を形成する。アノード
電極(5)は、ITO等の仕事関数の大きい材料からな
り、例えば真空蒸着、スパッタリング等により100n
m前後の膜厚で形成される。図示していないが、有機E
L素子の発光部は水分、酸素の存在下で劣化が著しいこ
とから、水を極力取り除いた不活性ガス(例えばドライ
窒素)雰囲気で前記各層を覆うように絶縁基板に封止部
材が接着剤により固着されている。本発明に従った絶縁
基板を用いた有機EL素子では、封止部材側から光を取
り出すために透明性材料を用いる。例えば厚さ0.1〜
1mmの透明性アクリル板等が用いられる。上記の形態
によれば表面仕上げに起因する金属板又は金属箔表面の
凹凸を有機系樹脂で完全に埋め尽くし、有機樹脂自体も
レベリング性が比較的高いことから、平滑な塗膜表面を
有する絶縁基板が得られる。その結果、絶縁基板上に電
極層及び発光部を積層しても、発光部となる有機層の膜
切れは発生せず、アノード電極とカソード電極の接触に
よる短絡を防止できる。An anode electrode (5) is formed on the organic layer (4) as a transparent conductive material. The anode electrode (5) is made of a material having a large work function, such as ITO, and has a thickness of 100 nm, for example, by vacuum evaporation, sputtering, or the like.
m. Not shown, but organic E
Since the light emitting portion of the L element is significantly deteriorated in the presence of moisture and oxygen, a sealing member is attached to the insulating substrate with an adhesive so as to cover the layers in an inert gas (eg, dry nitrogen) atmosphere from which water has been removed as much as possible. It is fixed. In the organic EL device using the insulating substrate according to the present invention, a transparent material is used to extract light from the sealing member side. For example, thickness 0.1 ~
A 1 mm transparent acrylic plate or the like is used. According to the above aspect, the unevenness of the surface of the metal plate or the metal foil caused by the surface finish is completely filled with the organic resin, and the organic resin itself has relatively high leveling properties. A substrate is obtained. As a result, even when the electrode layer and the light emitting section are stacked on the insulating substrate, the organic layer serving as the light emitting section does not break, and short circuit due to contact between the anode electrode and the cathode electrode can be prevented.
【0013】[0013]
【実施例】実施例1;板厚0.15mm、Ra=0.6
μm、Rmax=1.8μmの表面粗さをもつSUS4
30ステンレス鋼板を脱脂し基材とした。絶縁層用の塗
料として顔料成分を全く含まないポリエーテルスルホン
樹脂をN−メチル−2−ピロリドンに溶解した透明塗料
を用いた。この塗料を基材に塗布し、乾燥・焼成するこ
とで絶縁層を形成した。得られた絶縁層の膜厚は6μm
であり、表面粗さはRa=0.1μm、Rmax=0.
7μmであった。EXAMPLE Example 1; plate thickness 0.15 mm, Ra = 0.6
SUS4 with a surface roughness of μm, Rmax = 1.8 μm
A 30 stainless steel plate was degreased and used as a substrate. As a coating for the insulating layer, a transparent coating in which a polyether sulfone resin containing no pigment component was dissolved in N-methyl-2-pyrrolidone was used. This paint was applied to a substrate, dried and fired to form an insulating layer. The thickness of the obtained insulating layer is 6 μm.
And the surface roughness is Ra = 0.1 μm, Rmax = 0.
It was 7 μm.
【0014】実施例2;板厚が0.3mmの溶融Alめ
っき鋼板を表面粗さがRa=1.2μm、Rmax=
2.0μmになるように冷間圧延し脱脂処理後、塗布型
クロメート処理を施し基材とした。絶縁層用の塗料とし
て、顔料成分を全く含まないポリエステル樹脂をキシレ
ンに溶解した透明塗料を用いた。この塗料を基材に塗布
し、乾燥・焼成することで絶縁層を形成した。得られた
絶縁層の膜厚は20μmであり、表面粗さはRa=0.
3μm、Rmax=1.0μmであった。 実施例3;透明塗料に固形分比率で20質量%のチタニ
ア粉末を分散させた塗料を用いる以外は、実施例1と同
様に絶縁基板を作製した。得られた絶縁層の膜厚は8μ
mであり、表面粗さはRa=0.4μm、Rmax=
1.4μmであった。Example 2 A hot-dip Al-plated steel sheet having a thickness of 0.3 mm was prepared with a surface roughness of Ra = 1.2 μm and Rmax =
After cold rolling to 2.0 μm and degreasing, a coating type chromate treatment was performed to obtain a substrate. As a paint for the insulating layer, a transparent paint in which a polyester resin containing no pigment component was dissolved in xylene was used. This paint was applied to a substrate, dried and fired to form an insulating layer. The thickness of the obtained insulating layer was 20 μm, and the surface roughness was Ra = 0.
3 μm and Rmax = 1.0 μm. Example 3 An insulating substrate was produced in the same manner as in Example 1, except that a paint obtained by dispersing a titania powder having a solid content of 20% by mass in a transparent paint was used. The thickness of the obtained insulating layer is 8 μm.
m, surface roughness Ra = 0.4 μm, Rmax =
It was 1.4 μm.
【0015】比較例1;透明塗料に固形分比率で50質
量%のチタニア粉末を分散させた塗料を用いる以外は、
実施例1と同様に絶縁基板を作製した。得られた絶縁層
の膜厚は8μmであり、表面粗さはRa=0.6μm、
Rmax=1.8μmであった。 比較例2;透明塗料の塗布量を減らす以外は、実施例1
と同様に絶縁基板を作製した。得られた絶縁層の膜厚は
0.3μmであり、表面粗さはRa=0.5μm、Rm
ax=1.7μmであった。Comparative Example 1 A coating material in which 50% by mass of a titania powder in a solid content ratio was dispersed in a transparent coating material was used.
An insulating substrate was manufactured in the same manner as in Example 1. The thickness of the obtained insulating layer was 8 μm, the surface roughness was Ra = 0.6 μm,
Rmax = 1.8 μm. Comparative Example 2 Example 1 except that the amount of the transparent paint applied was reduced.
An insulating substrate was produced in the same manner as in the above. The thickness of the obtained insulating layer was 0.3 μm, and the surface roughness was Ra = 0.5 μm, Rm
ax = 1.7 μm.
【0016】実施例1〜3及び比較例1、2で作製した
絶縁基板を用いて図1に示す上記方法によって有機EL
素子を、各絶縁基板毎に100個作製し、得られた有機
EL素子について、絶縁層の絶縁性、有機EL素子の発
光歩留り(発光部の膜切れによるアノード電極/カソー
ド電極間の短絡発生度合い)を評価した。評価は次に 示すとおり行った。(1)絶縁層の絶縁性 絶縁層の欠陥等が存在した場合、絶縁基板上にマトリッ
クスに配列され、電気的に独立な各有機EL素子(発光
ドット単位)が基材の金属板(又は金属箔)を介して電
気的に接続し単独発光できない。そこで、有機EL素子
の絶縁層側電極(本実施例ではカソード電極)と金属板
間に10Vの電圧をかけ、導通の有無により絶縁層の絶
縁性を評価した。100個の素子全てに導通がないもの
を○印、1個でも導通した素子が存在するものを×印と
した。 (2)有機EL素子の発光歩留り アノード電極/カソード電極間に10Vの電圧をかけ、
有機EL素子の発光の有無で評価した。100個の素子
全て発光したものを○印、発光しない素子が5個未満の
ものを△印、発光しない素子が5個以上のものを×印と
した。Using the insulating substrates prepared in Examples 1 to 3 and Comparative Examples 1 and 2, the organic EL was prepared by the method shown in FIG.
100 elements were prepared for each insulating substrate, and for the obtained organic EL element, the insulating property of the insulating layer, the light emission yield of the organic EL element (the degree of short-circuiting between the anode electrode and the cathode electrode due to the breakage of the light emitting portion). ) Was evaluated. The evaluation was performed as shown below. (1) Insulation of Insulating Layer If there is a defect or the like in the insulating layer, the organic EL elements (light emitting dot units) that are arranged in a matrix on the insulating substrate and are electrically independent are formed on a metal plate (or metal) (E.g., foil) and cannot emit light alone. Therefore, a voltage of 10 V was applied between the electrode on the insulating layer side (cathode electrode in this embodiment) of the organic EL element and the metal plate, and the insulating property of the insulating layer was evaluated based on the presence or absence of conduction. The symbol “○” indicates that all 100 elements had no electrical connection, and the symbol “X” indicates that at least one element was electrically conductive. (2) Light emission yield of organic EL element A voltage of 10 V is applied between the anode electrode and the cathode electrode,
Evaluation was made based on the presence or absence of light emission of the organic EL element. All 100 elements that emitted light were marked with a circle, those that did not emit light with less than 5 were marked with Δ, and those that did not emit light with 5 or more were marked with x.
【0017】評価結果を表1に示す。塗膜中の顔料濃度
が高く表面粗度の粗い比較例1の絶縁基板では、形成し
た有機EL素子の幾つかが未発光であった。また、絶縁
層の膜厚が薄い比較例2の絶縁基板では、絶縁層に短絡
部分が認められた。これに対し、実施例1〜3の絶縁基
板では、絶縁層に短絡は認められず、形成した有機EL
素子の発光歩留りも高いことが確認できた。Table 1 shows the evaluation results. In the insulating substrate of Comparative Example 1 in which the pigment concentration in the coating film was high and the surface roughness was rough, some of the formed organic EL elements did not emit light. In the insulating substrate of Comparative Example 2 in which the thickness of the insulating layer was small, a short-circuit portion was observed in the insulating layer. In contrast, in the insulating substrates of Examples 1 to 3, no short circuit was observed in the insulating layer, and the formed organic EL
It was confirmed that the light emission yield of the device was high.
【0018】[0018]
【表1】 [Table 1]
【0019】[0019]
【発明の効果】以上説明したとおり、本発明の有機EL
素子用絶縁基板は、金属板又は金属箔を基材とし、ミク
ロ的に平滑な表面を有する有機系の絶縁層が形成されて
いるので、この上に有機EL素子を形成した場合、可撓
性、耐水性、耐酸素性に優れ、発光部の膜切れによるア
ノード電極/カソード電極間の短絡のない発光安定性に
優れた有機EL素子を形成することができ、十分使用で
きるので工業的価値は大きい。As described above, the organic EL of the present invention is used.
The element insulating substrate is made of a metal plate or metal foil as a base material, and has an organic insulating layer having a microscopically smooth surface. An organic EL device which is excellent in water resistance and oxygen resistance, has excellent light emission stability without short circuit between the anode electrode and the cathode electrode due to breakage of the light emitting portion, and can be used sufficiently, has great industrial value. .
【図1】本発明の有機EL素子用絶縁基板を用いた有機
EL素子の断面の一例を示す。FIG. 1 shows an example of a cross section of an organic EL element using an insulating substrate for an organic EL element of the present invention.
【図2】従来の有機EL素子の断面の一例を示す。FIG. 2 shows an example of a cross section of a conventional organic EL element.
1:基材(金属板又は金属箔) 2:絶縁層(有機系樹脂) 3:カソード電極 4:発光部(有機層) 5:アノード電極 1: base material (metal plate or metal foil) 2: insulating layer (organic resin) 3: cathode electrode 4: light emitting section (organic layer) 5: anode electrode
───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 3K007 AB11 AB18 BA06 BA07 CA06 CB01 DA01 DB03 EB00 FA01 4D075 CA23 DA04 DA06 DB01 EA05 EB39 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 3K007 AB11 AB18 BA06 BA07 CA06 CB01 DA01 DB03 EB00 FA01 4D075 CA23 DA04 DA06 DB01 EA05 EB39
Claims (1)
樹脂からなる膜厚1〜40μm、表面粗さがRa≦0.
5μm、Rmax≦1.5μmの絶縁層を基材表面に形
成したことを特徴とする有機EL素子用絶縁基板。1. A metal plate or metal foil as a base material, a film thickness of 1 to 40 μm made of an organic resin, and a surface roughness Ra ≦ 0.
An insulating substrate for an organic EL device, wherein an insulating layer having a thickness of 5 μm and Rmax ≦ 1.5 μm is formed on a surface of a base material.
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JP2000209796A JP2002025763A (en) | 2000-07-11 | 2000-07-11 | Insulating board for organic el element |
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ID=18706151
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WO2013129564A1 (en) | 2012-02-28 | 2013-09-06 | 日東電工株式会社 | Method for manufacturing organic el device and organic el device |
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US7026759B2 (en) | 2002-03-25 | 2006-04-11 | Fuji Photo Film Co., Ltd. | Light-emitting device having specific linear thermal expansion coefficient and gas barrier properties |
WO2013069400A1 (en) | 2011-11-10 | 2013-05-16 | 日東電工株式会社 | Organic electro-luminescence device and method for manufacturing organic electro-luminesence device |
WO2013129564A1 (en) | 2012-02-28 | 2013-09-06 | 日東電工株式会社 | Method for manufacturing organic el device and organic el device |
US9331307B2 (en) | 2012-02-28 | 2016-05-03 | Nitto Denko Corporation | Method for manufacturing organic EL device and organic EL device |
WO2015151773A1 (en) * | 2014-03-31 | 2015-10-08 | 株式会社神戸製鋼所 | Metal substrate |
JP2015195315A (en) * | 2014-03-31 | 2015-11-05 | 株式会社神戸製鋼所 | metal substrate |
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